A model for LED spectra at different drive currents

A mathematical model for the spectra of monocolor light-emitting diodes （LEDs） and phosphor-coated white LEDs at different drive currents is established.The simulation program of the color rendering of a white light LED cluster is developed based on this model.The program can predict not only the spectral power distribution and color rendering index （CRI）,but also the number of LEDs,drive currents,input power,and luminous efficacy of a white light LED cluster at a given color temperature according to the requirement of the luminous flux.The experimental results show that the relative spectral power distributions （SPDs） and chromaticity coordinates of the model LED are very close to that of the real LED at different drive currents.Moreover,the correlated color temperature （CCT）,CRI,special color rendering index （R9） luminous flux,input power,and luminous efficacy of the white light LED cluster predicted by simulation are also very close to the measured values.Furthermore,a white/red cluster with high rendering （CCT=2903 K,CRI=91.3,R9=85） and a color temperature tunable warm-white/red/green/blule LED cluster with high rendering （CCT=2700 6500 K,CRI 〉 90,R9 〉 96） are created.     

ZnO nanorods–polymer hybrid white light emitting diode grown on a disposable paper substrate

We demonstrate intrinsic white light emission from hybrid light emitting diodes fabricated using an inorganic–organic hybrid junction grown at 50 °C on a paper substrate. Cyclotene was first spin coated on the entire substrate to act as a surface barrier layer for water and other nutrient solutions. The active area of the fabricated light emitting diode (LED) consists of zinc oxide nanorods (ZnO NRs) and a poly(9,9‐dioctylfluorene) (PFO) conducting polymer layer. The fabricated LED shows clear rectifying behavior and a broad band electroluminescence (EL) peak covering the whole visible spectrum range from 420 nm to 780 nm. The color rendering index (CRI) was calculated to be 94 and the correlated color temperature (CCT) of the LED was 3660 K. The low process temperature and procedure in this work enables the use of paper substrate for the fabrication of low cost ZnO–polymer white LEDs for applications requiring flexible/disposable electronic devices. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

功率型白光LED的非线性混合调光方法

分析脉冲宽度调制(PWM)双通道输出白光LED的混合调光方法,建立PWM与混合光源输出的光通量和色温之间变化关系的非线性数学模型。基于Zig Bee无线通信模块CC2530作为双路PWM输出,控制以SN3350为核心的LED恒流驱动电源,完成占空比可调的暖白和冷白两路白光LED的色温和光通量混合调光控制系统设计,并通过高精度快速光谱辐射计HAAS-2000测试系统进行测试。实验结果表明,双路PWM能够较好地实现对LED色温和光通量的输出大小进行控制,混合光源相关色温在3 250~15 000 K范围内连续可调。理论计算与系统控制的光通量和色温存在的相对误差分别小于1.70%和8.50%。     

51 V GaN基高压LED的热分析

设计并制备了51 V高压LED。对器件进行了大电流冲击试验并对器件的损毁原因进行了分析。运用有限元分析软件ANSYS对LED关键结构部位进行参数化建模及热分布模拟,得到其稳态的温度场分布;然后经过与红外热像仪成像图对比,得出电极烧毁的原因在于芯粒连接处的电极过薄过窄而导致的电阻过大,为后续设计更可靠的高压LED提供了参考。对芯片分别进行蓝光及色温5 000 K的白光封装,并分别测量了热阻,涂覆荧光粉的白光灯珠的热阻要比没有涂覆荧光粉的蓝光灯珠高约4℃/W。同时,51 V高压LED的热阻比1 W大功率LED要高,说明高压LED的散热性能比常规LED要差,这可能与高压LED具有深沟槽及众多的互联电极结构有关。     

White light emission from blue and near ultraviolet light-emitting diodes precoated with a Sr3SiO5:Ce3+,Li+ phosphor

White-light-emitting diodes (WLEDs) were fabricated by combining a yellow Sr3SiO5:Ce3+, Li+ phosphor with a blue light-emitting diode (LED) (460 nm chip) or a near ultraviolet (n-UV) LED (405 nm chip), respectively. Color temperature (Tc) of Sr3SiO5:Ce3+, Li+-based WLEDs could be tuned from 6500 to 100,000 K (blue LED pumping) and from 4900 to 50,000 K (n-UV LED pumping) without mixing with other phosphors. The blue LED-pumped WLED showed excellent white light (luminous efficiency=31.7 lm/W, Tc=6857 K) at 20 mA. This WLED showed a stable color coordinates property against an increase of the forward current. An n-UV LED-pumped WLED also showed bright white light (25.0 lm/W, 5784 K) at 20 mA.     

Color tunable light‐emitting diodes with modified pulse‐width modulation

In this study, a color tunable light source, operated by a modified pulse width modulation method, is investigated. By utilizing this method along with anti‐parallel connected discrete light‐emitting diodes (LEDs) and two electrical terminals, a wide range of the chromaticity coordinates is attained and varied by electrical control. Using the combination of a blue LED and a phosphor‐converted yellow LED (blue LED plus yellow phosphor), the chromaticity range is varied by electrical control from pure blue to pure yellow. In addition, using the modified pulse‐width modulation method and a combination of white and red LEDs, white light with correlated color temperatures ranging from 5000 K to 2000 K is demonstrated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characteristic enhancement of white LED lamp using low temperature co-fired ceramic-chip on board package

In this paper, we propose low temperature co-fired ceramic-chip on board (LTCC-COB) package with improved thermal characteristics; no insulation layer exists between the LED chip and metal base. In actual measurement as well as in thermal simulation, the proposed LED lamp structure showed excellent thermal properties, compared with surface mound device-printed circuit board (SMD-PCB) package LED lamp. The optical output power, thermal distribution, current-voltage (I-V) and electroluminescence (EL) were measured and compared to analyze the characteristics of LTCC-COB package LED lamp with SMD-PCB package LED lamp. EL peak intensity of LTCC-COB package LED lamp is 1.75 times better than that of SDM-PCB package LED lamp. The thermal resistance between packing area and air was found to be 7.3 K/W and 7.9 K/W for LTCC-COB package and SMD-PCB package respectively. The proposed LTCC-COB packaged LED lamp is not only suitable for high power LED package due to its low thermal resistance but also a promising solution for illumination modules.     

多基色LED的照明通信光源显色性研究

可见光无线通信(visible light communication,VLC)是将LED照明技术和光通信技术相结合的一种新兴技术。针对目前LED照明通信光源显色性差、光效低且色温不可调等问题,依据多基色LED白光通信原理进行了相关研究,以Yoshi等提出的高斯分布形式作为基色LED的光谱模型,利用国际照明委员会(CIE)推荐的一般显色指数(R_a)和美国国家标准与技术研究所(National Institute of Standards and Technology,NIST)推荐的一般色质指数(Q_a)评价光源的显色性。采用遗传算法,在2 700~6 500 K色温范围内优化出单个色温以及色温可调光源满足显色性最优的光谱组合,并基于R_a和Q_a大于80的原则优化出色温可调光源光视效能(luminous efficacy of radiation,LER)最优化的光谱组合。最后根据实验结果分析了光源的显色性、光视效能和色温可调性三者之间的关系。结果表明：三基色色温可调白光LED满足显色性最优的峰值波长组合为613 nm/541 nm/464 nm,此时R_a和Q_a的最小值分别为81.2和81,可以满足一般条件下的照明通信需求;四基色色温可调白光LED满足显色性最优的峰值波长组合为620 nm/562 nm/505 nm/449 nm,此时R_a和Q_a的最小值分别为96.7和92.2。在特殊照明场所或要求较高的通信速率时,应采用四基色白光LED作为照明通信光源。仿真得到了三基色和四基色白光LED的最佳光谱组合,为宽通道可见光通信光源的设计提供了参考依据。     

Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor

A warm-white light-emitting diode (LED) without blending of different kinds of phosphors is demonstrated. An approach that consists of a blue LED chip and a wavelength-conversion phosphor is carried out. The phosphor is a newly developed yellowish orange CaEuSiAlON ceramic phosphor with high efficiency. The CIE1931 chromaticity coordinates (x, y) are (0.458, 0.414), the color temperature is 2750 K, and the luminous efficacy of this LED is 25.9 lm/W at room temperature and with a forward-bias current of 20 mA. The chromaticity of the assembled LED is more thermally stable than that of a LED with a conventional oxide phosphor (YAG:Ce) because of the better thermal stability of the oxynitride phosphor.     

涂敷红、绿荧光粉的白光LED显色性研究

通过蓝光发光二极管(LED)芯片激发红、绿两种荧光粉制作白光LED,首先保持两种荧光粉的配比不变,依次从2700～13000 K改变相关色温,发现在某一色温段时,显色指数达到最高.然后依次改变两种荧光粉的配比,重复试验,发现不同的荧光粉配比,达到最高显色指数所对应的色温段不同.试验结果表明,通过合理匹配红、绿荧光粉和硅胶三者之间的比例.可以实现在2700～13000 K之间的任一色温区,显色指数均能达到90以上,在4000 K以下的低色温区,显色指数可达到96.基于此.通过选择和匹配LED蓝光芯片、荧光粉的激发、发射波长,以及它们之间的比例关系,可以实现在任意色温段使显色指数最大化的白光LED光谱设计.     

白光LED用稀土荧光粉的制备和性质

在还原气氛保护下利用高温固相法合成了化学组分为(M₁,M₂)₁₀(PO₄)₆X₂(M₁=Ca,Sr,Ba;M₂=Eu,Mn;X=F,Cl,Br)的可被紫光激发的蓝光、绿光和红光荧光粉,制备了紫光LED芯片+蓝光荧光粉+YAG荧光粉的二基色白光LED;紫光LED芯片+蓝光荧光粉+红光荧光粉的二基色白光LED,以及紫光LED芯片+蓝光荧光粉+绿光荧光粉+红光荧光粉的三基色白光LED。测试了所有制备的白光LED在不同的直流电驱动下的色度坐标、相关色温和显色指数。     

Influence of temperature on different optoelectronic characteristics of InGaN light emitting diodes

We have measured the electroluminescence (EL) and carrier lifetime characteristics in InGaN/Sapphire purple light emitting diode (LED), namely, UV3TZ-405-30 in a temperature range from 350 to 120 K and have compared them with those of a similar LED (UV3TZ-395-15) but with different Indium concentration, measured earlier. While it is found that for the present device the EL intensity decreases drastically with lowering of temperature after reaching a maximum (99%) at 228 K, this is markedly different from the previous device where intensity continues to increase monotonically till lowest temperature. This qualitatively distinct temperature dependence indicates difference in nature of localisation of carriers in the multiple quantum wells for varying Indium content in the two devices. The light–current–temperature data have been analysed in terms of the semiconductor rate equations to determine different optoelectronic properties. Next, estimating the ideality factor from the current–voltage (I–V) measurements, the effective carrier lifetime has been evaluated from the open circuit voltage decay process. Using the above measurements, the temperature dependence of the internal quantum efficiency of the device has been calculated and it is found to attain a maximum value of 99.88% at 228 K. Unlike all previous calculations, a unique feature of the present approach has been to include the effect of temperature dependence of the radiative recombination coefficient (B) in the rate equation analysis. Finally, a comparative study of the temperature dependence of the different optoelectronic properties of both devices is presented with and without this effect.     

温度和电流对白光LED发光效率的影响

对大功率白光LED发光效率进行了研究,得出温度和电流对LED发光效率的影响:随着温度的升高,势阱中辐射复合几率降低,从而降低了发光效率;电流的升高,使更多的非平衡载流子穿过势垒,降低了发光效率。LED工作时,过高的工作温度或者过大的工作电流都会产生明显的光衰:如果LED工作温度超过芯片的承载温度,这将会使LED的发光效率快速降低,产生明显的光衰,并且对LED造成永久性破坏;如果LED的工作电流超过芯片的饱和电流,也会使LED发光效率快速降低,产生明显的光衰。并且LED所能承载的温度与饱和电流有一定关系,散热良好的装置可以使LED工作温度相对降低些,饱和电流也可以更大,LED也就可以在相对较大的电流下工作。     

Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (<1 A/cm2 ) with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.     

纯绿LED的辐射机理和深能级研究

本文结合N-free GaP材料外延生长和器件研制,用时间分辨光谱和发射光谱对温度的依赖关系,研究了构成绿色辐射的不同跃迁过程,测量了它们的光生载流子寿命.通过阴极射线轰击芯片前后深能级瞬态谱(DLTS)的分析,并根据退化过程中近红外光谱的变化,探讨了影响纯绿LED效率的主要因素.     

Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells

Electroluminescence (EL) spectra of blue InGaN/GaN multiple-quantum-well light-emitting diode (LED) have been investigated over a wide range of injection current (0.001–200 mA) and at various temperatures (6–300 K). Surprisingly, with increasing the injection current the EL peak energy shows an initial blueshift accompanied by a broadening of the EL linewidth at low temperatures (below 30 K). This trend differs from the usual photoluminescence (PL) measurement results, which have shown that with increasing the optical excitation power the PL peak energy gave an initial blueshift accompanied by a narrowing of the PL linewidth at low temperatures. The anomalous current behavior of the EL spectra may be attributed to electron leakage results in the failure of Coulomb screening effect and the relative enhancement of the low-energetic localized state filling at low temperatures and low currents. The electron leakage for the LED is further confirmed by both the current dependence of the EL intensity and the temperature dependence of the EL efficiency.     

白光LED极限流明效率的计算

对蓝光芯片加黄色荧光粉制备白光LED方法的流明效率进行了理论计算。根据光度学原理,我们考虑到视觉函数V(λ)的修正,以色坐标为x=0.325,y=0.332,显色指数为81.5,色温为5 914 K的白光LED发光光谱为依据,计算了白光LED流明效率的理论极限:得出每瓦白光LED辐射光功率产生的光通量为298.7 lm,白光LED发射的总光子数为2.7×10¹⁸。在理想情况下,注入一个电子-孔穴对产生一个蓝光光子,设荧光粉的量子效率为1,因此,注入的电子-孔穴对数亦等于白光光子数,进而计算出白光LED每辐射1 W的光功率所需的电功率为1.51 W,上述白光LED发光光谱对应的白光LED的电-光转换的理论极限流明效率为197.8 lm/W。     

Light-emitting diodes for space applications

The use of Light Emitting Diode (LED) devices for illumination inside space cabin and outside have been well exploited in the past few years; these include, for example, the in-cabin application on the bio-science satellite in 2007 and the out-of cabin application on spacecraft in 2008 to shine on the first step in space of Chinese astronaut. The simulation of the optical properties has been performed to optimize the brightness of the LED lamp. The thermal property of assembled LED lamp has been experimentally characterized and used in combination with the numerical simulation to improve the precision of determining the active layer temperature of the LEDs packed in the lamp. The measurement precision of the LED active layer temperature is improved to a value better than 1 K.     

A novel white light-emitting diode (w-LED) fabricated with Sr<Subscript>6</Subscript>BP<Subscript>5</Subscript>O<Subscript>20</Subscript>:Eu<Superscript>2+</Superscript> phosphor

Sr₆BP₅O₂₀:Eu²⁺ phosphor was prepared by the solid-state reaction method under a weak reductive atmosphere and the photoluminescence properties were studied systematically. The bluish-green emission band of Sr₆BP₅O₂₀:Eu²⁺ phosphor is peaking at 475 nm, and the excitation bands are broad with peaks at about 290 and 365 nm with a shoulder around 390 nm, respectively. By combining with Ga(In)N-based near-ultraviolet LEDs, a bluish-green LED was fabricated based on the Sr₆BP₅O₂₀:Eu²⁺ phosphor, and a novel intense white LED was fabricated based on the bluish-green phosphor Sr₆BP₅O₂₀:Eu²⁺ and the red phosphor (Sr,Ca)₅(PO₄)₃Cl:Eu²⁺,Mn²⁺. When this two-phosphor white LED is operated under 20-mA forward-bias current at room temperature, the Commission Internationale de l’Eclairage(CIE) chromaticity coordinates (x,y), the correlated color temperature Tc, and the color rendering index Ra are calculated to be (0.3281,0.3071), 5687 K, and 87.3, respectively. The dependence of the bluish-green and two-phosphor white LEDs on different forward-bias currents from 5 mA to 50 mA shows a similar behavior. As the current increases, the relative intensity simultaneously increases. The CIE chromaticity coordinates (x,y) of the two-phosphor white LED tend to decrease. Consequently, the correlated color temperature Tc increases from 3800 K to 9400 K and the color rendering index Ra of the two-phosphor white LED increases from 83.4 to 91.8 simultaneously. PACS 07.60.-j; 42.70.-a; 71.55.Eq     

基于热阻网络的大功率LED热管散热研究

LED结温高一直是大功率LED发展的技术瓶颈,随着单位热流密度的不断攀升,在自然冷却条件下,单纯的直肋热沉散热方式已不能满足散热要求。应用热管技术设计了热管散热系统,对该系统的传热机理和传热路线进行分析,建立该系统对应的热网络模型,对各部分热阻进行分析与计算,求得总的理论总热阻,计算得出理论结温;同时应用有限元方法对该系统进行仿真分析,对LED模块（0.025 m0.025 m0.005 m）输入30 W 电功率,得出其仿真结温稳定在58.19℃,满足结温小于65℃的要求,说明应用热管的散热系统满足设计要求。由热阻网络模型计算得出的理论结温为57.43℃,与仿真结果相差0.76℃,其误差仅为1.31％,验证了理论分析计算的正确性,对实际工程中热设计具有指导意义。