Femtosecond laser-induced dynamic alignment in Coulomb explosion of CO: Roles of laser wavelength, intensity and pulse duration

Dependences of dynamic alignment of CO molecules induced by intense femtosecond laser fields on laser wavelength, intensity and pulse duration are investigated by numerical simulations. A counting approach and a fourth-order Runge-Kutta algorithm are used to calculate the angular distribution and the time evolution of molecules. A two-step Coulomb explosion model of diatomic molecules in intense laser fields is used to determine the instant that CO molecular dynamic alignment is over. Our calculating results show that the linear polarizability and the damping force play an important role in the angular rotation of CO molecule in conditions of 800 nm laser wavelength and 10¹⁵ W/cm² laser intensity. The contributions of the second-order field-induced dipole moment and the higher-order correction term to molecular rotation acceleration comparing to the linear polarizability and damping force are negligible. The extent of dynamic alignment of CO molecules reduces with the increasing of laser intensity. The dynamic alignment time of CO molecules is tightly connected to the laser pulse duration. The angular distributions of CO molecules as the laser pulse length varied from 50 to 250 fs at laser intensity of 3×10¹⁴ W/cm² are shown and discussed.     

Excitation relaxation and structure of TPPS4 J-aggregates

The energy relaxation kinetics and the structure of the J-aggregates of water-soluble porphyrin 5,10,15,20-tetrasulphonatophenyl porphine (TPPS₄) were investigated in aqueous medium by means of time-resolved fluorescence spectroscopy and confocal laser-scanning fluorescence microscopy. The excitation of the J-aggregates, at excitation intensities higher than ∼10¹⁵ photons/cm² per pulse, results in a remarkable decrease of the fluorescence quantum yield and in the appearance of an additional, non-exponential energy relaxation channel with a decay constant that depends on the excitation intensity. This relaxation mechanism was attributed to the exciton single-singlet annihilation. The exciton lifetime in the absence of the annihilation was calculated to be ∼150 ps. Using exciton annihilation theory, the exciton migration within the J-aggregates could be characterized by determining the exciton diffusion constant (1.8±0.9)  10⁻³ cm²/s and the hopping time (1.2±0.6) ps. Using the experimental data, the size of the J-aggregate could be evaluated and was seen to yield at least 20 TPPS₄ molecules per aggregate. It was shown by means of confocal fluorescence laser scanning microscopy that TPPS₄ does self-associate in polyvinyl alcohol (PVA) at acidic pH forming molecular macro-assemblies on a scale of ∼1 μm in PVA matrices.     

Molecular ion yield enhancement induced by gold deposition in static secondary ion mass spectrometry

Static ToF-SIMS was used to evaluate the effect of gold condensation as a sample treatment prior to analysis. The experiments were carried out with a model molecular layer (Triacontane M = 422.4 Da), upon atomic (In⁺) and polyatomic (Bi₃⁺) projectile bombardment. The results indicate that the effect of molecular ion yield improvement using gold metallization exists only under atomic projectile impact. While the quasi-molecular ion (M+Au)⁺ signal can become two orders of magnitude larger than that of the deprotonated molecular ion from the pristine sample under In⁺ bombardment, it barely reaches the initial intensity of (M−H)⁺ when Bi₃⁺ projectiles are used. The differences observed for mono- and polyatomic primary ion bombardment might be explained by differences in near-surface energy deposition, which influences the sputtering and ionization processes.     

Effect of residual oxygen on ionization processes of Si and Si sputtered from Si(1 1 1)-7 × 7 surface

The effect of residual oxygen impurity on ionization processes of Si⁺ and Si²⁺ has been studied quantitatively. In this study, ion sputtering experiments were carried out for a Si(1 1 1)-7 × 7 surface, irradiated with 9-11 keV Ar⁰ and Kr⁰ beam. Even if the oxygen concentration is less than the detection limit of Auger electron spectrometry, SiO⁺ and SiO₂⁺ ions have been appreciably observed. Moreover, as the SiO⁺ and SiO₂⁺ yields increases, the Si⁺ yield is slightly enhanced, whereas the Si²⁺ yield is significantly reduced. From the incidence angle dependence of secondary ion yields, it is confirmed that Si⁺* (Si⁺ with a 2p hole) created in the shallow region from the surface exclusively contributes to Si²⁺ formation. By assuming that the SiO⁺ and SiO₂⁺ yields are proportional to the residual oxygen concentration, these observations are reasonably explained: The increase of Si⁺ with the increase of residual oxygen is caused by a similar effect commonly observed for oxidized surfaces. The decrease of Si²⁺ yield can be explained by the inter-atomic Auger transition between the residual oxygen impurity and Si⁺*, which efficiently interferes the Si²⁺ formation process.     

Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films

HfO₂ is one of the most important high refractive index materials for depositing high power optical mirrors. In this research, HfO₂ thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (LIDT) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. The results indicate that the LIDT of the as-grown sample is only 3.96 J/cm², but it is increased to 8.98 J/cm² after annealing under temperature of 200 °C in atmosphere. By measuring the laser weak absorption and SIMS of the samples, we deduced that substoichiometer is the main reason for the low LIDT of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization.     

Growth and characterization of a new organic NLO material: Glycine nitrate

Single crystals of glycine nitrate [(C₂H₆NO₂)⁺ · (NO₃)⁻] were grown using submerged seed solution method. The crystals were characterized by using single crystal X-ray diffraction and density measurements. Spectroscopic, thermal and optical studies were carried out for analyzing the presence of the functional groups, thermal stability, decomposition and transparency of the sample. These studies showed that the crystals are thermally stable upto 145 °C and transparent for the fundamental and second harmonic generation of Nd:YAG (λ = 1064 nm) laser. Second harmonic generation (SHG) conversion efficiency was investigated to explore the NLO characteristics of this material. Microhardness and dielectric studies were also carried out.     

Substrate effect on electronic sputtering yield in polycrystalline fluoride (LiF, CaF2 and BaF2) thin films

Influence of substrate on electronic sputtering of fluoride (LiF, CaF₂ and BaF₂) thin films, 10 and 100 nm thin, under dense electronic excitation of 120 MeV Ag²⁵⁺ ions irradiation is investigated. The sputtering yield of the films deposited on insulating (glass) and semiconducting (Si) substrates are determined by elastic recoil detection analysis technique. Results revealed that sputtering yield is higher, up to 7.4 × 10⁶ atoms/ion for LiF film on glass substrate, than that is reported for bulk materials/crystals (∼10⁴ atoms/ion), while a lower value of the yield (2.3 × 10⁶ atoms/ion) is observed for film deposited on Si substrate. The increase in the yield for thin films as compared to bulk material is a combined effect of the insulator substrate used for deposition and reduced film dimension. The results are explained in the framework of thermal spike model along with substrate and size effects in thin films. It is also observed that the material with higher band gap showed higher sputtering yield.     

Effects of electron relaxation on multiple harmonic generation from metal surfaces with femtosecond laser pulses

Calculations are presented for the first four (odd and even) harmonics of an 800 nm laser from a gold surface, with pulse widths ranging from 100 down to 14 fs. For peak laser intensities above 1 GW/cm² the harmonics are enhanced because of a partial depletion of the initial electron states. At 10¹¹ W/cm² of peak laser intensity the calculated conversion efficiency for 2nd-harmonic generation is 3 × 10⁻⁹, while for the 5th-harmonic it is 10⁻¹⁰. The generated harmonic pulses are broadened and delayed relative to the laser pulse because of the finite relaxation times of the excited electronic states. The finite electron relaxation times cause also the broadening of the autocorrelations of the laser pulses obtained from surface harmonic generation by two time-delayed identical pulses. Comparison with recent experimental results shows that the response time of an autocorrelator using nonlinear optical processes in a gold surface is shorter than the electron relaxation times. This seems to indicate that for laser pulses shorter than ∼30 fs, the fast nonresonant channel for multiphoton excitation via continuum-continuum transitions in metals becomes important as the resonant channel becomes slow (relative to the laser pulse) and less efficient.     

Resonantly enhanced three-photon excitation spectra of lithium

We present the first measurement on the resonantly enhanced three-photon excitation spectra of natural lithium using a Nd:YAG laser pumped dye laser in conjunction with a thermionic diode ion detector. Exploiting the linear and circular polarizations, the np ²P_3/2(8 ? n ? 11) and nf  ²F_7/2 (8 ? n ? 38) series have been observed via three-photon excitation from the ground state. The measured level energies reveal a dynamic shift from calculated values, which increases with an increase of the principal quantum number n. The ac stark shift and line broadening mechanisms are studied as a function of laser intensity. It is noted that the width increases and the line center shifts towards the higher energy side as the laser intensity is increased. The maximum observed shift for the 12f ²F_7/2 line is 0.33 cm⁻¹ corresponding to the laser intensity variation from 1.34 × 10¹² W/m² to 1.03 × 10¹³ W/m², whereas its width increases from 0.36 cm⁻¹ to 0.82 cm⁻¹.     

Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

We have investigated cathodeluminescence (CL) of Ge implanted SiO₂:Ge and GeO₂:Ge films. The GeO₂ films were grown by oxidation of Ge substrate at 550 °C for 3 h in O₂ gas flow. The GeO₂ films on Ge substrate and SiO₂ films on Si substrate were implanted with Ge-negative ions. The implanted Ge atom concentrations in the films were ranging from 0.1 to 6.0 at%. To produce Ge nanoparticles the SiO₂:Ge films were thermally annealed at various temperatures of 600-900 °C for 1 h in N₂ gas flow. An XPS analysis has shown that the implanted Ge atoms were partly oxidized. CL was observed at wavelengths around 400 nm from the GeO₂ films before and after Ge⁻-implantation as well as from SiO₂:Ge films. After Ge⁻-implantation of about 0.5 at% the CL intensity has increased by about four times. However, the CL intensity from the GeO₂:Ge films was several orders of magnitude smaller than the intensity from the 800 °C-annealed SiO₂:Ge films with 0.5 at% of Ge atomic concentration. These results suggested that the luminescence was generated due to oxidation of Ge nanoparticles in the SiO₂:Ge films.     

Sr2CeO4:Eu and Sr2CeO4:5 mol% Eu, 3 mol% Dy microphosphors: Wet chemistry synthesis from hybrid precursor and photoluminescence properties

In this article, Sr₂CeO₄:x mol% Eu³⁺ and Sr₂CeO₄:5 mol%Eu³⁺, 3 mol% Dy³⁺ phosphors were synthesized from assembling hybrid precursors by wet chemical method. As-prepared samples present uniform grain-like morphology and the particle size is about 0.2 μm. The luminescence spectra of Sr₂CeO₄:x mol% Eu³⁺ have been measured to examine the influence of the intensity of red emission lines for Eu³⁺ on the concentration of Eu³⁺, showing that the intensity of the red emission increases with an increase of the concentration from 1 to 5 mol%. Additionally, from the emission spectra of Sr₂CeO₄:5 mol%Eu³⁺, 3 mol% Dy³⁺ phosphors, the characteristic lines of Dy³⁺ have also been observed. This result indicates that there also exists an energy transfer process between Sr₂CeO₄ and Dy³⁺.     

All-solid-state continuous wave intracavity frequency-tripled Nd:YVO4-LiB3O4 blue laser using double-resonant approach

In the paper, a new way of intracavity frequency-tripled all-solid-state laser to generate continuous wave blue coherent radiation is firstly demonstrated. High-efficiency of continuous wave third harmonic generation using the approach of double-resonance at fundamental frequency and second harmonic is developed by insertion of one wedge prism for the phase control. The maximum output power at the wavelength of 447 nm, which was generated with two long LiB₃O₄ crystals by noncritical phase matching, is about 1.15 W with a beam quality factor of M² of 1.05. From the experimental results, the generation of continuous wave blue light using this way with higher conversion efficiency can be achieved.     

Nanoplasma dynamics in Xe clusters driven by ultraintense laser fields

We present a theoretical and computational study of the properties and the response of the nanoplasma and of outer ionization in Xe_n clusters (n = 55–2171, initial cluster radius R₀ = 8.7–31.0 ?) driven by ultraintense near-infrared laser fields (peak intensity I_M = 10¹⁵–10²⁰ Wcm^-2, temporal pulse length τ= 10–100 fs, and frequency ν= 0.35 fs^-1). The positively charged high-energy nanoplasma produced by inner ionization nearly follows the oscillations of the fs laser pulse and can either be persistent (at lower intensities of I_M = 10¹⁵–10¹⁶ Wcm^-2 and/or for larger cluster sizes, where the electron energy distribution is nearly thermal) or transient (at higher intensities of I_M = 10¹⁸–10²⁰ Wcm^-2 and/or for smaller cluster sizes). The nanoplasma is depleted by outer ionization that was semiquantitatively described by the cluster barrier suppression electrostatic model, which accounts for the cluster size, laser intensity and pulse length dependence of the outer ionization yield. The electrostatic model was further utilized for estimates of the laser intensity and pulse width dependence of the border radius R₀ ^(I) for the attainment of complete outer ionization at , while at R₀ > R₀ ^(I) a persistent nanoplasma prevails. R₀ ^(I) establishes an interrelationship between electron dynamics and nuclear Coulomb explosion dynamics in ultraintense laser-cluster interactions.     

Cation spectroscopy of 3,4-difluoroaniline by two-color resonant two-photon mass-analyzed threshold ionization

We applied the two-color resonant two-photon mass-analyzed threshold ionization technique to record the vibrationally resolved cation spectra of 3,4-difluoroaniline (34DFA) via the 0⁰, X¹, 6b¹, and I² levels of the S₁ state. The adiabatic ionization energy of this molecule was determined to be 64 195 ± 5 cm⁻¹. Most of the observed active modes of the 34DFA cation in the D₀ state are related to the in-plane ring deformation vibrations. Comparing these data with those of 3-fluoroaniline and 4-fluoroaniline, one can learn the effects of fluorine substitution on the electronic transition and molecular vibration.     

Analysis of intensities of positive and negative ion species from silicon dioxide films using time-of-flight secondary ion mass spectrometry and electronegativity of fragments

Intensities of positive and negative ion species emitted from thermally oxidized and plasma-enhanced chemical vapor deposited (PECVD) SiO₂ films were analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and the Saha-Boltzmann equation. Intensities of positive and negative secondary ion species were normalized to those of ²⁸Si⁺ and ²⁸Si⁻ ions, respectively, and an effective temperature of approximately (7.2 ± 0.1) × 10³ K of the sputtered region bombarded with pulsed 22 kV Au₃⁺ primary ions was determined. Intensity spectra showed polarity dependence on both n and m values of Si_nO_m fragments, and a slight shift to negative polarity for PECVD SiO₂ compared to thermally oxidized SiO₂ films. By dividing the intensity ratios of negative-to-positive ions for PECVD SiO₂ by those for thermally oxidized SiO₂ films to cancel statistical factors, the difference in absolute electronegativity (half the sum of ionization potential and electron affinity of fragments) between both films was obtained. An increase in electronegativity for SiO_m (m = 1, 2) and Si₂O_m (m = 1-4) fragments for PECVD SiO₂ films compared to thermally oxidized films was obtained to be 0.1-0.2 Pauling units, indicating a more covalent nature of Si-O bonds for PECVD SiO₂ films compared to the thermally oxidized SiO₂ films.     

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

The general equation T_ove = L cos  θ ln(R_exp/R₀ + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO₂/SiO₂/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO₂ layer to the thickness of the HfO₂ overlayer was counterbalanced by multiplying the ratio between the intensity of Si⁴⁺ from a thick SiO₂ film and that of Si⁰ from a Si(1 0 0) substrate to the intensity of Si⁴⁺ from the HfO₂/SiO₂/Si(1 0 0) film. With this approximation, the thickness levels of the HfO₂ overlayers showed a small standard deviation of 0.03 nm in a series of HfO₂ (2 nm)/SiO₂ (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO₂ overlayers in a series of HfO₂ (1-4 nm)/SiO₂ (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO₂ overlayer could be determined.     

Enhancement of second harmonic intensity in thermally poled ferroelectric nanocrystallized glasses in the BaO-TiO2-SiO2 system

The transparent nanocrystallized (heat-treatment: 750 ^°C, 1 h) glasses consisting of ferroelectric Ba₂TiSi₂O₈ nanocrystals (size: 100-200 nm) have been prepared in 40BaO-20TiO₂-40SiO₂ glass, and the effect of a thermal poling (DC electric voltage: 8.8 kV/cm, temperature: 110-300 ^°C, time: 1 h) on the second harmonic (SH) intensity has been examined. It is found that the formation behavior of nanocrystals at the surface differs from that in the interior of glass, giving a new insight into the well-known concept for nanocrystallization or homogeneous nucleation in glass. The Maker fringe patterns with fine structures are observed, indicating a high orientation of the polarization axes of Ba₂TiSi₂O₈ crystals formed at the surface. The prominent enhancement in the SH intensity is observed due to thermal poling, demonstrating that thermal poling is an effective method in enhancing anisotropic polarization of ferroelectric Ba₂TiSi₂O₈ nanocrystals in crystallized glasses. The present study proposes that the Maker fringe pattern for SH intensity of nanocrystallized glasses is very sensitive to the anisotropic polarization of nanocrystals at the surface, indicating the importance of the Maker fringe technique for the characterization of nanocrystals in materials.     

Enhanced emission of Er from alternately Er doped Si-rich Al2O3 multilayer film with Si nanocrystals as broadband sensitizers

Alternately Er doped Si-rich Al₂O₃ (Er:SRA) multilayer film, consisting of alternate Er-Si-codoped Al₂O₃ (Er:Si:Al₂O₃) and Si-doped Al₂O₃ (Si:Al₂O₃) sublayers, has been synthesized by co-sputtering from separated Er, Si, and Al₂O₃ targets. The dependence of Er³⁺ related photoluminescence (PL) properties on annealing temperatures over 700-1100 °C was studied. The maximum intensity of Er³⁺ PL, about 10 times higher than that of the monolayer film, was obtained from the multilayer film annealed at 950 °C. The enhancement of Er³⁺ PL intensity is attributed to the energy transfer from the silicon nanocrystals in the Si:Al₂O₃ sublayers to the neighboring Er³⁺ ions in the Er:Si:Al₂O₃ sublayers. The PL intensity exhibits a nonmonotonic temperature dependence: with increasing temperature, the integrated intensity almost remains constant from 14 to 50 K, then reaches maximum at 225 K, and slightly increases again at higher temperatures. Meanwhile, the PL integrated intensity at room temperature is about 30% higher than that at 14 K.     

Calculation of band offset in chalcopyrite system

A recently reformulated tight binding method is used to calculate valence band offset (VBO) at the CuInSe₂/CuGaSe₂ heterojunction. The hybrid energy is calculated in the s²p² configuration and a new model for the average hybrid energy is used. The theoretical VBO value of 0.05 eV is in good agreement with recent experimental value of 0.04 eV. The value of conduction band offset is 0.60 eV giving a type I alignment. The VBO varies linearly with bond length difference (l), as VBO=(0.24)l.     

Generation of subpicosecond vacuum ultraviolet pulses at 126 nm by using harmonics of a subpicosecond Ti:Sapphire laser

Subpicosecond vacuum ultraviolet (VUV) pulses at the wavelength of 126 nm have been generated in rare gases as a result of the 7th harmonic radiation of a subpicosecond Ti:Sapphire laser oscillating at 882 nm. The VUV harmonic intensity was optimized in Xe at the pressure of 1.2 Torr. The behavior of the harmonic emission was qualitatively reproduced by the classical nonlinear optics. The increase of the harmonic intensity was limited by multiphoton ionization of Xe.