光自旋霍尔效应及面内光自旋分离

当宽度有限的实际光束反射和折射时,左旋光和右旋光成分会发生垂直于入射面的空间分离,这一新奇的光自旋霍尔效应近来引起了人们的广泛关注.文章介绍了光自旋霍尔效应的研究进展,特别关注了纳米量级分离的测量方面进展.作者还发现在入射面内也会出现光自旋分离现象,并对这一新现象进行了理论分析和实验研究,实验测量数据和理论计算结果非常符合.     

光自旋霍尔效应中的交叉偏振特性研究

从光束角谱理论出发建立了描述光自旋霍尔效应的傍轴传输模型, 利用这一模型分析了光自旋霍尔效应中的交叉偏振特性. 通过分析交叉偏振效应强度和入射角变化的规律, 发现交叉偏振效应越强, 光自旋霍尔效应中的自旋分裂越大. 为便于实验观察, 将入射角选在光自旋霍尔效应较强的布儒斯特角附近, 观测到了强的交叉偏振效应. 增大交叉偏振分量的同时减小初始偏振分量, 可显著增强光自旋霍尔效应. 这一调控方法为研制基于光自旋霍尔效应的新型光子器件提供了理论基础.     

光自旋霍尔效应及其研究进展

光束在经过非均匀介质后,自旋角动量相反(左、右旋圆偏振)的光子在垂直于入射面的横向相互分离,造成光束的自旋分裂,这种现象叫做光自旋霍尔效应.它类似于电子系统中的自旋霍尔效应:自旋光子扮演自旋电子的角色,而折射率梯度则起外场作用.光自旋霍尔效应为操控光子提供了新的途径,在纳米光学、量子信息和半导体物理方面具有重要的应用前景;同时由于它与凝聚态和高能物理中的带电粒子自旋霍尔效应有高度的相似性和共同的拓扑根源,所以又为测量自旋霍尔效应这类弱拓扑现象提供了独特而又方便的机会.文章简单介绍了光自旋霍尔效应,并总结了近几年国内外的研究进展.     

光轴平行晶体表面时的锥光干涉图

针对光轴平行晶体表面时的锥光干涉图,提出了计算干涉场中振幅和相位分布的方法,据此绘制完整的干涉图,方便地显示出晶体参数改变时锥光干涉图的变化规律．用CCD摄像机拍摄了铌酸锂晶体的锥光干涉图,结果与理论完全一致。     

转换反射中光自旋霍尔效应的自旋堆积方向

从理论上和实验上研究了转换反射中光自旋霍尔效应的自旋堆积方向的方法,建立了描述光束在空气-棱镜界面反射的自旋堆积模型,揭示了横移与光束入射偏振角的定性关系。研究发现,当入射角小于布儒斯特角时,随着入射偏振角的逐渐增大,自旋堆积的方向发生反转。而当入射角大于布儒斯特角时,自旋堆积的方向不再随入射偏振角的变化而反转。结果表明,在光束入射角为确定值且小于布儒斯特角的情况下,可以通过调控光束的入射偏振角转换自旋堆积的方向。转换自旋堆积方向的研究为有效调控光自旋霍尔效应提供了新的途径。     

Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator

An intrinsic contribution to the spin Hall effect in two‐dimensional silicene is considered theoretically within the linear response theory and Green's function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low bias to the conventional insulator phase at higher voltages. This transition resembles the recently reported phase transition in bilayer graphene. The spin–orbit interaction responsible for this transition in silicene is much stronger than in graphene, which should make the transition observable experimentally. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

多层介质中的光自旋霍尔效应研究

本文研究了光束通过多层介质分界面的光自旋霍尔效应. 以三层介质为例,建立了光束通过棱镜-空气-棱镜结构的传输模型,揭示了横移与空气介质的厚度、折射率梯度以及入射角等因素的定性关系. 发现对某一特定的圆偏振光束,改变两棱镜之间的折射率梯度可以调控横移,反射场与传输场的横移方向取决于折射率梯度. 相对于两层介质来说,高斯光束通过三层介质能明显地增强光自旋霍尔效应. 研究多层介质中光自旋霍尔效应横移的影响因素可为调控和增强光自旋霍尔效应提供理论依据. 关键词： 光自旋霍尔效应 横移 折射率梯度     

光轴在入射面内的负单轴晶体e光全反射角公式

利用惠更斯作图法推导了光轴在入射面内的负单轴晶体e光全反射角公式i=arcsin1n(n2o-n2e)cos2α n2e,并运用该公式设计和改进格兰-汤姆孙偏振棱镜.研究表明,当光轴垂直于分界面且θ=26°时,所设计的改进型格兰-汤姆孙偏振棱镜用料最省.     

Spin Hall effect of a light beam in anisotropic metamaterials

<正>We theoretically investigate a switchable spin Hall effect of light(SHEL) in reflection for three specific dispersion relations at an air-anisotropic metamaterial interface.The displacements of horizontal and vertical polarization components vary with the incident angle at different dispersion relations.The transverse displacements can be obtained with the relevant metamaterial whose refractive index can be arbitrarily tailed.The results of the SHEL in the metarnaterial provide a new way for manipulating the transverse displacements of a specific polarization component.     

超构材料中的光学量子自旋霍尔效应

电子的量子自旋霍尔效应的发现推进了当今凝聚态物理学的发展,它是一种电子自旋依赖的具有量子行为的输运效应.近年来,大量的理论和实验研究表明,描述电磁波场运动规律的麦克斯韦方程组内禀了光的量子自旋霍尔效应,存在于界面的倏逝波表现出强烈的自旋与动量关联性.得益于新兴的光学材料:超构材料(metamaterials)的发展,不仅能够任意设定光学参数,同时也能引入很多复杂的自旋-轨道耦合机理,让我们能够更加清晰地了解和验证其中的物理机理.本文对超构材料中量子自旋霍尔效应做了简要的介绍,内容主要包括真空中光的量子自旋霍尔效应的物理本质、电单负和磁单负超构材料能带反转导致的不同拓扑相的界面态、拓扑电路系统中光量子自旋霍尔效应等.     

Nonparaxial propagation of Hermite-Laguerre-Gaussian beams in uniaxial crystal orthogonal to the optical axis

Analytical expressions for the three components of the nonparaxial propagation of a Hermite-Laguerre-Gaussian （HLG） beam in uniaxial crystal orthogonal to the optical axis are derived. The intensity distribution of an HLG beam and its three components propagating in a uniaxial crystal orthogonal to the optical axis are demonstrated by numerical examples. Although the y and z components of an HLG beam in the incident plane are both equal to zero, they emerge upon propagation inside the uniaxial crystal. Moreover, the beam profile of the x component is relatively stable and the beam profiles of the y and z components have the same evolution law. If the ratio of the extraordinary refractive index to the ordinary refractive index is larger than unity, the beam profile of the HLG beam is elongated in the x direction and generally rotates clockwise. Otherwise, the beam profile of the HLG beam is elongated in the y direction and generally rotates anticlockwise. This research is beneficial to the optical trapping and nonlinear optics involved in the rotation of a beam profile.     

铁磁石墨烯体系的CT不变量子自旋霍尔效应

文章作者在垂直磁场作用下的铁磁石墨烯体系里预言了一种新类型的量子自旋霍尔效应.这量子自旋霍尔效应与自旋轨道耦合无关,体系也不具有时间反演不变性;但是有CT不变（C为电子-空穴变换、T为时间反演变换）.由于量子自旋霍尔效应,体系的纵向电阻和自旋霍尔阻出现量子化平台.特别是,自旋霍尔阻的量子化平台有很强的抗杂质干扰能力.     

手征和运动介质界面异常光自旋霍尔效应

文章讨论了偏振高斯光束在空气-手征介质界面的反射和折射问题,发现了反射和折射光束的异常自旋霍尔效应.在某些特定的角度下,反射高斯光束重心的移动可以达到几十个波长的量级,通过调节手征参数,甚至会出现折射光重心移动方向由正到负的转变.文章还讨论了任意偏振高斯光束在空气-运动介质界面的反射和透射问题,当介质垂直于入射平面运动时,反射和透射光束的横向移动可以达到几个波长的量级,甚至在某些运动速度下可以实现移动方向正负的改变.这些研究对控制光的自旋霍尔效应提供了可能的途径.     

NiFe/Pt薄膜中角度相关的逆自旋霍尔效应

NiFe/Pt双层薄膜样品在铁磁共振时, NiFe磁矩进动所产生的自旋流注入到Pt层中, 由于逆自旋霍尔效应产生直流电压V_ISHE, 此电压会叠加到NiFe薄膜由于自旋整流效应而产生的电压V_SRE 上, 实验测量所得电压为V_ISHE和V_SRE的叠加. 为了区分这两种不同机理对电压的贡献, 本文采取旋转外加静磁场的方法, 通过分析所测电压随磁场角度的变化从而分离出V_ISHE 的大小. 研究结果表明, 相比于单层NiFe(20 nm)薄膜样品, NiFe(20 nm)/Pt(10 nm)双层膜样品中由于NiFe自旋注入到Pt 中导致铁磁共振线宽增加. 与逆自旋霍尔效应产生的电压相比, 自旋整流效应的贡献较小, 但不可忽略. 本文工作有助于认清铁磁/非磁性金属材料中的自旋相关效应, 并提供了一种准确的分析逆自旋霍尔效应的方法.     

单轴晶体光轴任意取向时非寻常光的折射规律

在单轴晶体光轴任意取向的情形下 ,应用惠更斯原理导出了非寻常光折射方向的普遍计算公式 ,并给出了确定非寻常光线折射面和折射角的具体解。结合几种熟知的特殊情形进行了简要讨论 ,揭示了文中所得到的折射规律较之斯涅尔定律更具有普遍性 ,从而为光学系统中各类单轴晶体光学元件的应用提供了一个理论依据     

用布儒斯特角法同时测定单轴晶体的折射率和光轴方向

在理论上分析了光轴任意方向的单轴晶体的折射率．根据布儒斯特角原理,当线偏振光的电场矢量平行于入射面时,通过测出对样品三个表面的布儒斯特角,就能同时确定单轴晶体的折射率和光轴方向．并利用分光计,在光轴不确定的情况下,测定了方解石的两个主折射率和光轴方向．     

Enhancing terahertz photonic spin Hall effect via optical Tamm state and the sensing application

The photonic spin Hall effect (PSHE), characterized by two splitting beams with opposite spins, has great potential applications in nano-photonic devices, optical sensing fields, and precision metrology. We present the significant enhancement of terahertz (THz) PSHE by taking advantage of the optical Tamm state (OTS) in InSb-distributed Bragg reflector (DBR) structure. The spin shift of reflected light can be dynamically tuned by the structural parameters (e.g. the thickness) of the InSb-DBR structure as well as the temperature, and the maximum spin shift for a horizontally polarized incident beam at 1.1 THz can reach up to 11.15 mm. Moreover, we propose a THz gas sensing device based on the enhanced PSHE via the strong excitation of OTS for the InSb-DBR structure with a superior intensity sensitivity of 5.873×10⁴ mm/RIU and good stability. This sensor exhibits two orders of magnitude improvement compared with the similar PSHE sensor based on InSb-supported THz long-range surface plasmon resonance. These findings may provide an alternative way for the enhanced PSHE and offer the opportunity for developing new optical sensing devices.     

Quantum spin Hall effect in a square-lattice model under a uniform magnetic field

We study a toy square-lattice model under a uniform magnetic field. Using the Landauer-Bttiker formula, we calculate the transport properties of the system on a two-terminal, a four-terminal and a six-terminal device. We find that the quantum spin Hall (QSH) effect appears in energy ranges where the spin-up and spin-down subsystems have different filling factors. We also study the robustness of the resulting QSH effect and find that it is robust when the Fermi levels of both spin subsystems are far away from the energy plateaus but is fragile when the Fermi level of any spin subsystem is near the energy plateaus. These results provide an example of the QSH effect with a physical origin other than time-reversal (TR) preserving spin-orbit coupling (SOC).     

光在单轴晶体内表面上的反射

基于电磁波边界条件，从几何光学的角度，对单轴日 体内表面上光的反射规律进行了分析和讨论，给出了寻常光和非常光波法线和光线反射的公式，同时指出了上述结果与由费马原理导出的结果是一致的。     

The spin Hall effect in single-crystalline gold thin films

The spin Hall effect has been investigated in 10-nm-thick epitaxial Au(001) single crystal films via H-pattern devices,whose minimum characteristic dimension is about 40 nm. By improving the film quality and optimizing the in-plane geometry parameters of the devices, we explicitly extract the spin Hall effect contribution from the ballistic and bypass contribution which were previously reported to be dominating the non-local voltage. Furthermore, we calculate a lower limit of the spin Hall angle of 0.08 at room temperature. Our results indicate that the giant spin Hall effect in Au thin films is dominated not by the interior defects scattering, but by the surface scattering. Besides, our results also provide an additional experimental method to determine the magnitude of spin Hall angle unambiguously.