Possible origin of ferromagnetism in un-doped ZnO: First-principles calculations

We performed first-principles calculations to investigate the electronic structures and magnetic properties of neutral and charged intrinsic defects of wurtzite ZnO. Our results show that an isolated single charged Zn vacancy can introduce a magnetic moment of 1.00μB, and may be responsible for the unexpected ferromagnetism in the system.     

氧化锌中中性氮杂质第一性原理研究

以第一性原理计算为基础,研究了氧化锌中中性氮杂质的原子和电子结构、缺陷形成能等．根据计算结果,氮杂质为深受主,因此对氧化锌的p型导电性没有贡献．在各种中性氮杂质中,替代氧位的氮有最低的形成能和最浅的受主能级,在富氧条件下替代锌位的氮的形成能次之．氮间隙在四面体位置不稳定,会自动弛豫到kick-out结构．尽管氮可能会占据八面体间隙位置,但由于形成能过高因此其浓度会较低．同时还讨论了各种掺杂情形下的电荷密度分布,得到了自洽的结果.     

First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms

Using first-principles density-functional calculations, we have studied the structural and electronic properties of ultrathin ZnO {0001} nanofilms. The structural parameters, the charge densities, band structures and density of states have been investigated. The results show that there are remarkable charge transfers from Zn to O atoms in the ZnO nanofilms. All the ZnO nanofilms exhibit direct wide band gaps compared with bulk counterpart, and the gap decreases with increased thickness of the nanofilms. The decreased band gap is associated with the weaker ionic bonding within layers and the less localization of electrons in thicker films. A staircase-like density of states occurs at the bottom of conduction band, indicating the two-dimensional quantum effects in ZnO nanofilms.     

镓掺杂氧化锌和硫化锌电子结构差异的第一性原理

运用第一性原理进行了相关计算研究Ga掺杂的ZnO和ZnS的电子结构的差异. 结果表明,LDA和LDA+U计算的结果在定性上是一致的. 掺杂Ga以后,ZnO和ZnS的费米能级处均出现杂质态. 掺杂中的ZnO,杂质态在导带是离域的. 掺杂后的ZnS,虽然p态比较离域,但其s态在费米能级处却是局域的. 前线轨道的电荷密度分布也给出了相同的信息. 交换ZnO和ZnS的晶格结构,结果不变. 局域化的Ga-s态是导致掺杂ZnS电学性能差的原因.     

Aluminum and nitrogen impurities in Wurtzite ZnO: first-principles studies

First-principles calculations have been performed to investigate the doping behaviors of Al and N dopant impurities in ZnO. According to the results, in the Al mono-doping case, the impurity states are quite delocalized, the corresponding effective masses are small, and the formation energy is as low as −9.71 eV. In the N mono-doping case, the impurity states are localized, the effective masses are large, and the formation energy is high (4.55 eV in the most favorable extreme O-rich conditions). In the Al-N codoping case, the corresponding effective masses are marked decreased compared to the N mono-doping situations, and the formation energy of the N-Al-N system is as low as −2.54 eV in the O-rich condition. The above results can explain the electrical behaviors of the doped or codoped ZnO systems observed in experiments.     

分子团簇表面吸附敏化ZnO纳米线的第一性原理研究

ZnO纳米线作为新型太阳能电池结构的重要组成部件之一, 其导电能力直接影响到太阳能电池的性能. 采用密度泛函理论平面波超软赝势方法, 计算并分析了C₂H₆O(乙醇)、 C₆H₅FS(4-氟苯硫酚)、 C₇HF₇S(4-(三氟甲基L)-2, 3, 5, 6-四氟硫代苯酚) 等小分子吸附的六边形结构\langle0001angle ZNWs (ZnO 纳米线) 的几何结构、 吸附能和电子结构. 首先, 通过几何优化得到了不同基团吸附的ZNWs的稳定结构, 同时吸附能计算结果表明C₇HF₇S吸附的体系结构最为稳定, 且吸附呈现放热反应; 其次, 为研究表面敏化对导电性能的影响, 计算了不同小分子基团吸附下的能带结构和态密度, 并利用能带理论分析了表面吸附敏化对禁带宽度的调控机理, 结果分析表明小分子表面吸附敏化对ZNWs的电学性能有一定的影响, 其中C₇H₇FS和C₆H₅FS分子均发生了不同程度的电荷转移.     

The influence of nitrogen vacancies on the magnetic and electronic properties of ruthenium mononitride: First-principles study

We present FLAPW-GGA calculations of the magnetic and electronic properties of cubic RuN_x (x=1.0, 0.75 and 0.50). We find that RuN exhibits a ferromagnetic ground state and the local ruthenium magnetic moment abruptly decreases with nitrogen vacancies. The relative positions of t_2g and e_g states and the Ru 4d–N 2p hybridization in RuN_x are discussed. We have also found that the magnetic behavior for RuN_x vs. FeN_x as dependent on the nitrogen vacancies content displays an opposite trend.     

First-principles study on electronic and optical properties of S,N single-doped and S-N co-doped ZnO

The electronic and optical properties of undoped, N single-doped, S single-doped, and S-N co-doped ZnO were systematically investigated by first-principles calculations. The lattice parameters of S single-doped and S-N co-doped ZnO clearly increased. After N-doping, a strongly localized impurity energy level of N was formed near the Fermi level at the top of valence band (VB). In S-N co-doped ZnO, the localization of N weakened, and the Fermi level went deeper into the VB, indicating that the acceptor energy level of N formed in S-N co-doped system became shallower due to the effect of 3p state of S. Therefore, S-N co-doping is beneficial to obtain p-type ZnO with a higher hole concentration than N single-doping. Compared with undoped ZnO, the static dielectric constant, absorption coefficient, refractive index, energy loss function, and reflectivity of N single-doped, S single-doped, and S-N co-doped ZnO exhibited an increase in low-energy area.     

First-principles study of the effect of heavy Ni doping on the electronic structure and absorption spectrum of wurtzite ZnO

The band structures, densities of states and absorption spectra of pure ZnO and two heavily Ni doped supercells of Zn_0.9722Ni_0.0278O and Zn_0.9583Ni_0.0417O have been investigated using the first-principles plane-wave ultrasoft pseudopotential method based on the density functional theory. The calculated results showed that the band gap is narrowed by Ni doping in ZnO; this, is because the conduction band undergoes a greater shift toward the low-energy region than the valence band and because heavier doping concentrations lead to, narrower band gaps. Moreover, the optical absorption edge exhibits a redshift due to the narrowing of the band gap. Heavier doping concentrations leads to more significant redshifts, which is in agreement with the experimental results.     

掺杂硅烯吸附CO分子的第一性原理研究

硅烯具有独特的电子、光学、热学、力学以及量子特性,在电子器件、电极材料、储氢材料、催化剂和气体传感器等领域有巨大的潜在应用价值.本文采用基于密度泛函理论的第一性原理计算方法,利用Materials Studio软件中的CASTEP程序包对硅烯与CO分子之间的吸附行为进行了研究.重点研究了硅烯掺杂方式、CO分子吸附构型及硅烯空位缺陷浓度对CO分子吸附的影响,研究结果表明：1)空位缺陷硅烯对CO分子的吸附能力最强;2)碳原子垂直朝向空位缺陷硅烯更有利于CO分子的吸附;3)硅烯对CO分子的吸附能力随其空位浓度的增加显著增强;4)空位硅烯向CO分子转移电荷,电荷转移量与二者的吸附作用强弱呈正相关.该研究可为硅烯基CO气体传感器的设计提供理论指导.     

第一性原理研究Te-N共掺p型ZnO

采用基于密度泛函理论的第一性原理赝势法对Te-N共掺杂ZnO体系的晶格结构、 杂质态密度和电子结构进行了理论分析.研究表明, N掺杂引起晶格收缩,而Te的掺入引起晶格膨胀, 从而减小晶格应力促进N的掺杂,并且Te由于电负性小于O而带正电, Te在ZnO中作为等电子施主而存在.研究发现, N掺杂体系中在费米能级附件形成窄的深受主能级, 而Te-N共掺体系中, N杂质带变宽,空穴更加离域,同时,空穴有效质量变小,受主能级变浅, 更有利于实现p型特性.因此, Te-N共掺有望成为一种更为有效的p型掺杂手段.     

Ag-N共掺p型ZnO的第一性原理研究

采用基于密度泛函理论的第一性原理赝势法对Ag-N共掺杂ZnO体 系以及间隙N和间隙H掺杂p型ZnO: (Ag, N)体系的缺陷形成能和离化能进行了研究. 结果表明, 在Ag_Zn和N_O所形成的众多受主复合体中, Ag_Zn-N_O受主对不仅具有较低的缺陷形成能同时其离化能也相对较小, 因此, Ag_Zn-N_O受主对的形成是Ag-N共掺ZnO体系实现p型导电的主要原因. 研究发现, 当ZnO: (Ag, N)体系有额外间隙N原子存在时, Ag_Zn-N_O受主对容易与N_i形成Ag_Zn-(N₂)_{m O}施主型缺陷, 该施主缺陷的形成降低了Ag-N共掺ZnO的掺杂效率因而不利于p型导电. 当间隙H引入到ZnO: (Ag, N)体系时, H_i易与Ag_Zn-N_O受主对形成 受主-施主-受主复合结构(Ag_Zn-H_i-N_O), 此复合体的形成不仅提高了Ag_Zn-N_O受主对在ZnO中的固溶度, 同时还能使其受主能级变得更浅而有利于p型导电. 因此, H辅助Ag-N共掺ZnO可能是一种有效的p型掺杂手段. 关键词： p型ZnO 缺陷形成能 受主离化能 第一性原理     

Fabrication of p-type Li-doped ZnO films by pulsed laser deposition

p-Type ZnO thin films have been realized via doping Li as acceptor by using pulsed laser deposition. In our experiment, Li₂CO₃ was used as Li precursor, and the growth temperature was varied from 400 to 600 °C in pure O₂ ambient. The Li-doped ZnO film prepared at 450 °C possessed the lowest resistivity of 34 Ω cm with a Hall mobility of 0.134 cm² V⁻¹ s⁻¹ and hole concentration of 1.37 × 10¹⁸ cm⁻³. X-ray diffraction (XRD) measurements showed that the Li-doped ZnO films grown at different substrate temperatures were of completely (0 0 2)-preferred orientation.     

First-principles study of ferromagnetism in Ti-doped ZnO with oxygen vacancy

Using first-principles density functional calculations, we have investigated the electronic structures of Ti-doped ZnO (Ti is in 4+ oxidation state) with and without oxygen vacancy. The ferromagnetic property is identified in the presence of oxygen vacancy despite Ti being nonmagnetic in its natural phase. The ferromagnetism originates from the charge transferring from donor derived-defect band to unoccupied Ti-3d states and the hybridization between Ti-3d and O-2p band near the Fermi level. On increasing the oxygen vacancy concentration, a transition from a long-ranged magnetic order to a short-ranged interaction is found and the oxygen vacancies prefer to distribute non-uniformly in Ti-doped ZnO.     

Li,N双受主共掺杂实现p型ZnO的第一性原理研究

基于密度泛函理论,采用第一性原理平面波超软赝势法,首先对六方纤锌矿结构的ZnO晶体和N,Li分别掺杂ZnO以及Li-N共掺杂ZnO晶体的几何结构分别进行了优化计算,在此基础上计算得到了未掺杂ZnO晶体和不同掺杂情况下ZnO晶体的能带结构、总体态密度、分波态密度和电荷布居数.利用计算的结果,从理论上分析了Li-N共掺杂ZnO更容易得到稳定的p型ZnO. 关键词： ZnO 电子结构 第一性原理 p型共掺杂     

Cd掺杂纤锌矿ZnO电子结构的第一性原理研究

采用密度泛函理论结合投影缀加波方法,对掺杂Cd导致ZnO禁带宽度下降的机理进行了研究. 通过对掺杂前后电子能带结构,态密度以及分态密度的计算和比较,发现Cd_xZn_1-xO价带顶端(VBM)始终由O-2p占据;而导带顶端(CBM)则由Cd-5s与Zn-4s杂化轨道控制. 随着掺杂浓度的增加,决定带隙宽度的CBM的位置下降,同时VBM的位置上升,从而导致了带隙的变窄,出现了红移现象. 此外,Cd掺杂会使晶胞发生膨胀,这种张应变也是导致Cd 关键词： 密度泛函理论 电子结构 Cd掺杂ZnO     

Cd掺杂纤锌矿ZnO电子结构的第一性原理研究

采用密度泛函理论结合投影缀加波方法，对掺杂Cd导致ZnO禁带宽度下降的机理进行了研究. 通过对掺杂前后电子能带结构，态密度以及分态密度的计算和比较，发现Cd_xZn_1-xO价带顶端(VBM)始终由O-2p占据；而导带顶端(CBM)则由Cd-5s与Zn-4s杂化轨道控制. 随着掺杂浓度的增加，决定带隙宽度的CBM的位置下降，同时VBM的位置上升，从而导致了带隙的变窄，出现了红移现象. 此外，Cd掺杂会使晶胞发生膨胀，这种张应变也是导致Cd     

In掺杂ZnO电子结构的第一性原理研究

采用第一性原理平面波超软赝势,计算了纤锌矿ZnO和不同掺杂量下In掺杂ZnO晶体的能带结构、态密度和分波态密度.计算表明,In的掺杂导致ZnO禁带宽度变窄.随着掺杂量的增大,In_xZn_1－xO的导带底和价带顶同时下降,但是导带底比价带顶下降得多,这导致了带隙的变窄.此外,In掺杂使晶胞晶格常数增大,这对带隙的变窄也有一定作用.     

气相钌原子与氮分子作用机理计算研究

运用B3LYP/6-311+G*(LANL2DZ)详细地研究了Ru原子与N_2分子相互作用的单端位直线型L-Ru N_2和单侧双配位S-Ru N_2及插入化合物NRu N弯曲型和直线型的不同自旋多重度下多个电子态的平衡几何结构、电子结构、轨道布居和振动光谱等性质,同时对构型转化和插入反应过渡态及反应的势能曲线进行了计算.结果表明两种构型的复合物中一般低能态Ru对N_2的活化都不大,直线型的3Δ和3∑-相对基态反应物是能稳定存在的,轨道作用机制是σ/π授予与反馈.化合物NRu N与实验对照,13B1和11A1态可能是实验所观察的,两种构型中众多电子态相对于Ru(a~5F)+2N(~4S)是稳定的.势能曲线体现插入反应能垒很高,生成NRu N化合物在热力学和动力学上都是不利的.     

气相钌原子与氮分子作用机理计算研究

运用B3LYP/6-311+G*(LANL2DZ)详细地研究了Ru原子与N2分子相互作用的单端位直线型L-RuN2和单侧双配位S-RuN2及插入化合物NRuN弯曲型和直线型的不同自旋多重度下多个电子态的平衡几何结构、电子结构、轨道布居和振动光谱等性质,同时对构型转化和插入反应过渡态及反应的势能曲线进行了计算. 结果表明两种构型的复合物中一般低能态Ru对N2的活化都不大,直线型的3和3-相对基态反应物是能稳定存在的,轨道作用机制是授予与反馈. 化合物NRuN与实验对照,13B1和11A1态可能是实验所观察的,两种构型中众多电子态相对于Ru(a5F)+2N(4S)是稳定的. 势能曲线体现插入反应能垒很高,生成NRuN化合物在热力学和动力学上都是不利的.