Ab initio calculation of the growth of Te nanorods and Bi2Te3 nanoplatelets

In this paper the growth mechanism of a Te/Bi$_{2}$Te$_{3}$ novel structure is studied by \textit{ab-initio} calculations. The results show that the growth of Te nanorods is determined by the adsorption energy of Te atoms on different crystalline Te surfaces. The adsorption energy of Te on the Te (001) surface is 3.29 eV, which is about 0.25 eV higher than that of Te on the Te (110). This energy difference makes the preferential growth direction along the $<001>$ direction. In addition, the higher surface energy of Bi$_{2}$Te$_{3}$ (110) and the lattice misfit between crystalline Bi$_{2}$Te$_{3}$ and Te along $<001>$ direction are considered to explain the growth of the Bi$_{2}$Te$_{3}$ nanoplatelets, in which Volmer--Weber model is used. The theoretical results are in agreement with experimental observation.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

压力诱导酌拓扑绝缘体化合物Bi2Te3常压相的超导性

通过高压电阻测量,发现了拓扑绝缘体化合物BizTe3压力诱导的超导性,在3-6GPa的压力范围内,超导临界温度L约为3K．高压下原位同步辐射的结果证明这个超导相来源于常压相结构．通过霍尔效应的测量,发现超导的Bi2Te3样品的载流子为P型．对高压同步辐射结果Reitveld精修得到的晶格参数和原子位置,并以此进行第一性...     

用正电子湮没研究纳米碲化铋的缺陷及其对热导率的影响

利用水热法合成了Bi₂Te₃纳米粉末, 并在300–500 ℃的温度范围内对其进行等离子烧结. X射线衍射测试表明制得的Bi₂Te₃粉末是单相的. 对于300–500 ℃范围内烧结的样品, 扫描电子显微镜观察发现随着烧结温度的升高样品颗粒明显增大, 但是根据X射线衍射峰的宽度计算得到的样品晶粒大小并没有明显的变化. 正电子湮没寿命测试结果表明, 所有的样品中均存在空位型缺陷, 而这些缺陷很可能存在于晶界处. 正电子平均寿命随着烧结温度的升高而单调下降, 说明较高的烧结温度导致了空位型缺陷浓度的降低. 另外, 随着烧结温度从300 ℃升高到500 ℃, 样品的热导率从0.3 W·m^-1·K^-1升高到了2.4 W·m^-1·K^-1, 这表明在纳米Bi₂Te₃中, 空位型缺陷和热导率之间存在着密切的联系.     

Ab initio calculations of accurate dissociation energy and analytic potential energy function for the second excited state B1∏ of 7LiH

The reasonable dissociation limit of the second excited singlet state B¹∏ of ⁷LiH molecule is obtained. The accurate dissociation energy and equilibrium geometry of the B¹\Pi state are calculated using a symmetry-adapted-cluster configuration--interaction method in full active space. The whole potential energy curve for the B¹∏ state is obtained over the internuclear distance ranging from about 0.10nm to 0.54nm, and has a least-square fit to the analytic Murrell--Sorbie function form. The vertical excitation energy is calculated from the ground state to the B¹∏ state and compared with previous theoretical results. The equilibrium internuclear distance obtained by geometry optimization is found to be quite different from that obtained by single-point energy scanning under the same calculation condition. Based on the analytic potential energy function, the harmonic frequency value of the B¹∏ state is estimated. A comparison of the theoretical calculations of dissociation energies, equilibrium interatomic distances and the analytic potential energy function with those obtained by previous theoretical results clearly shows that the present work is more comprehensive and in better agreement with experiments than previous theories, thus it is an improvement on previous theories.     

Effects of process parameters on electrical properties of n-type Bi2Te3 prepared by mechanical alloying and spark plasma sintering

n-Type Bi₂Te₃ thermoelectric materials were prepared by spark plasma sintering (SPS) using mechanically alloyed powders. Seebeck coefficient and electrical conductivity of the resultant materials were measured, with emphasis on the effects of sintering process parameters on the electrical properties. The power factor was improved from 1.5 to 1.6 mW/mK² when the SPS pressure was increased from 20 to 50 MPa at 623 K, and was further increased to 2.1 mW/mK² under 50 MPa by raising the SPS temperature from 623 to 673 K. The maximum power factor was obtained for the sample sintered under optimized SPS process parameters, in which the sintering temperature and the sintering pressure are 673 K and 50 MPa, respectively.     

Ab initio calculations on the α^3∑u^＋ state properties of dimer ^7Li2

The comparison between single-point energy scanning （SPES） and geometry optimization （OPT） in determining the equilibrium geometry of the α^3∑u^＋ state for ^7Li2 is made at numerous basis sets such as 6-311＋＋G（2df）, cc-PVTZ, 6-311＋＋G（2df, p）, 6-311G（3df,3pd）, 6-311＋＋G（2df,2pd）, D95（3df,3pd）, 6-311＋＋G, DGDZVP, 6-311＋＋G（3df,2pd）, 6-311G（2df,2pd）, D95V＋＋, CEP-121G, 6-311＋＋G（d,p）, 6-311＋＋G（2df, pd） and 6-311＋＋G（3df,3pd） in full active space using a symmetry-adapted-cluster/ symmetry-adapted-cluster configuration-interaction （SAC/SAC=CI） method presented in Gaussian03 program package. The difference of the equilibrium geometries obtained by SPES and by OPT is reported. Analyses show that the results obtained by SPES are more reasonable than those obtained by OPT. We have calculated the complete potential energy curves at those sets over a wide internuclear distance range from about 3.0α0 to 37.0α0, and the conclusion is that the basis set cc-PVTZ is the most suitable one. With the potential obtained at ccopVTZ, the spectroscopic data （Te, De, D0, ωe,ωeХe, αe and Be） are computed and they are 1.006 eV, 338.71 cm^-1, 307.12 cm^-1, 64.88 cm^-1, 3.41 cm^-1, 0.0187 cm^-1 and 0.279 cm^-1, respectively, which are in good agreement with recent measurements. The total 11 vibrational states are found at J=0. Their corresponding vibrational levels and classical turning points are computed and compared with available RKR data, and good agreement is found. One inertial rotation constant （By） and six centrifugal distortion constants （Dr Hv, Lv, My, Nv, and Ov） are calculated. The scattering length is calculated to be -27.138α0, which is in good accord with the experimental data.     

SiF$lt;sub$gt;2$lt;/sub$gt;($lt;sup$gt;1$lt;/sup$gt;A$lt;sub$gt;1$lt;/sub$gt;)自由基的从头算及势能函数

采用从头算的单双取代的二次组态相互作用方法及耦合簇理论对SiF₂自由基的基态进行结构优化, 发现用单双取代的二次组态相互作用方法配有基组6-311G(2df)计算得到的结构参数、谐振频率、离解能及力常数与实验值最接近并优于文献值. 借助多体项展式理论导出SiF₂自由基的势能函数并绘制了等值势能图. SiF₂自由基对称伸缩振动和旋转势能图显示: 在SiF+F →SiF₂反应通道上有鞍点出现, F原子需要越过4.38 eV的能垒才能生成稳定的SiF₂自由基; 只能通过SiF+F→SiF₂两个等价的通道才能生成稳定的SiF₂ 自由基, 并且该反应是有阈能的吸热反应. 关键词： 2')" href="#">SiF₂ 从头算 势能曲线     

Ti$lt;sub$gt;2$lt;/sub$gt;B$lt;sub$gt;$lt;i$gt;n$lt;/i$gt;$lt;/sub$gt;($lt;i$gt;n$lt;/i$gt;=1–10)团簇的结构与稳定性:基于从头算的研究

采用密度泛函理论中的B3LYP方法, 结合从头算的CCSD(T)方法对Ti₂B_n(n=1–10)团簇的稳定性和电子性质进行了研究. 发现两个Ti原子的掺杂导致B_n团簇结构发生了根本性变化. 随着n的增大, Ti₂B_n团簇结构生长非常规律. 所有的最稳定结构都可看成双锥结构, 并且两个Ti原子处在双锥结构的锥顶. 根据二阶差分能量分析, 得出Ti₂B_n(n=1–10)团簇的幻数是6, 7和8. 进一步分析了团簇的Ti原子解离能、B原子解离能以及团簇的电子亲和势和电离势. 这些能量分析表明Ti₂B₆团簇既有良好的热力学稳定性, 又有良好的动力学稳定性. 应用前线轨道理论, 对Ti原子与B₆之间的成键进行了分析, 了解其稳定性的根源. 关键词： 2B_n团簇')" href="#">Ti₂B_n团簇 稳定性 从头计算 电子结构     

Bi2S3/BiOCl复合光催化剂的水热合成及其高活性

采用一种简便的水热法在433 K的温度下成功合成了具有不同Bi₂S₃质量分数的Bi₂S₃/BiOCl复合光催化剂,利用各种技术对其进行了表征.在紫外光照射下,以甲基橙水溶液的光催化降解为模型反应,评价了Bi₂S₃/BiOCl复合光催化剂的活性.研究结果表明:与纯Bi₂S₃和纯BiOCl相比,Bi₂S₃/BiOCl样品明显具有更高的光催化性能,尤其当Bi₂S₃在Bi₂S₃/BiOCl中的质量分数为26.5%时,Bi₂S₃/BiOCl复合催化剂的光催化活性与商业P25(TiO₂)的活性非常接近,而这种商业P25在紫外光照射下是公认的高效光催化剂.这种明显提高的光催化活性主要归功于光生电子和空穴在Bi₂S₃和BiOCl形成异质结界面上的有效转移,降低了电子-空穴对的复合.     

Ab initio study on phase transition and magnetism of BiFeO3 under pressure

In this paper the first-principles calculations within local spin density approximation (LSDA)+U show that BiFeO3 experiences a mixed phase state with P4mm structure being the intermediate phase before the pressure of phase transition is reached. The critical pressure for the insulator-metal transition (IMT) is found to be about 50 GPa. A pressure induced crossover of high-spin states and low-spin states is observed close to the IMT pressure in R3c structure. The LSDA+U calculations account well for the mechanism of the IMT and crossover of spin states predicted in recent experiment (Ref.[1]).     

Fabrication and characterization of Bi2Te3 nanoplates via a simple solvothermal process

Bi₂Te₃ nanoplates have been successfully obtained by a novel solvothermal method in the presence of hexadecyltrimethylammonium bromide (CTAB). Various techniques such as X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), transmission electron microscope (TEM), selected area electron diffraction (SAED), and Fourier transform infrared spectrometry (FT-IR) have been used to characterize the obtained products. The results show that the as-synthesized samples are rhombohedral-structured Bi₂Te₃ single-crystal nanoplates about 70–200 nm in diagonal and 30 nm in thickness, and the growth direction is perpendicular to c-axis. The existence of CTAB is vital to the formation of the plate-like morphology. In addition, the reaction solvents also have important influence on the shape-control of final products.     

Ab initio study of the EFG tensor at Cd impurities in Sc2O3 semiconductor

We present an ab initio study of diluted Cd impurities localized at both cation sites of the semiconductor Sc₂O₃. The electric-field-gradient (EFG) tensor at Cd impurities located at both cationic sites of the host structure was determined from the calculation of the electronic structure of the doped system. Calculations were performed with the full-potential augmented-plane wave plus local orbitals (APW+lo) method within the framework of the density functional theory. We studied the atomic structural relaxations and the perturbation of the electronic charge density induced by the impurities in the host system in a fully self-consistent way. We showed that the Cd impurity introduces an increase of 8% in the nearest oxygen neighbors bond-lengths, changing the EFG sign for probes located at the asymmetric cation site. The APW+lo predictions for the charged state of the Cd impurity were compared with EFG results existent in the literature, coming from time-differential γ–γ perturbed-angular-correlations experiments performed on ¹¹¹Cd-implanted Sc₂O₃ powder samples. From the excellent agreement between theory and experiment, we can strongly suggest that the Cd acceptor impurities are ionized at room temperature. Finally, we showed that simple calculations like those performed within the point-charge model with antishielding factors do not correctly describe the problem of a Cd impurity in Sc₂O₃.     

One-colour resonant two-photon ionization spectrum of the 1-fluoronaphthalene dimer and ab initio calculation

The one-colour resonant two-photon ionization(R2PI) spectrum of the 1-fluoronaphthalene(1FN) dimer has been studied in the wavelength range of 304 to 322 nm by using a supersonic molecular beam and time-of-flight mass spectrometry.Compared with the original band 00(at 313.8 nm) of the S1 ← S0 transition of the 1FN monomer,a red-shifted band was observed in the 1FN dimer spectrum at about 315 nm with a relatively large linewidth,nearly 2 nm.Based on the consideration of inductive effect and ab initio calculations,this red-shifted band is assigned to the first electronic excited transition of the 1FN dimer.A possible geometric structure of the 1FN dimer is also obtained with calculations that the two 1FN molecules are combined through two hydrogen bonds which are formed between the hydrogen atom of a molecule and the fluorine atom of a neighbouring molecule.A time-dependent calculation was also carried out and the results are consistent with the experimental data.     

无机非铅钙钛矿Cs3Bi2I9的电子和光学性质

有机-无机卤化钙钛矿材料因具有优异的光电性质而被广泛应用于太阳电池中,然而材料及器件的稳定性及含铅问题却严重制约其生产发展.与杂化钙钛矿相比,无机非铅钙钛矿Cs₃Bi₂I₉因具有更强的稳定性和环境友好性受到人们的广泛关注.Cs₃Bi₂I₉具有单斜、三角和六方3种晶型,目前,对Cs₃Bi₂I₉的理论和实验研究主要集中在六方相.本文基于密度泛函理论的第一性原理对Cs₃Bi₂I₉单斜、三角和六方相的电子性质、载流子有效质量(m~*)、稳定性和光学性质进行了理论研究.结果表明,3种晶相具有相近的稳定性,三角相因具有较小的直接带隙(1.21 eV)性质成为最具研究潜力的对象.3种晶相的m~*均具有沿a,b方向相同和沿c方向不同的特点,三角相的电子有效质量最小、且沿a方向的电子有效质量小于c方向.相比单斜和六方相,三角相Cs_3<...     

Capability of Raman lidar for monitoring the variation of atmospheric CO2 profile

Lidar （Light detection and ranging） has special capabilities for remote sensing of many different behaviours of the atmosphere. One of the techniques which show a great deal of promise for several applications is Raman scattering. The detecting capability, including maximum operation range and minimum detectable gas concentration is one of the most significant parameters for lidar remote sensing of pollutants. In this paper, based on the new method for evaluating the capabilities of a Raman lidar system, we present an evaluation of detecting capability of Raman lidar for monitoring atmospheric CO2 in Hefei. Numerical simulations about the influence of atmospheric conditions on lidar detecting capability were carried out, and a conclusion can be drawn that the maximum difference of the operation ranges caused by the weather conditions alone can reach about 0.4 to 0.5km with a measuring precision within 30ppmv. The range of minimum detectable concentration caused by the weather conditions alone can reach about 20 to 35 ppmv in vertical direction for 20000 shots at a distance of 1 km on the assumption that other parameters are kept constant. The other corresponding parameters under different conditions are also given. The capability of Raman lidar operated in vertical direction was found to be superior to that operated in horizontal direction. During practical measurement with the Raman lidar whose hardware components were fixed, aerosol scattering extinction effect would be a significant factor that influenced the capability of Raman lidar. This work may be a valuable reference for lidar system designing, measurement accuracy improving and data processing.     

TeI4掺杂量对n型Bi2Te3基烧结材料热电性能的影响

采用区熔法结合放电等离子体快速烧结(SPS)技术制备了n型Bi₂Te₃基热电材料.在300—500K的温度范围内测量了各热电性能参数，包括电导率(σ)、塞贝克系数(α)和热导率(κ)，研究了掺杂剂TeI₄的含量(质量百分比分别为0，0.05，0.08，0.10，0.13和0.15wt%)对热电性能的影响.结果表明：试样的载流子浓度(n)随TeI₄含量增加而增大，使电导率增大、塞贝克系数的绝对值先增大而后减小，从而导致品质因子(α²σ)呈先增加后降低的变化趋势；同时，由于异质离子(I^-)以及载流子对声子的散射作用增强，可显著降低其晶格热导率.烧结材料的性能优值(ZT=α²σT/κ)对应于TeI₄含量为0.08wt%有其最大值，约为0.92.此外，烧结材料的抗弯强度增加至80MPa左右，从而可以显著改善材料的可加工性以及元器件的使用可靠性. 关键词： 2Te₃')" href="#">Bi₂Te₃ 放电等离子体快速烧结 热电性能     

Bi2Te3/Sb超晶格纳米线的外延生长和热电测量

通过脉冲电沉积,外延生长出小单元长度的Bi₂Te₃/Sb超晶格纳米线.借助哈曼方法,测量了超晶格纳米线阵列的热电性能,330 K时的ZT值可达0.15.研究了Bi₂Te₃/Sb超晶格纳米线阵列器件的制冷或者加热能力,发现器件的上下表面的最大温差可以达到6.6 K.     

Growth mechanism and characterisation of chemically grown Sb doped Bi2Se3 thin films

The synthesis of combinatorial Bi_2−xSb_xSe₃ thin films by arrested precipitation technique (APT) using triethanolamine-bismuth, triethanolamine-antimony and sodium selenosulphite as sources of Bi³⁺, Sb³⁺ and Se²⁻, respectively is investigated on commercial glass substrates. The growth mechanism of film formation, composition and surface morphology of the as deposited films were studied as a function of preparative parameters and bath composition. The films were monophasic, polycrystalline and covered the surface of the substrate completely. Energy dispersive X-ray analysis gave coherent elemental composition indicating single phase BiSbSe₃ was made. The good results obtained for Bi_2−xSb_xSe₃ thin films revealed that arrested precipitation technique is best suited for the deposition of large area thin films on conducting/nonconducting substrates to produce materials for device applications.     

Molecular dynamics study of the ternary compound Li3AlB2O6

A new compound with the stone cheinical composition as Li3AlB2O6 but with a different x-ray powder diffraction pattern as reported before was synthesized and studied experimentally by M. He, Chen X Let al （J. Solid State Chem. 163, 369 （2002））, but there lacks first principles study on the structure of it. Using conjugant gradient （CG） molecule dynamics （MD） simulation with a full relaxation of the atomic positions and of the shape and size of the cell, the structure of Li3AlB2O6 is studied from first principles. For the density functional, the local density approximation （LDA） and the generalized gradient approximation （GGA） forms are used respectively. Both the LDA and GGA results support the experimental structure of M. He et al. The result of MD simulation using GGA agrees with the experimental result much better. The energy bands are also studied, the band gap given by LDA and GGA are 5.65 eV, 5.34eV, respectively.