Fano resonance in heavily doped porous silicon

Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si SiO₂ interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. Copyright © 2011 John Wiley & Sons, Ltd.     

Tunable Fano resonances in the ballistic transmission and tunneling lifetime in a biased bilayer graphene nanostructure

Dynamics of the Dirac fermions, in particular the transmission coefficient and the resonant tunneling lifetime are studied across a bilayer graphene electrostatic double barrier structure modulated by an in plane homogeneous electric field. Asymmetric Fano type resonances are noted for the first time in the transmission spectrum of the bilayer graphene nanostructures and are found to be highly sensitive to the direction of incidence of the charge carriers and the applied homogeneous electric field. The effect of the external field on the extended and the evanescent modes is also analysed. Resonant tunneling lifetime is found to be highly anisotropic in nature. The chiral carriers are either accelerated or decelerated by the electric field depending on the energy of the quasi-bound states, the angle of incidence and the magnitude of the applied field. Effects of the external field on the localization of the chiral carriers are also discussed.     

Fano resonances in heterogeneous dimers of silicon and gold nanospheres

We theoretically investigate the optical properties of dimers consisting of a gold nanosphere and a silicon nanosphere. The absorption spectrum of the gold sphere in the dimer can be significantly altered and exhibits a pronounced Fano profile. Analytical Mie theory and numerical simulations show that the Fano profile is induced by constructive and destructive interference between the incident electric field and the electric field of the magnetic dipole mode of the silicon sphere in a narrow wavelength range. The effects of the silicon sphere size, distance between the two spheres, and excitation configuration on the optical responses of the dimers are studied. Our study reveals the coherent feature of the electric fields of magnetic dipole modes in dielectric nanostructures and the strong interactions of the coherent fields with other nanophotonic structures.     

Raman study of Fano interference in p‐type doped silicon

As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter‐valence band transitions on the zone center optical phonon in heavily p‐type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra‐violet (325 nm). The asymmetry in the one‐phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one‐dimensional critical point (E = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications. Copyright © 2010 John Wiley & Sons, Ltd.     

Fano resonances in semiconductor superlattices

We use semiconductor superlattices as a model system for the investigation of Fano resonances. In absorption the excitonic transitions of the Wannier–Stark ladder show the typical asymmetric line shape due to coupling to the continuum of lower-lying transitions. The unique feature of these Fano resonances is that they allow to continuously tune the key parameter – the coupling strength Γ between the discrete state and the degenerate continuum – by varying the bias voltage. Using this feature, we directly show that the Fano coupling leads to a fast polarization decay. We also investigate the dependence of the Fano parameters on the structure of the superlattice and compare with an extensive theoretical model of the resonances.     

低温退火磷吸杂工艺对低少子寿命铸造多晶硅电性能的影响

本文针对低少子寿命铸造多晶硅片进行试验, 通过一种将多温度梯度磷扩散吸杂工艺与低温退火工艺结合的新型低温退火吸杂工艺, 去除低少子寿命多晶硅片中影响其电性能的Fe杂质及部分晶体缺陷, 提高低少子寿命多晶硅所生产的太阳电池各项电性能. 通过低温退火磷扩散吸杂工艺与其他磷扩散吸杂工艺的比较, 证明了低温退火吸杂工艺具有更好的磷吸杂和修复晶体缺陷的作用. IV-measurement发现经过低温退火工艺处理后的低少子寿命多晶硅, 制备的太阳电池光电转换效率比其他实验组高0.2%, 表明该工艺能有效地提高低少子寿命多晶硅太阳电池各项电性能参数及电池质量. 本研究结果表明新型低温退火磷吸杂工艺可将低少子寿命硅片应用于大规模太阳电池生产中, 提高铸造多晶硅材料在太阳能领域的利用率, 节约铸造多晶硅的生产成本. 关键词： 低温退火 磷吸杂 低少子寿命多晶硅 太阳电池     

基于硅基光子器件的Fano共振研究进展

硅基光子技术的发展为新型微纳光学功能器件和片上系统提供了高可靠、高精度的实现手段.采用硅基光子技术构建的具有连续(准连续)模式微腔与离散模式的微腔耦合产生的Fano共振现象得到了广泛关注.Fano共振光谱在共振波长附近具有不对称且尖锐的谐振峰,传输光的强度在共振波长附近从0突变为1,该机制可显著提高硅基光开关、探测器、...     

Dark and bright mode hybridization: From electric to magnetic Fano resonances

The excitation of plasmonic Fano resonances leads to a dual advantage in nano-photonics, in terms of local field enhancement and far-field spectral selectivity. Nevertheless, a remarkable challenge related to the hybridization between bright and dark plasmonic modes, i.e. between the two elements cooperating to the Fano resonance generation, consists in the sub-wavelength activation of dark modes via near-field channel. In this regard, strongly coupled plasmonic nano-assemblies are ideal systems providing a highly efficient way towards their excitation. Here, we analyze two trimer nano-architectures supporting respectively electric and magnetic Fano resonances. The different approaches employed for describing the two systems highlighted the role that the near-field coupling and the LSPs de-phasing separately play in the Fano hybridization phenomena.     

等离子体纳米结构中的Fano共振效应及其应用

Fano共振效应是一种具有非对称线型的共振散射现象,起源于共振过程和非共振过程的量子干涉效应。近年来,在等离子体纳米结构中Fano共振现象也被发现,并成为纳米光子学的一个研究热点。等离子体Fano共振通常具有较窄的光谱线宽,且不能直接与入射光耦合,只能局域在近场,强的近场局域特性可以获得巨大的表面电磁场增强。由于等离子体Fano共振独特的光学特性,已经被应用到单分子探测、高灵敏度传感、增强光谱、完美吸收、电磁诱导透明和慢光光子学器件等众多领域当中。     

基于平面超材料的Fano谐振可调谐研究

基于两段相同金属分裂环谐振器构成的单层结构, 从理论及实验方面研究了平面超材料的可调谐Fano谐振. 实验测量了平面超材料对TE和TM入射波的电磁响应, 利用电磁波的入射角度控制Fano谐振的强度, 实现了谐振的开关特性, 谐振频率红移可达到21%. 基于有限元法给出了平面超材料的场分布, 强的正常色散表明平面超材料的电磁响应可类比经典电磁诱导透明现象, 仿真与实验结果相符合. 对称结构超材料Fano谐振的开/关特性为超材料性能的可调谐控制提供了有效途径.     

亚波长介质光栅/MDM波导/周期性光子晶体中双重Fano共振的形成及演变规律分析

基于衍射原理和模耦合理论,提出了一种由亚波长介质光栅/金属-电介质-金属(metal-dielectric-metal,MDM)波导/周期性光子晶体组成的复合微纳结构.结合反射角谱深入分析了表面等离子激元的传输特性以及在固定波长下不同入射角时刻形成的双重Fano共振的产生机理.研究表明,双重Fano共振是由在亚波长介质光栅/MDM波导结合的上层结构中产生的独立可调的双离散态分别与在周期性光子晶体中形成的连续态相互耦合形成的.接着定量讨论了结构参数对双重Fano特性的影响,探究了双重Fano共振的演变规律.结果表明,改变结构参数可实现双Fano共振曲线和谐振角度之间的调谐,且在最优条件下,共振A区FR a和FR b的品质因数(figure of merit,FOM)可高达460.0和4.00×10~4,共振B区FR a和FR b的FOM值可高达269.2和2.22×10~4.该结构可为基于Fano共振的折射率传感器设计提供有效的理论参考.     

Raman spectroscopy for study of interplay between phonon confinement and Fano effect in silicon nanowires

A combined effect of doping (type and species) and size on Raman scattering from silicon (Si) nanowires (NWs) has been presented here to study interplay between quantum confinement and Fano effects. The SiNWs prepared from low doping Si wafers show only confinement effect, as evident from the asymmetry in the Raman line‐shape, irrespective of the doping type. On the other hand SiNWs prepared from wafer with high doping shows the presence of electron–phonon interaction in addition to the phonon confinement effect as revealed from the presence of asymmetry and antiresonence in the corresponding Raman spectra. This combined effect induces an extra asymmetry in the lower energy side of Raman peak for n‐type SiNWs whereas the asymmetry flips from lower energy side to the higher energy side of the Raman peak in p‐type SiNWs. Such an interplay can be represented by considering a general Fano‐Raman line‐shape equation to take care of the combined effect in SiNWs. Copyright © 2015 John Wiley & Sons, Ltd.     

双波长自由载流子吸收技术测量半导体载流子体寿命和表面复合速率

提出了采用双波长自由载流子吸收技术同时测量半导体材料载流子体寿命和前表面复合速率的方法.通过数值模拟,定性分析了不同载流子体寿命和前表面复合速率对信号的影响,同时对测量参数的可接受范围和不确定度进行计算并与传统频率扫描自由载流子吸收方法测量结果进行比较.结果表明：提出的双波长自由载流子吸收方法可明显减小载流子体寿命和前表面复合速率的测量不确定度,提高参数测量精度;表面杂质和缺陷越多的样品,其前表面复合速率测量不确定度越小.进一步分析表明,此现象与不同波长激光抽运产生的过剩载流子浓度分布不同有关.     

A combined transient and steady state approach for robust lifetime spectroscopy with micrometer resolution

We present the combination of two complementary micro‐photoluminescence spectroscopic techniques operating in transient and steady state condition, respectively. Introducing the time domain into the well‐established micro‐photoluminescence mapping approach operating under steady state conditions demonstrates a distinct improvement of the robustness and reliability in the determination of charge carrier lifetime measured with micrometer spatial resolution. Lifetimes from 50 ns to above ms are accessible. We elaborate a calibration procedure and apply the combined all‐photoluminescence setup to high‐performance multicrystalline silicon. A lifetime image obtained from the established photoluminescence imaging technique is reconstructed from the microscopic map by considering lateral diffusion and optical blurring, revealing a more detrimental influence of small angle grain boundaries as well as a higher lifetime within grains as may be deduced from the standard imaging technique. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Time‐resolved free carrier lifetime microscopy in bulk GaN

A novel setup for lifetime microscopy measurements was designed and applied for carrier lifetime mapping in a bulk GaN. Photoexcitation by a picosecond UV pump and detection of time‐resolved free carrier absorption (FCA) images on a CCD camera enabled the mapping of carrier lifetime distribution with a spatial resolution of 5 μm. The spatial variation of lifetime in the bulk HVPE‐grown GaN revealed the presence of different‐size crystalline grains, with lifetime peaking up to 70 ns in the centers of the largest grains (～20 μm in diameter) and dropping to 10 ns in the small ones, while the spatially averaged lifetime was 40 ns. The inhomogeneity was ascribed to the interplay of nonradiative diffusion‐limited recombination at grain boundaries and a bulk lifetime in the crystallite centers. The numerical solution of spatially‐resolved carrier decay rate in the crystallite centers at high injection levels and comparison with experimental data provided a bulk nonradiative recombination time of ～70 ns. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

劈裂环-盘二聚体结构的多重Fano共振

利用时域有限差分方法,理论研究了由劈裂环和圆盘构成的金二聚体结构的光学性质,分析了劈裂环的缺口取向和对称性破缺程度对其Fano共振特性的影响.结果表明,当缺口方向平行于二聚体中心连线时,劈裂环的奇数阶和偶数阶模式均能与圆盘的偶极模式作用产生Fano共振,且随着劈裂环的进一步破缺,更多的偶数阶Fano共振能被激发出来;但...     

Circular dichroism induced by Fano resonances in planar chiral oligomers

We present a general theory of circular dichroism in planar chiral nanostructures with rotational symmetry. It is demonstrated, analytically, that the handedness of the incident field's polarization can control whether a nanostructure induces either absorption or scattering losses, even when the total optical loss (extinction) is polarization‐independent. We show that this effect is a consequence of modal interference so that strong circular dichroism in absorption and scattering can be engineered by combining Fano resonances with planar chiral nanoparticle clusters.

     

Modulation of Fano resonances in symmetry-broken gold-SiO2-gold nanotube dimers

Fano resonances in the symmetry-broken gold-SiO2-gold(BGSG)nanotubes and the associated dimers have been investigated based on the finite element method.In the BGSG nanotube,the symmetry breaking induced the interactions of the inner gold core and outer gold nanoshell plasmons of all multipolar orders and hence the red-shifts of the plasmon resonance modes and the enhanced quadrupole mode peaks were observed.The interference of the quadrupole mode peak with the subradiant dipole mode caused a Fano-dip in the scattering spectrum.By increasing the core offset-value in the BGSG nanotube,the Fano dip with low energy showed a red-shift and became deeper.Unexpectedly the plasmon coupling between a GSG nanotube and a BGSG nanotube can lead to two strong Fano dips in the scattering spectra of the dimer.It was further noted that the thin side of the BGSG nanotube located at two sides of the dimer gap can lead to the strong near-field coupling between two BGSG nanotubes and hence a deeper and broader Fano dip.