Probing Dy3+ magnetic moments in multiferroic perovskite DyMnO3 by optical spectroscopy

We present a detailed temperature‐dependent (4–300 K) spectroscopic study of DyMnO₃ single crystals with distorted perovskite structure. Energies of 36 crystal‐field levels of Dy³⁺ in paramagnetic DyMnO₃ were determined. The Dy³⁺ ground Kramers doublet does not split at and splits below T_lock = 18 K. The splitting grows fast at temperatures near and reaches Δ₀ ≈ 11 ± 2 cm^–1 at 4 K. Using the experimental temperature dependence Δ₀(T), we calculate the dysprosium magnetic moment m_Dy(T) and the dysprosium contribution into specific heat and magnetic susceptibility. Analysing all the experimental data, we conclude that the Dy–Mn interaction is of the Dzyaloshinskii–Moriya type.

Intensity map in the temperature–wave number coordinates for a spectral line corresponding to the f–f transition of Dy³⁺ in DyMnO₃ and a scheme of the splitting of the Dy ground Kramers doublet. Arrows represent Dy magnetic moments.     

Towards a metallic quasi‐d9 system without copper: AgO at high pressure

AgO is a prototypical mixed‐valence compound, with markedly different coordination environment of dumbbell Ag(1+) and low‐spin square‐planar Ag(3+) which render it a narrow band gap semiconductor. The hybrid HSE06 functional reproduces fairly well the band gap of its P 2₁/c form at ambient conditions (ΔE_exp = 1.0–1.1 eV, ΔE_theor = 0.94 eV) and suggest progressive band gap decrease with external pressure with metallization at 50 GPa via band overlap. Dynamic (phonon) instability appears at the onset of metallization leading to a structural phase transition to a more stable but still metallic $$P\stackrel{?}{1}$$ form. The density of electronic states at the Fermi level of the $$P\stackrel{?}{1}$$ polymorph is small and a pseudo‐gap at the Fermi level is preserved.

Illustration of the predicted P2₁/c → $$P\stackrel{?}{1}$$ transformation.     

Layered MoS2 grown on c ‐sapphire by pulsed laser deposition

Layered growth of molybdenum disulphide (MoS₂) was successfully achieved by pulsed laser deposition (PLD) method on c ‐plane sapphire substrate. Growth of monolayer to a few monolayer MoS₂, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A_1g–E¹_2g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm^–1, suggesting a monolayer MoS₂ was obtained. Two‐dimensional (2D) layer growth of MoS₂ is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross‐sectional view of transmission electron microscopy (TEM). The in‐plane relationship, (0006) sapphire//(0002)MoS₂and sapphire//MoS₂ is determined. The results imply that PLD is suitable for layered MoS₂ growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS₂, analysed by X‐ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Charge correlations in cobaltates La2–xSrx CoO4

We report on an elastic neutron scattering study of the charge correlations in La_2–xSr_x CoO₄ with x = 1/3, 0.4 and 0.5. We found that the checkerboard charge ordering correlations present in the x = 0.5 sample persist in the x = 0.4 and 1/3 materials. These checkerboard charge ordering correlations are robust and explain the occurrence of nano‐phase separation in layered cobaltates for Sr‐concentrations away from half‐doping. The half‐integer reflections then arise from the nanometer‐sized hole‐rich regions (blue areas in title figure) instead of the undoped ones (red areas in title figure). The appearance of nano‐phase separation is an important ingredient for understanding the formation of hour‐glass shaped magnetic excitation spectra in La_2–xSr_x CoO₄.

Nano‐phase separation in La_2–xSr_x CoO₄ (schematically). Red areas: undoped La₂CoO₄ islands, blue areas: checkerboard charge ordered regions; black, green and blue balls represent nonmagnetic Co³⁺ ions, magnetic Co²⁺ ions and oxygen ions, respectively; green arrows indicate Co²⁺ spins [1, 2].     

Magnetic properties of hard magnetic (Fe,Cr)3Sn2 intermetallic compound

By high‐throughput screening Fe–Sn–Cr, (Fe,Cr)₃Sn₂ (Fe_53.5Cr_6.5Sn₄₀) with high potential as new hard magnetic compound is discovered. To produce the compound in large amounts a special procedure is needed. By quantitative microscopy and magnetometry promising intrinsic properties, J_s ～ 0.9 T, K₁ ～ 1.7 MJ/m³, T_C ～ 612 K, are found with K₁ increasing with temperature.

     

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

The transfer characteristics (I_D–V_G) of multilayers MoS₂ transistors with a SiO₂/Si backgate and Ni source/drain contacts have been measured on as‐prepared devices and after annealing at different temperatures (T_ann from 150 °C to 200 °C) under a positive bias ramp (V_G from 0 V to +20 V). Larger T_ann resulted in a reduced hysteresis of the I_D–V_G curves (from ～11 V in the as‐prepared sample to ～2.5 V after T_ann at 200 °C). The field effect mobility (～30 cm² V^–1 s^–1) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n‐type behaviour in the as‐prepared device to the appearance of a low current hole inversion branch after annealing. This latter effect indicates a modification of the Ni/MoS₂ contact that can be explained by the formation of a low density of regions with reduced Schottky barrier height (SBH) for holes embedded in a background with low SBH for electrons. Furthermore, a temperature dependent analysis of the subthreshold characteristics revealed a reduction of the interface traps density from ～9 × 10¹¹ eV^–1cm^–2in the as‐prepared device to ～2 × 10¹¹ eV^–1cm^–2after the 200 °C temperature–bias annealing, which is consistent with the observed hysteresis reduction.

Schematic representation of a back‐gated multilayer MoS₂ field effect transistor (left) and transfer characteristics (right) measured at 25 °C on an as‐prepared device and after the temperature–bias annealing at 200 °C under a positive gate bias ramp from 0 V to +20 V.     

Multi‐crystalline silicon solar cells with metal‐assisted nano‐texturing using HNO3 as hole injection agent

In this study, metal‐assisted etching (MAE) with nitric acid (HNO₃) as a hole injecting agent has been employed to texture multi‐crystalline silicon wafers. It was previously proven that addition of HNO₃ enabled control of surface texturing so as to form nano‐cone shaped structures rather than nanowires. The process parameters optimized for optically efficient texturing have been applied to multi‐crystalline wafers. Fabrication of p‐type Al:BSF cells have been carried out on textured samples with thermal SiO₂/PECVD‐SiN_x stack passivation and screen printed metallization. Firing process has been optimized in order to obtain the best contact formation. Finally, j_sc enhancement of 0.9 mA/cm² and 0.6% absolute increase in the efficiency have been achieved. This proves that the optimized MAE texture process can be successfully used in multi‐crystalline wafer texturing with standard passivation methods.

J –V curves and SEM images of the nano and iso‐textured samples. j_sc enhancement of 0.9 mA/cm² together with 0.6% absolute efficiency gain was observed on nano‐textured samples.     

Orientations of ZnO grown on GaN

On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the ‐oriented grains. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Phonon anomalies and structural transition in spin ice Dy2Ti2O7: a simultaneous pressure‐dependent and temperature‐dependent Raman study

We revisit the assignment of Raman phonons of rare‐earth titanates by performing Raman measurements on single crystals of O¹⁸ isotope‐rich spin ice and nonmagnetic pyrochlores and compare the results with their O¹⁶ counterparts. We show that the low‐wavenumber Raman modes below 250 cm⁻¹ are not due to oxygen vibrations. A mode near 200 cm⁻¹, commonly assigned as F_2g phonon, which shows highly anomalous temperature dependence, is now assigned to a disorder‐induced Raman active mode involving Ti⁴⁺ vibrations. Moreover, we address here the origin of the ‘new’ Raman mode, observed below T_C ~ 110 K in Dy₂Ti₂O₇, through a simultaneous pressure‐dependent and temperature‐dependent Raman study. Our study confirms the ‘new’ mode to be a phonon mode. We find that dT_C/dP = + 5.9 K/GPa. Temperature dependence of other phonons has also been studied at various pressures up to ~8 GPa. We find that pressure suppresses the anomalous temperature dependence. The role of the inherent vacant sites present in the pyrochlore structure in the anomalous temperature dependence is also discussed. Copyright © 2012 John Wiley & Sons, Ltd.     

High‐mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma

Pentacene thin‐film transistor with high‐κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm²/V s, much higher than that based on pure La₂O₃ (0.43 cm²/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine‐plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm²/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub‐threshold swing and lowest low‐frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM.

     

High‐performance a‐Si1–xOx:H/c‐Si heterojunction solar cells realized by the a‐Si:H/a‐Si1–xOx:H stack buffer layer

We used amorphous silicon oxide (a‐Si_1–xO_x:H) and microcrystalline silicon oxide (µc‐Si_1–xO_x:H) as buffer layer and p‐type emitter layer, respectively, in n‐type silicon hetero‐junction (SHJ) solar cells. We proposed to insert a thin (2 nm) intrinsic amorphous silicon (a‐Si:H) thin film between the thin (2.5 nm) a‐Si_1–xO_x:H buffer layer and the p‐layer to form a stack buffer layer of a‐Si:H/a‐Si_1–xO_x:H. As a result, a high open‐circuit voltage (V_OC) and a high fill factor (FF) were obtained at the same time. Finally, a high efficiency of 19.0% (J_SC = 33.46 mA/cm², V_OC = 738 mV, FF = 77.0%) was achieved on a 100 μm thick polished wafer using the stack buffer layer.

     

P‐type tin‐oxide thin film transistors for blue‐light detection application

We reported the characteristics of p‐type tin‐oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p‐type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue‐light with a high light/dark read current ratio (I_light/I_dark) of 8.2 × 10³ at a very low driven voltage of <3 V. Since sensing of blue‐light radiation is very critical to our eyes, the proposed p‐type SnO TFTs with high sensitivity toward the blue‐light show great potential for future blue‐light detection applications.

     

Photocatalytic activity of α‐PbO2‐type TiO2

The α‐PbO₂‐type TiO₂ is synthesized under high‐pressure and high‐temperature environment and it shows higher photocatalytic activity as compared to rutile and anatase under UV irradiation. The reduction in α‐PbO₂‐type TiO₂ induces visible‐light photocatalytic activity. These results indicate that α‐PbO₂‐type TiO₂ is an important candidate material for use in a photocatalytic matrix.

     

Magnon contribution to the magnetoresistance of iron nanowires deposited using pulsed electrodeposition

Iron nanowires with a square cross section are grown by pulsed electrodeposition within a newly developed nanochannel template that allows for easy characterization. Measurements of the magnetoresistance as a function of magnetic field and temperature are performed within a large parameter window allowing for the investigation of the magnonic contribution to the magnetoresistance of electrodeposited iron nanowires. Values for the temperature dependent magnon stiffness D (T) are extracted: D (T) = D₀(1 – d₁T²) = 365(1 – 4.4 × 10^–6 · T² · K^–2) meV Ų.

     

Bulk superconductivity in single‐phase Bi3O2S3

We report the synthesis of single‐phase Bi₃O₂S₃ sample and confirm the occurrence of bulk superconductivity with transition temperature at 5.8 K. The Bi₃O₂S₃ superconductor is categorized as typical type‐II superconductor based on the results of both temperature and magnetic field dependences of magnetization. Hall coefficient measurements give evidence of a multiband character, with a dominant conduction mainly by electron‐like charge carriers. The charge carrier density is about 1.45 × 10¹⁹ cm^–3, suggesting that the system has very low charge carrier density.

     

First‐principle investigations of the peculiar magnetic behavior of Sr2FeOsO6

Structural, electronic and magnetic properties of Sr₂FeOsO₆ have been revisited by using the first‐principle calculations. Semiconducting behavior is reproduced. The band gap is 0.09 eV from generalized gradient approximation (GGA) and 0.30 eV by considering both SOC and U, a bit larger than the experimental observed 0.125 eV. In the C‐type antiferromagnetic configuration, spin frustration is found by analysing the magnetic exchange parameters, explaining the experimental observed magnetic complexity.

     

Relic photon temperature versus redshift and the cosmic neutrino background

Presuming that CMB photons are described by the deconfining phase of an SU(2) Yang‐Mills theory with the critical temperature for the deconfining‐preconfining phase transition matching the present CMB temperature K (SU(2)_CMB), we investigate how CMB temperature T connects with the cosmological scale factor a in a Friedmann‐Lemaître‐Robertson‐Walker Universe. Owing to a violation of conformal scaling at late times, the tension between the (instantaneous) redshift of reionisation from CMB observation () and quasar spectra () is repealed. Also, we find that the redshift of CMB decoupling moves from to which questions ΛCDM cosmology at high redshifts. Adapting this model to the conventional physics of three flavours of massless cosmic neutrinos, we demonstrate inconsistency with the value N_eff ～ 3.36 extracted from Planck data. Interactions between cosmic neutrinos and the CMB implies a common temperature T of (no longer separately conserved) CMB and neutrino fluids. N_eff ～ 3.36 then entails a universal, temperature induced cosmic neutrino mass with . Our above results on z_re and z_dec, derived from SU(2)_CMB alone, are essentially unaffected when including such a neutrino sector.

     

Beryllium Silicate,Be2SiO4 (phenakite) – a Novel Trigonal SRS‐Active Crystal

In single crystals of the beryllium silicate Be₂SiO₄ with trigonal symmetry , known also as the mineral phenakite, χ⁽³⁾‐nonlinear lasing by stimulated Raman scattering (SRS) is investigated. All observed Stokes and anti‐Stokes lasing components are identified and ascribed to a single SRS‐promoting vibration mode with ω_SRS ≈876 cm⁻¹. With picosecond single‐wavelength pumping at one micrometer the generation of an octave‐spanning Stokes and anti‐Stokes comb is observed.     

Block antiferromagnetism and possible ferroelectricity in KFe2Se2

Superconductors and multiferroics are two of the hottest branches in condensed matter physics. The connections between those two fields are fundamentally meaningful to unify the physical rules of correlated electrons. Recently, BaFe₂Se₃, was predicted to be multiferroic [Phys. Rev. Lett. 113 , 187204 (2014)] due to its unique one‐dimensional block‐type antiferromagnetism. Here, another iron‐selenide KFe₂Se₂, a parent state of iron‐based superconductor, is predicted to be multiferroic. Its two‐dimensional block‐type antiferromagnetism can generate a moderate electric dipole for each Fe–Se layer via the Fe–Se–Fe exchange striction. Different stacking configurations of these magnetic blocks give closely proximate energies and thus the ground state of KFe₂Se₂ may be switchable between antiferroelectric and ferroelectric phases.

Crystal structure of KFe₂Se₂. (a) Purple: K; green: Se; brown: Fe. Two Fe sheets in a minimum unit cell are indicated as A and B. (b) One Fe–Se layer with magnetism. Brown: spin up; blue: spin down. (c) A side view of Fe–Se bonds. The ionic displacements driven by exchange striction are indicated by arrows.     

Thermally‐activated post‐growth dewetting of fullerene C60 on mica

Understanding and controlling the growth and stability of molecular thin films on solid surfaces is necessary to develop nanomaterials with well‐defined physical properties. As a prominent model system in organic electronics, we investigate the post‐growth dewetting kinetics of the fullerene C₆₀ on mica with real‐time and in situ X‐ray scattering. After layer‐by‐layer growth of C₆₀, we find a thermally‐activated post‐growth dewetting, where the smooth C₆₀‐layer breaks up into islands. This clearly shows that growth is kinetically limited before the system moves over an activation barrier into an energetically favored configuration. From the temperature‐dependent dewetting kinetics we find an effective activation barrier of 0.33 eV, which describes both the temperature‐dependent macroscopic changes in the surface morphology and the microscopic processes of inter‐ and intralayer diffusion during dewetting.