Synthesis and characterization of the Aurivillius phases Bi2 − xPbxSr1 − xNdxNb2O9

The n = 2 Aurivillius phase Bi_{2 − x}Pb_xSr_{1 − x}Nd₂O₉ was successfully synthesized as a ceramic material over the whole range of simultaneous, charge compensated substitution x = 0–1.0. Structural investigations were performed by Rietveld refinement applying different space groups Fmmm and A2₁am, and additionally by X-ray absorption spectroscopy (EXAFS) on the Nd L_III-edge, confirming the accommodation of Nd on the atomic sites of Sr, which implies the substitution of Bi³⁺ by the isoelectronic Pb²⁺. The ferroelectric transition temperature T_c = 270 °C of the substituted powders with x = 0.4 and 1.0 is distinctly reduced compared to the unsubstituted sample with T_c = 450 °C. In temperature resolved powder X-ray diffraction patterns no structural phase transition could be detected.     

Phonon Raman scattering in Nd1+xBa2−xCu3O7−δ and Pr1+xBa2−xCu3O7−δ single crystals

The polarized Raman spectra of Nd_1+xBa_2−xCu₃O_7−δ (−0.023≤x≤0.107) and Pr_1+xBa_2−xCu₃O_7−δ (0.01≤x≤0.15) single crystals have been investigated. It was found that the Cu(2) A_g mode softens by 6 cm⁻¹ in Nd 1:2:3 and 4 cm⁻¹ in Pr 1:2:3 as x increases. These frequency shifts cannot be explained by the change in the relevant bond lengths due to Nd(Pr)-substitution for Ba. The variations with x of the two low frequency modes may be affected by change of their hybridization and/or change of their force constants. The linewidths of Ba mode in Pr 1:2:3 are broader than those in Y 1:2:3. This result suggests that the Pr substitution on Ba sites occurred even in a very small value of x. In x(yy) geometry the relative intensity of the Ba and O(4) modes in Nd 1:2:3 is greater than those in Pr 1:2:3. The difference between Nd 1:2:3 and Pr 1:2:3 in the relative intensity of the Ba and O(4) modes may be produced by the chains.     

Crystal structure, electrical and magnetic properties of La1 − xSrxCoO3 − y

The crystal structure and properties of La_{1 − x}Sr_xCoO_{3 − y} with strontium contents ranging from x = 0.1 to x = 0.7 have been studied. The lattice parameters were measured as a function of temperature (4.2–400 K) and the crystal structure was found to change from rhombohedral (at low temperatures and values of x) to cubic. While LaCoO₃ is paramagnetic the oxides in the composition range 0.2 < x < 0.6 are soft ferromagnets. The strontium additions are compensated by the formation of Co⁴⁺ (cobalt ions with one positive effective charge, Co_Co^.) and oxygen vacancies (V_o^..). From the results it is concluded that the relative importance of oxygen vacancies increases with increasing temperature and decreasing oxygen activity. As a result the concentration of electronic charge carriers — and the resultant electrical conductivity — decrease with increasing temperature. The defect structure is discussed and it is concluded that defect associations — probably between oxygen vacancies and strontium ions — and formation of microdomains of perovskite-related phases are important aspects of the overall structure of these perovskite phases.     

Field induced flux pinning in Nd1+xBa2−xCu3O7−δ single crystal

The flux pinning behavior of a Nd_1+xBa_2−xCu₃O_7−δ (Nd123) single crystal, which exhibited a peak effect, has been studied by monitoring the time decay of the magnetic moment. The apparent pinning energy (U₀^*) was deduced from flux creep data on the basis of the Anderson-Kim model. The magnetic field dependence of U₀^* showed maxima at peak fields which depended on the temperatures, in a similar manner to those of critical current densities. In addition, the temperature dependence of U₀^* showed several features. To explain the increase in U₀^* with the field as well as its temperature and field dependence, we made a numerical calculation by introducing an additional pinning energy which increased with increasing field. The results are in good agreement with the experimental data, especially at temperatures above 60 K, where the contribution of field induced pinning centers is believed to be dominant.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

Spectroscopic study of BixEu1−xVO4 and BiyGd1−yVO4 mixed oxides

The mixed oxides Bi_xEu_1−xVO₄ and Bi_yGd_1−yVO₄ crystallize in a zircon-type structure, for 0 <x < 0.6 and 0 < y < 0.64, and in a fergusonite-type structure, for 0.94 < x < 1 and 0.93 < y < 1. A process of competition between the dominant and the constrained effects of the lone-pair 6s² of Bi³⁺ is discussed. The diffuse reflectance spectroscopic studies of these mixed oxides are presented. The observed broad bands are attributed to charge transfer processes and the sharp peaks in the Bi_xEu_1−xVO₄ spectra are ascribed to intra-configurational 4f – 4ftransitions of the Eu³⁺ ion. The broad absorption shift in BiLnVO₄ (Ln : Eu and Gd) compounds to the longer wavelengths range, when Bi is introduced in the LnVO₄ lattice, is ascribed to charge transfer processes in a Bi-VO₄ center and are interpreted assuming a Jahn-Teller effect in the excited state of Bi³⁺. The concept of an internal pressure of Bi³⁺ ions is also used to explain the broad A-band shifts.     

The T-contribution to the electrical resistivity at low temperatures in NiAs-type Ni1−xS1−ySey

The y(1−y)-like maxima in Ni_0.98S_1−ySe_y are found beyond y_c in the y-dependences of the coefficient of the T² contribution to the resistivity and of the residual resistivity. Here, the critical concentration of the antiferromagnetic and less-conductive phase is determined to be y_c = 0.095.     

Short-range order and F ion diffusion inside the Pb1 − xAlxF2 + x solid solution Part I: F-NMR investigation

A ¹⁹F-NMR investigation of the Pb_{1 − x}Al_xF_{2 + x} (0 ≤ x ≤ 0.12) solid solution and of the ordered Pb₉Al₂F₂₄ phase is undertaken as a function of temperature. Several F⁻ ion groups become progressively mobile at the NMR time scale at increasing temperature, the first, (F_i)_pb and (F_n)_pb, are located in the surroundings of Pb²⁺ cations, the second ones, (F_rd)_AI and (F_ra)_Al, in that of Al³⁺ cations. Four types of fluoride ions are distinguished in the ¹⁹F-NMR spectra of rigid lattice at low temperature (T = 175 K) and the distribution of fluoride ions among the four sites is determined by deconvolution of the spectra registered. The sites occupied by the (F_n)_pb anions are identified with the normal anionic sites of the fluorite network, the others with different interstitial sites.     

Effect of Pr and Ca substitution on superconductivity in Y(1−x−yPrxCay)Ba2Cu3O7−δ

Pr substituted at constant Ca concentration for Y in (Y_1−x−yPr_xCa_y)Ba₂Cu₃O_7−δ superconductors have been prepared under identical conditions and the temperature dependence of the electrical resistivity of these samples are measured. The resistively determined values of T_c decrease linearly with increasing x (0 ≤ x ≤ 0.2) for constant y = 0.10 and 0.15 which provides convincing evidence that the suppression of superconductivity by Pr is mainly due to magnetic pair breaking. The suppression of superconductivity can also be correlated to the observed changes in oxygen content determined by iodometric analysis and to the average Cu-valences. However, it is found that the observed suppression of T_c cannot be compensated by appropriate hole doping with Ca.     

Perovskite-like system (Sr,La)(Fe,Ga)O3−δ: structure and ionic transport under oxidizing conditions

The maximum solid solubility of gallium in the perovskite-type La_1−xSr_xFe_1−yGa_yO_3−δ (x=0.40–0.80; y=0–0.60) was found to vary in the approximate range y=0.25–0.45, decreasing when x increases. Crystal lattice of the perovskite phases, formed in atmospheric air, was studied by X-ray diffraction (XRD) and neutron diffraction and identified as cubic. Doping with Ga results in increasing unit cell volume, while the thermal expansion and total conductivity of (La,Sr)(Fe,Ga)O_3−δ in air decrease with gallium additions. The average thermal expansion coefficients (TECs) are in the range (11.7–16.0)×10⁻⁶ K⁻¹ at 300–800 K and (19.3–26.7)×10⁻⁶ K⁻¹ at 800–1100 K. At oxygen partial pressures close to atmospheric air, the oxygen permeation fluxes through La_1−xSr_xFe_1−yGa_yO_3−δ (x=0.7–0.8; y=0.2–0.4) membranes are determined by the bulk ambipolar conductivity; the limiting effect of the oxygen surface exchange was found negligible. Decreasing strontium and gallium concentrations leads to a greater role of the exchange processes. As for many other perovskite systems, the oxygen ionic conductivity of La_1−xSr_xFe_1−yGa_yO_3−δ increases with strontium content up to x=0.70 and decreases on further doping, probably due to association of oxygen vacancies. Incorporation of moderate amounts of gallium into the B sublattice results in increasing structural disorder, higher ionic conductivity at temperatures below 1170 K, and lower activation energy for the ionic transport.     

Superconductivity due to charge transfer to the CuO2 sheet from the (Tl,Pb) O layer in Tl0.5Pb0.5Sr2−xNdxCuO5−δ

The superconductivity of Tl_0.5Pb_0.5Sr_2−xNd_xCuO_5−δ was observed for x ≥ 0.3, although the calculated Cu valence assuming Tl³⁺ and Pb⁴⁺ is slightly above or below 2.0. The binding energy of the Tl and Pb 4f core levels measured by XPS shifted to higher energy than those of Tl³⁺ and Pb⁴⁺ in the reference materials, showing that the Tl and Pb valences are lower than 3 + and 4 +, respectively. These observations strongly suggest that holes in the CuO₂ sheet are created by charge transfer from the (Tl,Pb)O layer, similar to the double-layered Tl---Ba cuprates.

In contrast, the temperature variation of electrical conductivity of Tl_0.5Pb_0.5Sr₂CuO_5−δ changed from metallic to semiconducting with increasing oxygen deficiency, δ, and no superconductivity was observed through any control of δ. Although XPS measurement also suggested that Tl and Pb valences lowered with increasing oxygen deficiency, δ, the reason why the system did not show superconductivity can be understood by the depletion of oxygen from the CuO₂ plane during deoxygenation.     

Luminescence from Si-Si1−xGex/Si1−yCy-Si structures

Near band edge photoluminescence has been obtained from Si_1−yC_y quantum well (QW) and neighboring Si_1−xGe_x/Si_1−yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si_1−xGe_x layer has been observed from neighboring Si_1−xGe_x and Si_1−yC_y DQW structures.     

Oxygen nonstoichiometry and phase transitions of the neodymium-rich Nd1+xBa2−xCu3Oz solid solution

On the basis of chemical, thermal analysis and Cu K-edge X-ray absorption measurements, oxygen content in the Nd_1+xBa_2−xCu₃O_z solid solution was determined between 1000°C in air and 400°C in oxygen for x=0.05–0.9 compositions. It has been observed that the oxygen nonstoichiometry Δz of the Nd_1+xBa_2−xCu₃O_7+x/2−Δz solid solution decreases 2–2.5 times for a large substitution (Δz≈0.3–0.33 for x=0.9), despite of the acclaimed higher total oxygen content. The difference in nonstoichiometry is explained by a higher average value of the copper oxidation state (ACV), which is vital for the solid solution with large x even at elevated temperatures (ACV≈2–2.05 for x>0.3 at 1000°C, PO₂=0.21 atm). On the contrary, the ACV after complete oxygenation is almost constant (about 2.25–2.3) for the whole series. The x-dependence of the oxygen content is not monotonous and structural phase transitions can be observed at x=0.3 and x=0.6, as confirmed by the X-ray diffraction and the Raman scattering spectroscopy. The first well-known transition is connected with the oxygen disorder due to the Nd substitution for Ba at random Ba-sites. In the present work, it is proved by the apical oxygen mode broadening in Raman spectra. Ordering of the Nd and Ba atoms with a subsequent orthorhombic distortion of the lattice may occur even at 1000°C in air due to the second transformation at x≈0.6. The invariable orthorhombicity of the Nd-rich solid solution with x>0.6 is not caused by the oxygen absorption as in the x=0.05 case. Existence of high- and low-temperature orthorhombic modifications of this solid solution has been observed for the first time. Finally, a tentative 3D (z–x–T) diagram is suggested for the Nd_1+xBa_2−xCu₃O_z solid solution up to 1000°C in air, including the new x=0.6–0.9 region.     

Trapping mechanism of superconductivity suppression induced by Pr substitution in the Ho1−xPrxBa2Cu3O7−δ system

Pr concentration dependence of the superconducting transition temperature T_c in the Ho_1−xPr_xBa₂Cu₃O_7−δ system is determined from measurements of DC electrical resistance. This dependence coincides with that for the parallely studied Y_1−xPr_xBa₂Cu₃O_7−δ reference system. Both systems have the same value of the critical concentration x_c=0.58, in accordance with nearly equal ionic radii of Ho³⁺ and Y³⁺ ions. It has been shown that the T_c(x) curve can be described with a single mechanism based on a decreasing number of sheet holes trapped by Pr^IV-ions, if one takes also into account that the number of these ions changes with x.     

Coercivity mechanism in nanophase (Nd–Pr)–Fe–B melt spun alloys

The nucleation mechanism to predict coercivity values in melt-spun exchange-coupled (Nd_1−xPr_x)_yFe_94−yB₆ alloys for various Nd:Pr ratios x, and Fe:RE ratios y, was tested using the dependence of the anisotropy constant K₁ on Pr content x for the minimum nucleation field H_N^min in the modified Brown's equation. Very good agreement was found between experimental data and theoretical values, confirming the predominance of the nucleation of reverse domains over the wall pinning process in the coercivity mechanism of melt spun REFeB alloys.     

Effect of cobalt substitution on cationic distribution in LiNi1 − y CoyO2 electrode materials

A crystal chemistry study of LiNi_{1 − y}Co_yO₂ phases, used as positive electrode in lithium batteries, is presented. These materials crystallize in the rhombohedral system (space group: R m) with a layered structure. Rietveld profile refinement of the X-ray data shows that for low substitution amounts ( ≤ 0.20) extra-nickel ions are always present leading to the Li_{1 − z}Ni_{1 + z − t}CotO₂ (t = y(1 + z)) formula (z * > 0), while for y ≥ 0.30, a pure 2D structure is obtained (z = 0). The stabilization of the 2D character of the structure by cobalt substitution in lithium nickelate leads to the improvement of the electrochemical properties.     

Field-induced pinning effect of Nd(Ba1−xNdx)2Cu3O7−δ single crystals grown by the traveling-solvent floating-zone method

We have studied the superconducting properties of Nd(Ba_1−xNd_x)₂Cu₃O_7−δ (Nd123, x ≈ 0.1) single crystals grown by the traveling-solvent floating-zone method under 0.1% O₂ in Ar atmosphere. The enhancement of the magnetization with increasing field is observed in the hysteresis (M-H) loop in fields both parallel and perpendicular to the c-axis of the Nd123 single crystals as well as in the bulk crystals prepared by the oxygen-controlled-melt-growth (OCMG) method. The composition variation of Ba/Nd is observed in the matrix of Nd123 crystals by an analytical TEM equipped with a cold field-emission gun. It turns out that the enhancement is due to the field-induced pinning effect ascribed to the weak superconducting Nd---Ba substitution regions in the Nd123 matrix.     

Effect of oxygen partial pressure on the lower solubility limit of Nd1+xBa2−xCu3O7

The lower solubility limits of Nd_1+xBa_2−xCu₃O₇ (Nd123ss) in 1 bar, 0.2 bar, 0.01 bar, and 0.001 bar oxygen partial pressure (P_O2) were studed by differential thermal analysis (DTA) and X-ray diffraction (XRD). Large relative changes in stability with decreasing P_O2 explain why sharp superconducting transitions can be achieved in P_O2 ≤ 0.01 bar while processing in 0.2 to 1 bar P_O2 tends to produce broad transitions. While the lower solubility limits in 0.01 bar and 0.001 bar P_O2 remain at x = 0.00, the solubility limits in 0.2 bar and 1 bar P_O2 show a narrowing with decreasing temperature. Because of the narrowing of the solubility range in 1 bar P_O2, oxygen annealing of Nd123 initially processed in low P_O2 will result in precipitation of second phases which act as flux pinning centers.     

Preparation, characterization and oxide ion conductivity in U-substituted Bi4V2O11

A Bi₂V_{1 − x − y}U_xBi_yO_{5.5 + 0.5x − y} solid solution derived from Bi₄V₂O₁₁ has been prepared and characterized with x up to 0.125 for y = 0. Partial substitution of U⁶⁺ for V⁵⁺ in Bi₄V₂O₁₁ leads to the stabilization at room temperature of the high-oxide ion conducting γ-phase, in contrast with other M⁶⁺ dopants which stabilize the β-phase. The lower conductivity in U substituted system compared with BICUVOX.10 is attributed to its higher activation energy. Conductivity values and activation energies of the U substituted phases compare well with Bi₂UO₆.     

Nax/2Bi1−x/2MoxV1−xO4 and Bi1−x/3MoxV1−xO4 New Scheelite-related phases

New Scheelite-related solid solutions of the compositions Na_x/2Bi_1−x/2Mo_xV_1−xO₄ (0≤x≤1) and Bi_1−x/3 Mo_xV_1−xO₄(0≤x≤0.2) have been synthesised by the substitution of Na and Mo at the A and B sites respectively of the ABO₄ type ferroelastic BiVO₄. The phases were characterised using chemical analysis, powder X-ray diffraction, scanning electron microscopy, EDAX, and Raman spectroscopy. While almost a continuous solid solution is obtained for the series Na_x/2Bi_1−x/2Mo_xV_1−xO₄, the absence of Na at the A-site results only in a narrow stability region for the other series, Bi_1−x/3 Mo_xV_1−xO₄ where 0≤x≤0.2. Raman spectra of selected samples at room temperature also suggest that vanadium and molybdenum atoms are disordered at the tetrahedral sites.