Polar discontinuity doping of the LaVO_{3}/SrTiO_{3} interface

We have investigated the transport properties of LaVO_{3}/SrTiO_{3} Mott-insulator-band-insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_{2}/LaO/TiO_{2} polar discontinuity is conducting, exhibiting a LaVO3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_{2}/SrO/TiO_{2} interface, formed by inserting a single layer of bulk metallic SrVO3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions.     

Pockels effect in short period silicon germanium superlattices

We introduce a simple method of calculating Pockels coefficients in ordered SiGe superlattices and show that the Pockels effect in them can be half as strong as in GaAs, thereby opening a path to efficient CMOS-compatible electro-optic modulators.     

Precision Measurement of {\mu G_{E}^{p}/G_{M}^p} at Low Q 2

Precision measurements are presented of the proton electric to magnetic form-factors ratios at Q ²?=?0.3 ? 0.8 (GeV/c)², obtained by polarization-transfer in Hall A of the Jefferson Laboratory. The measured ratios are significantly lower than published values. New global fits to the individual form factors indicate a lower electric form factor and a slightly higher magnetic form factor. The proton charge radius extracted from the new results is somewhat smaller but consistent with previous values obtained from electron?Cproton scattering, and is in significant disagreement with the recent value obtained from muonic hydrogen. The effects of the new results on other quantities are briefly discussed.     

Magnetoelectric effect in an XY-like spin glass system Ni{x}Mn{1-x}TiO{3}

Magnetoelectric (ME) properties were investigated for an XY-like spin glass (SG) system, Ni{x}Mn{1-x}TiO{3} with an ilmenite structure. The ME effect is usually observed in systems with peculiar couplings between a crystal lattice and a magnetic order. Nonetheless, we found an antisymmetric ME effect with nonzero ME tensor elements below T{ME}=8-10 K in samples showing SG transitions. At T{ME}, no specific heat anomaly was observed, suggesting the absence of long-range magnetic order. We discuss the origin of the ME effect in the XY-like SG system in terms of an alignment of toroidal moments.     

Fabrication and photoresponse of n-$$\hbox {WS}_{2}/$$p-V$$_{0.25}$$0.25W$$_{0.75}$$0.75Se$$_{2}$$2 van der Waals heterojunction

Excitation functions for \(\alpha \)-induced reactions on natural vanadium were measured in the energy range up to 20 MeV. The stacked-foil activation technique was used. The experimental results were compared with the theoretical calculations using EMPIRE-3.1, EMPIRE-3.2.2 and TENDL 2015, and with earlier experimental results. Thick target yields were calculated for the production of \(^{54}\hbox {Mn}\) and for the associated impurity \(^{52}\hbox {Mn}\).     

Electric gating of the multichannel conduction in LaAlO_3/SrTiO_3 superlattices

The electric gating on the transport properties of two-dimensional electron gas(2DEG) at the interface of LaAlO₃/SrTiO₃(LAO/STO) heterostructure has attracted great research interest due to its potential application in fieldeffect devices. Most of previous works of gate effect were focused on the LAO/STO heterostructure containing only one conductive interface. Here, we systematically investigated the gate effect on high-quality LAO/STO superlattices(SLs)fabricated on the TiO₂-terminated(001) STO substrates. In addition to the good metallicity of all SLs, we found that there are two types of charge carriers, the majority carriers and the minority carriers, coexisting in the SLs. The sheet resistance of the SLs with a fixed thickness of the LAO layer increases monotonically as the thickness of the STO layer increases. This is derived from the dependence of the minority carrier density on the thickness of STO. Unlike the LAO/STO heterostructure in which minority and majority carriers are simultaneously modulated by the gate effect, the minority carriers in the SLs can be tuned more significantly by the electric gating while the density of majority carriers is almost invariable. Thus, we consider that the minority carriers may mainly exist in the first interface near the STO substrate that is more sensitive to the back-gate voltage, and the majority carriers exist in the post-deposited STO layers. The SL structure provides the space separation for the multichannel conduction in the 2 DEG, which opens an avenue for the design of field-effect devices based on LAO/STO heterostructure.     

Electrical property effect of oxygen vacancies in the heterojunction of LaGaO_3/SrTiO_3

Density functional theory within the local density approximation is used to investigate the effect of the oxygen vacancy on the LaGaO_3/SrTiO_3(001) heterojunction. It is found that the energy favorable configuration is the oxygen vacancy located at the 3~(rd) layer of the STO substrate, and the antiferrodistortive distortion is induced by the oxygen vacancy introduced on the SrTiO_3 side. Compared with the heterojunction without introducing oxygen vacancy, the heterojunction with introducing the oxygen vacancy does not change the origin of the two-dimensional electron gas(2DEG), that is, the 2DEG still originates from the d_(xy) electrons, which are split from the t~(2g) states of Ti atom at interface; however the oxygen vacancy is not beneficial to the confinement of the 2DEG. The extra electrons caused by the oxygen vacancy dominantly occupy the 3d_(x~2-y~2) orbitals of the Ti atom nearest to the oxygen vacancy, thus the density of carrier is enhanced by one order of magnitude due to the introduction of oxygen vacancy compared with the density of the ideal structure heterojunction.     

Effects of BaTiO_3 and SrTiO_3 as the buffer layers of epitaxial BiFeO_3 thin films

BiFeO_3 (BFO) thin films with BaTiO_3 (BTO) or SrTiO_3 (STO) as buffer layer were epitaxially grown on SrRuO_3-covered SrTiO_3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.     

Passively Q-switched laser performance of a composite Nd:YVO_{4}/Nd:YVO_{4}/Nd:YVO_{4} crystal with GaAs saturable absorber

By using GaAs wafer as the saturable absorber, the laser-diode pumped passively Q-switched composite Nd:YVO \(_{4}\) laser has been successfully demonstrated. For this passively Q-switched operation, the average output power obtained is as high as 846 mW at the incident pump power of 5.31 W, while the pulse duration is as short as 14.5 ns. The largest single-pulse energy of 2.49 \(\upmu \) J and the highest peak power of 166 W are obtained. The GaAs saturable absorber with thickness of 400 \(\upmu \) m has shown more excellent laser performance comparing with 700 \(\upmu \) m thick GaAs.     

Enhanced sensitivity to the time variation of the fine-structure constant and m{p}/m{e} in diatomic molecules

Sensitivity to temporal variation of the fundamental constants may be strongly enhanced in transitions between narrow close levels of different nature. This enhancement may be realized in a large number of molecules due to cancellation between the ground state fine-structure omega{f} and vibrational interval omega{v} [omega=omega{f}-nomega{v} approximately 0, delta omega/omega=K(2delta alpha/alpha+0.5 delta mu/mu), K>1, mu=m{p}/m{e}]. The intervals between the levels are conveniently located in microwave frequency range and the level widths are very small. Required accuracy of the shift measurements is about 0.01-1 Hz. As examples, we consider molecules Cl(+)(2), CuS, IrC, SiBr, and HfF(+).     

Structural, morphological and optical properties of \hbox {In}_{2}\hbox {S}_{3} thin films obtained by SILAR method

$\hbox {In}_{2}\hbox {S}_{3}$ thin films have been elaborated onto glass substrate by SILAR method at room temperature using different immersion time in the solution of cation and anion and fixing the rinsing time. The film composition, morphology and structure were investigated using energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and X-ray diffraction techniques. Optical properties, such transmission and band gap have been also analyzed. The effects of annealing on the morphological structure thin films are also described. The x-rays diffraction spectra indicated that the formed compounds are $\upbeta $ - $\hbox {In}_{2}\hbox {S}_{3}$ polycrystalline thin films with $\hbox {In}_{6}\hbox {S}_{7 }$ as second phase in sample S1 and sample S2 and no another phase in sample 3. SEM revealed homogeneous and relatively uniform films and EDAX shows sample 3 with S/In=1.44. For sample 1 and sample 2, we noted an increase of band gap when rinsing time increases.     

Characterization of the current-induced resistive spots in superconducting \hbox {YBa}_{2} \hbox {Cu}_{3} \hbox {O}_{7} strips

For over a decade, ultrathin superconducting films have been developed for the detection of single photons at optical or near infrared frequencies, with competitive performances in terms of quantum efficiency, speed, and low dark count rate. In order to avoid the requirement of helium refrigeration, we consider here the use of high temperature materials, known to achieve very fast responsiveness to laser irradiation. We excite thin filaments of the cuprate \(\hbox {YBa}_{2} \hbox {Cu}_{3} \hbox {O}_{7}\) by rectangular pulses of supercritical current so as to produce either a phase-slip centre (PSC) or a normal hot spot (HS), according to the temperature and the current amplitude selected. That procedure provides information about the maximum bias current to be used in a particle detector, about the return current back to the quiescent state after excitation, and about the rate of growth and decay of a HS. We also measure the time of PSC nucleation. A unique feature of that approach is to provide the rate of heat transfer between the film and its substrate at whatever temperature, in the superconducting state, in the practical conditions of operation.     

Time-resolved photoelectron spectroscopy of $\mathrm{Al}_{3}\mathrm{O}_{3}^{-}$: photoisomerization versus photofragmentation

In general, clusters are unstable and in many cases several metastable isomers exist even at low temperature. Therefore, a cluster may react with a dramatic geometry change to a small disturbance such as a weak field or to the absorption of a low-energy photon. Here, we study the response of Al₃O₃^-\mathrm{Al}_{3}\mathrm{O}_{3}^{-} to photoexcitation using time-resolved photoelectron spectroscopy. Earlier experimental and theoretical studies suggested that this cluster anion undergoes a geometry change after photoexcitation. In contrast, our time-resolved spectra indicate that photoexcitation triggers ultra-fast fragmentation. This example demonstrates that ultra-fast processes in clusters are not well understood and that it is still difficult to gain reliable experimental data about such processes.     

A novel Sr_{3}Pb_{6}Ce_{2}Ti_{12}O_{36} ferroelectric thin film grown by pulsed laser ablation

Complex perovskite oxide ferroelectric thin films are of great technological interest because of their high dielectric constant and large tunability. In this paper, we report the structural and electrical properties of Sr \(_{3}\) Pb \(_{6}\) Ce \(_{2}\) Ti \(_{12}\) O \(_{36}\) (SPCTO) thin films grown by pulsed laser deposition. The role of oxygen pressure and substrate temperature on the microstructure, dielectric properties and leakage current mechanism of SPCTO thin films was investigated. Strong oxygen partial pressure dependence on the microcrystalline properties and leakage current conduction mechanism was observed. Both Raman spectra and C-V characteristics show a ferroelectric phase rather than paraelectric phase for the deposited thin films. Investigations on the leakage current showed that SPCTO thin films deposited at different oxygen pressure have different dominant conduction mechanism at various electric fields. The low field conduction mechanism is governed by Ohmic and space charge limited conduction mechanisms, whereas at high fields, the conduction process is dominated by Schottky emission mechanism. The dielectric constant as well as the tunability is found to increase with increase in the crystallite size.     

Magnetotransport properties in \text{ Ni }_{81}\text{ Fe }_{19}\text{/Zr } multi-layers

In this work, we present a study of the magneto transport properties in magnetic multilayered structure $\text{ Ni }_{81}\text{ Fe }_{19}\text{/Zr }$ Ni 81 Fe 19 /Zr . The magnetic $(\text{ Ni }_{81}\text{ Fe }_{19})$ ( Ni 81 Fe 19 ) and non magnetic (Zr) layer thickness $(\mathbf{t}_\mathbf{NiFe}, \mathbf{t}_\mathbf{zr})$ ( t NiFe , t zr ) effects on the magneto resistance (MR) are discussed theoretically in the framework of the Johnson–Camley semi classical approach based on the Boltzmann transport equation. A comparison between calculated and measured MR is obtained. The observed MR ratio oscillates for Zr layer thickness with an average period of 7Å. A generally weak $\text{ MR }(\text{ t }_{\mathrm{NiFe}})$ MR ( t NiFe ) ratio for fixed $\mathbf{t}_\mathbf{zr}$ t zr is obtained and it shows a maxima peak of the MR with a value of 1.8 % located at $\mathbf{t}_\mathbf{NiFe}= 80$ t NiFe = 80 Å.     

Superconductivity in the doped topological insulator Cu{x}Bi{2}Se{3} under high pressure

We report a high-pressure single crystal study of the topological superconductor Cu{x}Bi{2}Se{3}. Resistivity measurements under pressure show superconductivity is depressed smoothly. At the same time the metallic behavior is gradually lost. The upper-critical field data B{c2}(T) under pressure collapse onto a universal curve. The absence of Pauli limiting and the comparison of B{c2}(T) to a polar-state function point to spin-triplet superconductivity, but an anisotropic spin-singlet state cannot be discarded completely.     

Superfluid density in a highly underdoped YBa_{2}Cu_{3}O_{6+y} superconductor

The superfluid density rho_{s}(T) identical with1/lambda;{2}(T) has been measured at 2.64 GHz in highly underdoped YBa_{2}Cu_{3}O_{6+y}, at 37 dopings with T_{c} between 3 and 17 K. Within limits set by the transition width DeltaT_{c} approximately 0.4 K, rho_{s}(T) shows no evidence of critical fluctuations as T-->T_{c}, with a mean-field-like transition and no indication of vortex unbinding. Instead, we propose that rho_{s} displays the behavior expected for a quantum phase transition in the (3+1)-dimensional XY universality class, with rho_{s0} proportional, variant(p-p_{c}), T_{c} proportional, variant(p-p_{c});{1/2}, and rho_{s}(T) proportional, variant(T_{c}-T);{1} as T-->T_{c}.