薄层色谱跟踪罗沙替丁醋酸酯的合成展开剂的选择

用薄层色谱(TLC)跟踪监测合成罗沙替丁醋酸酯过程中每一步反应,结果显示:1-3步的合成反应监测过程采用的展开剂都是甲醇∶氯仿∶氨水(1∶4:0,5;V/V/V);第4步合成反应监测过程中,当展开剂石油醚∶氯仿:丙酮:乙醇的配比为23.5∶ 12:2∶2.5(V/V/V/V)时,原料中间体及终产物的Rf值可控制在0.2...     

HPLC测定甲磺酸托烷司琼的有关物质

建立HPLC测定甲磺酸托烷司琼的有关物质。采用C18色谱柱,以甲醇-水-乙腈-三乙胺(565:40:35:0.3,V/V/V/V)为流动相A,以甲醇-水-乙腈-三乙胺(800:100;100:0.24,V/V/V/V)为流动相B,梯度洗脱检查有关物质;检测波长为284nm。甲磺酸托烷司琼检出限为0.24ng,主成分与其有关物质能完全分离。方法简便、准确、专属性好,可用于甲磺酸托烷司琼有关物质的测定。     

V/Pd界面氢吸附扩散行为的第一性原理研究

采用钒/钯(V/Pd)金属复合膜渗氢是从混合气体中分离氢气的一种有效实用方法.为深入地了解催化Pd层与金属膜结合处的界面结构与吸氢/渗氢特性的关联性,进而提升合金膜提纯氢气的能力,本文采用基于密度泛函理论的第一性原理研究了V/Pd金属复合膜界面的氢吸附/扩散行为.研究结果表明:由于V/Pd界面的电荷密度随着V/Pd成键而增加,导致氢原子(H)溶解能随着接近界面而增大,在V/Pd界面附近具有最高的溶解能(0.567 eV).氢迁移能垒计算表明,与H沿V/Pd界面水平扩散的最大能垒(0.64 eV)相比,H垂直V/Pd界面能垒(0.56 eV)更小,因而H倾向于垂直V/Pd界面进行迁移,并由Pd层扩散到V基体一侧,因V/Pd界面处Pd层的氢溶解能(0.238 eV)高于V膜侧(-0.165 eV),H将在界面的V膜侧积累,易引起氢脆.V基体掺杂Pd/Fe的计算表明,与未掺杂的能垒(0.56 eV)相比,掺杂Pd/Fe可明显地降低界面扩散路径中的最大能垒(0.45 eV/0.54 eV),利于氢的渗透扩散,且掺杂界面能一定程度抑制V和催化Pd层的相互扩散,提高复合膜的结构稳定性.     

气体吸附对V掺杂石墨烯电子结构与光学性质的影响

基于密度泛函理论(DFT)的广义梯度近似(GGA),采用第一性原理方法研究了气体分子吸附对V掺杂石墨烯的吸附能、电子结构与光学性质的影响．能带结构计算表明:吸附NO₂分子的V掺杂石墨烯的带隙显著增加,从0 e V变为0.368 e V,由金属性转变为半导体特性,而吸附CO与NH₃分子的V掺杂石墨烯的带隙则变化很小．三种吸附构型(NO₂,CO,NH₃)的吸附能分别为-8.499 e V、-2.05 e V和-2.01e V,说明V掺杂石墨烯对NO₂气体分子吸附最强．进而计算了本征、V掺杂石墨烯及其吸附NO₂分子的光学性质,结果表明:随着V掺杂与吸附NO₂气体,石墨烯介电吸收峰值有所增大,介电峰位向低能量区域移动;本征石墨烯仅吸收紫外光,V掺杂石墨烯吸附NO₂分子可以明显拓宽光吸收的光谱范围;掺杂与吸附使得石墨烯光电导率显著增强,能在红外与可见光区产生光电流．上述结果表明V掺杂石墨烯吸附NO₂后...     

光声光谱多组分气体分析仪的交叉干扰特性研究

设计了一套基于红外热辐射光源的光声光谱多组分气体分析仪。通过分析多组分气体间交叉干扰的主要因素以及特征气体的红外吸收谱线,确定了中红外带通滤光片的参数。利用标准气体对设计的光声光谱仪进行标定,研究了待测气体之间交叉干扰的定量关系,并利用湿度发生器对装置受到水气干扰情况进行分析。实验结果表明,C₂H₂对CH₄、CH₄对C₂H_6的干扰水平分别达到10.49μV/(μL/L)、18.66μV/(μL/L),其他烃类气体间的干扰可以忽略。CO₂对CO、CH₄、C₂H₂和C₂H₄干扰响应度分别为1.615μV/(μL/L)、0.055μV/(μL/L)、0.130μV/(μL/L)以及0.016μV/(μL/L)。此外,水气对C₂H₂、CH₄、C₂H_6、C₂H₄、CO和CO₂都会产生一定的干扰,干扰的响应度分别为0.591μV/(μL/L)、0.421μV/(μL/L)、0.071μV/(μL/L)、0.007μV/(μL/L)、0.051μV/(μL/L)和0.055μV/(μL/L)。实验结果表明C₂H₂对CH₄、CH₄对C₂H_6、CO₂对CO以及高浓度水气对其他气体的检测会产生较高水平的干扰,在测量过程中应当考虑扣除。     

负电荷层对a-IGZO TFT阈值电压的影响

采用脉冲直流磁控溅射的方式沉积In-Ga-Zn-O (IGZO)膜层作为TFT的有源层.在TFT沟道处的有源层和绝缘层的界面上, 通过溅射法制作一定厚度的负电荷层对阈值电压(V_th)进行调制, 使得V_th由-3.8 V升高至-0.3 V, 器件由耗尽型向增强型转变.通过增加Al₂O₃作为负电荷层, 可有效地将V_th控制在0 V附近, 并且提高其器件稳定性, 得到较好的电学特性:电流开关比I_on/I_off>10⁹, 亚阈值摆幅SS为0.2 V/dec, 阈值电压V_th为-0.3 V, 迁移率μ为9.2 cm² /(V·s).     

水溶性V2O5在聚合物太阳能电池中的应用

为了提高聚合物太阳能电池的能量转换效率,选择水溶性V2O5作为阳极缓冲层制备了结构为ITO/TiO2/P3HT∶PCBM/V2O5/Ag的电池器件。V2O5纳米线采用水热法制成。研究了V2O5浓度和退火温度对有机太阳能电池器件性能的影响。实验结果表明:V2O5质量浓度为300μg/mL的器件的效率最高,达到了2.35%,远大于无阳极缓冲层器件的效率0.14%;80℃是V2O5退火的最佳温度。与热沉积方法相比,可溶液处理的V2O5作为阳极缓冲层具有工艺简单且可大面积制备的优点,电池的效率得到了较大幅度的提高。     

薄层色谱法监测罗沙替丁醋酸酯的合成

用薄层色谱法监测罗沙替丁醋酸酯的最后一步合成过程,选择石油醚∶氯仿∶丙酮∶乙醇(23∶12∶2∶3,V/V/V/V)为展开剂跟踪检测罗沙替丁醋酸酯合成过程中的产物时,目标产物与杂质以及反应产物能够在薄板上很好地分离。     

V形坑尺寸对硅衬底InGaN/AlGaN近紫外LED光电性能的影响

使用MOCVD在图形化Si衬底上生长了InGaN/AlGaN近紫外LED,通过改变低温GaN插入层的厚度调控V形坑尺寸,系统地研究了V形坑尺寸对InGaN/AlGaN近紫外LED(395 nm)光电性能的影响。结果表明,低温GaN插入层促进了V形坑的形成,并且V形坑尺寸随着插入层厚度的增加而增大。在电学性能方面,随着V形坑尺寸的增大,-5 V下的漏电流从5.2×10~(-4)μA增加至6.5×10~2μA;350 mA下正向电压先从3.55 V降至3.44 V,然后升高至3.60 V。在光学性能方面,随着V形坑尺寸的增大,35 A/cm~2下的归一化外量子效率先从0.07提高至最大值1,然后衰退至0.53。对V形坑尺寸影响InGaN/AlGaN近紫外LED光电性能的物理机理进行了分析,结果表明:InGaN/AlGaN近紫外LED的光电性能与V形坑尺寸密切相关,最佳的V形坑尺寸为120~190 nm,尺寸太大或者太小都会降低器件性能。     

氢化物发生-原子荧光光谱法测定大米与圆白菜中痕量铅

建立了氢化物发生-原子荧光光谱法(HG-AFS)测定经HNO3-HClO4-H2O2湿法消解的大米与圆白菜等样品中痕量铅的方法,系统地优化了灯电流等仪器参数条件,探讨了载流、还原剂、样品酸度、氧化剂的最佳浓度,考察了掩蔽剂去干扰的情况。实验表明:在选定载流浓度HCl 2%(V/V)、还原剂KBH4浓度2%(m/V)[KOH恒为0.5%(m/V)]、样品酸度HCl 1%(V/V)、氧化剂K3Fe(CN)60.4%(m/V)、掩蔽剂H2C2O40.2%(m/V)及优化设置灯电流等参数的最佳实验条件下,测定铅的检出限为0.07μg/L,在0.00—50.00μg/L范围呈良好的线性关系,样品测定变异系数小于等于6.22%。该方法简便、干扰少、灵敏度高,应用于大米、圆白菜等样品中Pb的测定,结果与参考值相符,是一种切实可行的方法。     

An effective hybrid V2V/V2I transmission latency method based on LSTM neural network

We propose an effective hybrid vehicle-to-vehicle/vehicle-to-infrastructure (V2V/V2I) transmission latency method based on a long short-term memory (LSTM) neural network to address transmission latency in the internet of vehicles. First, a traffic model is established, and the LSTM artificial neural network is used to predict the vehicle arrival rate in the road section. Second, the vehicle arrival rate function is used to construct an objective function, i.e., the problem of minimizing system transmission the overall latency. The hybrid V2V/V2I transmission method determines the communication transmission mode of the vehicles to minimize transmission latency. The simulation results show that the overall transmission latency is substantially lower for the hybrid V2V/V2I transmission method than the pure V2I transmission method with the transmission packet size and vehicle speed varying.     

Magnetic and Superconducting Properties of the Heterogeneous Layered Structures V/Fe0.7V0.3/V/Fe0.7V0.3/Nb and Nb/Ni0.65(0.81)Cu0.35(0.19)

Journal of Experimental and Theoretical Physics - The heterogeneous ferromagnetic–superconducting layered heterostructures V/Fe0.7V0.3/V/Fe0.7V0.3/Nb and Nb/Ni0.65(0.81)Cu0.35(0.19), which...     

Effects of Zr and V additions on the stability and migration of He in bcc W: A first-principles study

The effects of zirconium (Zr) and vanadium (V) on the dissolution, diffusion and trapping behaviors of helium (He) in body-centered cubic (bcc) tungsten (W) have been investigated using first-principles simulations. We found that Zr and V atoms usually prefer to disperse into W-rich region rather than aggregate in W host lattice. Energetically, the relatively stable position for an interstitial He remains the tetrahedral interstitial site in W with the presence of Zr/V atom. The solution energy of the He atom is reduced because of the attractive interaction between He and Zr/V atom. Compared to W with Zr, the stronger attractive interaction between V and He results in the lower He solution energy in W with V. Kinetically, the He atom diffusion to Zr/V has a lower energy barrier than that of He diffusion to W along the optimal diffusion path TIS–TIS. In addition, the existing Zr/V atom improves the ability of Zr/V-Vacancy complex to capture He atom. These results provide incontrovertible evidence that the existing Zr/V atom has great influence on the behavior of He atom in bulk W.     

Search for muon to electron neutrino oscillations

A search for _e and oscillations has been carried out with the CHARM II detector exposed to the CERN wide band neutrino beam. The data were collected over five years, alternating beams mainly composed of muon-neutrinos and muon-antineutrinos. The number of interactions of _e and observed is comparable with the number of events expected from flux calculations. For large squared mass differences the upper limits obtained on the mixing angle aresin ²2 < 9.4=" ·=">^–3 for oscillating to _e andsin ²2 < 4.8=" ·=">^–3 for to , at the 90% confidence level. Combining neutrino and antineutrino data the upper limit is 5.6 · 10^–3.On leave of absence from ITEP (Moscow)     

利用LiF/Al作为电极的有机电致发光器件

本文报道了利用LiF/Al作为负电极的有机电致发光器件,器件结构为ITO/TPD/Alq3/LiF/Al,LiF层的加入增强了电子注入,当其厚度为0.4nm时,器件的性能最好,与单层Al和Mg/Al电极的同类器件相比,此时器件的开启电压由Al电极时的4.3V和Mg/Al电极时的3.0V降低到了2.0V,器件的最大亮度分别由4000cd/m²、14000cd/m²提高到19600cd/m²,器件的发光效率也分别增加了5倍和2倍,达到2.66lm/W.     

Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors

The influence of the hydrogen annealing treatment on the reliability of Ti/HfO_x /Pt capacitors is investigated by analyzing bias temperature instability (BTI). As compared to the N₂‐annealed sample, in the case of hydrogen‐annealed samples, both the set/reset voltages and currents are reduced from 6.5 V/–1.6 V to 3.8 V/–1.2 V and from 4 mA/170 nA to 800 µA/30 nA at 0.1 V, respectively. Of particular interest is the dramatic reduction in the set voltage variation from 3.3 V to 1.8 V. In addition, in BTI experiments, the current shift at the high resistance state (HRS) is reduced from 1.5 µA to 40 nA under a bias stress of –1 V/1000 s and from 40 µA to 0.5 µA under a temperature stress of 120 °C/1000 s. These results show that the hydrogen annealing treatment is very effective in improving the reliability of RRAM cells because it reduces the leakage current under bias temperature stress. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)