Boson peak of AsxS1−x glasses and theoretical calculations of low frequencies clusters vibrations

The results of comparison of spectral position of the LF bands of g-As₂S₃ and g-As₂₂S₇₈ with theoretical calculations of vibrational spectra of different clusters (As₂S₄, As₂S₅, As₂S₆, AsS₃-As₃) in the LF region (10-85 cm⁻¹) are given. The torsion type vibrations of the small chain-like clusters are located in the same spectral region as Boson peak of As-S glasses system. They can make several contributions to the LF spectrum. The cluster lengths by weight distribution functions f(L)*L are from 5.5 to 10.1 Å and from 4.5 to 7.5 Å for g-As₂S₃ and g-As₂₂S₇₈, respectively. The lognormal fittings of the f(L)*L functions give the most probably values about the 7.6 Å (for g-As₂S₃) and 6.2 Å (for g-As₂₂S₇₈).     

Predominant factors affecting the dielectric and piezoelectric properties of bismuth-containing complex perovskite solid solution

To study the factors affecting the dielectric and piezoelectric properties of bismuth-containing complex perovskites, the solid solution (1−x)Pb(Mg_1/3Nb_2/3)O₃-xBi(Mg_2/3Nb_1/3)O₃ was prepared by the solid state reaction method and its dielectric and piezoelectric properties were investigated. It is found that (1) at room temperature, the nonlinearity of the DE-loop for Pb(Mg_1/3Nb_2/3)O₃ is completely suppressed at a rather low x (<5%); (2) dielectric constant versus temperature curves deviate from the Curie-Weiss law at a temperature T_d much higher than the dielectric constant peak temperature T_m and T_m−T_d decreases considerably with increasing x; and (3) frequency dispersion ΔT_m=T_m (1 MHz)−T_m (10 kHz) increases with increasing x. Possible factors responsible for the variation of the dielectric and piezoelectric properties with x are discussed.     

Vehicular traffic through a self-similar sequence of traffic lights

We study the dynamical behavior of vehicular traffic through a sequence of traffic lights positioned self-similarly on a highway, where all traffic lights turn on and off simultaneously with cycle time T_s. The signals are positioned self-similarly by Cantor set. The nonlinear-map model of vehicular traffic controlled by self-similar signals is presented. The vehicle exhibits the complex behavior with varying cycle time. The tour time is much lower such that signals are positioned periodically with the same interval. The arrival time T(x) at position x scales as (T(x)-x)∝x^d_f, where d_f is the fractal dimension of Cantor set. The landscape in the plot of T(x)−x against cycle time T_s shows a self-affine fractal with roughness exponent α=1−d_f.     

Fast and efficient VUV/UV emissions from (Ba,La)F2:Er crystals

We report observation of fast and efficient VUV/UV luminescence from the mixed (Ba,La)F₂:Er crystals. The broad bands, peaking at 162.5, 181.9, 194.2, 202.8, 216.1, 233.5 and 281.5 nm and decaying, at 10 and 293 K, with time constants of 46 and 35 ns respectively, are due to spin-allowed transitions from the low-spin (LS) state of the 4f¹⁰5d configuration.We also observed a weak and slow broad band emission peaking at 170 nm due to the spin-forbidden transition from the high-spin (HS) state of the 4f¹⁰5d configuration.While at room temperature the excitation into any of the three identified LS bands (J=8, 7 and 6) dominating the excitation spectrum yields fast VUV and UV emissions, at 10 K the excitation into higher lying J=7 and 6 bands generates slow and sharp line emissions. The positions of these lines fit energies of transitions originating from the ²G_7/2 multiplet at 66140 cm⁻¹. The emission from the ²G_7/2 multiplet has been never, to the best of our knowledge, observed before.The efficient and fast VUV and UV emissions from the higher (LS, J=8) with almost no contribution from the lower (HS, J=8) level of the 4f¹⁰5d configuration are possible because the modified crystal field in (Ba,La)F₂ shifts the level of the (LS, J=8) state below the ²F_5/2 multiplet which, therefore, does not contribute to nonradiative relaxation between the LS and HS levels.We conclude that the ²G_7/2 and ²F_5/2 levels have major impact on VUV and UV emissions from the Er³⁺ ion in (Ba,La)F₂ contributing to complex emission pattern described in this report Their key role, elucidated by the VUV and UV luminescence spectroscopy, is consistent with predictions from a simple configuration coordinate model based on experimental results and calculations of the 4f¹¹ energy levels.     

Structural properties and scaling of the radius of gyration of two-dimensional star-branched polymers grown by diffusion

We built up star-branched polymers, whose morphology is fully determined by diffusion, with p=1,3,6 and 12 branches with a total of 30,000 monomer units. We investigated their structural properties by calculating the monomer-monomer correlation functions. A detailed finite size scaling analysis of the radius of gyration was also performed to determine the exponent and the corrections to scaling. From these results we calculated the fractal dimension of the branched aggregates and obtained: d_f=1.222(7), for the linear chain, d_f=1.2305(8), d_f=1.247(8) and d_f=1.261(8) for the three, six and twelve branches polymer, respectively.     

Low-temperature transport properties of individual SnO2 nanowires

Stannic oxide (SnO₂) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO₂ nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation lnR∼T^−1/2. On the I-V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears.     

The switch of the worst case on NBTI and hot-carrier reliability for 0.13 μm pMOSFETs

This investigation describes experiments on two sizes of p-channel metal-oxide-semiconductor field-effect-transistors (pMOSFETs), to study the negative bias temperature instability (NBTI) and hot-carrier (HC) induced degradation. This work demonstrates that the worst condition for pMOSFETs under HC tests occurs in CHC (channel HC, stressed at V_g = V_d) mode at high temperature. This study also shows that the worst degradation of pMOSFETs should occur in NBTI. This inference is based on a comparison of results for forward saturation current (I_ds,f) and reverse saturation current (I_ds,r) obtained in NBTI and HC tests.     

The microscopic interaction parameters for Er/Ho energy transfer in tellurite glasses

We investigate the energy transfer between Er³⁺/Ho³⁺ in tellurite glasses. The main channels of energy transfer between Er³⁺/Ho³⁺ are analyzed in detail. The microscopic interaction parameters of resonant and non-resonant (phonon-assisted) energy transfer parameters via Er³⁺→Ho³⁺ are calculated. The result shows that the resonant energy transfers Er³⁺(²H_11/2(⁴S_3/2))→Ho³⁺(⁵F₄(⁵S₂)) and Er³⁺(⁴F_9/2)→Ho³⁺(⁵F₅) are very efficient and non-resonant energy transfers Er³⁺(⁴I_13/2)→Ho³⁺(⁵I₇) and Er³⁺(⁴I_11/2)→Ho³⁺(⁵I₆), which are a phonon-assisted energy transfer process because of energy mismatch are also existed and cannot be neglected.     

Broadband amplification and upconversion luminescence properties of Er/Yb co-doped fluorophosphate glass

Broadband and upconversion properties were studied in Er³⁺/Yb³⁺ co-doped fluorophosphate glasses. Large Ω₆ and S_ed/(S_ed+S_md) values and the flat gain profile over 1530-1585 nm indicate the good broadband properties of the glass system. And a premise of using Ω₆ as a parameter to estimate the broadband properties of the glasses is proposed for the first time to our knowledge. Results showed that fluorescence intensity, upconversion luminescence intensity, the intensity ratio of red/green light (656 nm/545 nm) are closely related to the Yb³⁺:Er³⁺ ratio and Er³⁺ concentration, and the corresponding calculated lifetime of ⁴F_9/2 and ⁴S_3/2 states for red and green upconversion samples proves this conclusion. The upconversion mechanism is also discussed.     

Luminescence study of the 4f5d configuration of Nd in LiYF4, LiLuF4 and BaY2F8 crystals

Ultraviolet fluorescence of Nd³⁺ ions induced by triphotonic excitation process was studied in Nd-doped LiYF₄, LiLuF₄ and BaY₂F₈ crystals using a technique of time-resolved spectroscopy. The observed ultraviolet luminescence was due to transitions between the bottom of 4f²5d configuration and 4f³ states of Nd³⁺ ions. Narrow emission lines superposed to the broadband emissions were observed. A detailed analysis of luminescence spectrum revealed that the narrow emissions are due to parity and spin allowed radiative transitions from the Stark levels of ⁴K_11/2(5d) state created by the electrostatic interaction between the 5d electron and the two electrons of the 4f² configuration. The narrow emissions are related to the high spin state (S=3/2) which gives f-f characteristics to the f-d broadband emissions. The narrow emissions superposed to the wide emission correspond to 18%, 34% and 43% of the integrated broadband emission at 262 nm observed in LiYF₄, LiLuF₄ and BaY₂F₈ crystals, respectively. Although the 5d-4f² interaction is observed to be weaker than 5d-crystal field interaction, it is stronger enough to select only the radiative transitions from 4f²5d configuration to 4f³ states that preserves the total spin S=3/2.     

ESR spectra of Eu centers in defect Ga2S3 single crystals

In this paper, the author presents the results of measurements of the low-temperature and angular dependences of the ESR spectra of Eu²⁺ centers in defect Ga₂S₃ single crystals in the temperature range 8–29 K and for 0–180° orientations of the static magnetic field. The electron structure of impurity ¹⁵¹Eu atoms in Ga₂S₃:Eu single crystals has been studied by using the ESR method at different doping proportions of Eu atoms. Ga₂S₃ single crystals were grown from the melt using the Bridgman method. The Eu concentration was determined by atomic absorption analysis and X–ray fluorescence analysis (XRFA). By investigation on the ESR spectra, the author has first determined the values of charge states for Eu, which have turned out to be a Eu²⁺(4f⁷) ion with spin S=7/2, g=4.18±0.02 and concentration of the states of Eu N=6.3×10¹⁴ cm⁻³.     

L12 phase formation and giant exchange anisotropy in Mn3Ir/Co–Fe bilayers

The degree of order S of Mn–Ir layers and the exchange anisotropy of Mn–Ir/Co–Fe bilayers were investigated for various chemical compositions of Mn–Ir layers, underlayer materials, and underlayer thicknesses. It was found that: (1) The compositional range over which L1₂-phase Mn₃Ir could be formed is 22–32 at% Ir and giant exchange anisotropy is obtained in this range. (2) Ru is favorable as an underlayer material for avoiding interdiffusion with the Mn–Ir layer during deposition on the temperature elevated substrate. (3) The underlayer thickness could be reduced to 5 nm while maintaining a giant exchange anisotropy in excess of 1 erg/cm².     

Cells anchored upon a thin organic film with different nano-mechanical properties

By applying dynamic contact module and particular measurement of phase angles, harmonic contact stiffness (S) along with the measured displacement (D) of different self-assembled monolayers (SAMs) adsorbed on Au can be distinguished. The relatively ordered and hydrophobic ODT and DDT molecules adsorbed on Au form high contact stiffness, which are presumably unfavorable substrates for a cell to adhere upon. Short-chain MUA molecules adsorbed on Au provides a hydrophilic characteristic with a relatively low contact stiffness, which may significantly promote cell adhesion. It is, therefore, estimated that the behavior of a cell adhered on SAMs/Au is correlated not only with their outermost chemical species but also with a proper dS/dD matrix acting as a cushion.     

Textural and electronic characteristics of mechanochemically activated composites with nanosilica and activated carbon

Nanosilicas (A-50, A-300, A-500)/activated carbon (AC, S_BET = 1520 m²/g) composites were prepared using short-term (5 min) mechanochemical activation (MCA) of powder mixtures in a microbreaker. Smaller silica nanoparticles of A-500 (average diameter d_av = 5.5 nm) can more easily penetrate into broad mesopores and macropores of AC microparticles than larger nanoparticles of A-50 (d_av = 52.4 nm) or A-300 (d_av = 8.1 nm). After MCA of silica/AC, nanopores of non-broken AC nanoparticles remained accessible for adsorbed N₂ molecules. According to ultra-soft X-ray emission spectra (USXES), MCA of silica/AC caused formation of chemical bonds Si-O-C; however, Si-C and Si-Si bonds were practically not formed. A decrease in intensity of OK_α band in respect to CK_α band of silica/AC composites with diminishing sizes of silica nanoparticles is due to both changes in the surface structure of particles and penetration of a greater number of silica nanoparticles into broad pores of AC microparticles and restriction of penetration depth of exciting electron beam into the AC particles.     

VUV spectroscopic properties of Ce and Pr-doped AREP2O7-type alkali rare earth diphosphates (A=Na, K, Rb, Cs; RE=Y, Lu)

Spectroscopic properties of Ce³⁺ and Pr³⁺-doped AREP₂O₇-type alkali rare earth diphosphates (A=Na, K, Rb, Cs; RE=Y, Lu) have been investigated using VUV spectroscopy technique. Ce³⁺-doped samples show typical Ce³⁺ emission in the range of 325-450 nm. The strong host absorption band starting at around 160 nm indicates that the optical band gap of AREP₂O₇ hosts is at least 7.7 eV, and the host→Ce³⁺ energy transfer process is rather efficient. However, AREP₂O₇:Pr³⁺ samples show less efficient host→Pr³⁺ energy transfer. The direct Pr³⁺ 4f²→4f¹5d¹ excitation, which are 12160±640 cm⁻¹ higher respect to that of Ce³⁺, leads to strong 4f¹5d¹→4f² emission bands in the range of 230-325 nm but no obvious 4f²→4f² emission lines.     

Mott-type hopping conduction in the ordered and disordered phases of LiCoO2

The temperature dependence of dc resistance was observed in the range of for layered-rock-salt (hexagonal structure, ordered distribution between Li and Co) and modified-spinel (cubic, random distribution) phases of LiCoO₂. The results suggest Mott-type hopping conduction arising from the localized Co-3d electrons in the valence band. The densities of states (DOS) at the Fermi energy (E_F) estimated from the slope of the resistance curves were 2.0×10²⁰ and 5.5×10¹⁹ cm⁻³ eV⁻¹ for the ordered and disordered phases, respectively. The relatively low DOS at E_F in the disordered phase suggests that E_F approaches the edge of the valence band as a result of the narrowing of Co-t_2g bands due to the higher lattice symmetry in the disordered phase.     

Tunneling magnetoresistance in exchange-biased CoFeB/AlOx/Co/IrMn junctions

A series of exchange-biased magnetic tunneling junctions (MTJs) were made in an in-plane deposition field (h) = 500 Oe. The deposition sequence was Si(1 0 0)/Ta(30 Å)/CoFeB(75 Å)/AlO_x(d Å)/Co(75 Å)/IrMn(90 Å)/Ta(100 Å), where d was varied from 12 Å to 30 Å. The MTJ was formed by the cross-strip method with a junction area of 0.0225 mm². The tunneling magnetoresistance (ΔR/R) of each MTJ was measured. The high-resolution cross-sectional transmission electron microscopic (HR X-TEM) image shows the very smooth interface and clear microstructure. X-ray diffraction (XRD) demonstrates that the IrMn layer of the MTJ exhibits a (1 1 1) texture. From the results (ΔR/R) increases from 17% to 50%, as d increases from 12 Å to 30 Å. The tunneling resistance (R_o) of these junctions ranges from 150 Ω to 250 Ω. The exchange-biasing field (H_ex) of the MTJ is 50-95 Oe. Finally, the saturation resistance (R_s) was measured as a function of the angle (α) of rotation, where α is the angle between h and the in-plane saturation field (H_s) = 1.1 kOe. The following figure presents the dependence of R_s on α, instead of originally expected independence, the curve actually varies with a period of π.     

Standard and non-standard metarefraction with confocal lenslet arrays

A recent paper demonstrated that two lenslet arrays with focal lengths f₁ and f₂, separated by f₁+f₂, change the direction of transmitted light rays approximately like the interface between isotropic media with refractive indices n₁ and n₂, where n₁/n₂=-f₁/f₂ [J. Courtial, New J. Phys. 10 (2008) 083033]. This is true if light passes through corresponding lenslets, that is lenslets that share an optical axis. Light can also pass through different combinations of non-corresponding lenslets. Such light can be either absorbed or allowed to form “ghost images”; either way, it leads to a limitation of the field of view of confocal lenslet arrays. This paper describes, qualitatively and quantitatively, a number of such field-of-view limitations.     

TiO2-nonstoichiometry dependence on piezoelectric properties and depolarization temperature of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06Ti_xO_1+2x lead-free piezoceramics with x varying from 0.97 to 1.03 were fabricated and characterized in order to investigate the effects of TiO₂-nonstoichiometry on the piezoelectric properties and depolarization temperature of (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ composition. X-ray diffraction (XRD) analysis showed that all samples have a single phase of perovskite structure with rhombohedral symmetry. Piezoelectric and dielectric measurements revealed that deficiency of TiO₂ leads to an increase in the piezoelectric coefficient (d₃₃), free relative permittivity (), and loss tangent (tan δ) besides an increase in the electromechanical coupling coefficient (k_p) within a certain amount, while excess of TiO₂ results in a decrease in k_p, d₃₃, and , but an increase in tan δ. Depolarization temperature (T_d) measurement indicated a decrease and an increase in T_d as a result of increasing TiO₂ deficiency and TiO₂ excess, respectively. This TiO₂-nonstoichiometry also induced changes in the remanent polarization (P_r) and coercive field (E_c) of the ceramics.