Photoemission studies of the surfactant-aided growth of Ge on Te-terminated Si(100)

The interactions of Ge adatoms with a Si(100) surface terminated by an ordered layer of Te have been studied in detail using XPS, SXPS, STM and LEED. It has been demonstrated that the Te layer has a surfactant action on the growth mode of the Ge in that the two dimensional growth regime is extended to at least 200 Å and the Te is seen to segregate to the growing Ge surface. The surface reconstruction of the Ge layer changes from (1 × 1) in the initial stages to (2 × 2) as growth proceeds and the surface population of Te is reduced. SXPS line shape analysis has indicated that the initial stages of Ge incorporation are characterised by the formation of small islands above those surface Si sites not fully coordinated with Te. Continued growth of such islands is, however, restricted due to their high surface free energy with respect to the surrounding Te-terminated areas. Ge atoms therefore site-exchange with Te atoms in bridge sites, thus becoming incorporated onto the Si lattice and displacing the Te to bridge sites on the growing surface. In this manner islanding is prevented and two-dimensional growth continues beyond the critical thickness. No evidence is seen for any significant incorporation of the Te within the growing Ge layer.     

A molecular beam study of alkali promotion of O2 sticking on Ge(100) and Si(100)

The alkali (Cs) promotion of O₂ sticking on Si(100) and Ge(100) has been studied by a molecular beam scattering method. In the curves of initial sticking probabilities versus alkali coverages, a threshold coverage for the alkali promotion is found around 0.2 ML. It is suggested that the appearance of the threshold coverage is a result of an abrupt change in the electronic state of the adatom from ionic to covalent or metallic bond with the substrates. For Ge(100) the alkali promotion is further increased as the incident energy is decreased, while an opposite trend is observed in Si(100). Alkali promotion effect on the physisorption-migration mediated process is discussed.     

Investigation of the peculiarities of Ge island growth on Si (100) under MBE conditions

The results of investigating the features of Ge-island formation on Si (100) under conditions of molecular-beam epitaxy is presented. Nanosized structures at heteroboundaries (islets and quantum dots) are attracting great interest due to new useful properties and broad prospects of their application.     

Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100)

We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the surfactant As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.     

Ferromagnetic Mn-doped Si0.3Ge0.7 nanodots self-assembled on Si(100)

Densely packed epitaxial Mn-doped Si(0.3)Ge(0.7) nanodots self-assembled on Si(100) have been obtained. Their structural properties were studied using reflection high-energy electron diffraction, energy dispersive x-ray diffraction, atomic force microscopy, extended x-ray absorption fine structure measurements and high-resolution transmission electron microscopy. Mn(5)Ge(1)Si(2) crystallites embedded in Si(0.3)Ge(0.7) were found. They exhibit a ferromagnetic behaviour with a Curie temperature of about 225?K.     

Element specific surface reconstructions of islands during surfactant-mediated growth on Si (111)

The early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si(n) clusters (n相似文献   

Dimer elongation on the monohydride-covered Ge/Si(100) surface

Using transmission ion channeling, we have made the first measurement of the Ge dimer geometry for the monohydride-covered Ge/Si(100)-2×1 surface. Comparison of calculated angular scans with experimental angular scans near the 100 and 110 directions has resulted in a measured Ge dimer bond length of 2.8 Å, which is 8% longer than the corresponding dimer bond length reported for Ge on Si(100) in the absence of H. This elongation is similar to that reported for Si dimers on the Si(100) surface. Also, relative to the (100) surface plane, the dimers change from tilted without H to untilted with H.     

Electron loss spectroscopy study of the growth by laser ablation of ultra-thin diamond-like films on Si(100)

Carbon films with thicknesses up to 10 monolayers (ML) have been grown on Si(100) substrates by means of laser ablation of graphite under ultra-high vacuum (UHV) conditions. The early stages of the growth have been characterized by Auger-electron (AES), electron-energy-loss (EELS) and ion-scattering (ISS) spectroscopies. EELS and AES can be used to qualitatively distinguish between the graphitic or diamond-like character of the films. The effect of submonolayer coverages on the surface electronic density of the silicon substrate has also been investigated. Carbon does not diffuse into silicon for room temperature depositions. Annealing at 950 °C causes graphitization and the formation of silicon carbide together with an intermixing of C and Si.     

The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100)

Surface Plasmon excitations are measured by high resolution electron energy loss spectroscopy (HREELS) on highyln-doped, clean Si(100) wafers. After different annealing cycles at 900°C the plasmon loss shifts to lower loss energy. This effect can be quantitatively described by out-diffusion of the phosphorus dopant. The assumption of diffusion profiles and fits of calculated loss spectra to the experimental data allow a determination of the diffusion constant of phosphorus in silicon.     

Effects of dislocations on the energy loss of channeled particles

A simple model to calculate the effects of dislocations on the energy loss of channeled particles is discussed. The curvature in the channel produced by the dislocation is approximated by an arc of constant radius which is determined by using the displacement equations for the dislocation. An analytical expression for the change in the energy loss of initially well channeled particles is obtained in the limit of small curvature i.e. for a channel not very near to the dislocation.     

Monohydride and dihydride formation at Si(100) 2x1: A high resolution electron energy loss spectroscopy study

Results from EELS and LEED investigations on the interaction of atomic hydrogen with the Si(100) 2x1 surface give direct evidence for the formation of two distinct surface phases: a monohydride Si(100) 2x1:H and a dihydride Si(100) 1x1::2H phase. Temperature and exposure time determine which of the two phases appears. An analysis of normal vibrational modes leads to an identification of hydrogen adsorption complexes in both phases.     

Atomistics of Ge deposition on Si(100) by atomic layer epitaxy

Chlorine termination of mixed Ge/Si(100) surfaces substantially enhances the contrast between Ge and Si sites in scanning tunneling microscopy observations. This finding enables a detailed investigation of the spatial distribution of Ge atoms deposited on Si(100) by atomic layer epitaxy. The results are corroborated by photoemission measurements aided by an unusually large chemical shift between Cl adsorbed on Si and Ge. Adsorbate-substrate atomic exchange during growth is shown to be important. The resulting interface is thus graded, but characterized by a very short length scale of about one monolayer.     

硅(001)图形衬底上锗硅纳米线的定位生长

纳米线的定位生长是实现纳米线量子器件寻址和集成的前提.结合自上而下的纳米加工和自下而上的自组装技术,通过分子束外延生长方法,在具有周期性凹槽结构的硅(001)图形衬底上首先低温生长硅锗薄膜然后升温退火,实现了有序锗硅纳米线在凹槽中的定位生长,锗硅纳米线的表面晶面为(105)晶面.详细研究了退火温度、硅锗的比例及图形周期对纳米线形成与否,以及纳米线尺寸的影响.     

Surface reconstructions of the Si(100)–Ge system

The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290°C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420°C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570°C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.