Polymer nanocomposites containing different concentrations of Au nanoparticles have been investigated by small angle X‐ray scattering and electronic absorption spectroscopy. The variation in the surface plasmon resonance (SPR) band of Au nanoparticles with concentration is described by a scaling law. The variation in the plasmon band of ReO3 nanoparticles embedded in polymers also follows a similar scaling law.
Persistent layer‐by‐layer growth is demonstrated for pulsed‐laser homoepitaxy of ZnO thin films on $(000\bar 1)$ ZnO single crystals. Employing interval pulsed‐laser deposition (PLD), RHEED oscillations are stabilized over a film thickness of about 90 nm. For interval pulsed laser deposited films a considerably decreased root‐mean‐square surface roughness of 0.26 nm was found, in comparison to 0.74 nm for conventional PLD. A small asymmetry in the X‐ray diffraction (XRD) 2θ –ω scan reveals compressive strain in the thin film being slightly larger for interval PLD as compared to conventional PLD. The FWHM of the photoluminescence (PL) I6 line is higher with about 500 µeV as compared to 350 µeV for the conventional PLD. Consequently, both XRD as well as PL indicate a slightly higher amount of charged defects for the interval PLD.
ZnO thin films with a rippled surface structure were used as electron‐collecting layers of inverted organic photovoltaics (OPVs). Using additional ultrathin layers of ZnO and TiO2 fabricated using atomic layer deposition (ALD), not only the power‐conversion efficiency of the OPVs could be increased (up to 3.5%), but also the photovoltaic performance became nearly constant within 100 days without any additional encapsulations of the solar cells under ambient conditions.
A passive micro‐displacement sensor (for ～μm displacement) was fabricated based on a magnetoelectric laminate, in which the displacement change can result in a change of the magnetic flux around the magnetoelectric sensor. The displacement measurement was realized by measuring the magnetoelectric output voltage. The displacement detecting coefficient was ～2.5 mV/μm at a frequency of ～1 kHz. This passive displacement sensor possesses the advantages of low cost, high resolution, low energy consumption and good linearity and has potential for application in future displacement detectors.
MgZnO‐based ultraviolet avalanche photodetectors (APDs) have been fabricated from Au/MgO/Mg0.44Zn0.56O/MgO/Au Schottky structures. The carrier avalanche multiplication is realized via an impact ionization process occurring in the MgO layer under relatively large electric field. The APDs exhibit an avalanche gain of 587 at 31 V bias, and the response speed of the APDs is in the order of microseconds.
We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se2 absorber layers are discussed.
In this Letter, a novel modified anodization was utilized to synthesize high‐aspect‐ratio, top‐open and ultraflat‐surface TiO2 nanotubes. The interruption of voltage during anodization leads to the formation of a double‐layered structure. Due to the weak mechanical connection between the upper and the underlying layer, the two parts can be easily detached. Compared with the conventional ultrasonication method to remove the clusters of nanotubes where rough surfaces resulted, this efficient and reliable strategy may facilitate further applications of TiO2 nanotubes in diverse conditions.
When a GaAs(001) substrate is heated up to 650 °C in a scanning electron microscope (SEM) vacuum chamber with vacuum range from 10–4 Torr to 10–5 Torr, real‐time SEM observation reveals microscale pits on GaAs substrate surface. The annealing process of GaAs substrate in vacuum causes excess evaporation of arsenic and accumulation of gallium as liquid droplets on the surface. As the function of electrochemical drills, the gallium droplets etch away GaAs beneath the surface to make microscale holes on GaAs substrate. With small amount of oxygen in the chamber acting as etching catalyst, gallium droplets etch GaAs much faster than in ultra‐high vacuum (UHV) MBE chamber. This process provides an easy technique to fabricate microscale pits on GaAs(001) surface.
InGaN/GaN light‐emitting diodes (LEDs) are known to exhibit a strongly non‐uniform vertical carrier distribution within the multi‐quantum well (MQW) active region. We propose to eliminate “dark” quantum wells by insertion of multiple tunnel junctions into the MQW which allow for the repeated use of electrons and holes for photon generation. In good agreement with available measurements, we demonstrate by self‐consistent numerical simulation that such tunnel junction LED design promises quantum efficiencies as high as 250% as well as a strongly enhanced output power at high input power, compared to conventional LED concepts.
Ordered Sr2CrReO6 has been synthesized recently. It is measured to be ferrimagnetic semiconductor, in contrary to the previous reports of metallic properties. To solve the discrepancy, we have investigated the compound by using the density functional theory. The semiconducting behavior is reproduced by including the electron correlation and spin–orbit coupling simultaneously. The calculated band gap is 0.22 eV, close to the experimental value of 0.21 eV. A large orbital moment of 0.69µB is found for Re, which is caused by the Coulomb‐enhanced spin–orbit coupling. By applying pressure, a semiconductor to half‐metal transition is observed through 5% volume compression.
We report enhanced anomalous photovoltaic effects and switchable photovoltage generation in pure and Pr–Cr co‐doped BiFeO3 (BFO) nanotubes (NTs). Influence of metal doping on short circuit current, open circuit voltage, power conversion efficiency and fill factor are investigated. The power conversion efficiency of pure BFO NTs (～0.207%) is found to be enhanced by several orders of magnitude in comparison with the reported bulk effect. Pr‐doped NTs provide highest values of power conversion efficiency (～0.5%).
The possibility of multiferroicity arising from charge ordering in LuFe2O4 and structurally related rare earth ferrites is reviewed. Recent experimental work on macroscopic indications of ferroelectricity and microscopic determination of coupled spin and charge order indicates that this scenario does not hold. Understanding the origin of the experimentally observed charge and spin order will require further theoretical work. Other aspects of recent research in these materials, such as geometrical frustration effects, possible electric‐field‐induced transitions, or orbital order are also briefly treated.
We report on wet etching of photomodified regions in crystalline sapphire using KOH solution. Tightly focused femtosecond laser pulses (150 fs at 800 nm wavelength) were used to create void structures enclosed in an amorphised sapphire shell inside the bulk of a crystalline host. The diameter of the amorphous regions can be controlled by pulse energy and was typically 0.5–1.5 µm. The etching rate depends on the distance between adjacent irradiation spots, pulse energy, concentration of etchant and ultrasonic agitation.
We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high‐temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ～300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high‐temperature sneak current and tighter high‐temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.
This Letter reports on the assembly on the tip of an optical fibre of a metamaterial film fabricated by a self‐assembly bottom‐up method, composed of silver nanowires embedded in an alumina matrix. By illuminating the film through the fibre in a reflection configuration, we observe experimentally the optical response of the metamaterial in agreement with theoretical predictions and interpreted as the excitation of surface plasmon‐polaritons in the cylindrical surface of the nanowires. These results pave the way for low‐cost optical fibre devices that incorporate metamaterial films.
Bi2Te3 doped p‐type Pb0.13Ge0.87Te samples were prepared by hot pressing. We report on very high power factor values of ～30 μW/cm K2 at 500 °C, as were determined from Seebeck coefficient and electrical resistivity measurements. From dilatometric characterization, the phase transition from the low temperature rhombohedral to the high temperature cubic NaCl structures, takes place at 373 °C. This transition is accompanied by a continuous and gradual change of the lattice parameters, as was observed by hot stage XRD, suggesting a good mechanical durability upon thermal cycling and operating in large thermal gradients.
The efficiency of a photovoltaic cell is directly proportional to its open circuit voltage. This in turn is eventually set by the donor‐acceptor energy gap, i.e. the energy of the intermolecular charge‐transfer state in organic solar cells. In this letter we study diindenoperylene (DIP) as a new molecular acceptor. We show that planar heterojunctions of thiophene derivatives and DIP yield extraordinarily high open circuit voltages (Voc) of approximately 1.2 V for poly(3‐hexylthiophene) and almost 1.4 V for heat treated α‐sexithiophene. Those values are close to the maximum Voc attainable for these material systems.
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.
The crystallization process of mechanically alloyed Fe75Zr25 metallic glasses is investigated by means of both thermo‐magnetization and in situ neutron powder thermo‐diffraction experiments in the temperature range 300–1073 K. It was found that the crystallization takes place in a two‐step process, involving firstly the appearance of metastable Fe and Fe2Zr crystalline phases between 880 K and 980 K, and a subsequent polymorphic transformation into Fe3Zr above 980 K. These findings explain the anomalous magnetization vs. temperature behaviour on heating–cooling cycles.
