共查询到19条相似文献,搜索用时 156 毫秒
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用分子束外延方法在GaAs(100)衬底上成功生长了高质量的Zn1-xMnxSe/ZnSe(x=0.16),超晶格结构,用X射线衍射和低温光致发光(PL)对其结构,应变分布以及光学性能进行了研究,结果表明,2K温度下,Zn1-xMnxSe/ZnSe超晶格的光致发光中主发光峰对应于ZnSe阱中基态电子和基态轻空穴之间的自由激子跃迁,而且其峰位相对于ZnSe薄膜材料的自由激子峰有明显移动。其中,当超晶 相似文献
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测量了用热壁外延(HWE)生长的不同组分(0≤x≤0.98)的Zn1-xMnxSe薄膜在温度为300K下的反射光谱,用X射线能谱测定样品实际的组分x值,由此获得了其能隙Eg与组分x的关系:在0〈x〈0.2组分范围,Eg随x的变化显示了反常现象,当x〉0.2时,能隙Eg随x线性增大。在室温和低温下测量了样品的光致发光,除观测到Mn^2+离子内部4T1→6A1发光峰外,在其低能边观测到一个较宽的发光峰 相似文献
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测量了用热壁外延(HWE)生长的不同组分(0≤x≤0.98)的Zn1-xMnxSe薄膜在温度为300K下的反射光谱,用X射线能借测定样品实际的组分x值,由此获得了其能隙Eg与组分x的关系:在O<X<0.2组分范围,Eg随x的变化显示了反常现象,当X>0.2时,能隙Eg随x线性增大。在室温和低温下测量了样品的光致发光,除观测到Mn2+离子内部4T1→6A1发光峰外,在其低能边观测到一个较宽的发光峰,对结果进行了分析讨论。 相似文献
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本文测量了Zn1-xMnxS在不同Mn浓度(0.001<x<0.5)下的发射谱和衰减曲线,并且用Yokota和Tanimoto模型进行了分析在对4T1衰减曲线进行拟合时发现衰减曲线是两种不同弛豫过程之和:(1)孤立的Mn2-离子的4T1衰减,它确定衰减曲线的尾部,有较长的衰减寿命;(2)Mn2-离子聚集体(例如Mn2-离子对)的4T1衰减,这种衰减比单个Mn2-离子的衰减更快.我们深入分析了在x=0.062,T=80K时的Zn1-xMnxS的发射谱及其衰减曲线,得到两个衰减寿命:τ1=70μs,τ2>1000μs,这表明在高Mn浓度时存在着两个弛豫过程:一个是较快的,另一个则是较慢的,根据Goede等人的实验结果可以断定较慢的过程来自孤立的Mn2-离子,那么便可以判知较快的过程是来源于Mn2-离子对.正是高Mn浓度下的Zn1-xMnxS中存在着Mn2+-Mn2+离子对,在其间有能量迁移以及它和能量受主之间的能量传递造成了该体系中的IR发射. 相似文献
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Si/Ge应变层超晶格的椭偏光谱 总被引:2,自引:0,他引:2
测量了几种不同组分的(Si)M/(Ge)N应变超晶格材料的椭偏光谱(2.0~5.0eV),并得到了其介电函数谱;应用介电函数的临界点理论,研究了(Si)M/(Ge)N应变超晶格材料的光学性质。发现短周期Si/Ge应变超晶格除了具有明显的E1和E2带间跃迁外,还存在与应力和超晶格能带的折迭效应有关的跃迁峰,其能量分别位于2.3~3.0eV和3.3~4.0eV范围内 相似文献
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稀磁半导体Zn1—xCoxSe的光谱特性 总被引:2,自引:0,他引:2
本文首次报道一类新型半导体材料:含Co^+6+离子的稀磁半导体Zn1-xCoxSe晶体的光谱特性研究实验结果。对组分x=0.001,0.0097,0.030,0.037系列样品,在73K-300K范围内分别在可见和近红外区测量了吸收光谱和光致发光谱。实验观测到一系列与x值无关的吸收峰和光致发光峰,两者一一对应,它们分别对应于具有Td对称的晶体场中Co^+^+离子不同能级间的跃迁,对这些峰进行了初步 相似文献
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Temperature dependence of biaxial strain and its influence on phonon and band gap of GaN thin film 下载免费PDF全文
Hexagonal GaN epilayer grown on sapphire substrate by metal organic
chemical vapour deposition (MOCVD) is studied using Raman scattering
and photoluminescence in a temperature range from 100\,K to 873\,K.
The model of strain (stress) induced by the different lattice
parameters and thermal coefficients of epilayer and substrate as a
function of temperature is set up. The frequency and the linewidth of
$E_2^{\rm high}$ mode in a GaN layer are modelled by a theory with
considering the thermal expansion of the lattice, a symmetric decay
of the optical phonons, and the strain (stress) in the layer. The
temperature-dependent energy shift of free exciton A is determined by
using Varshni empirical relation, and the effect of strain (stress)
is also investigated. We find that the strain in the film leads to a
decreasing shift of the phonon frequency and an about
10meV-increasing shift of the energy in a temperature range from
100\,K to 823\,K. 相似文献
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Schüller C Broocks KB Schröter P Heyn Ch Heitmann D Bichler M Wegscheider W Chakraborty T Apalkov VM 《Physical review letters》2003,91(11):116403
In photoluminescence spectroscopy of a low-mobility two-dimensional electron gas subjected to a quantizing magnetic field, we observe an anomaly around nu=1 / 3 at a very low temperature (0.1 K) and an intermediate electron density (0.9 x 10(11) cm(-2)). The anomaly is explained as due to perturbation of the incompressible liquid at the Laughlin state due to close proximity of a localized charged exciton which creates a fractionally charged quasihole in the liquid. The anomaly of approximately 2 meV can be destroyed by applying a small thermal energy of approximately 0.2 meV that is enough to close the quasihole energy gap. 相似文献
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We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers.By measuring the exciton decay time as a function of the monitored emission energy at different temperatures,we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 12OK. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results. 相似文献
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The absorption spectrum of Cs2ZnI4 thin films in the energy range 3–6 eV at temperatures from 90 to 340 K has been investigated. It is established that this compound belongs to direct-gap insulators. Low-frequency exciton excitations are localized in ZnI4 structural elements of the lattice. Phase transitions at 280 K (paraelectric phase ? incommensurate phase), 135 K (incommensurate phase ? monoclinic ferroelastic phase), and 96 K (monoclinic phase ? triclinic ferroelastic phase) have been found from the temperature dependences of the spectral position and halfwidth of the low-frequency exciton band. Additional broadening of the exciton band is observed for ferroelastic phases; it is likely to be due to exciton scattering from strain fluctuations near domain walls. 相似文献
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Yu. V. Osipov 《Russian Physics Journal》1967,10(4):43-45
Absorption spectra at 77° K near the direct (κ = 0) exciton transition are reported for deformed and undeformed single-crystal films of n-type Ge oriented on (111); Elliott's theory is applied. The optical width of the forbidden band for this transition is found as Eg 0 = (0.8821 ±±0.0002) eV, while the exciton binding energy is found as Eex(0) = = (0.0016±0.0003) eV for undeformed Ge at 77 ° K. The mean temperature coefficient of Eg for κ = 0 in the range 77 °–297 ° K is (dEg/ /dT)p =?3.50 · 10?4 eV/deg. The effects of thermoelastic deformation on the exciton spectrum give (dEg/dT)d = (?1.5±0.1) · 10?4 eV/deg. The half-width σ ≈ 5 · 10?4 eV of the exciton peak gives the exciton lifetime as gt ≥ 10?12 sec. 相似文献
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利用MOCVD技术在GaAs衬底上外延生长了非对称量子阱结构CdSe/ZnSe材料,通过对其稳态变温光谱及变激发功率光谱,研究了其发光特性。稳态光谱表明:在82~141K时,观测到的两个发光峰来源于不同阱层厚度的量子阱激子发光,用对比实验验证了高能侧发光的来源。宽阱发光强度先增加后减小,将其归结为激子隧穿与激子热离化相互竞争的结果。通过Arrhenius拟合,对宽阱激子热激活能进行了计算。82K时变激发功率PL光谱表明:由于激子隧穿的存在,使得窄阱发光峰位不随激发功率变化而变化,宽阱发光峰位随激发功率增加发生了蓝移,并对激子隧穿进行了实验验证。 相似文献
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The temperature-dependent photoluminescence behaviour of chemical vapour transport (CVT)-grown ZnSe crystal is investigated. A new emission band appears when temperature is reduced to 155K. It is shown that the new emission band is strongly related to defect emission peaked at around 2.1 eV. The emergence of the new emission band is accompanied by decreasing emission intensity of free exciton, as well as redshiR of defect emission with temperature decreases. The activated energy of the defect state is estimated to be 60.6 meV, which is approximately equal to the energy difference between the new emission and the free exciton emission at 155K. 相似文献
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Interest in the Ga-site acceptors Be and Mg was stimulated by the possibility that they might produce efficient luminescence on association with O, analogous to the well-known red Zn-O luminescence in GaP but at higher transition energy. Attention was directed to diffusion doping by Be and Mg of GaP O-doped during growth because the reactivity of Be and Mg with O renders double doping during crystal growth very difficult. Structured green donor-acceptor pair spectra were observed at 1.6°K from many Be-diffused crystals, yielding an accurate measure of (EA)BE, 50 ± 1 meV. Moderately efficient orange-red luminescence was also observed below ∼ 100 °K from these crystals, but the intensity of this luminescence decreased rapidly to negligible levels by ∼ 200°K. This luminescence also contains sharp structure at 1.6°K, of a form characteristic of the decay of excitons bound to complex centres. Many sharp phonon replicas occur, involving local modes as well as characteristic GaP modes. One set of no-phonon lines, at least, near 2.19 eV, shows zero-field splitting, luminescence decay times and behaviour in magnetic and external strain fields characteristic of exciton decay at a centre with <100>; or <111>-type symmetry axes, containing no extra electronic particles. The exciton state is split by 2.4 meV by J-J coupling, and the axial field of the centre splits the hole states by ∼ 1.0 meV. These bound excitons are specifically characteristics of diffused GaP and appear analogous to bound excitons observed below 2.12 eV in Zn-diffused GaP. It is probable that the relevant centres contain diffusion components such as Be or Zn interstitials and improbable that OP is involved. By contrast, weak orange bound exciton luminescence observed in Mg-diffused GaP does involve O, presumably as OP. No analysis of the magneto-optical behaviour of this Mg-related bound exciton was possible in our crystals, so its symmetry axis was not established. It is possible that this is the MgGa-OP bound exciton. If so, the two-fold reductions in the exciton localisation energy from ∼ 0.32 eV to ∼ 0.15 eV and in the mass of the Ga-site substituent has produced dramatic changes in the form of the phonon cooperation between the Zn-O and “Mg-O” excitons. The “Mg-O” exciton luminescence is not dominant in our crystals, even at low temperature. The exciton state is again split by a local crystal field as well as by J-J coupling, but here the former splitting is predominant; 2∈0 = 3.9 meV, Δ = 0.60 meV. 相似文献