100-femtosecond MeV electron source for ultrafast electron diffraction

A near-relativistic 100-fs MeV electron beam is developed by using a photocathode rf gun for revealing the hidden ultrafast dynamics of intricate molecular and atomic processes in materials through experimentation of ultrafast time-resolved electron diffraction (UED). The transverse and longitudinal dynamics of femtosecond electron beam in the rf gun were studied theoretically by particle simulation. The growths of the emittance, bunch length and energy spread due to the rf and space charge effects were investigated by changing the laser parameters, field gradient and electron charge. The theoretical studies indicate that a 100-fs MeV electron beam with the transverse emittance of 0.1 mm mrad and the relative energy spread of 10⁻³–10⁻⁴ at bunch charge of 0.1–2 pC (10⁶–10⁷ electrons per pulse) is achievable for UED, in which the intensity is three orders of magnitude higher than that produced by the conventional dc or pulsed guns.     

A measure of electron localizability

A functional of the same‐spin electron pair density is proposed as a measure of electron localizability. This functional yields the average number of same‐spin electron pairs in a region Ω enclosing a fixed charge. The functional equals zero if the fixed charge in Ω originates from one electron only, with all other same‐spin electrons outside the region Ω. Then, the correlation of the electronic motion in Ω and thus the localizability of an electron is high. If the motion of the same‐spin electrons becomes less correlated, more electrons participate in the fixed charge contained in Ω, the average number of same‐spin electron pairs (the functional) increases. In the Hartree–Fock approximation the Taylor expansion of the proposed localizability functional can be related to the electron localization function of Becke and Edgecombe without using an arbitrary reference to the uniform electron gas. © 2003 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Analytical electron microscopy of materials

Analytical electron microscopy enables combined crystallographic and chemical information with a high spatial resolution to be gained from microregions of electron-transparent specimens. This is reached by the combined application of imaging, diffraction and spectroscopic methods, using either a dedicated scanning transmission electron microscope or a conventional high-resolution electron microscope (having a strong objective lens) equipped with suitable X-ray or electron spectrometers. Of the diffraction methods especially the technique of convergent beam diffraction is used, yielding valuable information on crystal structures, lattice parameter changes, symmetry variations and crystal perfection, respectively. For chemical analysis, either energy-dispersive X-ray spectroscopy (EDX) is used or electron energy loss spectroscopy (EELS). Finally, high-resolution electron microscopy in the lateral resolution range of some 0.1 nm allows the reliable geometrical inspection of extreme microregions.     

Secondary electron microanalysis

Secondary electron microanalysis is described as a nonconventional method to observe microareas at sample surfaces. The method is characterized by a high lateral and depth resolution and additionally by a typical sensitivity to localized electric potentials and electron work functions. The limits of the method for measurement at high vacuum conditions in conventional scanning electron microscopes are described in connection with electron-sample interactions. Examples for investigations of distributions of localized electric potentials, electron work functions at semiconductors, ferroelectrics and electric ceramics are given.     

Topological analysis of the electron delocalization range

The electron delocalization range function EDR( ) (Janesko et al., J. Chem. Phys. 2014, 141, 144104) quantifies the extent to which an electron at point in a calculated wavefunction delocalizes over distance d. This work shows how topological analysis distills chemically useful information out of the EDR. Local maxima (attractors) in the EDR occur in regions such as atomic cores, covalent bonds, and lone pairs where the wavefunction is dominated by a single orbital lobe. The EDR characterizes each attractor in terms of a delocalization length D and a normalization , which are qualitatively consistent with the size of the orbital lobe and the number of lobes in the orbital. Attractors identify the progressively more delocalized atomic shells in heavy atoms, the interplay of delocalization and strong (nondynamical) correlation in stretched and dissociating covalent bonds, the locations of valence and weakly bound electrons in anionic water clusters, and the chemistry of different reactive sites on metal clusters. Application to ammonia dissociation over silicon illustrates how this density‐matrix‐based analysis can give insight into realistic systems. © 2016 Wiley Periodicals, Inc.     

生物体系中电子转移机理的研究Ⅱ: 分子间电子转移及 电子供、受体间不同基 团的影响

利用自编程序MOPAC-ET中AM1方法,及KT(Koopman'sTheorem)法,研究了二苯负离子体系的分子间电子转移现象,计算了其电子供、受体在不同距离下的V~A~B及它们之间的相关性,另外,还对两苯环间不同介入基团对电子转移的影响做了初步研究,发现不同的介入基团存在着较大的差异。     

Analytical,structural and electrical characterization of SiGe layers by electron microbeam techniques

k-ratios of Ge-L and Si-K measured at different beam energies allow to evaluate simultaneously composition and thickness of SiGe layers on a Si substrate. A simple technique applying backscattered electrons also enables estimation of composition of bulk SiGe and of composition and thickness of relatively thick (200 nm) SiGe layers on Si. Electron channeling patterns of pseudomorphic SiGe/Si structures and of pure Si substrate show no significant differences whereas in relaxed structures a smearing of the pattern with increasing density of misfit dislocations is observed. Under particular conditions the technique of the electron beam induced current permits imaging of recombination-active misfit dislocations with a spatial resolution around 0.2 m. Moreover, a repulsion of holes due to the valence-band offset in a n-Si/SiGe heterostructure was detected.     

Characterization of a laser‐nitrided titanium alloy by electron backscattered diffraction and electron probe microanalysis

After a laser gas nitriding treatment of the Ti‐7.5Al (atom %) titanium‐based alloy, we used a combination of electron backscattered diffraction (EBSD) in scanning electron microscope and electron probe microanalysis (EPMA) techniques in order to efficiently characterize the different phases in the resolidified layer. Representative measurements of chemical composition and reliable determination of crystal structure were possible for each phase of the complex microstructure. The reaction zone is formed by a mixture of isostructural TiN phases with dendritic and/or ‘coarse’ needles morphology, fixed into a α′‐Ti matrix (martensite) with a thin needle aspect. The nitrogen solubility was found to remain very low in the α′‐Ti matrix (up to 2–3 atom %), while in the TiN phase, an aluminum solubility as high as 4 atom % was measured, reducing drastically the nitrogen content into a Ti₇₉N₁₇Al₄ chemical composition. Copyright © 2005 John Wiley & Sons, Ltd.     

Acidity predictions in an electron propagator approach

An alternative way to calculate vertical ionization potentials (VIP) and vertical electron affinity (VEA) is the application of Koopman's theorem, using the electron propagator theory. In the present work, the results of the application of this theorem using the electron propagator formalism have been compared with the experiment in order to validate different basis set. Using the basis set with the best performance, the acidity tendencies in some substituted acetic acid molecules have been analyzed by correlating the proton affinity (PA) with molecular electronegativity (χ) and hardness (η); these last indexes were obtained from the calculated VIP and VEA considering the finite difference approximation. The above correlations were compared with equivalent correlations using the energy of the frontier Hartree–Fock orbitals and the corresponding Kohn–Sham orbitals, which were calculated with the B3LYP‐DFT procedure. The results indicate that the electron propagator theory could be an interesting alternative to evaluate reactivity indexes, since this theory gives reliable values of VIP and VEA. It was also found that (i) the VIP values are very close to experiment, with only a 0.38% of error; (ii) acceptable results are inferred for VEA; (iii) a triple zeta quality function works quite well in these calculations, and particularly the 6‐311G(d,p) basis set is the best, as it had been reported; and (iv) using the depronation energy (DPE), good results were obtained in the correlations δDPE‐VEA and δDPE‐χ. The results tested that P3 approximation in the electron propagator approach can be a new and interesting alternative in predicting VIP, VEA, and some reactivity indexes, such as χ and η, at least for the compounds studied. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2006     

Morphology,surface roughness,electron inelastic and quasielastic scattering in elastic peak electron spectroscopy of polymers

In elastic peak electron spectroscopy (EPES), the nearest vicinity of elastic peak in the low kinetic energy region reflects electron inelastic and quasielastic processes. Incident electrons produce surface excitations, inducing surface plasmons, with the corresponding loss peaks separated by 1–20 eV energy from the elastic peak. In this work, X‐ray photoelectron spectroscopy (XPS) and helium pycnometry are applied for determining surface atomic composition and bulk density, whereas atomic force microscopy (AFM) is applied for determining surface morphology and roughness. The component due to electron recoil on hydrogen atoms can be observed in EPES spectra for selected primary electron energies. Simulations of EPES predict a larger contribution of the hydrogen component than observed experimentally, where hydrogen deficiency is observed. Elastic peak intensity is influenced more strongly by surface morphology (roughness and porosity) than by surface excitations and quasielastic scattering of electrons by hydrogen atoms. Copyright © 2007 John Wiley & Sons, Ltd.     

肽链体系中的长程电子转移: 酪氨酸与色氨酸间电子转移的理论研究

用电子转移的半经典模型和量子化学半经验方法对色氨酸-酪氨酸二肽体系进行电子转移动力学参数计算.用AM1方法分别优化给体、受体和桥体几何构型,用线性反应坐标的构造了给体和受体分子间电子转移的双势阱,得到两透热势能面交叉处的反应坐标为R=(约等于)0.10,并确定了反应的内重组能及反应热.对色氨酰酪氨酸和酪氨酰色氨酸体系进行闭壳层HF自洽场计算,按Koopmans定理计算体系分子轨道分裂能值A(三角形),在R约为0处发现了A(三角形)的极小值,从而获得色氨酰酪氨酸及酪氨酰色氨酸体系分子内电子转移的电子转移矩阵元V~D~A分别为0.96kJ.mol^-^1和0.87kJ.mol^-^1.采用Marcus双球模型估算反应的溶剂重组能为64.60kJ.mol^-^1。     

Characterization of nanomaterials in food by electron microscopy

Engineered nanomaterials (ENMs) are increasingly being used in the food industry. In order to assess the efficacy and the risks of these materials, it is essential to have access to methods that not only detect the nanomaterials, but also provide information on the characteristics of the materials (e.g., size and shape).This review presents an overview of electron microscopy (EM)-based methods that have been, or have the potential to be, applied to imaging ENMs in foodstuffs. We provide an overview of approaches to sample preparation, including drying, chemical treatment, fixation and cryogenic methods. We then describe standard and non-standard EM-based approaches that are available for imaging prepared samples. Finally, we present a strategy for selecting the most appropriate method for a particular foodstuff.     

Correction procedures in electron probe microanalysis of bulk samples

In recent years many of the advances in quantitative microprobe analysis have come from the improved ability to model the complex physics in the computer. This has enabled the accuracy of normal bulk analysis to be improved-right down to the very light elements as far as boron-and has extended the technique to the analysis of multiple thin films and layered samples. It has also allowed the user to shortcut the use of standards, though at the cost of somewhat reduced accuracy. Thus the analyst has come to rely more and more on correction procedures of increasing complexity, yet at the same time must understand their limitations. It is likely that in future the computer itself will be able to accumulate the best practice of expert users, advising the newcomer how these procedures can be best applied and where they are most likely to be in error.     

Low-energy electron and X-ray degradation of biomedical plasma-fluoropolymer

Plasma-deposited thin films of fluoropolymer on metallic substrates were degraded by low-energy (1-100 eV) electrons and X-ray irradiation to simulate irradiation conditions of implanted coated stents in the human body during diagnostic procedures using high energy radiation. The desorption of anions and cations from the surface of the films induced by 1-100 eV electrons was recorded by mass spectrometry. The electron energy dependence of the emission of F⁻ exhibited a resonant peak at 12.9 ± 0.4 eV, showing the formation of a transient excited anion and a monotonic rise at higher energies, associated to dipolar dissociation. In the positive ion mode, the fragments F⁺, CF⁺, CF₂⁺, CF₃⁺, C₃F₃⁺, C₂F₄⁺ and C₂F₅⁺ were observed. Emission thresholds were measured and laid above 25 eV. The shape of the cation emission curves versus electron energy showed no resonant process. X-ray degradation was studied by X-ray photoelectron spectroscopy for different exposure times. Loss of fluorine in -CF₂ groups was observed and damage mechanisms were proposed.     

Innovative energy efficient low-voltage electron beam emitters

Advanced electron beams (AEB) has developed a modular, low voltage (80–125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates.     

Proton-coupled electron transfer from photo-excited CdS nanoparticles

Abstract

Polyoxometalate (POM) cluster anions form monolayers on metal(0) nanoparticles (NPs) in water, serve as protecting ligands for binary-salt nanocrystals (such as AgCl), and as covalently attached ligands on anatase TiO₂ nanocrystals. We now show that the lacunary-Keggin ion [α-AlW₁₁O₃₉]^9? (1) binds strongly to Cd²⁺ in water, providing control over the growth and stability of CdS nanoparticles (NPs) that form upon addition of sulfide. When reduced by a single electron, the already highly negatively charged POM, 1 is protonated by water, and 1-protected CdS NPs were used as visible-light driven electron donors to assess whether combined reduction and protonation of 1 occurred via sequential electron- and proton-transfer steps (an ETPT mechanism), or simultaneously, via concerted proton-electron transfer (CPET). Comparison of the kinetic profiles for reduction of 1 in D₂O and in H₂O showed the absence of a kinetic isotopic effect (KIE), characteristic of ETPT mechanisms.     

Local and surface analysis within an analytical electron microscope

Analytical transmission electron microscopes have the ability to display at very high spatial resolution both the structural information of solid specimens prepared as thin films and the spectroscopic information related either to electronic properties or to the elemental composition. An example of study, by electron energy loss spectroscopy, of small spherical silicon particles is given as an illustration of the performances of the technique.