增强相/夹杂内螺位错偶极子与含共焦钝裂纹椭圆夹杂的干涉效应

运用弹性力学的复势方法,研究了纵向剪切下增强相/夹杂内螺型位错偶极子与含共焦钝裂纹椭圆夹杂的干涉效应,得到了该问题复势函数的封闭形式解答,由此推导出了夹杂区域的应力场、作用在螺型位错偶极子中心的像力和像力偶矩以及裂纹尖端应力强度因子级数形式解。并分析了位错偶极子倾角 、钝裂纹尺寸和材料常数对位错像力、像力偶矩以及应力强度因子的影响。数值计算结果表明：位错像力、像力偶矩以及应力强度因子均随位错偶极子倾角做周期变化;夹杂内部的椭圆钝裂纹明显增强了硬基体对位错的排斥,减弱了软基体对位错的吸引,且对于硬夹杂,位错出现了一个不稳定平衡位置,该平衡位置随钝裂纹曲率的增大不断向界面靠近;变化 值将出现改变位错偶极子对应力强度因子作用方向的临界值。     

位错偶极子和Ⅲ型界面裂纹的干涉效应

研究了多晶体材料中螺型位错偶极子和界面裂纹的弹性干涉作用.利用复变函数方法,得到了该问题复势函数的封闭形式解答.求出了由位错偶极子诱导的应力场和裂纹尖端应力强度应子,分析了偶极子的方向,偶臂和位置以及材料失配对应力强度因子的影响.推导了作用在螺型位错偶极子中心的像力和力偶矩,并讨论了界面裂纹几何条件和不同材料特征组合对位错偶极子平衡位置的影响规律.结果表明,裂纹尖端的螺型位错偶极子对应力强度因子会产生强烈的屏蔽或反屏蔽效应.同时,界面裂纹对螺型位错偶极子在材料中运动有很强的扰动作用.     

螺型位错偶极子与界面钝裂纹的干涉效应

研究了螺型位错偶极子与界面钝裂纹的干涉效应.应用保角变换技术,得到了复势函数与应力场的封闭解析解,讨论了位错偶极子方位、臂长及裂纹钝化程度对位错偶板子屏蔽效应和发射条件的影响.结果表明,与单个螺型位错不同,螺型位错偶极子与x轴夹角在一定范围内时才可以降低界面钝裂纹尖端的应力强度因子(屏蔽效应),屏蔽效应随偶板子臂长的增大而增强,随裂纹钝化程度的增大而增强,屏蔽区域也随裂纹钝化程度的增大而增大;位错偶极子发射所需的临界无穷远加载随偶极子臂长的增加而减小,随位错方位角及裂纹钝化程度的增加而增大;最可能的位错偶极子发射角度为0.螺型位错偶极子的发射比单个螺型位错的发射要困难.本文解答的特殊情况与相关文献给出的解答一致.     

楔型向错偶极子与含界面裂纹圆形夹杂的弹性干涉

运用共形映照、解析延拓以及柯西型积分运算等复变函数方法研究无限大平面中楔型向错偶极子与界面裂纹、圆形夹杂的弹性干涉问题.求出含一条裂纹应力场的封闭形式解后,推导了裂纹尖端应力强度因子和作用在向错偶极子中心的向错力的表达式,研究了偶极子位置、方向、偶臂长度及材料性质对应力强度因子的影响,并分析了裂纹及夹杂对逐渐靠近的向错偶极子排斥或吸引作用的规律.     

压电螺型位错和共线界面刚性线夹杂的干涉效应

研究了压电材料中压电螺型位错和共线界面导电刚性线夹杂的电弹干涉效应．运用复变函数解析延拓技术与奇性主部分析方法,获得了该问题的一般解答．作为算例,求出了界面含一条刚性线夹杂时两种压电介质区域广义应力函数的封闭形式解．导出了作用在位错上的像力和刚性线夹杂表面剪应力和电位移的解析表达式．讨论了界面刚性线长度,两种材料的剪切模量比和压电系数比对位错力和刚性线表面剪应力的影响规律．为进一步研究该类问题提供了一个基本解。     

含界面效应纳米尺度圆环形涂层中螺型位错分析

研究了纳米尺度圆环形涂层(界面层)中螺型位错与圆形夹杂以及无限大基体材料的干涉效应.涂层与夹杂的界面和涂层与基体的界面均考虑界面应力效应.运用复势方法,获得了三个区域复势函数的解析解答.利用求得的应力场和Peach-Koehler公式,得到了作用在螺型位错上位错力的精确表达式.主要讨论了界面应力对涂层(界面层)中螺型位错运动和平衡稳定的影响规律.结果表明,界面应力对界面附近位错的运动有大的影响,由于界面应力的存在,可以改变涂层内位错与夹杂/基体干涉的引斥规律,并使位错在涂层内部产生三个稳定或非稳定的平衡点.考虑界面效应后,有一个额外的排斥力或吸引力作用在位错上,使原有的位错力增加或减小.     

穿透夹杂界面的半无限楔形裂纹尖端螺型位错的发射研究

摘要：研究了穿透圆形夹杂界面的半无限楔形裂纹与裂纹尖端螺型位错的干涉问题。应用复变函数解析延拓技术与奇性主部分析方法,得到了位错位于半圆形夹杂内部时,半无限基体和半圆形夹杂内复势函数的解析解。然后利用保角映射技术得到了穿透圆形夹杂界面的半无限楔形裂纹尖端螺型位错产生的应力场以及作用在位错上的位错力的解析表达式。主要讨论了螺型位错对裂纹的屏蔽效应以及从楔形裂纹尖端发射位错的临界载荷条件。研究结果表明正的螺型位错可以削弱楔形裂纹尖端的应力强度因子,屏蔽裂纹的扩展,屏蔽效应随位错方位角的增大而减小。位错发射所需的无穷远临界应力随发射角的增加而增大,最可能的位错发射角度为零度,直线裂纹尖端位错的发射比楔形裂纹尖端位错的发射更容易,硬基体抑制位错的发射。     

纵向剪切下含共焦刚性核弹性椭圆夹杂中的螺型位错干涉

摘 要 研究了无穷远纵向剪切下无限大基体中含共焦刚性核弹性椭圆夹杂内任意位置螺型位错的干涉问题。运用复变函数保角映射、解析延拓等方法,获得了基体与夹杂区域的应力场的级数形式精确解,并得出了位错像力的解析表达式,导出了纵向剪切下两椭圆界面最大应力及其比值公式。分析结果表明：夹杂内部的刚性核对位错与夹杂的干涉产生明显的扰动效应,排斥硬夹杂内位错,并使之不断趋近弹性夹杂界面。对于软夹杂,夹杂中的位错存在稳定的平衡位置,当位错位于刚性核和平衡位置之间时,位错会趋于弹性夹杂界面;当位错位于平衡位置和弹性夹杂界面之间时,位错会离开界面。结果还显示,夹杂的长轴和短轴之比对位错与夹杂的干涉也有着不可忽视的影响,尤其当位错在刚性核附近时,随着夹杂的长、短轴比值的减小,核对位错的排斥力也明显减弱。本文解答包含了多个以往文献成果。     

纳米线涂层中失配位错偶极子分析

研究了纳米线环形晶体薄膜涂层中失配位错偶极子与纳米线的干涉效应,并考虑纳米尺度应力效应及纳米线晶格失配的影响。运用弹性复势方法,分别获得了涂层和纳米线区域复势函数的精确解析解。利用求得的应力场和Peach-Koehler公式,得到了作用在螺型位错偶极子上像力和失配应力的精确表达式。算例结果表明,涂层纳米线界面应力和失配应力对涂层中失配位错偶极子的作用影响很大,由于界面应力和失配应力的存在,可以改变涂层内位错偶极子与纳米线干涉的引斥规律。与宏观尺度下的线型材料相比,纳米线材料由于界面效应的影响,位错偶极子在涂层中平衡位置的数量增加,涂层中更容易产生失配位错偶极子。考虑纳米线晶格失配的影响后,位错偶极子在涂层中平衡位置的数量增加。由此可知,减小纳米线晶格失配的影响,可以控制失配位错偶极子的产生。     

一维六方准晶中螺型位错偶极子与直线纳米裂纹的干涉效应

关于准晶中螺型位错偶极子与直线纳米裂纹干涉效应的问题，提出了一种可获得精确解的新方法。首先，将Gurtin-Murdoch表/界面理论推广运用到准晶材料中的纳米裂纹问题，建立了裂纹表面上含声子场、相位子场的应力边界模型；然后，利用复变函数中的共形映射方法，将直线裂纹问题化为单位圆孔问题；再借助于柯西积分方法获得了问题的封闭解；最后，数值结果表明：当裂纹的尺寸减小到纳米量级时，表面效应将对声子场和相位子场中的应力场、像力及像力偶矩产生显著的影响，从而改变其力学性能，即裂纹尺寸越小，表面效应越强，声子场和相位子场中的应力场、像力及像力偶矩的数值变化越大；螺型位错偶极子力偶臂的方向对像力的极值和自身平衡亦有较大影响。     

Electro-elastic interaction between a piezoelectric screw dislocation and circular interfacial rigid lines

The electro-elastic interaction between a piezoelectric screw dislocation located either outside or inside inhomogeneity and circular interfacial rigid lines under anti-plane mechanical and in-plane electrical loads in linear piezoelectric materials is dealt with in the framework of linear elastic theory. Using Riemann–Schwarz’s symmetry principle integrated with the analysis of singularity of complex functions, the general solution of this problem is presented in this paper. For a special example, the closed form solutions for electro-elastic fields in matrix and inhomogeneity regions are derived explicitly when interface containing single rigid line. Applying perturbation technique, perturbation stress and electric displacement fields are obtained. The image force acting on piezoelectric screw dislocation is calculated by using the generalized Peach–Koehler formula. As a result, numerical analysis and discussion show that soft inhomogeneity can repel screw dislocation in piezoelectric material due to their intrinsic electro-mechanical coupling behavior and the influence of interfacial rigid line upon the image force is profound. When the radian of circular rigid line reaches extensive magnitude, the presence of interfacial rigid line can change the interaction mechanism.     

A SCREW DISLOCATION IN A THREE-PHASE COMPOSITE CYLINDER MODEL WITH INTERFACIAL RIGID LINES

The problem of the elastic interaction between a screw dislocation and a three-phase circular inclusion with interracial rigid lines （anti-cracks） is investigated. An efficient and concise method for the complex multiply connected region is developed, with which explicit series form solutions of the complex potentials in the matrix, and the interphase layer and inclusion regions are derived. Based on the complex potentials, the image force on the screw dislocation is then calculated by using the Peach-Koehler formula. The equilibrium position of the dislocation is discussed in detail for various rigid line geometries, interphase layer thicknesses and material property combinations. The main results show that the interracial rigid lines exert a significant perturbation effect on the motion of the screw dislocation near the circular inclusion surrounded by an interphase layer.     

Interaction of an anti-plane singularity with interfacial anti-cracks in cylindrically anisotropic composites

Anti-plane problem for a singularity interacting with interfacial anti-cracks (rigid lines) under uniform shear stress at infinity in cylindrically anisotropic composites is investigated by utilizing a complex potential technique in this paper. After obtaining the general solution for this problem, the closed solution for the interface containing one anti-crack is presented analytically. In addition, the complex potentials for a screw dislocation dipole inside matrix are obtained by the superimposing method. Expressions of stress singularities around the anti-crack tips, image forces and torques acting on the dislocation or the center of dipole are given explicitly. The results indicate that the anisotropy properties of materials may weaken the stress singularity near the anti-crack tip for the singularity being a concentrated force but enhance the one for the singularity being a screw dislocation and change the equilibrium position of screw dislocation. The presented solutions are valid for anisotropic, orthotropic or isotropic composites and can be reduced to some new or previously known results.     

INTERACTION OF A DISLOCATION DIPOLE WITH A MODE III INTERFACE CRACK

Interaction between a screw dislocation dipole and a mode III interface crack is investigated. By using the complex variable method, the closed form solutions for complex potentials are obtained when a screw dislocation dipole lies inside a medium. The stress fields and the stress intensity factors at the tip of the interface crack produced by the screw dislocation dipole are given. The influence of the orientation, the dipole arm and the location of the screw dislocation dipole as well as the material mismatch on the stress intensity factors is discussed. The image force and the image torque acting on the screw dislocation dipole center are also calculated. The mechanical equilibrium position of the screw dislocation dipole is examined for various material property combinations and crack geometries. The results indicate that the shielding or anti-shielding effect on the stress intensity factor increases abruptly when the dislocation dipole approaches the tip of the crack. Additionally, the disturbation of the interface crack on the motion of the dislocation dipole is also significant.     

INTERACTION OF A DISLOCATION DIPOLE WITH A MODE Ⅲ INTERFACE CRACK

Interaction between a screw dislocation dipole and a mode Ⅲ interface crack is investigated. By using the complex variable method, the closed form solutions for complex potentials are obtained when a screw dislocation dipole lies inside a medium. The stress fields and the stress intensity factors at the tip of the interface crack produced by the screw dislocation dipole are given. The influence of the orientation, the dipole arm and the location of the screw dislocation dipole as well as the material mismatch on the stress intensity factors is discussed. zThe image force and the image torque acting on the screw dislocation dipole center are also calculated. The mechanical equilibrium position of the screw dislocation dipole is examined for various material property combinations and crack geometries. The results indicate that the shielding or anti-shielding effect on the stress intensity factor increases abruptly when the dislocation dipole approaches the tip of the crack. Additionally, the disturbation of the interface crack on the motion of the dislocation dipole is also significant.     

A piezoelectric screw dislocation interacts with interfacial collinear rigid lines in piezoelectric bimaterials

Based on the complex variable method and perturbation technique, an analytical closed-form solution is derived for the interaction between a screw dislocation and collinear rigid lines along the interface of two dissimilar piezoelectric media under remote anti-plane mechanical and in-plane electrical loading. The rigid lines are either conducting or dielectric. The dislocation core is subjected to a line-force and a line-charge. A square-root singularity of field variables near the tip of an interfacial rigid line is observed. The rigid line extension force acting on the tip is obtained in terms of the strain and electric field intensity factor. The force on the dislocation due to the interfacial rigid line is calculated. The influence of the angular position of the dislocation, material properties and electromechanical coupling factor on the force is studied in detail.     

ANALYSIS OF A SCREW DISLOCATION INSIDE A CIRCULAR INCLUSION WITH INTERFACIAL CRACKS IN PIEZOELECTRIC COMPOSITES

IntroductionPiezoelectric materials have potentials for use in many modern devices and compositestructures. The presence of various defects, such as inclusions, holes, dislocations andcracks, can greatly influence their characteristics and coupled behavio…