Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy

1-x Mn_xS (where 0.05<x<1) were measured as the energy of the exciting radiation was tuned across the S and Mn-L_2,3 absorption edges of these compounds. Strong resonance peaks in Mn-L emission spectra and the systematic appearance of new spectral features in S-L emission spectra were observed. Partial substitution of Zn by a magnetic Mn ion results in strong hybridization of the Mn 3d orbitals with the sp band of the host semiconductor. A detailed study of resonant inelastic scattering in the vicinity of the S and Mn-L_2,3 absorption edges of these DMS is presented. Received: 6 March 1997     

Magnetic circular dichroism in soft X-ray resonant inelastic scattering

We discuss the application of resonant inelastic X-ray scattering to the study of magnetic systems in the soft X-ray range. To this end we distinguish two broad areas. In the first the layout of the experiment is such that the absorption magnetic circular dichroism (MCD) is not zero. In the second the magnetisation is perpendicular to the incident helical beam so that the absorption MCD is zero. In the first area we summarise published results on Fe-Co alloys and we present new data on Mn impurities in Ni together with calculations. In the second area we summarise published results on Ni in Ni-ferrite with final 3s shell excitation and we present new results on Co-metal and Co in Co-ferrite measured with a new approach. This is based on the incident energy dependence of the integral of the Raman spectrum in inner shell excitation (integrated resonant Raman scattering). The potentialities and the limitations of the above methods are critically presented. Received: 23 May 2001 / Accepted: 4 July 2001 / Published online: 5 October 2001     

Resonant soft X-ray fluorescence spectra of molecules

Accepted: 6 March 1997     

Electronic structure of single-wall carbon nanotubes studied by resonant inelastic X-ray scattering

F in the nanotubes, indicating that metallic nanotubes are present in the sample. Received: 2 April 1998     

Polarization dependence of resonant inelastic X-ray scattering spectroscopy in correlated electron systems

Resonant inelastic X-ray scattering (RIXS) at the transition-metal K-edge is studied as a tool to detect the electronic structure in correlated electron systems. We, in particular, focus on the polarization dependence of RIXS intensity and symmetry of the electronic excitations. It is shown that by analyzing the polarization of the initial and scattered X-rays, the symmetry of the 4p orbitals are selected. Combined effects of the polarization of X-rays and the momentum transfer in the scattering are also studied.     

Resonant fluorescence emission from the Ge and Cu valence band

Received: 16 March 1996     

Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

Near-surface vacancy-type defects have been studied by positron beam spectroscopy in three boron-doped Si wafers; a control sample, second sample exposed to atomic hydrogen in electron cyclotron resonance (ECR) plasma, and a third sample annealed at 500 °C following plasma treatment. From the analysis of the Doppler broadening spectra, measured as a function of positron implantation depth, we obtain positron diffusion lengths of about 100 and 250 nm for the damaged layer and bulk of the wafer, respectively. For the plasma-treated wafer, our measurements provide a defect density of about 5×10¹⁷ cm^-3. Received: 4 September 1998 / Accepted: 5 January 1999 / Published online: 28 April 1999     

Local probing of the surface chemical bond using X-ray emission spectroscopy

2 and CO on Ni(100), benzene on Ni(100) and Cu(110), and glycine adsorbed on Cu(110). New types of molecular states are observed which are directly related to the surface chemical bond. The long-accepted Blyholder model which is based on a frontier orbital concept cannot explain our results for N₂ and CO chemisorption. We find it necessary to offer a new picture where changes in the whole molecular orbital framework have to be considered. We show that both π and σ type interactions are important in describing the bonding in benzene to metal surfaces. The future prospect is illustrated by the adsorption of the simplest amino acid, glycine, on Cu(110). The adsorbate has four different atomic centers where X-ray emission spectra are obtained, providing a unique view of the local electronic structure. Accepted: 6 March 1997     

Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO2

We have used ion-beam mixing to form Si nano-crystals in SiO₂ and SiO₂/Si multilayers, and applied photoluminescence and soft-X-ray emission spectroscopy to study the nanoparticles. Ion-beam mixing followed by heat treatment at 1100 °C for 2 h forms the Si nanocrystals. The ion-beam-mixed sample shows higher PL intensity than that of a Si-implanted SiO₂ film. Photon and electron-excited Si L_2,3 X-ray emission measurements were carried out to confirm the formation of Si nanocrystal in SiO₂ matrix after ion-beam mixing and heat treatment. It is found that Si L_2,3 X-ray emission spectra of ion-beam-mixed Si monolayers in heat-treated SiO₂ films lead to noticeable changes in the spectroscopic fine structure. Received: 20 November 1999 / Accepted: 17 April 2000 / Published online: 5 October 2000     

Resonant inelastic X-ray scattering of the holon-antiholon continuum in SrCuO2

We report a resonant inelastic x-ray scattering study of charge excitations in the quasi-one-dimensional Mott insulator SrCuO2. We observe a continuum of low-energy excitations, the onset of which exhibits a small dispersion of approximately 0.4 eV. Within this continuum, a highly dispersive feature with a large sinusoidal dispersion (approximately 1.1 eV) is observed. We have also measured the optical conductivity, and studied the dynamic response of the extended Hubbard model with realistic parameters, using a dynamical density-matrix renormalization group method. In contrast to earlier work, we do not find a long-lived exciton, but rather these results suggest that the excitation spectrum comprises a holon-antiholon continuum together with a broad resonance.     

Spin reorientation transition in Fe/CeH2 multilayers probed by soft X-ray resonant magnetic scattering

The magnetic domain configurations of Fe 3d spins in Fe/CeH₂ multilayers were measured by soft X-ray resonant magnetic scattering. The interface region could be probed by setting up X-ray standing waves due to the multilayer periodicity. By resolving first- and second-order magnetic scattering contributions, we show that the latter probe directly the magneto-crystalline anisotropy which is dominated by the Fe interface layers causing a spin reorientation transition when the temperature is lowered. Received: 30 May 2001 / Accepted: 4 July 2001 / Published online: 5 October 2001     

硫化锰电子结构的软X射线共振非弹性散射研究

利用软X射线共振非弹性散射谱(resonant inelastic soft X-ray scattering, RIXS)对3d过渡金属硫化物中的硫化锰(MnS)电子结构进行了研究.通过分析Mn²⁺的2p⁶3d⁵→2p⁵3d⁶→2p⁶3d⁵二次光子过程，得到了共振非弹性散射谱中的两类非弹性峰，d-d电子跃迁和电荷转移(charge-transfer)跃迁.这两部分跃迁分别共振增强于L边附近及伴随峰附近.基于Hartree-Fock方法的多重态计算分别模拟了原子近似下和立方体O_h对称群下共振非弹性散射谱及吸收谱.计算得MnS实际晶体场10Dq值介于0.80eV—0.85eV之间.对MnS和MnO CT跃迁差异的讨论表明MnS较强的CT跃迁来源于其较窄的能隙宽度. 关键词： 软X射线共振非弹性散射 软X射线吸收谱 d-d跃迁 电荷转移     

Evidence of SiO at the Si-oxide interface by surface soft X-ray absorption near edge spectroscopy

Using synchrotron radiation a new surface sensitive spectroscopy has been applied to determine the local structure of the first surface oxide layer formed on the Si(111) surface. The Surface Soft X-ray Absorption (SSXA) spectra have been measured. From the analysis of the X-ray Absorption Near Edge Structures (XANES) we have extracted structural information. We have first determined that bulk amorphous SiO has a characteristic microsopic structure, which cannot be described by the random alloy or microcrystalline (Si + SiO₂) mixture models. The oxide layer formed on the Si(111) surface by ground-state molecular excitation in ultra high vacuum at temperatures (～700°C) approaching the oxide dissociation point has this unique SiO local structure. Such SiO layer not formed at room temperature is expected to be present in the SiSiO₂ interface grown at high temperature. An electronic transition to empty states at the SiSiO₂ interface has been observed.     

Resonant inelastic X-ray scattering (RIXS) spectroscopy at the Mn K absorption pre-edge—a direct probe of the 3d orbitals

A study of the Mn K absorption pre-edges in oxides using resonant inelastic X-ray scattering (RIXS) spectroscopy is presented. The energy transfer dimension enhances the separation of the pre-edge (predominantly 1s to 3d transitions) from the main K-edge and a detailed analysis is thus possible. The RIXS spectra are sensitive to the Mn spin state. The technique thus yields detailed information on the electronic structure that is not accessible in conventional K-edge absorption spectroscopy. The line splittings can be understood within a ligand field multiplet model, showing the importance of (2p,3d) two-electron interactions that give rise to the spin-sensitivity.     

Review of defect investigations by means of positron annihilation in II-VI compound semiconductors

1-x Cd_xTe after post-growth annealing. The experiments on defect generation and annihilation after low-temperature electron irradiation of II-VI compounds are also reviewed. The characteristic positron lifetimes are given for cation and anion vacancies. Received: 19 November 1997/Accepted: 20 November 1997     

Electric field of a buried interfacial region measured by positron-lifetime spectroscopy

Positrons from a radioactive source are implanted into a reverse-biased metal–semiconductor contact and are drifted back towards the contact by the internal electric field where they trap into voids and annihilate. The electric field dependent interface annihilation fraction is monitored by way of the intensity of the long (∼400–500 ps) void lifetime component using positron-lifetime spectroscopy. Unlike previous analyses of such systems a numerical model involving positron drift, annihilation and trapping into the interfacial state has been constructed to describe the positron dynamics in the presence of the non-uniform junction electric field. The use of the positron-lifetime technique in probing the internal electric field at buried contacts is thus demonstrated. Results obtained using the numerical method for the Au, Al and Ni/Semi-Insulating (SI)-GaAs contact systems are found to be consistent with the findings of previous studies on the Au/SI-GaAs system. Received: 29 November 2000 / Accepted: 26 February 2001 / Published online: 25 July 2001     

Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances

Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics.     

火焰原子吸收光谱法测定光学新材料钛酸钡锶中钡和锶

本文介绍了火焰原子吸收光谱法测定光学新材料钛酸钡锶中钒和锶，研究样品制备、测试条件和共存元素干扰，本法的准确度和精密度均满意。