Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films

In this study, we demonstrate forming‐free and reliable resistive switching (RS) characteristics by controlling the stoichiometry of niobium nitride (NbN_x) films. Compared to a perfect stoichiometric NbN_x film, a decrease of 6% nitrogen content and an increase of 5% O₂ content are found in the sub‐stoichiometric NbN_x sample (s‐NbN_x), and a structural change for the s‐NbN_x film is observed from X‐ray diffraction results, which results in the possibility of abundant defect generation in the s‐NbN_x film at virgin state. In the RS test, the s‐NbN_x film normally carries out well without initial forming because of the already‐formed conducting filaments; in particular, in the reliability study, the s‐NbN_x film shows more stable dc cycling characteristics for 1000 cycles without any degradation and smaller variations in the operating current and voltage characteristics. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Characteristics and mechanism of nano‐polycrystalline La2O3 thin‐film resistance switching memory

We investigated the characteristics and the mechanism of Pt/La₂O₃/Pt resistance switching memory with a set of measurements. The La₂O₃ films were determined as nano‐poly‐crystalline (diameter of the nanocrystals 5–10 nm) by XRD and HRTEM analysis. The Pt/La₂O₃/Pt device exhibited excellent resistive switching properties, including low switching voltage (<2 V), large low/high resistance ratio (>10⁸), and good cycling endurance property. The conduction mecha‐ nisms of the Pt/La₂O₃/Pt device were revealed with current–voltage characteristics, which are different in the low and high resistance states. Furthermore, XPS analysis and temperature‐dependent resistance measurement in the low resistance state showed that the conducting filaments in the Pt/La₂O₃/Pt device are mainly affected by oxygen defects rather than metallic La. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process

The improvement of resistive switching (RS) phenomena of silicon‐nitride (SiN_x)‐based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un‐doped SiN_x films, the oxygen doped SiN_x (SiN_x:O₂)‐based ReRAM cells show a lower current (～0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiN_x:O₂ film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiN_x films can effectively improve the RS characteristics of SiN_x‐based ReRAM cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ni/HfO_2/Pt阻变单元特性与机理的研究

研究了Ni/HfO2(10 nm)/Pt存储单元的阻变特性和机理.该器件具有forming-free的性质,还表现出与以往HfO2(3 nm)基器件不同的复杂的非极性阻变特性,并且具有较大的存储窗口值(105).存储单元的低阻态阻值不随单元面积改变,符合导电细丝阻变机理的特征.采用X射线光电子能谱仪分析器件处于低阻态时的阻变层HfO2薄膜的化学组分以及元素的化学态,结果表明,Ni/HfO2/Pt阻变存储器件处于低阻态时的导电细丝是由金属Ni导电细丝和氧空位导电细丝共同形成的.     

基于Cu/SiO_x/Al结构的阻变存储器多值特性及机理的研究

采用氧化硅材料构建了Cu/SiOx/Al的三明治结构阻变存储器件.用半导体参数分析仪对其阻变特性进行测量,结果表明其具有明显的阻变特性,并且通过调节限制电流,得到了四个稳定的阻态,各相邻阻态的电阻比大于10,并且具有良好的数据保持能力.在不同温度条件下对各个阻态进行电学测试及拟合,明确了不同阻态的电子传输机理不尽相同:阻态1和阻态2为欧姆传导机制,阻态3为P-F(Pool-Frenkel)发射机制,阻态4为肖特基发射机制.根据电子传输机制,建立了铜细丝导电模型并对Cu/SiOx/Al阻变存储器件各个阻态的电致阻变机制进行解释.     

Investigation of resistive switching behaviours in WO3-based RRAM devices

In this paper, a WO₃-based resistive random access memory device composed of a thin film of WO₃ sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO₃/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.     

Interface‐engineered resistive memory using plasma‐modified electrode on polyimide substrate

In this study, we report a low power Ni/GeO_x /TiO_y /TaN resistive random access memory (RRAM) using plasma‐modified electrode. The low sub‐mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high‐temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta–N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high‐temperature current distribution.

     

氧分压对Ni/HfO_x/TiN阻变存储单元阻变特性的影响

采用射频磁控溅射的方法,基于不同氧分压制备的氧化铪构建了Ni/HfO_x/TiN结构阻变存储单元.研究发现,随着氧分压的增加,薄膜表面粗糙度略有降低;另一方面,阻变单元功耗降低,循环耐受性能可达10~3次,且转变电压分布的一致性得到改善.结合电流-电压曲线线性拟合结果及外加温度测试探究了器件的转变机理,得出在低阻态的传导机理为欧姆传导机理,在高阻态的传导机理为肖特基发射机理,并根据氧空位导电细丝理论,对高低阻态的阻变机理进行了详细的理论分析.     

Thickness‐dependent electroforming behavior of ultra‐thin Ta2O5 resistance switching layer

Electroforming behaviours of Ta₂O₅ resistance switching memory cell with a diameter of 28 nm and different thickness (0.5–2.0 nm) of Ta₂O₅ layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta₂O₅ thickness. The electroforming with negative bias to top TiN electrode was ascribed to electric field‐ driven migration of oxygen vacancies, originally residing near the bottom interface, toward the top electrode interface and formation of conducting filaments. The estimated electroforming energy (0.094–0.14 eV) was favourably compared with the hopping energy of electrons from the V_O site to a nearby Ta site. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature

In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin‐film transistor (TFT) using room‐temperature processed Y₂O₃/TiO₂/Y₂O₃ gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub‐threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm²/V s, and a large I_on/I_off ratio of 1.7 × 10⁶. The low operation voltage, small sub‐threshold swing and high mobility could be ascribed to the combination of high‐κ TiO₂ and large band gap Y₂O₃, which provide the potential to meet the requirements of low‐temperature and low‐power portable electronics.

     

前驱溶液的PH值对Y2O3: Eu3＋荧光粉发光性质的影响

以甘氨酸为燃料,采用溶液燃烧法制备了Y2O3:Eu3 (3%)纳米粉末,并研究了制备过程中前驱溶液的pH值对Y2O3:Eu3 发光性质的影响.从XRD和SEM分析得到,随着溶液pH值的增大,样品颗粒逐渐变大,并且多孔粉末变得越来越致密.通过对样品发光性质的测量得到,随着pH值的增大,样品发光逐渐增强,但寿命逐渐变短.激发谱显示,基质吸收和电荷迁移带的相对强度比随着pH值的增大逐渐减小.     

Dynamic moderation of an electric field using a SiO2 switching layer in TaOx ‐based ReRAM

ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 10² or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra‐thin SiO₂ layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaO_x matrix, resulting in repeated switching while retaining a higher on/off ratio of about 10⁵. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Er^3＋：Y2O3透明陶瓷制备及发光性质研究

以Y2O3为基质材料,掺杂不同含量的Er3 ,采用共沉淀法制备出性能良好的Er3 :Y2O3纳米粉,并将粉体在1 700℃和真空度为1×10-3Pa下烧结8 h得到Er3 :Y2O3透明陶瓷.用X射线衍射仪(D/MAX-RB)、透射电子显微镜(EM420)、自动记录分光光度计(DMR-22)、荧光分析仪(F-4500)和发射波长为980 nm的半导体激光器分别对样品的结构、形貌和发光性能进行了研究.结果表明:Er3 完全固溶于Y2O3的立方晶格中,Er3 :Y2O3粉体大小均匀,近似球形,尺寸约40～60 nm左右.Er3 :Y2O3透明陶瓷相对密度为99.8%,在长波长范围内其透光率超过60%,在波长为980 nm的激光下有两个上转换发光带,其中绿色发光中心波长位于562 nm,红色发光中心波长位于660 nm,分别对应4S3/2/2H11/2→4I15/2和4F9/2→4I15/2的跃迁;随着铒浓度的提高颜色从绿色向红色转变,Er3 的掺杂浓度不宜超过2%,超过这个范围,对材料发光强度的增强作用反而很小.     

光谱纯Y2O3,La2O3,Lu2O3中微量杂质的光致发光谱研究

测定了光谱纯稀土化合物Ｙ２Ｏ３，Ｌａ２Ｏ３，Ｌｕ２Ｏ３中微量杂质在４８８．０ｎｍ和５１４．５ｎｍ激光线激发下的光致发光谱以及在可见光４４５～７４１ｎｍ范围内吸收谱，Ｙ２Ｏ３，Ｌｕ２Ｏ３样品在４４８．０ｎｍ和５１４．５ｎｍ激光激发下都有发光效应，而Ｌａ２Ｏ３样品只在４８８．０ｎｍ激光激发下才发光，分析了结果表明，Ｙ２Ｏ３，Ｌａ２Ｏ３，Ｌｕ２Ｏ３的发光谱分别是由其存在的微量Ｅｒ＾３＋，Ｓｍ＾３＋和Ｅｕ     

缺陷分布对Ag-SiO2薄膜电阻翻转效应的影响

通过改变制备条件,研究了Ag-SiO₂薄膜中的缺陷对电阻翻转效应的影响.对比不同的热处理实验条件, 发现在120 ℃退火的样品经forming过程后具有稳定的电阻转变特性;另一方面, 在Ar/O₂混合气氛下生长的SiO₂具有比在纯Ar下生长的样品更加稳定、重复的电阻转变特性. 通过实验分析,表明热处理、电场作用和样品制备气氛可以改变、调节样品中的缺陷分布 (Ag填隙原子和氧空位缺陷),从而导致Ag-SiO₂中基于缺陷的导电通道结构的形成和湮灭, 提出了提高电阻翻转稳定性的必要条件.     

原材料Y_2O_3的结晶性对Y_2O_2S∶Eu~(3+)发光特性的影响

为进一步提高Y2O2S∶Eu3+的发光性能,采用改善主要原材料Y2O3结晶性的方法,使Y2O2S∶Eu3+红色荧光粉在20 kV和25 kV下发光强度分别增强5%和10%,且不影响色度、粒度、粉体分散性等主要考核指标。提高了粉体的耐电压特性(发射强度与激发电压间的关系特性)。讨论和分析了发射强度增强、电压特性改善的原因:主要原材料Y2O3的结晶性的改善,使得合成的Y2O2S∶Eu3+具有更好的晶体质量,Eu3+离子晶场环境得到进一步改善,从而减弱了无辐射过程及因晶格畸变所造成的能量损失,发光效率得到增强,电压特性得到改善。实验表明,获取高质量多晶Y2O3的最佳分解温度为1400℃左右。     

Gd~(3+),Tm~(3+)和Yb~(3+)掺杂的Y_2O_3微晶中Gd~(3+)离子的紫外上转换发光及其增强的研究

采用均相沉淀法制备了Y(OH)3微米颗粒,经1 100℃焙烧后制备出具有上转换发光性质的Yb3+-Tm3+-Gd3+共掺的Y2O3微米晶体,讨论了Yb3+-Tm3+-Gd3+在Y2O3中能量传递过程及壳层对发光强度的影响。980 nm近红外光激发下的上转换光谱表明,在Yb3+-Tm3+-Gd3+共掺Y2O3体系中,核-壳结构大幅提高了Gd3+离子和Tm3+离子的上转换发光强度,尤其是样品在紫外发光部分的增强相比于可见和红外光部分更为明显。同时,通过研究Tm3+和Gd3+在不同波段的发光强度与泵浦功率的关系探讨了氧化物中上转换发光的机制。     

Improvement of resistive switching fluctuations by using one step lift‐off process

Bipolar resistive switching characteristics are investigated in ZrO₂ containing Cu thin layer devices, particularly for the self‐isolated‐structure device fabricated by one step lift‐off process. Compared with the traditional‐structure device, the self‐isolated‐structure device shows more uniform resistive switching characteristics. This is because the isolation of each device cell has negligible influence on each other and thus mitigates possible crosstalk between each cell. These results suggest that the feasibility of good stabilization of the resistive switching parameters can be obtained through one step lift‐off process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)