硅中金受主能级在单轴应力下瞬态电容的研究

用恒定温度下瞬态电容法研究了硅中金受主能级在沿〈100〉,〈110〉,〈111〉晶向单轴应力作用下的能级移动。考虑到硅的导带在单轴应力下的分裂,导出了单轴应力下深中心中电子发射率的公式。根据该式和发射率的实验数据以及切变畸变势常数Ξ_u,求出了金受主能级激活能随应力的改变。在实验应力范围内(0—9kbar),激活能与应力成线性关系。当应力平行于〈110〉〈111〉晶向时,激活能随应力改变的斜率分别为α_<110>=-3.2±0.6meV/kbar,α_<111>=-0.3±0.6meV/kbar;当应力平行于〈100〉晶向,若取Ξ_u=9.2eV,α_<100>=-5.8±0.8meV/kbar,若取Ξ_u=11.4eV,α_<100>=-5.3±0.8meV/kbar,α表现出强烈的各向异性。进一步确定了金受主能级相对于零压力下导带底的绝对移动的压力系数。若取Ξ_u=9.2eV,这些系数分别为S_<100>=-1.3±0.8meV/kbar,S_<110>=0.7±0.6meV/kbar,S_<111>=-0.7±0.6meV/kbar。如取Ξ=11.4eV,则S_<100>=-3.5±0.8meV/kbar,S_<110>=0.0±0.6meV/kbar,S_<111>=-1.0±0.6meV/kbar。同一组的三个绝对移动值之间的偏离都超过了实验误差这一事实,说明了金中心具有立方对称性,同时中性金与带负电的金的基态都是非简并的可能性很小。 关键词：     

Si基碲镉汞光伏探测器的深能级研究

通过变温I-V测试方法对中波Si基碲镉汞光伏探测器的深能级进行了研究. 首先在产生-复合电流为主导电流机理范围内对Si基碲镉汞探测器的I-1/(k_BT)曲线拟合,得到-0.01 V偏压下单元Si基碲镉汞器件的深能级E_g/4.然后对不同偏压下的实验数据进行了拟合、比较,发现不同偏压下起主导作用的深能级与该偏压下的暗电流机理有较好的对应关系. 最后对-0.01 V偏压下不同面积器件的深能级进行了拟合、比较,发现 关键词： Si基碲镉汞 深能级 产生-复合电流 理想因子     

GaAs1-xPx:N束缚激子的压力行为

本文研究了77K温度下GaAs_0.15P_0.85:N样品的静压光致发光。在P>10kbar时,可清楚地观察到NN₁的发光。同时,观察到压力下N_x带发光猝灭及谱带窄化现象。结果表明,压力效应明显地加强了N_x→NN₁的热助能量转移过程。对N_x能级和NN₁能级的压力行为进行了分析和拟合计算,得到相应能级的压力系数及波函数中各能谷的有关参数。 关键词：     

用高压显微光谱系统研究(Zn0.85Cd0.15)S:Cu,Al磷光体在流体静压力下施主-受主对的发光

用金刚石对顶砧高压显微光谱系统在室温和1bar—66kbar的流体静压力范围内研究了(Zn_0.85Cd_0.15)S:Cu,Al磷光体的发光峰位置和相对发光强度随压力而变化的规律。随着压力的增加,发射峰值波长迅速移向短波方向,而发射峰值对应的光子能量随压力增加的速率为4.7meV/kbar(38cm^-1/kbar)。这个值比该材料的吸收边随压力增加的速率要小。随着压力的增加,该磷光体的发光峰值相对强度急骤下降,当压力从常压升到66kbar时,发光峰值相对强度下降到原值的6％。这些结果可以用Al³⁺-Cu⁺的施主-受主对模型来解释。本文还估计施主(Al³⁺)和受主(Cu⁺)的激活能之和随压力增加的速率为3.7meV/kbar(30cm^-1/kbar)。 关键词：     

InxGa1-xAs-GaAs应变层量子阱结构的流体静压光荧光研究

本文报道了对分子束外延(MBE)生长的In_0.25Ga_0.75As-GaAs应变层量子阱结构在77K下的压力光荧光(PL)研究的结果。流体静压力从0到50kbar.,给出了In_0.25Ga_0.75As-GaAs应变层量子阱的Γ谷压力系数,实验观察到了量子阱中能级与势垒GaAs中X谷的能级交叉。通过对其压力行为的分析,给出了In_0.25Ga_0.75As-GaAs异质结的导带与价带跃变比:Q_c=△E_c:△E_v=0.68:0.32。对(InGa)As-GaAs应变量子阱常压下的理论分析与实验符合很好。本文也对Al_0.3Ga_0.70As-GaAs量子阱进行了讨论。 关键词：     

用高压显微光谱系统研究(Zn_(0.85)Cd_(0.15))S:Cu,Al磷光体在流体静压力下施主-受主对的发光

用金刚石对顶砧高压显微光谱系统在室温和1bar—66kbar的流体静压力范围内研究了(Zn_(0.85)Cd_(0.15))S:Cu,Al磷光体的发光峰位置和相对发光强度随压力而变化的规律。随着压力的增加,发射峰值波长迅速移向短波方向,而发射峰值对应的光子能量随压力增加的速率为4.7meV/kbar(38cm~(-1)/kbar)。这个值比该材料的吸收边随压力增加的速率要小。随着压力的增加,该磷光体的发光峰值相对强度急骤下降,当压力从常压升到66 kbar时,发光峰值相对强度下降到原值的6％。这些结果可以用Al~(3 )-Cu~的施主-受主对模型来解释。本文还估计施主(Al~(3 )和受主(Cu~ )的激活能之和随压力增加的速率为 3.7meV/kbar(30cm~(-1)/kbar)。     

p型硅MOS结构Si/SiO2界面及其附近的深能级与界面态

用深能级瞬态谱(DLTS)技术系统研究了Si/SiO₂界面附近的深能级和界面态。结果表明,在热氧化形成的Si/SiO₂界面及其附近经常存在一个浓度很高的深能级,它具有若干有趣的特殊性质,例如它的DLTS峰高度强烈地依赖于温度,以及当栅偏压使费密能级与界面处硅价带顶的距离明显小于深能级与价带顶的距离时,仍然可以观测到一个很强的DLTS峰。另外,用最新方法测量的Si/SiO₂界面连续态的空穴俘获截面与温度有关,而与能量位置无明显关系,DLTS测 关键词：     

高压下LiKSO4介电和弹性特性的反常及p—T相图

本文通过对不同温度T(150—350K)和压力p(0—10kbar)范围内LiKSO₄晶体介电和弹性性质的研究,发现在室温8.2kbar(对应于升压过程),和4kbar(对应于降压过程)附近介电和弹性系数有突变。我们把它归结为压力诱导的LiKSO₄相转变。这个相变过程伴随着很大的压力滞后现象。本文还给出了LiKSO₄在上述温度和压力范围内的p-T相图。并发现在3.8kbar和281K处存在一个三相点。 关键词：     

40kbar内碘酸锂(LiIO3)的P-T状态图

在0一40kbar,20一750℃的压力与温度范围内探索了碘酸锂(LiIO₃)可能存在的高压相,发现在1.5—4.9kbar及310—450℃的压力及温度范围内以及15kbar以上的高压范围内分别存在一个高压结构。较精确地测定了各相的相界,改正了国外1969年发表的相图中的一些错误,并对高温高压下各相的稳定性进行了初步讨论。 关键词：     

半磁半导体Cd1-xMnxTe光吸收边的压力效应

本文研究了室温下1—40kbar流体静压力范围内三元化合物半磁半导体Cd_1-xMn_xTe光吸收边的压力效应。实验结果给出:x<0.5的样品,吸收边随压力增加向高能方向以α=6—8×10^-3eV/kbar的速率漂移,并具有10^-5/kbar²量级的二级非线性系数;x≥0.5的样品,表观吸收边随压力增加向低能方向漂移,压力系数为α-5×10^-3eV/kbar。高压下所研究的样品均有一从闪锌矿结构到NaCl结构的相变发生。这一相变可以是不可逆的,相变压力与样品组分有关,大致在25—40kbar范围内。根据半导体能带畸变势效应和晶体场理论模型估计了压力系数的理论值,讨论了不同压力系数的物理原因。 关键词：     

Effect of biaxial strain and hydrostatic pressure on the magnetic properties of bilayer CrI3

Two-dimensional van der Waals magnetic materials are intriguing for applications in the future spintronics devices, so it is crucial to explore strategy to control the magnetic properties. Here, we carried out first-principles calculations and Monte Carlo simulations to investigate the effect of biaxial strain and hydrostatic pressure on the magnetic properties of the bilayer CrI₃. We found that the magnetic anisotropy, intralayer and interlayer exchange interactions, and Curie temperature can be tuned by biaxial strain and hydrostatic pressure. Large compressive biaxial strain may induce a ferromagneticto-antiferromagnetic transition of both CrI₃ layers. The hydrostatic pressure could enhance the intralayer exchange interaction significantly and hence largely boost the Curie temperature. The effect of the biaxial strain and hydrostatic pressure revealed in the bilayer CrI₃ may be generalized to other two-dimensional magnetic materials.     

静水压力对Al14Mn2P16磁光性质影响的密度泛函理论研究

采用第一性原理，研究不同静水压力（0~20 GPa）下Al₁₄Mn₂P₁₆的弹性与磁光性质.计算得到基态是铁磁态.弹性稳定性判据表明该体系是稳定的.研究发现磁矩随静水压力的增加而减小.静水压力低于5 GPa时，居里温度达到184 K，随着静水压力的增加略有下降；有趣的是，当静水压力高于5 GPa时，随着静水压力的增加，居里温度急剧下降，在18 GPa时消失.同时还发现随静水压力的增加可见光范围的吸收峰有明显的蓝移，当静水压力达到20 GPa时，可见光范围的吸收峰消失.     

Influence of hydrostatic pressure on the diffusion of hydrogen in n-GaAs : Si

Hydrogen diffusion experiments have been performed in buried silicon doped GaAs epilayers under hydrostatic pressure. The deuterium diffusion profile in n-GaAs : Si depends on the hydrostatic pressure: a plateau followed by a steep decrease progressively appears as the pressure is increased. This has been interpreted as being due to the increasing importance of the trapping-detrapping process of H⁻ on Si⁺ donors during the hydrogen diffusion. This increase has been attributed to a deepening of the hydrogen acceptor level with respect to the bottom of the Γ conduction band of GaAs as the hydrostatic pressure increases.     

The effect of annealing under hydrostatic pressure on the visible photoluminescence from si-ion implanted SiO2 films

We have studied the influence of the hydrostatic pressure during annealing on the intensity of the visible photoluminescence (PL) from thermally grown SiO₂ films irradiated with Si⁺ ions. Post-implantation anneals have been carried out in an Ar ambient at temperatures T_a of 400°C and 450°C for 10 h and 1130°C for 5 h at hydrostatic pressures of 1 bar–15 kbar. It has been found that the intensity of the 360, 460 and 600 nm PL peaks increases with rising hydrostatic pressure during low-temperature annealing. The intensity of the short-wavelength PL under conditions of hydrostatic pressure continues to rise even at T_a=1130°C. Increasing T_a leads to a shift in the PL spectra towards the ultraviolet range. The results obtained have been interpreted in terms of enhanced, pressure-mediated formation of ≡Si–Si≡ centres and small Si clusters within metastable regions of the ion-implanted SiO₂.     

High hydrostatic pressure effect on magnetic state of anion-deficient La0.70Sr0.30MnOx perovskite manganites

The magnetic state of La_0.70Sr_0.30MnO_x (x=2.85, 2.80) anion-deficient manganites is studied experimentally under hydrostatic pressure up to 5.2 GPa. These materials possessing the properties of a spin-glass state. The La_0.70Sr_0.30MnO_2.85 exhibits a coexistence of the rhombohedral (R3¯c) and tetragonal (I4/mcm) crystal structures and below T_f 50 K the spin-glass state is formed. The La_0.70Sr_0.30MnO_2.80 exhibits the tetragonal (I4/mcm) crystal structure. For this compound a phase-separated magnetic state below T_f is formed, involving coexistence of C-type antiferromagnetic (AFM) clusters within spin-glass matrix. In both compounds the crystal structure and magnetic states remain stable upon compression. Under the hydrostatic pressure up to 1 GPa, the La_0.70Sr_0.30MnO_2.85 is a spin glass with a smeared phase transition to the paramagnetic state. The freezing temperature T_f of the magnetic moments of the ferromagnetic clusters increases at a rate of 4.30 K/GPa and the magnetic ordering temperature T_MO increases at a rate of 12.90 K/GPa. The enhancement of the ferromagnetic properties of La_0.70Sr_0.30MnO_2.85 anion-deficient manganite under hydrostatic pressure is explained by the redistribution of oxygen vacancies and a decrease in the unit cell parameters.     

半导体缺陷能级的应力效应

本文讨论用瞬态方法测量立方半导体缺陷能级应力移动和判别缺陷势对称性的有关问题。对于简并能级E_s引入应力下分裂平均值E_s,它具有原哈密顿群对称操作不变性,因此可以用群论方法得出应力系数间关系并用以判断缺陷势对称性。比如当缺陷势具有T群以上对称时,缺陷能级平均值E_T相对导带底或价带顶单轴应力系数(?(E_c-E_T))/(?F)或(?(E_T-E_v))/(?F)与应力F方向无关且等于流体静压系数的1/3。也讨论了C_3v对称缺陷势的情况。缺陷能级对导带的平均电子发射率e_n和俘获率c_n满足简洁关系 e_n=g_Tg_c^-1c_nN′_ce^{(-(E_c-E_T)/kT)}。指出通过测量e_n的应力关系判断缺陷势对称性的各种方案比较。分析了用瞬态法测量e_n有关问题。当E_T分裂但诸能级间允许跃迁时,瞬态讯号呈单指数衰减,时间常数为e_n^-1。当E_T分裂但诸能级间禁止跃迁时,瞬态讯号呈多指数衰减。用初始斜率可求得e_n。 关键词：     

IrB和IrB$lt;sub$gt;2$lt;/sub$gt;力学性质的第一性原理计算

采用平面波赝势密度泛函理论对0–100 GPa静水压下P₁ -IrB（空间群Pnma）和P₅ -IrB₂（空间群Pmmn）结构的平衡态晶格常数、弹性常数等性质进行了研究. 研究结果表明,P₁ -IrB不可压缩性随着压强的增加而增强;P₅ -IrB₂ 结构在0–100 GPa范围内弹性常数、体弹模量、剪切模量均呈现出有规律的变化,当所加压强为50 GPa时,杨氏模量和在b方向的晶格常数发生异常变化. 对零压下P₁ -IrB和P₅ -IrB₂ 的电子结构的研究发现,二者均没有一个明显的带隙,主要原因为Ir原子和B原子间的共价作用. 从P₁ -IrB和P₅ -IrB₂的能带结构和态密度图可以发现这两种结构均有金属性. 关键词： 1 -IrB')" href="#">P₁ -IrB 5-IrB₂')" href="#">P₅-IrB₂ 第一性原理 力学性质     

Li 掺杂ZnO薄膜的导电和发光特性

通过将含有原子数分数为2%锂的Zn-Li合金薄膜和金属锌薄膜在500℃氮气氛中退火2h,然后在700℃氧气氛下退火1h的方法分别制备出ZnO:Li和ZnO薄膜。Hall效应测量表明,其导电类型分别为p型和n型。通过He-Cd激光器的325nm线激发,测量了样品室温和低温(12K)光致发光光谱,并根据ZnO:Li薄膜的低温发光光谱特征,计算出Li相关受主能级位于价带顶137meV处。     

Theoretical Calculations of Strain—Induced Splittings and／or Shifts of t2^32E and t2^34A2 Levels for MgO：Cr^3＋

Under various uniaxial stresses, both strains with low symmetry and isotropic strains of crystals take place. The former gives the strain-induced low-symmetry crystal fields and accordingly splittings of levels; the latter gives the isotropic parts of strain-induced crystal fields and accordingly shifts of levels. By using the wavefunctions obtained from the diagonalization of the complete d^3$ energy matrix in a regular octahedral field, the relevant matrix elements and accordingly strain-induced splittings and/or shifts of t₂³²E and t₂³⁴A₂ for MgO:Cr³⁺ have been calculated. Their physical origins have been thoroughly analyzed and revealed. It is the admixtures of basic wavefunctions resulted from the spin-orbit interaction and/or Coulomb interaction and/or Kramers degeneracy that make strain-induced splittings of levels nonzero. In contrast with this, strain-induced shifts come mainly from the zero-order approximate wavefunctions. It is found that there are nonvanishing matrix elements of operators T₂ξ, T₂η and T₂ζ between wavefunctions with positive M_s and those with negative M_s', which have important effects on strain-induced splittings of levels. The shifts of t₂³²E under both hydrostatic pressure and uniaxial pressure have been uniformly calculated. The important results of Y_c, Z_c, P_c, Q_c and 〈t₂|| C(A₁)|| t₂〉have been evaluated.     

静压下Znse／Zn_（1－x）Cd_xSe应变超晶格的光致发光研究

本文首次在室温和０—２．５ＧＰａ静压范围内研究了Ｚｎｓｅ／Ｚｎ０．２６Ｃｄ０．２６Ｓｅ应变超晶格的静压光致发光，观察到了室温条件下的超晶格阱层的重空穴激子跃迁随压力的亚线性变化的特性．经过计算机拟合实验数据得到了一阶和二阶压力系数．理论计算得到的一阶压力系数与实验得到的压力系数符合得较好。