Ba10(PO4)4(SiO4)2∶Eu2+荧光体的光谱特性

采用高温固相法合成了荧光体Ba₁₀（PO₄）₄（SiO₄）₂：Ce³⁺和Ba₁₀（PO₄）₄（SiO₄）₂：Eu²⁺,研究了两种荧光体的光谱特性。结果表明,两者都呈现较强的宽带激发特征。根据同种基质中Eu²⁺和Ce³⁺两种离子光谱特征的相关性,通过测得的Ba₁₀（PO₄）₂（SiO₄）₂基质中Ce³⁺的光谱数据估算了Ba₁₀（PO₄）₂（SiO₄）₂：Eu²⁺中Eu²⁺的斯托克斯位移（ΔS）和激发能量,估算结果与Ba₁₀（PO₄）₂（SiO₄）₂：Eu²⁺样品的光谱分析结果十分吻合。Ba₁₀（PO₄）₂（SiO₄）₂：Eu²⁺可以同时被紫光和蓝光激发,发出偏白的绿光,可用作白光LED的荧光粉。     

Design of Lead-Free Films with High Energy Storage Performance via Inserting a Single Perovskite into Bi_4Ti_3O_(12)

We report a distinctive way for designing lead-free films with high energy storage performance.By inserting different single perovskite cells into Bi₄ Ti₃ O₁₂,P-E hysteresis loops present larger maximum polarization,higher breakdown strength and smaller slim-shaped area.We prepared 0.15 Bi₇ Fe₃ Ti₃ O₂₁-0.5 Bi₄ Sr₃ Ti₆ O₂₁-0.35 Bi₄ Ba₃ Ti₆ O     

两种以Znq2为基体的新型电致发光材料的合成与性能

以8-羟基喹啉为配体的金属配合物是一种性能优良的有机电致发光材料,其中有关8-羟基喹啉铝(Alq₃)研究已有大量报道,8-羟基喹啉锌(Znq₂)研究还有待发展。介绍了两种以Znq₂为基体的新型有机电致发光材料Znq₂(H₂O)₂和(Znq₂)₄的合成方法。用IR、XRD、TG、DTA和荧光测试方法进行表征与分析表明:Znq₂(H₂O)₂和(Znq₂)₄的玻璃化温度(T_g)分别为104.2℃和204.9℃;在161℃下Znq₂(H₂O)₂脱去水分子成为Znq₂,在361℃高温下四聚体(Znq₂)₄裂解为单体Znq₂;Znq₂(H₂O)₂和(Znq₂)₄具有很好的发光性能,在光致发光谱中λ_max分别是505,550nm。     

碳氮缺陷修饰g-C3N4/WS2异质结光催化性质的第一性原理研究

本文采用第一性原理方法计算了四种不同g-C₃N₄/WS₂异质结的超晶胞结构、功函数、能带结构、态密度和吸收光谱,研究了不同缺陷对g-C₃N₄/WS₂异质结的电子结构和光催化性能的影响.发现g-C₃N₄/WS₂、g-C₃N₄/WS₂-V_1N、g-C₃N₄/WS₂-V_1N1C、g-C₃N₄/WS₂-V_1N2C均能形成稳定的异质结,g-C₃N₄/WS₂-V_1N1C和g-C₃N₄/WS₂-...     

模糊聚类正交方法若干结果

本文提出一个新的模糊聚类方法:正交法,这种方法基于如下正交聚类原则:记截矩阵R_λ=(α₁,α₂,…,α_n),其中列向量α_j=(α_1j,α_2j,…,α_nj)^T,所谓向量α_i,α_j正交,指内积(α_i,α_j)=0。     

含新结构单元[Co3(SS)3(PR3)3]的钴化合物的磁性研究

通过含新结构单元钴化合物:Co₃(bdt)₃(PBu₃)₃(Ⅰ),Co₃(tdt)₃(PBu₃)₃(Ⅱ),[Co₃(bdt)₃(PPh₃)₃][CoBr₃(dmf)](Ⅲ)和[Co₃(edt)₃(PEtB)₃]₂[Co₂Cl₄(Et₂SO₂)₂](Ⅳ)(bdt=1,2-S₂C₆H₄^2-,tdt=4-Me-1,2-S₂C₆H₃^2-,edt=SCH₂CH₂S^2-)的磁极矩和¹H NMR等研究表明:它们均具顺磁性,钴原子之间存在着反铁磁偶合作用,同时还讨论了它们的磁学性质和分子结构之间关系。     

富勒烯衍生物C60（CF3）n（n=2，4，6，10）几何结构和电子性质变化规律的密度泛函研究

采用密度泛函理论中的广义梯度近似对C₆₀（CF₃）_n （n=2,4,6,10）几何结构和电子性质的变化规律进行了计算研究.发现在C₆₀（CF₃）₄可能稳定存在的三种同分异构体中,具有p p p加成方式的衍生物热力学性质最为稳定;在C₆₀（CF₃）₆可能稳定存在的三种同分异构体中,具有p p p m p加成方式的衍生物热力学性质最为稳定.对C₆₀（CF₃）₂,C₆₀（CF₃）₄,C₆₀（CF₃）₆和C₆₀（CF₃）₁₀四种加成衍生物的几何结构分析可知：随着CF₃加成个数的增加,C₆₀中的C—C平均键长逐渐变大,笼子与CF₃之间连接键C_C60—C_CF3逐渐变大.对它们的电子结构分析可知,随着CF₃加成数目的增多,反应热几乎是线性增加.而C₆₀（CF₃）_n（n=2,4,6,10）分子的平均反应热在n=6处为极大值,说明C₆₀（CF₃）₆应该是最容易得到的加成产物.由Mulliken电荷可知,加成的CF₃个数越多,CF₃与笼子的相互作用也就越强,每个CF₃转移到笼子上电荷数也就越多.C₆₀（CF₃）_n的自旋聚居数分布表明它们均为闭壳层结构.最后,从CF₃对分子的前线轨道贡献可知,四种分子的得电子情况和失电子情况均发生在碳笼本身,并不随着CF₃个数的增加而发生明显的改变. 关键词： 60（CF₃）_n （n=2')" href="#">C₆₀（CF₃）_n （n=2 10） 几何结构和电子性质 密度泛函     

钚氧化物中氢行为的第一性原理研究

通过第一性原理计算和原子级热力学方法,系统研究H、H₂在PuO₂和α-Pu₂O₃中的吸附、扩散和溶解行为.研究发现：氢的上述行为均是吸热过程,但在α-Pu₂O₃与PuO₂中有显著不同：在α-Pu₂O₃中H可自发聚合成H₂,但在PuO₂中H难再聚合;在α-Pu₂O₃中H、H₂均能扩散,通常H会聚合成H₂再扩散,在PuO₂中H₂解离后才能扩散,且PuO₂中H沿高势能面的扩散比α-Pu₂O₃中H₂扩散更容易;在氢压、温度驱动下,氢在α-Pu₂O₃中存在H₂溶解到H+H₂混合溶解机制的转变,平衡气压P_H2远小于H在PuO₂中溶解的情况.基于此,给出PuO₂和α-Pu₂O₃中氢行为的微观图像和PuO₂的阻氢微观机制：PuO₂表面限制H₂解离、渗透,PuO₂块体限制H的溶解,但不阻止H扩散.结合钚氧化层表面氢行为研究获得了钚氢化孕育期的微观机制,为孕育期全过程理论建模提供依据.     

PrxLa1-xP5O14的发光理论和浓度效应

本文利用Judd-Ofelt理论求得PrP₅O₁₄晶体的振子强度参数Q₂,比较了计算和实验的振子强度,计算了³P₁,³P₀,¹D₂和¹G₄能级的电偶极和磁偶极辐射跃迁几率及¹D₂→¹G₄和³H₄→³F₄能级对间的多极矩耦合的无辐射迁移几率。讨论了¹D₂能级发射强度的浓度效应。并且,给出¹D₂能级发射强度的表达式和强度随着浓度和单位时间内激发光引起的³H₄到¹D₂跃迁的诱导跃迁几率的变化图。 关键词：     

金属-半导体超晶格中界面电荷的生成机理

采用LMTO ASA能带计算方法，研究(Si₂)₃ (2Al) ₆ (001),(Ge₂)₃ (2Al) ₆ (001),(Ge₂)₃ (2Au) ₆ (001)和(Ge₂)₃ (2Ag) ₆ (001)超晶格中半导体界面电荷Qss的生成机理，结 关键词： Schottky势垒 界面电荷     

飞机跑道胶痕的自动识别系统设计与实现

为了减轻机场跑道除胶工作人员的劳动强度,提高除胶工作效率,文章提出了一种基于机器视觉的胶痕自动查找和识别方法,设计了基于ARM单片机控制的图像无线采集和基于PC机控制的图像接收、图像预处理和图像识别系统。文章通过分析预处理后的数据特点,确定了基于细胞神经网络算法的胶痕识别算法,然后在MATLAB仿真环境下确定了该算法的最优模型和参数,最后在Visual C++ 6.0环境下完成了该算法的程序编译,调试并完成了对胶痕的自动识别过程。理论仿真和程序测试的结果证明了文章提出的方法在胶痕自动识别系统中的可行性,也为机场特种设备的无人化和智能化提供了参考。     

Valence states of copper atoms in cuprates determined from the change in the electron-capture constant of 64Cu

The change in the ⁶⁴Cu electron-capture constant for the compounds Cu₂O, YBa₂Cu₃O₇, YBa₂Cu₃O₆, Nd₂CuO₄, Nd_1.8Ce_0.2CuO₄, La₂CuO₄, La_1.7Sr_0.3CuO₄, Tl₂Ba₂CaCu₂O₈, and Bi₂Sr₂CaCu₂O₈ has been measured. It is concluded that the copper in YBa₂Cu₃O₇, Nd₂CuO₄, La₂CuO₄, La_1.7Sr_0.3CuO₄, Tl₂Ba₂CaCu₂O₈, and Bi₂Sr₂CaCu₂O₈ is exclusively divalent, whereas in Cu₂O, YBa₂Cu₃O₆, and Nd_1.8Ce_0.2CuO₄ univalent copper is present. Fiz. Tverd. Tela (St. Petersburg) 39, 1793–1794 (October 1998)     

SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合铁电薄膜. 研究了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi₄Ti< 关键词： 2Ta₂O₉')" href="#">SrBi₂Ta₂O₉ 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 复合铁电薄膜 溶胶凝胶工艺     

一种车辆状态通用自动监测装置设计与实现

当前装备车辆底盘数据大都通过仪表盘进行显示,而没有对数据进行采集和存储,造成对车辆的基本状态无法进行有效的评估和故障趋势分析;针对这种情况,设计一种对车辆底盘运行参数进行采集和存储的装置,通过一个通用的多PIN接口与车辆仪表盘信号线相连,采用高速AD芯片、高速主控芯片和RS485通讯接口实现对仪表盘接线输出信号的采集、计算与数据的传输存储;应用表明,此装置解决了多种车辆底盘参数的采集记录问题,具有广泛的推广应用价值。     

Structure of Artificial Grain Boundaries in Sapphire Bicrystals with Intermediate Layers

The structure of the artificial grain boundaries in Al₂O₃ bicrystals withY₃Al₅O₁₂ and Y-stabilizedZrO₂ (Y-ZrO₂) intermediate layers was studiedwith high resolution electron microscopy, electron diffraction and energydispersive X-ray analysis. TheY₃Al₅O₁₂ intermediate layer wasfound to be polycrystalline with three different orientation relationshipsbetween the ₂O₃ and theY₃Al₅O₁₂. The structure of theY₃Al₅O₁₂/₂O₃ interfaces is described.Also₂O₃ bicrystals with an Y-ZrO₂/₂O₃/Y-ZrO₂/₂O₃/Y-ZrO₂intermediate layer, prepared at two different temperatures, werestudied.Recry stallization of the intermediate layers occurred during thesolid phase intergrowth of the ₂O₃ bicrystalsparts and only an Y-ZrO₂ layer was found as intermediatelayer. The misorientation between the consecutive Y-ZrO₂grains was less than 1.5°. Misfit dislocations and atomic height stepsdecorate the Y-ZrO₂/₂O₃interface.     

Correlation of fluctuation field and temperature coefficient of coercivity in a CoCrPtB thin film

The effect of the ratio of fluctuation field (H_f) to coercivity (H_c) on the temperature coefficient of coercivity [α(H_c)] was investigated for Co₅₅Cr_15.5Pt₂₈B_1.5/Co₆₃Cr₃₇/Cr, Co₆₉Cr₁₉Pt₉Ta₃/Cr, and Co₈₆Cr₁₀Ta₄/Cr thin films (longitudinal recording media) with very small average grain volume (V_phy). α(H_c) increases markedly with increase in temperature between near 250 and 350 K for Co₅₅Cr_15.5Pt₂₈B_1.5/Co₆₃Cr₃₇/Cr thin films. α(H_c) is approximately proportional to the ratio H_f/H_c for all thin films, as in the case of advanced data backup tapes prepared from ultrafine particles. α(H_c) and the ratio H_f/H_c increase as V_phy decreases. Smaller H_f/H_c values are necessary for small α(H_c) values, which is very important for the thermal stability of high-density recording media with very small V_phy.     

故障注入技术在机载计算机模拟量采集中的应用

近年来航空武器的功能性能快速提高,机载计算机处理能力也越来越强。接口模块作为处理多种接口信号的重要部件,在机载计算机中起着至关重要的作用。文中结合故障注入技术,在以往常用模拟量采集电路基础上,设计了模拟量激励产生电路,实现模拟量采集电路的故障注入,结合测试软件完成模拟量采集电路的检测,达到提高机载计算机的测试性的目标。     

Catalytic effect of water,water dimer,water trimer,HCOOH, H2SO4, CH3CH2COOH and HN(NO2)2 on the isomerisation of HN(NO2)2 to O2NNN(O)OH: a mechanism study

In this article, the isomerisation mechanisms of HN(NO₂)₂ to O₂NNN(O)OH without and with catalyst X (X = H₂O, (H₂O)₂, (H₂O)₃, HCOOH, H₂SO₄, CH₃CH₂COOH and HN(NO₂)₂) have been investigated theoretically at the CBS-QB3 level of theory. Our results show that the catalyst X (X = H₂O, (H₂O)₂, (H₂O)₃, HCOOH, H₂SO₄ and CH₃CH₂COOH) shows different positive catalytic effects on reducing the apparent activation energy of the isomerisation reaction processes. Such different catalytic effects are mainly related to the number of hydrogen bonds and the size of the ring structure in X (X = H₂O, (H₂O)₂ and (H₂O)₃)-assisted transition states, as well as different values of pK_a for H₂SO₄, HCOOH and CH₃CH₂COOH. Very interesting is also the fact that H₂SO₄-assisted reaction is the most favourable for the hydrogen transfer from HN(NO₂)₂ to O₂NNN(O)OH, due to the smallest pK_a (?3.0) value of H₂SO₄ than H₂O, HCOOH, H₂SO₄ and CH₃CH₂COOH, and also because of the largest ∠X???H???Y (the angle between the hydrogen bond donor and acceptor) involved in H₂SO₄-assisted transition state. Compared to the self-catalysis of the isomerisation mechanisms of HN(NO₂)₂ to O₂NNN(O)OH, the apparent activation energy of H₂SO₄-assisted channel also reduces by 9.6 kcal?mol^?1, indicating that H₂SO₄ can affect the isomerisation of HN(NO₂)₂ to O₂NNN(O)OH, most obvious among all the catalysts H₂O, (H₂O)₂, (H₂O)₃, HCOOH, H₂SO₄, CH₃CH₂COOH and HN(NO₂)₂.     

Physical and electrical properties of band-engineered SiO2/(TiO2) x (SiO2)1−x stacks for nonvolatile memory applications

In our study, the physical properties of (TiO₂) _x (SiO₂)_1?x , including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO₂/(TiO₂) _x (SiO₂)_1?x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO₂) _x (SiO₂)_1?x can be controlled by adjustment in the composition of the (TiO₂) _x (SiO₂)_1?x films. Ti-silicate film with TiO₂:SiO₂ cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950 °C. The tunneling current of the band-engineered SiO₂/(TiO₂) _x (SiO₂)_1?x stacked tunnel barrier was larger than that of a single SiO₂ barrier under a higher external bias, while the tunneling current of a SiO₂/(TiO₂) _x (SiO₂)_1?x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO₂/(TiO₂) _x (SiO₂)_1?x is slightly larger than that for single SiO₂.     

Electrical and magnetic properties of [(CoFeZr)x(Al2O3)1 ? x/(α-SiH)]n multilayer structures

The concentration dependences of the electrical resistivity and complex permeability of [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n multilayer structures and (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites have been studied. It has been established that introduction of a semiconductor interlayer into the (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites substantially decreases the electrical resistivity of [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n multilayer structures. The concentration dependences of the real and imaginary parts of the complex permeability of the [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n nanomultilayer structures substantially differ from those of the (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites. The real part of the complex permeability of the [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n nanomultilayer structures follows the curve with a minimum near the percolation threshold of the composite, and the imaginary part smoothly decreases as the ferromagnetic phase concentration increases. The results obtained are explained by the increase in the bifurcation temperature due to the conduction electrons of the semiconductor interlayer, which favor magnetic ordering of ferromagnetic grains.