Plasmon energy, bulk modulus, electronic polarisability of AIBIIIC2VI and AIIBIVC2V ternary chalcopyrite semiconductors

A simple relation between the bulk modulus, plasmon energy, electronic polarisability are given for ternary chalcopyrite semiconductors. Bulk modulus has been evaluated from plasmon energy by proposing a linear relation between them. From bulk modulus electronic polarisability has been evaluated. The estimated values are in good agreement with the experimental values and earlier researchers.     

Elastic modulus,surface tension,adhesion, and ideal and real strengths of solids

Formulas for the surface tension coefficient, adhesion energy, elastic modulus, and strength of solids versus the atomic density have been derived. The theoretical values of these parameters have been confirmed by experimental data gathered from many metals, insulators, and semiconductors.     

Heat of formation of ternary chalcopyrite semiconductors

Heat of formation of I-III-VI₂ and II-IV-V₂ groups of ternary chalcopyrite semiconductors has been calculated using plasma oscillations theory of solids. Two simple relations between plasmon energy and heat of formation have been proposed. One is based on spectroscopic model of Phillips and Van Vechten and other is based on the best-fit data of heat of formation. The calculated values of heat of formation from both the equations are compared with the experimental values and the values reported by earlier workers. A fairly good agreement has been obtained between them.     

Effect of rare earth (Pr2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3 and Er2O3 ) on the acoustic properties of glass belonging to bismuth-borate system

Bismuth-borate glasses doped with some rare earth ions were studied with respect to the density, molar volume and the elastic moduli, Poisson’s ratio, Debye temperature, microhardness, softening temperature, acoustic impedance, diffusion constant and latent heat of melting. Ultrasonic velocities were measured by the pulse echo overlap technique at a frequency of 10 MHz and at room temperature. From these velocities and density values, various elastic moduli were calculated. The correlation of elastic stiffness, the cross link density, and the fractal bond connectivity of these glasses are discussed. The derived experimental values of shear modulus, bulk modulus, Young’s modulus, and Poisson’s ratio for our glasses are compared with the theoretically calculated values in terms of the bond compression model and Makishima-Mackenize theory.     

Relationship between the thermal expansion coefficient, plasmon energy, and bond length of ternary chalcopyrite semiconductors

A simple relation between the average bond length and plasmon energy, that is, d=15.30(?ω_p)^−2/3, has been proposed for A^IIB^IVC^V₂ and A^IB^IIIC^VI₂ chalcopyrite semiconductors. The average linear thermal expansion coefficient (α_L) of these semiconductors has been calculated using plasmon energy data. The linear expansion coefficients (α_a) and (α_c) of the lattice parameters a and c, respectively, have also been calculated. The calculated values of d, α_L, α_a and α_c have been compared with the experimental values and the values reported by different workers. A fairly good agreement has been obtained between them.     

Theoretical investigation of phase transition properties in strontium chalcogenides using potential model

The Born–Mayer potential has been employed to predict the phase transition pressure in four strontium monochalcogenides, namely, SrO, SrS, SrSe, and SrTe, which crystallize in the NaCl (B1) phase and with the application of pressure, transforms to the CsCl (B2) phase. The compression, bulk modulus and the first-order pressure derivative of bulk modulus have also been calculated and compared with the available experimental and other theoretical results. The calculated values of transition pressure and other elastic properties predict that the hardness and strength parameters depend on the crystal structure and have the different values for different structures.     

Static and thermophysical properties of chalcogenide crystals with NaCl structure

In the present communication an analysis of interionic potentials in fourteen chalcogenide crystals has been performed. This interionic potential has been used to predict the values of cohesive energy, isothermal bulk modulus and the pressure derivatives of bulk modulus in the solids under study. The many body interaction (MBI) effects have been taken into account within the framework of Hafemeister Zarht potential. Instead of using BM potential the Hafemeister-Zarht (HZ) type short range overlap potential has been considered between nearest as well as between next nearest neighbour ions. The short-range interactions, effective up to second neighbours are treated by considering the hardness parameter as an ionic property. The hardness parameter ρ_ij is evaluated using the data on overlap integrals. The results achieved in the present study are generally in good agreement with available experimental data. Values of cohesive energy, bulk modulus and its pressure derivatives calculated by previous investigators have also been shown for the sake of comparison.     

Prediction study of elastic properties under pressure effect for filled tetrahedral semiconductors LiZnN, LiZnP and LiZnAs

First principle calculations of elastic properties under pressure of the filled tetrahedral semiconductors LiZnN, LiZnP and LiZnAs are presented, using the pseudo-potential plane-waves approach based on density functional theory, within the local density approximation. Elastic constants, bulk modulus, Young’s modulus and Poisson’s ratio are calculated at zero pressure. A linear dependence of the bulk modulus and elastic constants with applied pressure is found. As the experimental elastic constants are not available for LiZnX, we have also calculated the elastic constants of GaN, GaP and GaAs, the binary analogues of LiZnN, LiZnP and LiZnAs, respectively, for checking the reliability and accuracy of our predicted results for LiZnX. The obtained results agree well with the available experimental data.     

The elastic,electronic, and optical properties of PtSi and PtGe compounds

The structural, mechanical, electronic and optical properties of orthorhombic PtSi and PtGe were investigated using norm-conserving pseudopotentials within the local density approximation in the frame of density functional theory. The calculated lattice parameters and bulk modulus for PtSi and PtGe have been compared with the experimental and theoretical values. The second-order elastic constants were calculated, and the other related quantities such as the Young's modulus, shear modulus, Poisson's ratio, anisotropy factor, sound velocities and Debye temperature have also been estimated. The linear photon-energy dependent dielectric functions and some optical properties such as the energy-loss function, the effective number of valance electrons and the effective optical dielectric constant were calculated. Our structural estimation and some other results are in agreement with the available experimental and theoretical data.     

A study of the orientation dependence of the electron energy loss spectra for single crystal films of copper and silver

Apart from two peaks caused by bulk and surface plasmons, four or five peaks (depending on the crystal type) of electron energy losses due to inter- and intraband electron transitions are observed in the investigation of the electron energy loss spectra for metals (Cu, Ag). A comparative analysis of the spectra for Cu or Ag films reveals a shift of bulk plasmon loss peaks to higher values for polycrystals, as in the case of transition metals and semiconductors. In a study concerning the orientation dependence of the energy loss spectra (ELS) for electrons scattered from the copper and silver surface, the anisotropy of the bulk plasmon peak is found when the incident beam’s polar angle or the sample’s azimuthal angle are altered. The anisotropy of the primary electron energy loss for plasmon excitation is also observed, depending on the sample orientation relative to the direction incident electrons. The energy losses are found to increase with an increasing atomic packing density of planes and crystal transparency relative to the incident beam.     

高压下钨弹性和热力学性质的第一性原理研究

本文利用密度泛函理论研究了高压下bcc结构钨的弹性和热力学性质,计算得到钨的晶格常数、体弹模量以及其对压强的一阶偏导与实验值符合较好;在常压下弹性常数计算值与实验值符合较好的基础上,预测了其高压数据.针对钨的固相结构稳定性问题,根据力学稳定判断标准得到0~600 GPa范围内bcc结构是力学稳定的.此外,通过体模量和剪切模量的计算得到bcc结构钨在压力低于600 GPa时的力学性能表现为韧性.最后,基于准简谐德拜模型,成功预测了钨的热膨胀系数、等压热容、等容热容和熵随着压强和温度的变化关系,为钨及其合金的进一步设计及应用提供参考.     

Studies on the opto-electronic properties of III–V and II–VI group semiconductors from optical electronegativities

New empirical relations have been proposed to evaluate bond energies (E_s) in compound semiconductors, first from the knowledge of optical electronegativities of the constituent ions and secondly from the energy gap values. The validity of the two relations has been tested in the case of certain III–V and II–VI group semiconductors by comparing the calculated values of E_s, with those in the literature. From the computed values of E_s, refractive indices have been calculated. The Penn gap (E_p), Fermi energy (E_F) and S_o-parameter for these semiconductors have also been determined. The estimated values of these parameters are utilized to evaluate the electronic polarizabilities (α). The computed values of a compare excellently with the standard data.     

高压下钨弹性和热力学性质的第一性原理研究

本文利用密度泛函理论研究了高压下bcc结构钨的弹性和热力学性质,计算得到钨的晶格常数、体弹模量以及其对压强的一阶偏导与实验值符合较好;在常压下弹性常数计算值与实验值符合较好的基础上,预测了其高压数据.针对钨的固相结构稳定性问题,根据力学稳定判断标准得到0~600 GPa范围内bcc结构是力学稳定的.此外,通过体模量和剪切模量的计算得到bcc结构钨在压力低于600 GPa时的力学性能表现为韧性.最后,基于准简谐德拜模型,成功预测了钨的热膨胀系数、等压热容、等容热容和熵随着压强和温度的变化关系,为钨及其合金的进一步设计及应用提供参考.     

Molecular dynamics simulation of thermodynamic properties of NaCl at high pressures and temperatures

The expansivity, constant-pressure heat capacity, and isothermal bulk modulus of sodium chloride (NaCl) have been obtained by using molecular dynamics method. The calculated thermodynamic parameters are found to be in agreement with the available experimental data. At an extended temperature and pressure ranges, these parameters have also been predicted. The thermodynamic properties of NaCl are summarized in the pressure 0-500 kbar ranges and the temperature up to 1000 K.     

Enthalpy of formation of Schottky defects in semiconductors

The enthalpy of formation of Schottky defects in crystals of II–VI, III–V, and IV–VI compounds has been calculated with the use of a method based on Mie-Lennard-Jones pair potentials, whose parameters have been determined from the experimental data on the Debye temperature, Grüneisen parameter, Poisson’s ratio, elastic constants, and bulk modulus. The found values of the enthalpy of formation agree with the known literature data and can be used to calculate the density of these defects in the crystals.     

高压下纳米锗的状态方程与相变

采用同步辐射能量色散X射线衍射技术和金刚石对顶砧高压装置，对晶粒尺寸分别为13，49，100nm的Ge进行了原位高压X射线衍射实验，最高压力为35GPa. 所得的体弹性模量分别为112，92，88GPa. 可以看出 随着晶粒尺寸的减小，其体弹性模量逐渐升高. 同时由立方金刚石结构转变为四方白锡结构的相变压力亦随之提高，其值分别为16.4，12.4，11.5GPa. 建立了一个描述晶粒尺寸与体弹性模量关系的模型，并用理论公式计算了相变压力随晶粒尺寸的变化. 尽管在数值上存在一定的误差，但理论计算结果成功预示了随着晶粒尺寸的减小，体弹性模量和相变压力增加的趋势，与实验结果相一致.     

Pressure behaviour and thermal expansion of NiMnSb from first principles calculations

A computational study of the pressure and thermal behaviour of NiMnSb within the framework of density functional theory and the Debye-Grüneisen model is reported. The theoretical values of equilibrium lattice parameter, bulk modulus, its pressure derivative, Debye temperature, Grüneisen constant and coefficient of thermal expansion are estimated from electronic structure calculated by the full-potential nonorthogonal local-orbital minimum basis method (FPLO). The bulk modulus and its pressure derivative have been computed using the Murnaghan form of the equation of states. The volume-temperature dependence was obtained by minimisation of the free energy as a sum of the total energy of the rigid lattice and the free energy of the vibration lattice. The thermal expansion coefficient for the studied NiMnSb, obtained within the Debye theory including anharmonicity, is in good agreement with experimental results.     

L12型铝合金的结构、弹性和电子性质的第一性原理研究

运用第一性原理方法研究了L12型铝合金相Al3Sc和Al3Zr的晶体结构、电子结构和弹性.结合能和形成能的计算表明,两种合金具有较强的合金化能力,且Al3Zr较Al3Sc具有更强的结构稳定性.电子结构分析表明,费米能级以下较多的价电子数决定了Al3Zr具有较强的结构稳定性.计算并分析比较了两种合金相的单晶弹性常数(C11,C12和C44)以及多晶弹性模量(体弹性模量B、剪切模量G、杨氏模量Y、泊松比ν和各向异性因子A).通过对比实验和其他理论计算结果,进一步分析和解释了两种合金相的力学性质.     

Photoconductors under transverse sweep-out conditions

In semiconductors with induced anisotropy of conductivity the influence of transverse carrier drift on the main photodetector parameters is investigated. The effect is connected to the change in bulk and surface contributions to the total recombination flow. The calculated and experimental dependences of sensitivity, response time, spectral sensitivity and noise on transverse drift rate, bulk lifetime and surface recombination velocities are obtained. It is shown that the transverse carrier sweep-out makes it possible to stabilize detector parameters at certain values. Experiments are performed on InSb and CdHgTe samples placed in crossed electric and magnetic fields.     

Pressure dependence of crystal structure and molecular packing in anthracene

Anthracene molecular crystal has been investigated up to a pressure of 10.5 GPa at room temperature using variable shape variable size Monte Carlo simulations in an isothermal–isobaric ensemble. We have reported various structural quantities, such as cell parameters and unit cell volume, as a function of pressure and compared them with the experimental results [J. Chem. Phys. 119, 1078 (2003)]. The pressure dependence of angles θ, δ and χ which describe the relative packing of molecules in the crystal has been calculated. We report that anthracene molecular crystal does not exhibit any first order phase transition up to a pressure of 10.5 GPa which is consistent with the experimental observations by Oehzelt et al. [Phys. Rev. B 66, 174104 (2002)]. The calculated equation of state (EOS) has been fitted to a Murnaghan-type EOS with good agreement. The calculated bulk modulus and the pressure derivative of bulk modulus are 8.2 GPa and 8.9 respectively which are in agreement with the experimentally calculated values.