远红外全角度光子晶体反射镜的鲁棒性分析

鉴于在制备过程中存在介质层的随机扰动,计算并分析了远红外全角度光子晶体反射镜厚度和折射率的鲁棒性。结果表明,不论是厚度还是折射率的随机扰动,当随机度小于0.05时,全反射镜带隙变化不大;当随机度大于0.1时,随着厚度和折射率的随机扰动逐渐增大,反射镜的全向带隙和带隙率都逐渐减小。当随机度达到0.5时,光子晶体的全向带隙完全消失。本文的研究对远红外全角度光子晶体反射镜的设计和制备提供了有价值的参考。     

化学还原法向二氧化硅人工欧泊中填充Se

本文提出了一种新的调节人工欧泊晶体的光学带隙的方法.采用改进的溶剂蒸发法将单分散SiO2微球组装成在红外光区具有光子带隙的人工欧泊,采用化学还原法向欧泊中填充高折射率材料Se,改变其光学带隙特性.采用扫描电子显微镜(SEM)、X射线衍射和可见-近红外光谱仪(VIS-NIR)等对Se-SiO2三维光子晶体的形貌、结构和光学性能进行了观察测试.研究结果表明Se以纳米晶粒的形式均匀地包覆在SiO2微球表面,与相同晶格周期的SiO2光子晶体相比,Se-SiO2光子晶体的带隙发生明显的红移.     

基于负折射率材料一维光子晶体可调节的频率和方向滤波器

为实现可调节的频率和方向滤波器,设计基于负折射率材料含空气层缺陷的一维光子晶体.用特征矩阵的方法研究电磁波在此种结构中的透射系数.研究发现在零平均折射率带隙内存在缺陷模,在正入射条件下缺陷模位置通过改变空气层厚度来调节.对在零平均折射率带隙内某个频率的电磁波,有某个特定方向让其透射,该方向也可以通过改变空气层厚度来调节.研究结果为设计可调节的频率和方向滤波器提供了理论依据.     

光子晶体中掺杂激活杂质的光增益研究

本文借助光子晶体中二能级原子的自发辐射理论说明缺陷态局域场存在的必然性以及局域场基本性质,为研究掺杂自发辐射的内在规律提供了理论依据,在此基础上,将自发辐射理论与数值模拟相结合,在缺陷介质中掺入和未掺入激活杂质时,数值模拟研究一维光子晶体的掺杂局域场特征以及受激辐射增强和透射率大于1现象与光子带隙边缘群速度异常和掺杂层复有效折射率负的虚部之间的内在规律,由此说明如在光子晶体的缺陷介质中掺入激活杂质,复有效折射率具有负的虚部,光子禁带中会出现品质因子非常高的杂质态,具有很大的态密度,这样便可实现自发辐射的增强,出现较强的受激辐射放大,在带隙的边缘处,光子晶体的群速度较小或群速度异常,受激辐射放大最容易出现在靠近光子带隙的边缘。     

一种基于光子晶体的雾霾检测仪的设计

为设计雾霾检测仪,由Si和LiF介质组成了一含缺陷层的光子晶体.在考虑两介质色散关系的基础上,利用传输矩阵法对其透射特性进行了研究.计算表明,此光子晶体在580 ～ 720 nm的范围内出现了一个透射率为1的缺陷模,此缺陷模有如下特征:缺陷层中折射率变化时,不影响缺陷模的透射率,只改变缺陷模的中心位置,且缺陷模的中心波长与缺陷层中的折射率有线性关系.两介质几何厚度分别增加时,缺陷模的透射率不变,但其中心位置红移.缺陷层的几何厚度单独变化时,仅影响缺陷模的中心位置,几何厚度增加,缺陷模中心红移,且移动率一定.缺陷模的以上特征为利用此类光子晶体设计雾霾检测仪提供了有益的指导.     

一维光子晶体结构参数的随机扰动对其光学特性的影响

用特征矩阵法研究结构参数存在随机扰动的情况下一维光子晶体的光学特性, 无论是加工过程中介质层几何厚度的误差, 还是介质层折射率的随机波动都会影响一维光子晶体的光学特性.随机扰动对一维光子晶体带结构高频部分影响较大, 造成带结构消失, 甚至全部变成禁带; 随机扰动对光子晶体缺陷模式的影响是使缺陷模的位置发生随机平移, 平移的程度与随机度有关, 介质层折射率的随机变化要比介质层厚度的随机变化对缺陷模位置的影响要大; 周期数目的增加可以部分地减小缺陷模的平移, 但同时会使缺陷模透射率减小,增加缺陷层厚度可以有效降低随机扰动对光子晶体缺陷模式的影响. 本文的研究将对一维光子晶体的设计工作提供有价值的参考.     

多孔氧化铝/氧化锌组装体的光子带隙和发光性能

从光子晶体的角度研究了AAO/ZnO组装体的光子带隙和发光性能,并解释了该组装体中ZnO发光增强的原因.利用平面波法对AAO及AAO/ZnO组装体的带隙结构进行了研究,得到了该组装体在可见光范围内TE波和TM波的不同的禁带结构特征,讨论了晶格常数、填充比及填充介质的介电常数对带隙结构和禁戒波长的影响,找到了使AAO/ZnO组装体产生与ZnO的缺陷发光峰匹配的完全光子禁带的条件.     

填充比对三角晶格等离子体光子晶体色散关系的影响

采用有限单元法,分别对TE模式、TM模式下三角晶格等离子体光子晶体的色散关系进行了理论计算,分析了等离子体填充比对能带位置和禁带宽度的影响.结果 表明:TM模式下等离子体光子晶体在M-F、X-M两个方向上存在不完全带隙,随填充比的增加,带隙位置向高频移动,禁带宽度增大直至达到一稳定值.TE模式下等离子体光子晶体不仅存在禁带结构,还在低频处形成了表面等离子体波的平带结构.随填充比的增大,TE模式等离子体光子晶体由X-M单一方向的不完全带隙形成了完全带隙,带隙宽度随填充比的增大而增大.本文提供了一种可调谐等离子体光子晶体的有效方法,有望应用于微波、THz波的可调性控制.     

掺杂光子晶体光纤的缺陷模增益谱与光孤子拉曼放大研究

本文研究在层状结构光子晶体光纤中引入多个缺陷区,制作出多芯的光子晶体光纤,在光子晶体光纤中增加的多个线缺陷形成波分复用技术的多个传输信道,在此基础上数值模拟研究在缺陷介质中掺入和未掺入激活杂质,光子晶体光纤的掺杂局域场特征以及受激辐射增强和透射率大于1现象与光子带隙内群速度异常和掺杂层复有效折射率负的虚部之间的内在规律,进一步研究发现在光子晶体光纤的各个线缺陷中掺入拉曼增益介质,得到光子晶体光纤拉曼放大规律.由于光子晶体光纤的各个信道间存在带隙,使得信道间信号串扰必然受到抑制,利用这些特性可以设计分布式高增益、极低噪声、宽带和有利于光集成的新型光子晶体光纤拉曼放大器,将它用于密集波分复用(DWDM)光通信系统.     

h-BN型超晶格等离子体光子晶体能带特性研究

六方氮化硼(h-BN)晶格结构是一种类六方对称复式超晶格结构。具有h-BN晶格构型的光子晶体以其宽光子带隙特点受到国内外学者的广泛关注。本文利用不同尺度低压气体放电管与Al₂O₃介质棒周期性排列,构建了新型h-BN型超晶格等离子体光子晶体,实现其空间结构和等离子体参数的动态调控。利用微波透射谱对比研究了h-BN型超晶格与简单三角晶格等离子体光子晶体禁带位置、宽度和数目。分析了放电电流、介质棒阵列数对不同频段光子带隙的影响,以及电磁波入射角度对电磁传输特性的影响。结果表明：等离子体的引入不仅能够形成新的光子带隙,而且可以选择性地使部分禁带位置发生移动;相对于简单三角晶格,h-BN型超晶格等离子体光子晶体呈现出更多光子带隙;Al₂O₃介质棒阵列数对等离子体光子晶体禁带位置、宽度和数目均具有重要影响。电磁波入射角度变化越大,电磁传输特性差别越显著,透射谱相关性越差。本文所设计的新型h-BN型超晶格等离子体光子晶体为制作可调谐光子晶体提供了新的思路,在微波和太赫兹波控制领域具有潜在应用价值。     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.