Diode-pumped short pulse passively Q-switched 912 nm Nd:GdVO<Subscript>4</Subscript>/Cr:YAG laser at high repetition rate operation

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr:YAG laser is demonstrated for the first time. In a concave-piano cavity, pulsed 912 nm laser performance is investigated using two kinds of Cr:YAG crystal with different unsaturated transmission (T _U) of 95% and 90% at 912 nm as the saturable absorbers. When the T _U = 90% Cr:YAG is used, as much as 2.6 W average output power for short pulsed 912 nm laser is achieved at an absorbed pump power of 34.0 W, corresponding to an optical efficiency of 7.6% and a slope efficiency of 20.3%. Moreover, 10.5 ns duration pulses and up to 2.3 kW peak power is obtained at the repetition rate around 81.6 kHz.     

Passively Q-switched GdVO<Subscript>4</Subscript>/Nd:GdVO<Subscript>4</Subscript> laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber under direct 879 nm diode pumping to the emitting level

A passively Q-switched 1.06 μm laser with Cr⁴⁺:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO₄/Nd:GdVO₄ crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr⁴⁺:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T ₀ = 90% Cr⁴⁺:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed.     

Diode-pumped Yb:Y<Subscript>2</Subscript>SiO<Subscript>5</Subscript>-LiB<Subscript>3</Subscript>O<Subscript>5</Subscript> cyan laser at 501.7 nm

We describe the output performances of the 928 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd:CLNGG under diode-laser pumping. An end-pumped Nd:CLNGG crystal yielded 1.3 W of continuous-wave output power for 17.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 11.2%. Furthermore, with 17.8 W of diode pump power and the frequency-doubling crystal LiB₃O₅ (LBO), a maximum output power of 260 mW in the blue spectral range at 464 nm has been achieved. The blue output power stability over 4 h is better than 3.2%.     

Passive picosecond and femtosecond mode-locking laser action of Yb<Superscript>3+</Superscript>:LuYSiO<Subscript>5</Subscript>

Efficient passive mode locking of a diode-pumped Yb³⁺:LuYSiO₅ (Yb:LYSO) laser is first demonstrated in experiment using a semiconductor saturable absorber mirror (SESAM), to the best of our knowledge. A stable pulse train with a repetition rate of 101 MHz is generated. The average output power of 2.13 W and the pulse duration of 3.9 ps. With a pair of SF10 uncoated prisms for dispersion compensation, we obtained pulses as short as 780 fs with center wavelength around 1042 nm, the average output power of 1.03 W and the peak power of 13.1 kW.     

Passive mode-locking in diode-pumped c-cut Nd:LuVO<Subscript>4</Subscript> laser with a semiconductor saturable-absorber mirror

We demonstrated a diode-pumped passively mode-locked c-cut Nd:LuVO₄ picosecond laser with a semiconductor saturable-absorber mirror (SESAM) at a wavelength of 1067.8 nm. Due to the wide bandwidth of 0.48 nm, stable mode-locking has been generated with a duration as short as 3.7 ps, which is shorter than for the a-cut Nd:LuVO₄ laser. A maximum output power of 1.67 W was achieved to give a highest peak power of 3.47 KW at 18 W absorbed pump power.     

Fabrication and characterization of double-wall carbon nanotube absorber for passive mode-locked Nd:GdVO<Subscript>4</Subscript> laser

Using the vertical evaporation technique we fabricated saturable absorbers by transferring the double-wall carbon nanotubes (DWCNT) onto a hydrophilic quartz substrate. The fast recovery time and the saturation intensity of the absorber were measured to be 228 fs and 130 μJ/cm², respectively, at 1060 nm. The modulation depth of the absorber was about 3.7%. Passive mode-locked Nd:GdVO₄ laser was demonstrated. The continuous wave mode-locked pulses pulse duration is 5.6 ps and the largest average output power is 1.2 W at the pump power of 9.5 W. To the best of our knowledge, this is the first demonstration of high power continuous wave mode locking laser with DWCNT absorber.     

Stable Q-switch mode-locking of Nd:YVO<Subscript>4</Subscript> lasers with a semiconductor saturable absorber

This paper reports on a passively mode-locked and Q-switched Nd:YVO₄ laser generating picosecond pulses with an average output power exceeding 7 W. In a first step Q-switch mode-locking was obtained by self Q-switching of a mode-locked oscillator with appropriate cavity design, pump power and output coupling. In a second system the Q-switching was actively controlled and stabilized by modulating the resonator internal losses with an acousto-optic modulator. In the Q-switch mode-locking operation the laser provided 12.8 ps long mode-locked pulses with a repetition rate of 80 MHz. The repetition rate of the Q-switch envelope was 185 kHz. The maximum pulse energy of a single ps pulse was 0.55 μJ which is 5.5 times the pulse energy measured for cw mode locking. The total energy of the pulses within the Q-switch envelope was 42 μJ. PACS  42.55.Xi; 42.60.Fc; 42.60.Gd     

Diode pumped Nd:Lu<Subscript>0.5</Subscript>Y<Subscript>0.5</Subscript>VO<Subscript>4</Subscript>-LBO red laser at 671 nm

We report a efficient compact red laser at 671 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode pumped Nd:Lu_0.5Y_0.5VO₄ laser on the ⁴ F _3/2-⁴ I _13/2 transition at 1342 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 17.8 W, as high as 2.25 W of continuous wave output power at 671 nm is achieved with 10-mm-long LBO. The optical-to-optical conversion efficiency is up to 12.6%, and the fluctuation of the red output power was better than 3.6% in the given 30 min.     

LD end-pumped c-Cut Nd:YVO<Subscript>4</Subscript>/KTP self-Raman laser at 560 nm

Intra-cavity sum frequency generation (SFG) of c-cut Nd:YVO₄ self-Raman laser was investigated for the first time. A 4 × 4 × 10 mm³ KTP crystal with a type-II phase-matching cutting angle (θ = 83.4°, φ = 0°) was used for SFG between the fundamental light at 1066 nm and first-Stokes light at 1178 nm. The laser system with different curvature radii of output couplers and different pulse repetition frequencies were investigated. At a pump power of 14 W and pulse repetition frequency of 20 kHz, the average output power of yellow-green laser at 560 nm up to 840 mW was achieved, corresponding to a slope efficiency of 7.6% and a conversion efficiency of 6% with respect to diode pump power.     

All solid-state CW Nd:GdVO<Subscript>4</Subscript>-GdCOB laser at 670 nm

We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode pumped Nd:GdVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1340 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.2 W, as high as 1.32 W of continuous wave (CW) output power at 670 nm is achieved with 15-mm-long GdCOB. The optical-to-optical conversion efficiency is up to 7.3%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

All solid-state continuous-wave intracavity frequency-doubled Nd:LuVO<Subscript>4</Subscript>-LBO red laser at 671.5 nm

We report for the first time a efficient compact red laser at 671.5 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:LuVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1343 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 4.3 W of continuous wave output power at 671.5 nm is achieved with 10-mm-long LBO. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Diode-pumped Nd:YAG ceramic laser at 946 nm passively Q-switched with a Cr4+:YAG saturable absorber

We demonstrate a diode-pumped Nd:YAG ceramic laser with emission at 946 nm that is passively Q-switched by single-crystal Cr⁴⁺:YAG saturable absorber. An average output power of 1.7 W is measured under 18.4 W of incident power using an output mirror with transmission T=4%. The corresponding optical-to-optical efficiency is 9.2%. The laser runs at a pulse repetition rate of 120 kHz and delivers pulses with energy of 14 μJ and duration of 80 ns, which corresponds to a peak power of 175 W.     

High-efficiency 17 W, 80 MHz repetition rate,passively mode-locked TEM<Subscript>00</Subscript> Nd:YAG oscillator pumped at 885 nm

We report on a passively mode-locked TEM₀₀ Nd:YAG oscillator with the beam quality at M ² = 1.1 by a semiconductor saturable absorber mirror under 885 nm laser diode direct pumping for the first time. A maximum average output power of 17 W at a repetition rate of 80 MHz with 39 ps pulse width was obtained under the absorbed pump power of 38 W, corresponding to an optical-optical efficiency of 44% and the slope efficiency of 69%, respectively.     

Continuous wave Nd:LuVO<Subscript>4</Subscript>-LBO blue laser under direct 888 nm diode laser pumping

We report the efficient blue laser at 458 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:LuVO₄ laser on the ⁴ F _3/2 → ⁴ I _9/2 transition at 916 nm. An LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.2 W, as high as 1.73 W of continuous wave (CW) output power at 458 nm is achieved. The optical-to-optical conversion efficiency is up to 9.5%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

Efficient blue light generated by intracavity frequency doubling of a 937 nm Nd:GGG laser with BiB<Subscript>3</Subscript>O<Subscript>6</Subscript>

Efficient CW intracavity frequency doubling of a diode-end-pumped Nd:GGG laser operating on ⁴ F _3/2 → ⁴ I _9/2 transitions at 937 nm has been demonstrated. A 10-mm-long BiB₃O₆(BiBO) crystal, cut for critical type I phase matching, was used for the intracavity frequency doubling of the laser. A maximum output power of 350 mW in the blue spectral range at 469 nm has been achieved at 18.3 W of pump power. The M² factors are 1.18 and 1.29 in X and Y directions, respectively.     

Continuous-wave simultaneous dual-wavelength operation at 912 nm and 1063 nm in Nd:GdVO<Subscript>4</Subscript>

A continuous-wave, diode-pumped Nd:GdVO₄ thin disk laser with simultaneous dual-wavelength emission at the 912 nm ⁴ F _3/2→⁴ I _9/2 quasi-three-level transition and the 1063 nm ⁴ F _3/2→⁴ I _11/2 four-level transition is demonstrated and analyzed. Output powers of 1.7 W at 912 nm and of 1.6 W at 1063 nm were achieved simultaneously from a 0.3-at.%, 300-μm thick Nd:GdVO₄ crystal that was multi-pass excited with 26.8 W of available diode pump power. Second harmonic generation to 456 nm with LiB₃O₅ yielded 0.96 W in 912 nm single-wavelength operation and 0.73 W in 912 nm/1063 nm dual-wavelength operation. PACS 42.55.Rz; 42.60.By; 42.65.Ky     

Nd:YVO₄ amplifier for ultrafast low-power lasers

An Nd:YVO₄ amplifier consisting of two modules end pumped at 808?nm at 30?W total absorbed power has been designed for efficient, diffraction-limited amplification of ultrafast pulses from low-power seeders. We investigated amplification with a 50?mW, 7?ps Nd:YVO₄ oscillator, a 2?mW, 15?ps Yb fiber laser, and a 30?mW, 300?fs Nd:glass laser. Output power as high as 9.5?W with 8?ps pulses was achieved with the 250?MHz vanadate seeder, whereas the 20?MHz fiber laser was amplified to 6?W. The femtosecond seeder allowed extracting Fourier-limited 4?ps pulses at 7?W output power. To our knowledge, these are the shortest pulses from any Nd:YVO₄ laser device with at least 7?W output power. This suggests a novel approach to exploit the gain bandwidth of vanadate amplifiers with high output power levels. Such amplifier technology promises to offer an interesting alternative to high-power thin disk oscillators at few picoseconds duration, as well as to regenerative amplifiers with low-repetition-rate fiber seeders.     

High power ultrafast Nd:YVO<Subscript>4</Subscript> laser mode locked by single wall carbon nanotube absorber

We use a single walled carbon nanotubes (SWCNTs) absorber to demonstrate a high power mode locking for Nd:YVO₄ lasers. Under the pump power of 12 W, continuous wave mode-locked (CWML) pulse were generated with the maximum average output power of 3.6 W and the pulse duration of 7.6 ps. The peak power and the single pulse energy of the mode-locked laser were up to 4.9 kW and 37.5 nJ, respectively. To our knowledge, this is the highest average output power of the CWML laser with the SWCNTs absorber reported.     

Compact diode-directly-pumped passively mode-locked TEM<Subscript>00</Subscript> Nd:GdVO<Subscript>4</Subscript> laser at 1341 nm using a semiconductor saturable absorber mirror

We report on a compact 880-nm diode-directly-pumped passively mode-locked TEM₀₀ Nd:GdVO₄ laser at 1341 nm with a semiconductor saturable absorber mirror (SESAM) for the first time. Under the absorbed pump power of 14.6 W, the maximum output power of 1.27 W was obtained at the repetition rate of 85.3 MHz with the pulse width of 45.3 ps, corresponding to an optical-optical efficiency of 8.8% and the slope efficiency of 33.3%, respectively. The beam quality factor was measured to be M ² = 1.18, indicating a TEM₀₀ mode.     

High efficiency passive mode-locked Nd:YVO<Subscript>4</Subscript> laser based on SESAM under direct pumping at 880 nm

We report on an 880 nm LD pumped passive mode-locked TEM₀₀ Nd:YVO₄ laser based on a semiconductor saturable absorber mirror (SESAM), with a high optical-to-optical conversion efficiency of 67.3%, and a slope efficiency of 71%. When the absorbed pump power was 11 W, 7.4 W average output power of 1064 nm continuous-wave mode-locked laser was achieved. To our knowledge, this is the highest optical-to-optical conversion efficiency among all the published reports of 880 nm LD pumped SESAM passive mode-locked lasers. The repetition rate of mode-locked pulse was 80 MHz with 26 ps pulse width. The maximum pulse energy and peak power were 92.5 nJ and 3.6 kW, respectively.