Design and Analysis of InGaN-GaN Modulation Doped Field-Effect Transistors (MODFETs) for Over 60 GHz Operation

A Modulation-Doped Field-Effect Transistor (MODFET) structure realized in InGaN-GaN material system is presented for the first time. An analytical model predicting the transport characteristics of the proposed MODFET structure is given in detail. Electron energy levels inside and outside the quantum well channel of the MODFET are evaluated. The two-dimensional electron gas (2DEG) density in the channel is calculated by self-consistently solving Schrödinger and Poisson's equations simultaneously. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f _T) of the proposed device is computed as a function of the gate voltage V _G . The results are compared well with experimental f _T value of a GaN/AlGaN HFET device. By scaling the gate length down to 0.25 m the proposed InGaN-GaN MODFET can be operated up to about 80GHz. It is shown in this paper that InGaN-GaN system has small degradation in f _T as the operating temperature is increased from 300°K to 400°K.     

Effect of Temperature Variation on the Characteristics of Microwave Power AlGaN/GaN MODFET

The prime motivation for developing the proposed model of AlGaN/GaN microwave power device is to demonstrate its inherent ability to operate at much higher temperature. An investigation of temperature model of a 1 μm gate AlGaN/GaN enhancement mode n-type modulation-doped field effect transistor (MODFET) is presented. An analytical temperature model based on modified charge control equations is developed. The proposed model handles higher voltages and show stable operation at higher temperatures. The investigated temperature range is from 100 °K–600 °K. The critical parameters of the proposed device are the maximum drain current (I_Dmax), the threshold voltage (V_th), the peak dc trans-conductance (g_m), and unity current gain cut-off frequency (f_T). The calculated values of f_T (10–70 GHz) at elevated temperature suggest that the operation of the proposed device has sufficiently high current handling capacity. The temperature effect on saturation current, cutoff frequency, and trans-conductance behavior predict the device behavior at elevated temperatures. The analysis and simulation results on the transport characteristics of the MODFET structure is compared with the previously measured experimental data at room temperature. The calculated critical parameters suggest that the proposed device could survive in extreme environments.     

High Performance (fT~500GHZ) In0.52Al0.48As/In0.53Ga0.47As/InP Quantum Wire MODFETs Employing Asymmetric Coupled-Well Channels

A coupled-well InAlAs/InGaAs quantum wire MODFET structure is proposed, for which simulations predict improved frequency performance (>500 GHz), over a wider range of V_g, as compared to well/wire devices with a standard MODFET heterointerface. A comparison of several transverse potential well profiles, obtained by varying the placement of a thin barrier within a 100 Å finite well, is presented. In all cases, the quantum wires consist of a 0.1 m long channel and a 150 Å finite-square-well lateral profile. It has been found that the peak of the electron distribution for the first confined state, as measured from the heterointerface, changes dramatically depending on the location of the thin barrier. For quantum wire structures, realized in the lattice matched system of In_0.52Al_0.48As/In_0.53Ga_0.47As/InP, a change in the barrier location of 25 Å is accompanied by a shift in the carrier peak of more than 40 Å (~20 Å closer to or farther from the spacer-well interface than in the standard MODFET profile). Implications of this are reflected in the current-voltage characteristics (I_d-V_d) and frequency responses (f_T-V_g) of the proposed structures.     

Self-Aligned SiGe MOS-Gate FET with Modulation-Doped Quantum Wire Channel for Millimeter Wave Application

This paper describes a self-aligned SiGe MOS-gate field-effect transistor (FET) having a modulation-doped (MOD) quantum wire channel. An analytical model based on modified charge control equations accounting for the quantum wire channel, is presented predicting the transport characteristics of the MOS-gate MODFET structure. In particular, transport characteristics of devices having strained SiGe layers, realized on Si or Ge substrates, are computed. The transconductance g_m and unity-current gain cutoff frequency (f_T) are also computed as a function of the gate voltage V_G. The calculated values of f_T suggest the operation of one-dimensional SiGe MODFETs to be around 200 GHz range at 77°K, and 120 GHz at 300°K.     

10 Tera Hertz Operation in One-Dimensional Quantum Interference Transistor (1-D QUIT) Devices

A high performance quantum interference transistor (QUIT) realized using high mobility 1-D MODFET channels is presented. The operation of this 1-D QUIT is based on electrostatic Aharonov-Bohm quantum interference effect. The channel length of the device is smaller than the inelastic coherence length of the electrons in the quantum well wire channel, otherwise scattering will randomize electron's phase and destroy the quantum interference effect. Transport characteristics of the 0.2 m channel 1-D QUIT are calculated at 4.2 °K and compared with a two-dimensional QUIT device reported in literature. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with its two-dimensional counterpart. The maximum frequency of operation of the 1-D QUIT is in the Tera Hertz regime, which makes it very attractive device for high frequency applications.     

Dual-mode optical fibres with zero intermodal dispersion

An exact analytical approach to the synthesis of the refractive-index profile of dual-mode optical fibres with zero intermodal dispersion is presented, and the computer-aided, trial-and-error synthesis of the optimal profile is described. The synthesis is based on inverse scattering theory. Self-consistency of free potentials corresponding to individual modes was attained by numerical methods. The characteristics of the optical fibres with synthetized profiles were analysed, the optimization constraints were specified, and an optimum profile was found. The results can be used for the design of broadband optical fibres.Notation (r), (r) Single and double derivatives - C _l(r) Determinant of a matrix det - k _l (r) Vector - k _l (r) _l (r) The scalar products of the vectors - K _l(wr) The modified Bessel function of the second kind - _l(wr) The modified Bessel function of the first kind - J _l(uaR) The Bessel function of the first kind     

Optical-gyroscope application of efficient crossed-channel acoustooptic devices

An acoustooptic (AO) deflector/modulator using a single-mode crossed-channel waveguide of 2n type and an interdigital transducer is fabricated in aY-Z LiNbO₃ substrate. This module has shown a high diffraction efficiency. A 50% diffraction efficiency and a bandwidth of 13.4 MHz were obtained with 0.13 W of surface-acoustic wave power centered at 320MHz. Since the cross section of the channel waveguide and that of the optical fiber are comparable, the interfacting of the resultant acoustooptic devices with fiber optical systems would greatly simplified. In addition, the frequency-shifted optical beam can be conveniently used as a reference signal or local oscillator in heterodyne detection. Consequently, this cross-channel acoustooptic device should find a variety of applications in realizing an integrated-optics module with a 50–50% power slit, optical communication, and an optical fiber system. One of those applications, optical gyroscopes, is proposed by using this kind of crossed-channel AO device.     

Current-induced coupling between conductance channels in membranes

The driven system of conducting channels in a nerve membrane is investigated. A current flow generates a coupling between the channels: the current through a channel is influenced by the presence of other conducting channels via the deformation of the equipotential surfaces within the media adjacent to the membrane. We derive an integral equation for the membrane voltageV(s) (s in the membrane plane) and solve it for different membrane conductance distributions(s) including models for stochastic distributions of conducting channels.V(s) is a nonlinear functional of(s). The system of coupled channels is compared with an Ising model. The system exhibits a multi-channel interaction which can be characterized by two different rangesd _int andD ₁. For a mean channel distanced ₀d _int interaction effects are negligible, and ford ₀D ₁ all channel-voltages are equal and thus represent a mean-field for the channels. Increasing conductivity of the medium decreasesd _int and increasesD ₁. With experimental data on sodium channels in nerve membranes we find:d _intd ₀, i.e. a 50% decrease of the channel-voltages by the interaction, andD ₁10³10⁴ d ₀, which indicates mean-field behaviour of the channels. In a subsequent paper we shall treat the statistics of channels which open and close stochastically under the influence of the local membrane voltage.     

A two-channel model for transport across high T c bicrystal grain boundary junctions

This paper describes an investigation of the microscopic configuration of the barrier which exists at the boundary in high T _c grain boundary junctions. A model for describing the properties of bicrystal and biepitaxial grain boundary junctions is proposed. Two channels for transport currents are assumed, the supercurrent being carrier by one channel only. The measurable macroscopic parameters of a junction, (critical current density and normal state resistance) are computed in terms of the microscopic parameters that appear in this model. The model well describes major features of the characteristics observed for high T _c bicrystal junctions.     

An Analytical Three-Region Two-Dimensional Model for SiGe MOSFETs Operating at Millimeter Wave Frequencies

An analytical two-dimensional model for an n-channel SiGe MOSFET is presented. In this paper a three-region model for SiGe is developed. The space charge region under the gate has been divided into three regions and the two-dimensional potential distribution is found by choosing appropriate boundary conditions for the drain, source and depletion regions. The analytical model predicts unity current-gain cut-off frequency (f _T ) of a 0.5 m SiGe MOSFET to be over 18.6 GHz.     

A comment on an exact solution with a stiff equation of state

Recently, an analytical stellar model with a stiff equation of state and density distribution= _c (1-r ²/r _o ² ) was presented. We show that such a solution cannot exist.     

Current controlled negative resistance phenomenon in SbPbSe system

Thin film Al/Sb₂Pb₁Se₇/Al metal-glass-metal sandwiched structures prepared using thermal evaporation technique have been studied. The I–V measurements showed that the devices switched from high resistance OFF state to a low resistance ON state when a particular voltage appeared across it. The OFF state I–V characteristics showed non-ohmic behaviour while in the ON state the devices displayed purely linear characteristics. The switching voltage (V _th) was found to depend on film thickness and temperature of the device. A linear relation between V_th and temperature was observed.     

An analytical threshold voltage model for dual-strained channel PMOSFET

Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si 1-x Ge x /relaxd Si 1-y Ge y (s-Si/s-SiGe/Si 1-y Ge y) metal-oxide-semiconductor field-effect transistor (PMOSFET),an-alytical expressions of the threshold voltages for buried channel and surface channel are presented.And the maximum allowed thickness of s-Si is given,which can ensure that the strong inversion appears earlier in the buried channel (compressive strained SiGe) than in the surface channel (tensile strained Si),because the hole mobility in the buried channel is higher than that in the surface channel.Thus they offer a good accuracy as compared with the results of device simulator ISE.With this model,the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted,such as Ge fraction,layer thickness,and doping concentration.This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si 1-y Ge y metal-oxide-semiconductor field-effect transistor (MOSFET) designs.     

Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518

Ga _x In_1–x As _y P_1–y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility of the Ga _x In_1–x As _y P_1–y epitaxial layers (composition, thickness, doping, etc.) have become key parameters. These problems have been addressed in the frame of ESPRIT project 2518 and are presented in this paper. Several aspects have been considered starting from the optimization of InP substrates, the MOVPE growth of uniform GalnAsP layers, the material characterization to the validation of material uniformity on passive optical waveguides. Both scanning photoluminescence analysis and waveguide losses measurements performed on 2 inch wafers with a high lateral resolution have shown that high quality uniform GalnAsP layers can be obtained reproducibly on 2 InP substrates using a commercially available LP-MOCVD growth process. In particular, more than 60% of 36 mm long, 3m wide and 100m spaced rib waveguides exhibit losses below 0.8dBcm^–1.     

Cation diffusion in InP/In0.53Ga0.47As superlattices: strain build-up and relaxation

InP and In_0.53Ga_0.47As are lattice matched and can form superlattices that are free of crystalline defects. Zn indiffusion enhances the diffusion of cations while leaving the anions unaffected; the resultant In_1–x Ga _x P/In_1–x Ga _x As superlattices are strained. Since the as-grown specimens are pseudomorphic, any defects observed after Zn diffusion must be attributed to strain relaxation. Studies of the post-growth strain build-up and relaxation in this novel system suggest a new strain relief mechanism for buried strained layers of face-centred-cubic (fcc) structures. The signature defect of the proposed mechanism is a microtwin along a {111} plane spanning the buried strained layer and terminating at both interfaces with partial dislocations of 1/6112 type. Energy analysis indicates that this new partial-dislocation strain relief mechanism is more effective than the conventional 60 perfect-dislocation mechanism for relieving the in-plane strain in buried strained layers. Therefore, the proposed mechanism is an energetically favourable relaxation channel and limits the useful thicknesses of strained layers in electronic and optoelectronic devices.     

Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor

Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H--SiC metal semiconductor field effect transistors (MESFETs). An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H--SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a (channel length/channel depth) ratio, drain applied voltage V_DS and channel doping concentration N_D, thus providing a good basis for the design and modelling of short channel 4H--SiC MESFETs device.     

Effect of non-zero Schottky barrier on the J-V characteristics of organic diodes

Current-voltage (J -Vcharacteristics of poly(3-hexylthiophene) (P3HT) are studied at different temperatures upto high voltages ∼ 20 V in the hole-only device configuration. The characteristics are studied in the temperature range 310-210K. In the intermediate voltage range the J -V characteristics follow J V ^l+1 , where l > 1 . As the voltage increases to high values J still varies as a power law i.e. as V^m, but contrary to the literature result m becomes < 2 . This behavior is explained theoretically in terms of non-zero injection Schottky barriers. The complete analytical expressions for the actual trap filled limit voltage (V′ _TFL) and J -V curves beyond V′ _TFL are presented.     

Functional Realization and Nonlinear Induced Representation in the Geometrodifferential Conception of Extended Particles

In a model of extended particles described by Minkowski space-time variables x, de Sitter internal variables , a physical wave _x () representing the proper characteristics of the particles, and a functional wave X [ ] giving previsions, we study functional propagation of X in the space of physical waves (as advocated by a quantum functional theory) as well as the nonlinear realization of the internal de Sitter group on its Lorentz subgroup (introduced by Drechsler). The first study is undertaken in a special instance _x () = (x), while in the second the general structure of the model is adopted and curved space-time treated, but the functional propagation is not considered. A fiber bundle structure and an induced representation method are used. Propagators are derived, a quantum version of a variant of Drechsler's theory is obtained, and a nonlinear version of our model is constructed.     

InGaAs/GaAs multiple-quantum-well modulators and switches

The design, fabrication and characterization of electrooptical modulators and switches based on pseudomorphic InGaAs/GaAs multiple-quantum-well (MQW) structures is presented. The absorption and refractive index changes (, n) of In_0.2Ga_0.8As/GaAs MQW structures due to the quantum-confined Stark effect are examined in detail. The figures of merit /₀ and n/₀ give information on the design of modulation and switching devices. Based on these results, we develop two types of efficient and high-speed modulators, vertical and waveguide modulators, and for the first time an InGaAs/GaAs intersectional X-type switch. Recent experimental results for each device are presented.     

Theoretical calculations and Raman spectrum of intercalation modes in LixInSe

By using an extended linear-chain model which includes the interlayer forces, we have calculated the new vibrational modes, of Li intercalated InSe. The dispersion curves along thek _z wavevector perpendicular to the layers for the -polytype are determined in the first Brillouin zone. Assuming that the interlayer interaction is not modified upon intercalation and the interaction between lithium atom and adjacent layers in the van der Waals plane has the same value than the interlayer one, the new modes are determined with the force constant given by the rigid layer mode of the, -polytype at 18 cm^–1. This model gives the variation of the acoustic branches and the appearance of two optical intercalation modes at higher frequencies. The Brillouin zone boundary modes of the acoustic branches at 18 and 41 cm^–1 in the pure material are calculated to be 22 and 50 cm^–1 respectively forx=1/2. The dispersion of the new optical branches is flat along thez-direction and frequencies are obtained at 96 cm^–1 for the Li mode perpendicular tok _z and at 218 cm^–1 for the Li mode parallel tok _z. We compare also our results with the Li mode frequencies obtained in a total energy calculation. Raman scattering experiments have been performed in intercalated sample in order to verify the proposed model.