Thermoelectric properties of Bi2Se3/Bi2Te3/Bi2Se3 and Sb2Te3/Bi2Te3/Sb2Te3 quantum well systems

In this work, we develop a theory of thermoelectric transport properties in two-dimensional semiconducting quantum well structures. Calculations are performed for n-type 0.1 wt.% CuBr-doped Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ and p-type 3 wt.% Te-doped Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ quantum well systems in the temperature range 50–600 K. It is found that reducing the well thickness has a pronounced effect on enhancing the thermoelectric figure of merit (ZT). For the n-type Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ with 7 nm well width, the maximum value of ZT is estimated to be 0.97 at 350 K and for the p-type Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ with well width 10 nm the highest value of the ZT is found to be 1.945 at 440 K. An explanation is provided for the resulting higher ZT value of the p-type system compared to the n-type system.     

Thermoelectric Properties of Bi2Te2.7Se0.3 Solid Solution with Various Grain Sizes

Russian Physics Journal - The electrical conductivity (σ) and the coefficients of thermal e.m.f. (α), Holl (RH), and thermal conductivity (χ) of extruded n-Вi2Te2.7Se0.3...     

Doping effects on the thermoelectric properties of Cu-intercalated Bi2Te2.7Se0.3

We herein report an enhancement of the thermoelectric performance of spark plasma sintered polycrystalline n-type Bi₂Te_2.7Se_0.3 by the intercalation of Cu and the doping of Al on Bi-sites. Through the intercalation of a small amount of Cu (0.008), the reproducibility could be significantly improved, with ZT was enhanced from 0.64 to 0.73 at 300 K due to the reduced lattice thermal conductivity benefiting from intensified point-defect phonon scattering. We also found that Al is an effective doping element for power factor enhancement and for reducing the lattice thermal conductivity of Cu-intercalated Bi₂Te_2.7Se_0.3. With these synergetic effects, an enhanced ZT values of 0.78 at 300 K and 0.81 at 360 K were obtained in 1 at% Al-doped Cu_0.008Bi₂Te_2.7Se_0.3 (Cu_0.008Bi_1.98Al_0.02Te_2.7Se_0.3).     

Thermoelectric characteristics of flexible reduced graphene oxide/silver selenide nanowire composites prepared by a facile vacuum filtration process

The reduced graphene oxide/silver selenide nanowire (rGO/Ag₂Se NW) composite powders were fabricated via a wet chemical approach, and then flexible rGO/Ag₂Se NW composite film was prepared by a facile vacuum filtration method combined with cold-pressing treatment. A highest power factor of 228.88 μW·m^-1·K^-2 was obtained at 331 K for the cold-pressed rGO/Ag₂Se NW composite film with 0.01 wt% rGO. The rGO/Ag₂Se NW composite film revealed superior flexibility as the power factor retained 94.62% after bending for 500 times with a bending radius of 4 mm, which might be due to the interwoven network structures of Ag₂Se NWs and pliability of rGO as well as nylon membrane. These results demonstrated that the GO/Ag₂Se NW composite film has a potential for preparation of flexible thermoelectric devices.     

Thermoelectric properties of Li-doped Sr_(0.7)Ba_(0.3)Nb_2O_(6-δ) ceramics

Thermoelectric properties of Li-dopedSr_(0.7)Ba_(0.3)Nb_2O_(6-δ)ceramics were investigated in the temperature range from 323 K to 1073 K. The electrical conductivity increases significantly after lithium interstitial doping. However, both of the magnitudes of Seebeck coefficient and electrical conductivity vary non-monotonically but synchronously with the doping contents, indicating that doped lithium ions may not be fully ionized and oxygen vacancy may also contribute to carriers. The lattice thermal conductivity increases firstly and then decreases as the doping content increases, which is affected by competing factors.Thermoelectric performance is enhanced by lithium interstitial doping due to the increase of the power factor and the thermoelectric figure of merit reaches maximum value(0.21 at 1073 K) in the sample Sr_(0.70)Ba_(0.30)Li_(0.10)Nb_2O_6.     

Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma‐enhanced chemical vapor deposition

A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi₂Te₃ and Sb₂Te₃ thin films was carried out. Obvious microstructural discrepancy in both the as‐deposited Bi₂Te₃ and Sb₂Te₃ thin films was observed when grown on graphene or SiO₂/Si substrate. Bi₂Te₃ and Sb₂Te₃ thin films deposited on the graphene substrate were observed to be grown epitaxially along c‐axis and show very smooth surface compared to that on SiO₂/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.     

高压烧结法制备Bi2Te3纳米晶块体热电性能的研究

用高压烧结法对水热法制备的Bi₂Te₃纳米线及纳米颗粒粉体进行了压制成型, 并与真空热压法制备的样品进行了形貌和热电性能的比较. 研究表明, 高压烧结样品内的晶粒尺寸明显小于热压样品. 热电性能的研究表明, 高压烧结样品的电阻率、赛贝克系数和热导率均优于真空热压样品. 由纳米线粉体高压烧结的样品其热电优值ZT 在室温时达到了0.5, 高于真空热压样品的值, 表明高压烧结是热电材料纳米粉体成型的一种有效方法.     

Thermoelectric and optical properties of CuAlO2 synthesized by direct microwave heating

A single phase of delafossite CuAlO₂ (CAO) was successfully synthesized by a 600 W microwave radiation for 20 min. The CAO sample was composed of quite distorted single-crystalline plates with 200–350 nm thick. Its atomic vibrations were detected at 760 and 550 cm⁻¹ belonging to Al–O and Cu–O stretching, respectively. The direct and indirect energy gaps were respectively determined to be 3.9 and 2.9 eV. The photoluminescence (PL) at room temperature was at 585 nm (2.12 eV) corresponding to the indirect energy gap and at 760 nm (1.63 eV) corresponding to the p-type native defect. For its thermoelectric (TE) properties, the Seebeck coefficient (S) was positive value, with holes as the majority of charge carriers. By increasing of the test temperature, both the electrical resistivity and absolute value of Seebeck coefficient were decreased, but the power factor was in the opposite manner. The dimensionless figure of merit (ZT) of the crystalline CAO was evaluated to be the maximum of 9 × 10⁻³ at 1073 K.     

Structure and electrical properties of Sb2Te3 and Bi0.4Sb1.6Te3 metastable phases obtained by HPHT treatment

We have obtained the metastable phase of the thermoelectric alloy Bi_0.4Sb_1.6Te₃ with electron type conductivity for the first time using the method of quenching under pressure after treatment at P=4.0 GPa and T=400–850 °C. We have consequently performed comparative studies with the similar phase of Sb₂Te₃. The polycrystalline X-ray diffraction patterns of these phases are similar to the known monoclinic structure α-As₂Te₃ (C2/m) with less monoclinic distortion, β ≈ 92°. We have measured the electrical resistivity and the Hall coefficient in the temperature range of T=77?450 K and we have evaluated the Hall mobility and density of charge carriers. The negative Hall coefficient indicates the dominant electron type of carriers at temperatures up to 380 K in the metastable phase of Sb₂Te₃ and up to 440 K in the metastable state of Bi_0.4Sb_1.6Te₃. Above these temperatures, the p-type conductivity proper to the initial phases dominates.     

(Sb2Te3)0.75(1－x)(Bi2Te3)0.25(1－x)(Sb2Se3)x机械合金化粉体的制备及其冷压烧结样品的热电性能研究

采用机械合金化法制备了p型赝三元(Sb₂Te₃-Bi₂Te₃-Sb₂Se₃)合金粉体，对其进行XRD分析表明Te，Bi，Sb，Se单质粉末，经100h球磨后实现了合金化；SEM分析表明所得机械合金化粉体材料颗粒均匀、细小，颗粒尺寸在10nm到100nm量级.使用这种粉体制备了冷压烧结块体样品，在室温下测量了温差电动势率(α)和电导率(σ)，研究了烧结温度对材料热电性能的影响，结果表明在低于300℃的烧结温区，样品室温下的热电性能随烧结温度的升高不断提高，功率因子(α²σ)由未烧结样品的0.59μW cm^-1K^-2升高到在300℃下烧结样品的15.9μW cm^-1K^-2，这一结果对确定材料的最佳烧结温度具有重要意义. 关键词： 赝三元热电材料 机械合金化 冷压 烧结     

熔体旋甩法制备p型填充式方钴矿化合物Ce0.3Fe1.5Co2.5Sb12的微结构及热电性能

采用熔体旋甩法结合放电等离子烧结技术(MS-SPS)制备了p型填充式方钴矿化合物Ce_0.3Fe_1.5Co_2.5Sb₁₂,研究了熔体旋甩工艺对微结构以及热电性能的影响规律.结果表明,较高的铜辊转速和较低的喷气压力有利于提高熔体的冷却速率,使带状产物晶粒细化.薄带经SPS烧结后得到致密、基本单相、晶粒尺寸均匀细小(150—300 nm)的块体.与传统方法制备的试样相比,MS-SPS试样虽然电导率有所降低,但因具有较大的Se 关键词： 熔体旋甩 p型填充式方钴矿化合物 微结构 热电性能     

静电纺丝法制备Bi2Fe4O9及其磁学性能的研究

采用静电纺丝法合成了纤维状的Bi₂Fe₄O₉前驱体,再对前驱体进行热处理得到了棒状的Bi₂Fe₄O₉.通过X射线衍射、扫描电子显微镜及透射电子显微镜表征了合成样品的物相及形貌特征.结果表明合成的样品为Bi₂Fe₄O₉单相,属于正交晶系;退火处理导致纤维状的前驱体转变为棒状的Bi₂Fe₄O₉.紫外-可见吸收光谱表明制备的Bi₂Fe₄O₉对光的吸收范围广,不仅对紫外光具有较强吸收,而且对可见光也有一定的吸收.通过振动样品磁强计测定Bi₂Fe₄O₉磁滞回线研究其磁学特性,相应的矫顽力H_C≈82 Oe（1 Oe=79.5775 A/m）,剥离顺磁信号后的剩磁M_r≈0.25 emu/g,研究发现Bi₂Fe₄O₉样品具有弱铁磁性,并且软磁性能有所提高.     

Availability of water glass/Bi2O3 composites in dielectric and gamma-ray screening applications

ABSTRACT

Sodium silicate (Na₂Si₃O₇) also known as water glass is a very low cost material which is used in many industrial applications such as a builder in detergents, as a binder and adhesive etc. But so far the electrical properties of sodium silicate and its ability to screen radiation have never been investigated. In the present study, the frequency dependent electrical properties and gamma-ray shielding performance of water glass based bismuth oxide composites have been studied for the first time. In accordance with this purpose, Na₂Si₃O₇/Bi₂O₃ glassy composites have been prepared for searching their possible applications in electronics and radiation screening. The surface morphology of the samples have been determined by Scanning Electron Microscope (SEM). The frequency dependent electrical properties such as complex impedance, complex dielectric function and conductivity have been analyzed at room temperature between 1 and 40?MHz. As a result of alternative current (ac) electrical analysis, it has been determined that the Na₂Si₃O₇/Bi₂O₃ composites can be utilized as a dielectric layer in capacitors. On the other hand, since bismuth oxide is an anti-radiative material, the gamma-ray screening parameters such as mass attenuation coefficient, half layer and tenth layer values along with mean free path of the composites have been defined experimentally by using NaI(Tl) scintillation detector for the Ba-133 radiation source at 81 and 356?keV. The values of these parameters have also been checked by Monte–Carlo simulation. Since a good agreement has been assigned between experimental and Monte–Carlo simulation results, the related gamma ray shielding parameters have been determined by Monte–Carlo simulation for other gamma photon energies (140?keV, 208?keV, 468?keV, and 661?keV) which are generated from Tc-99, Lu-177, Ir-132, and Cs-137 sources. Ultimately, Na₂Si₃O₇/Bi₂O₃(35%) composite has been suggested as an eco-friendly, lead-free glassy structured material for the gamma radiation shielding in medical applications.     

热压制备(AgSbTe2)100-x-(GeTe)x合金的热电性能

以Pb粉、Te粉、Ag粉、Ge粉为原材料,在真空气氛下合成(AgSbTe₂)_100-x-(GeTe)_x (x=80---90) (TAGS)合金热电材料, X射线衍射(XRD)分析表明,热压烧结后合金具有低温菱形结构. 通过热压烧结法将TAGS粉末制备成块体材料,运用XRD和扫描电子显微镜对材料的物相成分、 晶体结构和形貌进行了表征.采用直流四探针法测定样品的电导率,当样品两端的温差为1---4℃ 的情况下测量Seebeck系数.通过材料热电性能测试,研究了30---500℃温度范围内不同组分 样品性能参数的变化.结果表明,所制备的TAGS热电材料具有纳米结构, 其性能随着组分的变化而变化, TAGS-80具有较好的热电性能,在530℃时具有最高热电优值(ZT=1.80).     

Zn掺杂n型笼合物Ba8Ga16-2xZnxGe30+x的热电传输特性

用高温熔融结合放电等离子烧结法制备了Zn掺杂单相n型Ba₈Ga_16-2xZn_xGe_30+x笼合物,探索了Zn对Ga的取代对其热电传输特性的影响规律.研究结果表明,n型Ba₈Ga_16-2xZn_xGe_30+x化合物的电导率随着x的增加逐渐增 关键词： 热电传输性能 n型笼合物 框架取代