Resistive switching effects in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3/Pt heterostructures prepared by pulse laser deposition method

The heterostructural junctions of CeO₂/La_0.7(Sr_0.1Ca_0.9)_0.3MnO₃/Pt (CeO₂/LSCMO/Pt) were prepared using pulse laser deposition technique. Their resistive switching (RS) behavior was investigated. As compared to the metal/manganite/Pt junction, the CeO₂/LSCMO/Pt device displayed an improved switching characteristic. The RS effects with characteristics of bipolar, threshold, and complementary were realized by adjusting the thicknesses of the CeO₂ layer in the CeO₂/LSCMO/Pt junctions. Under a higher external bias voltage, the threshold and complementary switching modes of the junctions could turn into bipolar switching mode. The switching behavior shows strong dependence on the O₂ partial pressure during the fabrication, indicating that the amount and behavior of the oxygen at the interface play an important role in the determination of the RS behavior. The observed switching behavior is related to the modification of the accumulation/depletion layers as well as the interfacial potential barrier due to the migration of the oxygen vacancies.     

Metal and annealing atmospheres dependence of resistive switching in metal/Nb0.7wt%-SrTiO3 interfaces

We investigated the resistance switching (RS) effect of metal/Nb-doped SrTiO₃ interfaces under different treating conditions. Two types of I–V characteristics appeared due to the modification of Schottky-like barrier and the formation of insulating layer. According to X-ray photoelectron spectroscopy analysis, the change in interface potential barrier was contributed to the migration of oxygen vacancies and electrons trapping/detrapping of carriers in the vicinity of interface. Nonlinear fitting is applied to the curves to study the conduction mechanism of metal/NSTO. For “barrier height” style, Schottky emission and Poole–Frenkel (P–F) emission are dominating; for “insulating layer” style, space-charge-limited current, controls the conduction.     

In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides

Oxide materials with resistance hysteresis are very promising for next generation memory devices. However, the microscopic dynamic process of the resistance change is still elusive. Here, we use in situ transmission electron microscopy method to study the role of oxygen vacancies for the resistance switching effect in cerium oxides. The structure change during oxygen vacancy migration in CeO₂ induced by electric field was in situ imaged inside high-resolution transmission electron microscope, which gives a direct evidence for oxygen migration mechanism for the microscopic origin of resistance change effect in CeO₂. Our results have implications for understanding the nature of resistance change in metal oxides with mixed valence cations, such as fluorite, rutile and perovskite oxides.     

Bipolar resistive switching in Cr-doped TiOx thin films

The electric-pulse-induced resistive switching effect is studied for Ti_0.85Cr_0.15O_x (TCO) films grown on Ir—Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse-induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.     

Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices

Bilayer CeO₂/TiO₂ films with high-k dielectric property were prepared by rf magnetron sputtering technique at room temperature. Effect of annealing treatment on resistive switching (RS) properties of bilayer CeO₂/TiO₂ films in O₂ ambient at different temperature in the range of 350–550 °C was investigated. Our results revealed that the bilayer films had good interfacial property at 500 °C and this annealing temperature is optimum for different RS characteristics. Results showed that bilayer CeO₂/TiO₂ film perform better uniformity and reliability in resistive switching at intermediate temperature (i.e. 450 °C and 500 °C) instead of low and high annealing temperature (i.e. 350 °C and 550 °C) at which it exhibits poor crystalline structure with more amorphous background. Less Gibbs free energy of TiO₂ as compared to CeO₂ results in an easier re-oxidation of the filament through the oxygen exchange with TaN electrode. However, the excellent endurance property (>2500 cycles), data retentions (10⁵ s) and good cycle-to-cycle uniformity is observed only in 500 °C annealed devices. The plots of cumulative probability, essential memory parameter, show a good distribution of Set/Reset voltage.     

Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films

In this work, 150 nm thick polycrystalline BaTiO₃ (BTO) films were deposited on Pt/TiO₂/SiO₂/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current–voltage (I–V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P–V loops with remnant polarization (P_r) of 5.7 μC/cm² and a coercive electric field (E_c) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.     

Reversible resistance switching properties in Ti-doped polycrystalline Ta2O5 thin films

Unipolar reversible resistance switching effects were found in 5 at% Ti-doped polycrystalline Ta₂O₅ films with the device structure of Pt/Ti–Ta₂O₅/Pt. Results suggest that the recovery/rupture of the conductive filaments which are involved in the participation of oxygen vacancies and electrons leads to the resistance switching process. Ti-doped Ta₂O₅ thin films possess higher resistance whether in low-resistance state or high-resistance state and higher resistance switching ratio than Ta₂O₅ thin films, where Ti addition plays an important role in the resistance switching process by suppressing the migration of oxygen vacancies via forming an electrically inactive Ti/O–vacancy complex. Excellent retention properties of the high and low resistances under constant stress of applied voltage were obtained.     

Temperature-dependent resistive switching behavior in the structure of Au/Nb:SrTiO3/Ti

Au/Nb:SrTiO₃/Ti structures were fabricated by depositing Au and Ti electrodes on a single crystal 0.5 wt% Nb:SrTiO₃ (NSTO) using rf-magnetron sputtering technique. Resistive switching properties at different temperature were investigated. The Ti/NSTO interface was ohmic contact, which indicated that the resistive switching behavior was attributed to Au/NSTO interface. The resistive switching behavior happened only at the temperature above 180 K, which was possibly caused by the increase of Schottky barrier height with the increase of temperature. The structure showed a semiconductor behavior at high-resistance state (HRS) and a metallic behavior at low-resistance state (LRS). The switching conduction mechanism of Au/NSTO/Ti device is primarily described as space-charge-limited conduction (SCLC) according to the electrical transport properties measurement.     

Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

We report that fully transparent resistive random access memory(TRRAM) devices based on ITO/TiO2/ITO sandwich structure,which are prepared by the method of RF magnetron sputtering,exhibit excellent switching stability.In the visible region(400-800 nm in wavelength) the TRRAM device has a transmittance of more than 80%.The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage,while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability.The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO 2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.     

Fe doping induced enhancement in room temperature ferromagnetism and selective cytotoxicity of CeO2 nanoparticles

In the present study, structural, optical, magnetic properties as well as cytotoxicity of undoped and Fe doped Ceria (CeO₂) nanoparticles synthesized by simple soft chemical method have been reported. SEM and XRD results have shown that the synthesized samples are comprised of ultrafine spherical nanoparticles having single phase cubic fluorite structure of CeO₂. Raman spectroscopy results have depicted a red shift in F_2g mode with Fe doping which reveals enhancement in the oxygen vacancies. The optical band gap calculated from UV–visible absorption spectra has been found to vary unsystematically with Fe doping which is associated with the creation of impurity level and abundance in oxygen vacancies with Fe doping. The oxygen vacancies have introduced the room temperature ferromagnetism (RTFM) in undoped and Fe doped CeO₂ nanoparticles. The saturation magnetization (M_s) value of pristine CeO₂ nanoparticles has been found to be 0.00083 emu/g which is increased up to 0.0126 emu/g for 7% Fe doped nanoparticles. For cytotoxicity tests, the synthesized nanoparticles induced effects on Neuroblastoma cancer cells & HEK-293 healthy cells have been analyzed via CCK-8 analysis. It has been observed that the prepared undoped and Fe doped CeO₂ nanoparticles have nontoxic nature towards healthy cells while they are extremely toxic towards cancerous cells. Furthermore, the anticancer activity is found to enhance with Fe doping. The selective toxicity and enhancement in anticancer activity with Fe doping has observed to be strongly correlated with reactive oxygen species (ROS) generation.     

Lattice distortion and corresponding changes in optical properties of CeO2 nanoparticles on Nd doping

Doping of Nd distorts the lattice structure of CeO₂, increases the lattice strain and expands the lattice. Oxygen vacancies and other ceria related defects contribute to the lattice strain. Shifting and broadening of the F_2g Raman peak of doped sample, compared to pure CeO₂, is indicative of local structure distortion on doping. Dopant induced enhancement of oxygen vacancies, in the CeO₂ lattice, is further confirmed by the generation of a new Raman peak at 543 cm^?1 that is otherwise absent in the pure one. UV–vis spectroscopy gives an understanding of the different types of f–f electronic transition of Nd in the crystalline environment of CeO₂. Effective band gap of CeO₂ reduces upto Nd concentration of 2.5%. The band gap, however, increases at 4% of Nd due to Burstein–Moss shift. Photoluminescence intensity of pure CeO₂ decreases with Nd concentration owing to the increase in the number of non radiative oxygen vacancies. These vacancies act as luminescence quencher and reduce the emission intensity. Photoluminescence excitation spectra confirm the presence of these oxygen vacancies in the CeO₂ nanocrystallites.     

Effects of oxygen vacancies on the room-temperature ferromagnetism of Co-doped polycrystalline CeO2

Pure and Co-doped single-phase CeO₂ crystals were synthesized by a solid-state reaction method. Samples of different oxygen vacancy concentration were studied, including (1) as-sintered crystals, (2) powders ground from the same crystal, and (3) a cold-pressed pellet from the ground powder that was unannealed and annealed at 800 °C. By analyzing the magnetic behaviors, surface/volume ratio and O vacancy concentration, the effects of oxygen vacancies on the room-temperature ferromagnetism (RT-FM) of Co-doped CeO₂ were systematically investigated. The results confirm that the RT-FM observed in Co-doped CeO₂ has a direct relationship with the oxygen vacancy concentration, and support the oxygen vacancy mediated FM mechanism.     

Oxygen reduction reactions in the SOFC cathode of Ag/CeO2

The interactions between oxygen molecules and a silver surface or a CeO₂(111) supported atomic layer of silver are predicted using first-principles calculations based on spin polarized DFT with PAW method. The juncture between the CeO₂(111), the atomic layer of silver, and O₂ represents a triple-phase boundary (TPB) whereas the interface between silver surfaces and O₂ corresponds to a 2-phase boundary (2PB) in a solid oxide fuel cell (SOFC). Results suggest that the O₂ dissociation process on a monolayer of silver supported by CeO₂(111) surfaces (or TPB) with oxygen vacancies has lower reaction barrier than on silver surfaces (or 2PB), and the dissociated oxygen ions can quickly bond with subsurface Ce atom via a barrierless and highly exothermic reaction. The oxygen vacancies at TPB are found to be responsible for the lower energy barrier and high exothermicity because of the strong interaction between subsurface Ce and adspecies, implying that oxygen molecules prefer being reduced at TPB than on silver surfaces (2PB). The results suggest that, for a silver-based cathode in a SOFC, the adsorption and dissociation of oxygen occur rapidly and the most stable surface oxygen species would be the dissociated oxygen ion with − 0.78|e| Bader charges; the rate of oxygen reduction is most likely limited by subsequent processes such as diffusion or incorporation of the oxygen ions into the electrolyte.     

Oxygen vacancy‐induced microstructural changes of annealed CeO2−x nanocrystals

Nanocrystalline ceria (CeO₂) is known for its ionic conductivity and oxygen storage properties, which depend on the presence of oxygen ion vacancies. The vacancies cause several important changes in CeO₂ involving microstrain, electronic structure, magnetic properties, etc. In this article, we focus our attention to the microstructural changes of nanocrystalline CeO_2−x annealed at different temperatures in the range 200–500 °C. Structural and vibrational properties were investigated by X‐ray diffraction and Raman spectroscopy. It was observed that the content of oxygen vacancies changed significantly with increasing annealing temperature, which plays an important role in the observed microstructural changes of the annealed samples. We demonstrate that the observed microstrain changes, because of variable defect content, dominate over the crystallite size effect. This finding is opposite to the conclusions made by several other authors. A new mode, classified as a probable surface mode, was observed in the Raman spectra at ∼480 cm⁻¹, the appearance of which can be explained by the large defective structure and disorder in the ceria lattice. Copyright © 2011 John Wiley & Sons, Ltd.     

Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process

The improvement of resistive switching (RS) phenomena of silicon‐nitride (SiN_x)‐based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un‐doped SiN_x films, the oxygen doped SiN_x (SiN_x:O₂)‐based ReRAM cells show a lower current (～0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiN_x:O₂ film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiN_x films can effectively improve the RS characteristics of SiN_x‐based ReRAM cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

Based on the bipolar resistive switching (RS) characteristics of SnO₂ films, we have fabricated a new prototypical device with sandwiched structure of Metal/SnO₂/fluorine-doped tin oxide (FTO). The SnO₂ microspheres film was grown on FTO glass by template-free hydrothermal synthesis, which was evaporated with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au), respectively. Typical self-rectifying resistance switching behaviors were observed for the RS devices with Al and Au electrodes. However, no obvious rectifying resistance switching behavior was observed for the RS device with Ag electrode. Above results were interpreted by considering the different interface barriers between SnO₂ and top metal electrodes. Our current studies pave the ways for modulating the self-rectifying resistance switching properties of resistive memory devices by choosing suitable metal electrodes.     

Understanding CeO2‐Based Nanostructures through Advanced Electron Microscopy in 2D and 3D

Engineering morphology and size of CeO₂‐based nanostructures on a (sub)nanometer scale will greatly influence their performance; this is because of their high oxygen storage capacity and unique redox properties, which allow faster switching of the oxidation state between Ce⁴⁺ and Ce³⁺. Although tremendous research has been carried out on the shape‐controlled synthesis of CeO₂, the characterization of these nanostructures at the atomic scale remains a major challenge and the origin of debate. The rapid developments of aberration‐corrected transmission electron microscopy (AC‐TEM) have pushed the resolution below 1 Å, both in TEM and in scanning transmission electron microscopy (STEM) mode. At present, not only morphology and structure, but also composition and electronic structure can be analyzed at an atomic scale, even in 3D. This review summarizes recent significant achievements using TEM/STEM and associated spectroscopic techniques to study CeO₂‐based nanostructures and related catalytic phenomena. Recent results have shed light on the understanding of the different mechanisms. The potential and limitations, including future needs of various techniques, are discussed with recommendations to facilitate further developments of new and highly efficient CeO₂‐based nanostructures.     

Study of anti-clockwise bipolar resistive switching in Ag/NiO/ITO heterojunction assembly

The anti-clockwise bipolar resistive switching in Ag/NiO/ITO (Indium–Tin–Oxide) heterojunctional thin film assembly is investigated. A sequential voltage sweep in 0 → V _max → 0 → ?V _min → 0 order shows intrinsic hysteresis behaviour and resistive switching in current density (J)–voltage (V) measurements at room temperature. Switching is induced by possible rupture and recovery of the conducting filaments in NiO layer mediated by oxygen ion migration and interfacial effects at NiO/ITO junction. In the high-resistance OFF-state space charge limited current passes through the filamentary path created by oxygen ion vacancies. In OFF-state, the resistive switching behaviour is attributed to trapping and detrapping processes in shallow trap states mostly consisting of oxygen vacancies. The slope of Log I vs Log V plots, in shallow trap region of space charge limited conduction is ~2 (I ∝ V ²) followed by trap-filled and trap-free conduction. In the low-resistance ON-state, the observed electrical features are governed by the ohmic conduction.     

Raman characterization before and after rapid thermal annealing of CeO2 thin films grown by rf sputtering on (111) Si

We investigated by Raman spectroscopy (RS) the crystalline quality of CeO₂ thin films radio frequency magnetron sputtered on n‐type (111) Si substrates from CeO₂ target. The deposition temperature was in the range of 200–800 °C. We also realized structural investigations on CeO₂ layers after Rapid Thermal Annealing (RTA) performed in the range of 750–1000 °C for 30 s under nitrogen atmosphere. So this study displays that a high‐growth temperature and a high post‐growth‐RTA temperature improves the crystalline structure of the film. In fact, the best crystalline quality, which is close to the CeO₂ target taken as a reference, is obtained for a CeO₂ layer deposited at 800 °C and post‐annealed at 1000 °C for 30 s. Copyright © 2008 John Wiley & Sons, Ltd.     

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates

We report on reversible bipolar resistance switching effects in multiferroic BiFeO₃ thin films without electroforming. The BiFeO₃ thin films with (110) preferential orientation were prepared on LaNiO₃-electrodized Si substrates with a Pt/BiFeO₃/LaNiO₃ device configuration. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) of the devices was as high as three orders of magnitude. The dominant conduction mechanisms of LRS and HRS were dominated by ohmic behavior and trap-controlled space charge limited current, respectively. The resistance switching mechanism of the devices was discussed using a modified Schottky-like barrier model taking into account the movement of oxygen vacancies.