GaAs processed using gallium-focused ion beams for the fabrication of photonic devices mostly results in gallium nanodots on the surface. These gallium nanodots may produce unwanted effects and deteriorate the optical and electrical properties of the devices. We have investigated the FIB processing of GaAs with and without exposure to an insulator-enhanced etching precursor gas (XeF2) to explore the use of XeF2 during GaAs processing. It is reported that without the gas, FIB processing results in nanodots on the surface that vary in size and density depending on processing parameters such as incident energy, beam current, angle and dwell time. Processing with insulator (XeF2)-enhanced etching gas irrespective of the process parameters eliminates the nanodots and results in a smooth surface, as characterized by scanning electron microscopy and atomic force microscopy. This method will be useful for surfaces which require dry processing without exposure to any wet chemical etching. 相似文献
We characterized the surface defects in a-plane GaN, grown onto r-plane sapphire using a defect-selective etching (DSE) method. The surface morphology of etching pits in a-plane GaN was investigated by using different combination ratios of H3PO4 and H2SO4 etching media. Different local etching rates between smooth and defect-related surfaces caused variation of the etch pits made by a 1:3 ratio of H3PO4/H2SO4 etching solution. Analysis results of surface morphology and composition after etching by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that wet chemical etching conditions could show the differences in surface morphology and chemical bonding on the a-plane GaN surface. The etch pits density (EPD) was determined as 3.1 × 108 cm−2 by atom force microscopy (AFM). 相似文献
We present a new fabrication technique to produce three-dimensional (3D) microstructures on crystalline substrate using selective
ion implantation and chemical etching. Localized lattice-damage layers at the specified depth beneath the substrate surface
are formed by selective ion implantation. After etching out the partial surface regions and the buried lattice-damage layers
by chemical etching, the 3D crystalline microstructures are produced. This technique is demonstrated on LiNbO3 crystal to produce undercutting and free-standing microstructures, including microwire, microring, and microdisk. The measurement
results of micro-Raman spectra show that the used fabrication process does not affect the original crystalline structure.
The features of this technique include smooth structure surface, large undercutting range, and auto-etching stop. By using
multiple implantations or repeating the proposed process several times, versatile 3D crystalline microstructures can be produced. 相似文献
Femtosecond laser machining has been widely used for fabricating arbitrary 2.5 dimensional (2.5D) structures. However, it suffers from the problems of low fabrication efficiency and high surface roughness when processing hard materials. To solve these problems, we propose a dry‐etching‐assisted femtosecond laser machining (DE‐FsLM) approach in this paper. The fabrication efficiency could be significantly improved for the formation of complicated 2.5D structures, as the power required for the laser modification of materials is lower than that required for laser ablation. Furthermore, the surface roughness defined by the root‐mean‐square improved by an order of magnitude because of the flat interfaces of laser‐modified regions and untreated areas as well as accurate control during the dry‐etching process. As the dry‐etching system is compatible with the IC fabrication process, the DE‐FsLM technology shows great potential for application in the device integration processing industry.
Lift‐off protocols for thin films for improved extended X‐ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand‐alone high‐quality micrometer‐thin films are obtained. Protocols for the single‐crystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semiconductors GaAs, GeSi and InP and the dielectric materials SiO2 and Si3N4 are presented. The removal of the substrate and the ability to stack the thin films yield benefits for EXAFS experiments in transmission as well as in fluorescence mode. Several cases are presented where this improved sample preparation procedure results in higher‐quality EXAFS data compared with conventional sample preparation methods. This lift‐off procedure can also be advantageous for other experimental techniques (e.g. small‐angle X‐ray scattering) that benefit from removing undesired contributions from the substrate. 相似文献
Mechanical grinding, chemical mechanical polishing (CMP) and dry etching process are integrated to remove sapphire substrate for fabricating thin-film light-emitting diodes. The thinning of sapphire substrate is done by fast mechanical grinding followed by CMP. The CMP can remove or reduce most of the scratches produced by mechanical grinding, recovering both the mechanical strength and wafer warpage to their original status and resulting in a smoother surface. The surface morphology and surface roughness on grinded and polished sapphire substrate are measured by using atomic force microscopy (AFM). The etch rates of sapphire by BCl3-based dry etching are reported. Pattern transfer to the physical and chemical stability of sapphire is made possible by inductively coupled plasma (ICP) etch system that generates high density plasma. The patterning of several microns period in sapphire wafer by using a combination of BCl3/Ar plasma chemistry and SiO2 mask is presented. The anisotropic etch profile formed on sapphire wafer is obtained from scanning electron microscopy (SEM) images. 相似文献
A method, combining micro-contact printing (μCP), wet chemical etching and reactive ion etching (RIE), is reported to fabricate microstructures on Si and SiOx. Positive and negative structures were generated based on different stamps used for μCP. The reproducibility of the obtained microstructures shows the methodology reported herein could be useful in Micro-Electro-Mechanical Systems (MEMS), optical and biological sensing applications. 相似文献
Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi‐component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal‐assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result.
The CIGS thin film surface morphology before and after the wet chemical etching. Grain boundaries are well defined after the processing. 相似文献
In the silicon wet etching process, the “pseudo-mask” formed by the hydrogen bubbles generated during the etching process is the reason causing high surface roughness and poor surface quality. Based upon the ultrasonic mechanical effect and wettability enhanced by isopropyl alcohol (IPA), ultrasonic agitation and IPA were used to improve surface quality of Si (1 1 1) crystal plane during silicon wet etching process. The surface roughness Rq is smaller than 15 nm when using ultrasonic agitation and Rq is smaller than 7 nm when using IPA. When the range of IPA concentration (mass fraction, wt%) is 5–20%, the ultrasonic frequency is 100 kHz and the ultrasound intensity is 30–50 W/L, the surface roughness Rq is smaller than 2 nm when combining ultrasonic agitation and IPA. The surface roughness Rq is equal to 1 nm when the mass fraction of IPA, ultrasound intensity and the ultrasonic frequency is 20%, 50 W and 100 kHz respectively. The experimental results indicated that the combination of ultrasonic agitation and IPA could obtain a lower surface roughness of Si (1 1 1) crystal plane in silicon wet etching process. 相似文献
We propose and demonstrate a novel technique for the fabrication of quantum dot (QD) structures using metal organic chemical vapor deposition (MOCVD). The GaAs quantum dots are grown at the bottom of the two-dimensional V-groove (2DVG) structures which are composed of (1 1 1)A and (1 1 1)B-facets on GaAs(1 0 0). The 2DVG is formed by MOCVD selective growth on a SiO2 patterned substrate. It should be noted that the 2DVGs cannot be formed by a chemical wet etching technique because the facet's anisotropy of etching ratios are different. By changing the growth condition, we can obtain GaAs QD structures which have a size of less than 10 nm, and vertical GaAs quantum wires (V-QWRs) in 2DVGs. We have observed photoluminescence from each structure. We have also demonstrated stacking of GaAs QDs in the 2DVG on GaAs (1 0 0). 相似文献
A microelectromechanical system is created that has the form of a cantilever-fitted microbar with a cross-sectional area of
several square micrometers. The system is formed by applying epitaxial AlGaAs layers on the GaAs(001) surface and selective
chemical etching of the AlAs layer lying under the bar. Two micro-cantilevers that are made on the same GaAs(001) wafer and
directed along the [110] and [1$
\bar 1
$
\bar 1
0] orthogonal diagonal axes are studied. The static and dynamic characteristics of the systems are studied by white light
optical interferometry. The deflection of the bars as a function of the applied voltage is measured in the static mode. An
opposite shift of orthogonal microcantilevers on which the same voltage is applied is considered as direct evidence of the
efficiency of a piezoeffect-based microengine. The calculated parameters of the micro-electromechanical system, the sensitivity
and eigenfrequency, are in good agreement with the measurements. 相似文献
Internal modification of transparent materials such as glass can be carried out using multiphoton absorption induced by a femtosecond (fs) laser. The fs‐laser modification followed by thermal treatment and successive chemical wet etching in a hydrofluoric (HF) acid solution forms three‐dimensional (3D) hollow microstructures embedded in photosensitive glass. This technique is a powerful method for directly fabricating 3D microfluidic structures inside a photosensitive glass microchip. We used fabricated microchips, referred to as a nanoaquarium, for dynamic observations of living microorganisms. In addition, the present technique can also be used to form microoptical components such as micromirrors and microlenses inside the photosensitive glass, since the fabricated structures have optically flat surfaces. The integration of microfluidics and microoptical components in a single glass chip yields biophotonic microchips, in other words, optofluidics, which provide high sensitivity in absorption and fluorescence measurements of small volumes of liquid samples. 相似文献
The development of efficient metal‐free electrocatalysts for oxygen electrocatalysis is of great significance for various energy conversion devices. Herein, novel nitrogen‐doped holey graphene nanocapsules (NHGNs) are reported prepared by self‐assembly of graphene oxide nanosheets on the surface of amino‐functionalized silica template and NH3 activation with simultaneously enhanced nitrogen doping and etching of nanopores in graphene, followed by template etching. The silica template is demonstrated to show a substrate‐enhanced effect on nitrogen doping and etching of nanopores in graphene based on density functional theory calculations. Benefiting from the large surface area, unique pore distribution, and high surface functionality of nitrogen doping, the resulting NHGNs exhibit superior bifunctional electrocatalytic activity and durability for both oxygen reduction reaction and oxygen evolution reaction, which is similar to that of the commercial Pt/C and RuO2 electrocatalysts, respectively. This work presents an advance in developing new nitrogen‐doped graphene species for highly efficient metal‐free electrocatalysis. 相似文献