Exchange coupling in ultrathin epitaxial yttrium iron garnet films

Magnetic exchange coupling has been observed for ultrathin films of yttrium iron garnet (Y₃Fe₅O₁₂ or YIG). Single-crystalline YIG films were prepared on yttrium aluminium garnet (Y₃Al₅O₁₂ or YAG) substrates by pulsed laser deposition. (111) and (110) oriented substrates were used. Film thicknesses were varied from 180 ? to 4600 ?. Epitaxial growth of YIG on YAG was obtained in spite of the lattice mismatch of 3%. Magnetic hysteresis loops recorded for ultrathin YIG films have a “bee-waist” shape and show a coupling between two different magnetic phases. The first phase is magnetically soft YIG. A composition study by secondary ion mass spectroscopy shows the second phase to be Y₃Fe_5-xAl_xO₁₂ due to the interdiffusion of Fe and Al at the film/substrate interface. This compound is known to be magnetically harder and to have weaker magnetization than YIG. The coupling of the two phases leads to a hysteresis loop displacement at low temperatures. This displacement varies differently with film thickness for two substrate orientations. Assuming an interfacial coupling, the maximal interaction energy is estimated to be about 0.17 erg/cm² at 5 K for (111) oriented sample. Received 3 June 2002 / Received in final form 7 October 2002 Published online 27 January 2003 RID="a" ID="a"Presently at LPM, Université H. Poincaré, BP 239, 54506 Vandœuvre-lès-Nancy e-mail: popova@lpm.u-nancy.fr     

Exchange bias and training effect in Ni/Ag-doped NiO bilayers

A series of polycrystalline Ag-doped Ni_1−xAg_xO/Ni bilayers with x up to 0.2 were prepared by magnetron sputtering. X-ray diffraction, atomic force microscopy and transmission electron microscopy analyses reveal that Ag doping significantly reduces the mean NiO grain size and leads to the appearance of Ag nanoparticles on the surface of the Ag-doped NiO films. As x increases, the exchange bias field and coercivity at room temperature decrease as a consequence of the reduced thermal stability of smaller NiO grains and the screening effect resulting from the interfacial Ag nanoparticles. At lower temperatures, a slight enhancement of the exchange bias field is observed in the Ag-doped sample, indicating that the Ag doping increases the uncompensated NiO spin density. In addition, our studies find that the training effect of the Ag-doped sample can be well described by a spin configurational relaxation model, regardless of the presence of Ag nanopartiles at the interface.     

Intrinsic stress of ultrathin epitaxial films

The present article focuses on the stress developing during the deposition of ultrathin epitaxial films in the thickness range of a few atomic layers. The studied systems exhibit the three well-known modes of film growth: Stranski–Krastanow mode [Ge/Si(001), Ge/Si(111), Ag/Si(111)], Frank–Van der Merwe mode [Fe/MgO(001)] and Volmer–Weber mode [Ag/mica(001), Cu/mica(001)]. The experimental results demonstrate the important role of the misfit strain as well as the contribution of surface stress effects as mechanisms for the stress in single atomic layers. Received: 26 April 1999 / Accepted: 25 June 1999 / Published online: 6 October 1999     

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]₂multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.     

Magnetic properties of ultrathin Ni films

The magnetic properties of Au/Ni/Si(100) films with Ni thicknesses of 8–200 Å are studied at T=77 K using a scanning magnetic microscope with a thin-film high-temperature dc SQUID. It is found that the Ni films, with an area of 0.6×0.6 mm, which are thicker than 26 Å have a single-domain structure with the magnetic moment oriented in the plane of the film and a saturation magnetization close to 0.17 MA/m. For films less than 26 Å thick, the magnetization of the film is found to drop sharply.     

Low relaxation rate in epitaxial vanadium-doped ultrathin iron films

The longest relaxation time and sharpest frequency content in ferromagnetic precession is determined by the intrinsic (Gilbert) relaxation rate G. For many years, pure iron (Fe) has had the lowest known value of G = 57 MHz for all pure ferromagnetic metals or binary alloys. We show that an epitaxial iron alloy with vanadium (V) possesses values of G which are significantly reduced to 35 +/- 5 MHz at 27% V. The result can be understood as the role of spin-orbit coupling in generating relaxation, reduced through the atomic number Z.     

Strain analysis of epitaxial ultrathin films on Pt(111)

X-ray photoelectron diffraction (XPD) measurements have demonstrated that Ni ultrathin films on Pt(111) exhibit a single domain fcc stacking pseudomorphic to the substrate, with a consequent trigonal distortion of the Ni unit cell in order to accommodate the in-plane expansion of the Ni lattice parameter of about 11% with respect to its bulk value. We show that the amount of interlayer contraction and the strain energy resulting form the trigonal distortion are very well predicted by a strain analysis in the framework of simple linear elasticity theory. Strain analysis also allows to discuss in some detail the controversial case of Co growth on the same substrate. Finally, we discuss the dependence of the strain energy of the overlayer on the substrate crystal orientation and its effects on chemisorption experiments performed on heteroepitaxial monolayers (HML).     

Exchange bias of mu-metal thin films

The exchange bias of the soft ferromagnet mu-metal, _{Ni77Fe14Cu5Mo4}${\mathrm{Ni}}_{77}{\mathrm{Fe}}_{14}{\mathrm{Cu}}_5{\mathrm{Mo}}_4$, with the metallic antiferromagnet _Fe50Mn50${\mathrm{Fe}}_{50}{\mathrm{Mn}}_{50}$ has been studied as a function of ferromagnet thickness and buffer layer material. Mu-metal exhibits classic exchange bias behavior: the exchange bias (_HEB)$(H_{\mathit{EB}})$ and coercive fields scale inversely with the ferromagnet's thickness, with H_EB varying as the cosine of the in-plane applied field angle. Ta buffers, rather than Cu, allow the mu-metal to retain more of its soft magnetic character while exhibiting exchange bias. The ability to preserve soft ferromagnetic behavior in an exchange biased heterostructure may be useful for low field sensing and other device applications.     

Development of magnetic anisotropies in ultrathin epitaxial films of Fe(001) and Ni(001)

Ultrathin films, bcc Fe(001) on Ag(001), fcc Fe(001) on Cu(001) and Fe/Ni(001) bilayers on Ag, were grown by molecular beam epitaxy. A wide range of surface science tools were employed to establish the quality of epitaxial growth. Ferromagnetic resonance and Brillouin light scattering were used to extract the magnetic properties. Emphasis was placed on the study of magnetic anisotropies. Large uniaxial anisotropies with easy axis perpendicular to the film surface were observed in all ultrathin structures studied. These anisotropies were particularly strong in fcc Fe and bcc Fe films. In sufficiently thin samples the saturation magnetization was oriented perpendicularly to the film surface in the absence of an applied field. It has been demonstrated that in bcc Fe films the uniaxial perpendicular anisotropy originates at the film interfaces. In situ measurements indentified the strength of the uniaxial perpendicular anisotropy constant at the Fe/vacuum, Fe/Ag and Fe/Au interfaces asK _us = 0.96, 0.63, and 0.3 ergs/cm² respectively. The surface anisotropies deduced for [bulk Fe/noble metal] interfaces are in good agreement with the values obtained from ultrathin films. Hence the perpendicular surface ansiotropies originate in the broken symmetry at abrupt interfaces. An observed decrease in the cubic anisotropy in bcc Fe ultrathin films has been explained by the presence of a weak 4th order in-plane surface anisotropy,K _1S=0.012 ergs/cm². Fe/Ni bilayers were also investigated. Ni grew in the pure bcc structure for the first 3–6 ML and then transformed to a new structure which exhibited unique magnetic properties. Transformed ultrathin bilayers possessed large inplane 4th order anisotropies far surpassing those observed in bulk Fe and Ni. The large 4th order anisotropies originate in crystallographic defects formed during the Ni lattice transformation.     

Ferromagnetic order and critical behavior at surfaces of ultrathin epitaxial films

The critical behavior, ferromagnetic order and magnetic anisotropies of ultrathin, epitaxial, magnetic films is studied using electron capture spectroscopy (ECS), which is capable of probing the long-ranged and short-ranged electron spin polarization (ESP) at the topmost surface layer of uncoated and coated magnetic structures. For all systems [Ni(100)/Cu(100), Ni(100)/NaCl(100), fcc Fe(111)/Cu(111), Fe(100)/Ag(100), Tb/Fe(100)/Ag(100), Fe(100)/Au(100), hcp Tb(0001)/W(110), Fe(110)/W(110), V(100)/Ag(100), Pd(100)/Ag(100), Pd/W(110)] investigated so far, ferromagnetic order is detected. It is found that the surface Curie temperatureT _Cs depends on film thicknessd. ECS data obtained at the surface of various systems reveal the existence ofT- andd-dependent magnetic anisotropies. Although for V(100)/Ag(100) the measured critical exponent=0.128 agrees very well with=1/8 predicted for the two-dimensional Ising model, for other systems, such as Fe(100)/Au(100), the measured value (0.25) is in disagreement with theoretical predictions. The experimental results are discussed within the framework of presently available experimental and theoretical data.     

Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films

We have combined neutron scattering and piezoresponse force microscopy to show that the exchange field in CoFeB/BiFeO_{3} heterostructures scales with the inverse of the ferroelectric and antiferromagnetic domain size of the BiFeO3 films, as expected from Malozemoff's model of exchange bias extended to multiferroics. Accordingly, polarized neutron reflectometry reveals the presence of uncompensated spins in the BiFeO3 film at the interface with CoFeB. In view of these results, we discuss possible strategies to switch the magnetization of a ferromagnet by an electric field using BiFeO3.     

Magnetic hyperfine fields in ultrathin Ni films on Cu(100)

The magnetic hyperfine field was measured at ¹¹¹In(¹¹¹Cd) probe atoms in ultrathin Ni films epitaxially grown on Cu(100) utilizing the perturbed -angular correlation (PAC) method. The behaviour of the hyperfine field as a function of temperature was studied for different film thicknesses ranging from 2 up to 10 monolayers. It was found that the strength of the hyperfine fields as well as the critical temperatures are strongly reduced for thin nickel films and approach the bulk value with increasing film thickness. The orientation of the hyperfine field is discussed.     

Analysis of the electronic structure of ultrathin NiO/Ag(100) films

Thin films of nickel oxide on a silver substrate have been extensively studied both experimentally and theoretically. In this paper we present band structure calculations of one, two, three and five layer NiO/Ag(100) systems using a GGA+U density functional method and study the approach of the system towards the bulk situation. We find that the interfacial layer is metallised and that even for a five-layer system, the substrate still affects the properties of the outermost and central layers, suggesting that these layers have not yet reached convergence towards bulk properties. This may affect some of the more sensitive properties of the system.     

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm⁻¹ under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.     

Dependence of exchange bias on the field-cooled remanent magnetic state in Ni/NiO nanogranular samples

The magnitude of the exchange bias (EB) effect in nanogranular Ni/NiO samples (with Ni content between about 4 and 69 wt% and mean size of the Ni crystallites of the order of 10 nm) has been found to be strictly related to the increase in the remanent magnetization measured after field-cooling, with respect to the value after zero-field-cooling, normalized to the saturation magnetization. This allows describing the EB mechanism in terms of the fraction of the magnetic moments of the Ni nanocrystallites that irreversibly has aligned in the field direction during field-cooling, due to the exchange anisotropy, and that is effectively involved in the loop shift. Hence, the possibility of tuning EB by controlling the field-cooled remanent magnetic state is shown.     

Tailoring the exchange bias of Ni/NiO nanogranular samples by the structure control

The exchange bias (EB) effect has been studied in Ni/NiO nanogranular samples obtained by annealing in H₂, at selected temperatures (200≤T_ann≤300 °C), NiO powder previously milled for 5, 10, 20 and 30 h. Both the as-milled NiO powders and the Ni/NiO samples have been analyzed by X-ray diffraction and the exchange bias properties have been investigated in the 5-200 K temperature range. The structure and the composition of the Ni/NiO samples can be satisfactorily controlled during the synthesis procedure by varying both T_ann and the milling time of the precursor NiO powders. In particular, by increasing this last parameter, the mean grain size of the NiO phase reduces down to the final value of 16 nm and the microstrain increases, which is consistent with an enhancement of the structural disorder. The structure of the milled NiO matrix strongly affects the process of nucleation and growth of the Ni nanocrystallites induced by the H₂ treatments, so that, T_ann being equal, the amount and the mean grain size D_Ni of the Ni phase vary substantially in samples having different milling times. Such features of the Ni phase determine the extent of the Ni/NiO interface and consequently the magnitude of the exchange field H_ex: the highest value (∼940 Oe) has been measured at T=5 K in a sample containing ∼7 wt% Ni and with D_Ni=19 nm. However, in Ni/NiO samples with very different structural characteristics and different values of H_ex at T=5 K, the EB effect vanishes at the same temperature (∼200 K) and the same thermal dependence of H_ex is observed. We consider that the evolution of the EB effect with temperature is ultimately determined by the microstructure of the Ni/NiO interface, which cannot be substantially modified by changing the synthesis parameters, milling time and T_ann.