Auger electron spectroscopy - a local probe for solid surfaces

The Auger electron transition in solids is discussed under the aspect of a local excitation due to the strongly localized primary hole in an inner atomic core level. In first approximation the solid is represented by a cluster model, consisting of the excited atom and its neighbors. Using this simple model it is possible to describe the Auger electron energies, intensities and line shapes of transitions in solids in a satisfactory way. Only for the angular dependent Auger emission, characteristic long-range crystalline order has to be taken into account. It is the aim of this introductory review to point out that Auger spectra bear more information about the solid surface and particularly on its chemical bonds as has yet been exploited by surface spectroscopists.     

Development and applications of polarized electron spectroscopy to solids and surfaces

Recent milestones in the development of spin-polarized electron spectroscopy, along with trends in current applications to magnetic solids and surfaces, are reviewed. Emphasis is placed on the work performed in the Jülich-Cologne area since 1978 as it was originally promoted also by Bernd Mühlschlegel.Dedicated to B. Mühlschlegel on the occasion of the 60th birthday     

An ampere-like law for displacement vector field and near-field optical microscopy

We make up a novel and simple theory for near field and near-field optical microscopy (NOM). Our theory is composed of two parts. The first is a formulation to calculate the scattered near field of light by a small dielectric. We state that a wavenumber-vector-independent picture appears in the theory of the near field, and we find that this is expressed by an Ampere-like law for the displacement vector field. The second part is a formulation of field intensity for far field observation and near field observation from a unified point of view. We suggest a theoretical formula for the field intensity corresponding to the NOM image and demonstrate how to understand the relation between the near field and this image.     

Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys

Optical and thermal properties of metal organic chemical vapor deposition (MOCVD) grown BGaAs/GaAs alloys with boron composition of 3% and 8% are investigated by photothermal deflection spectroscopy (PDS). The band gap energy, absorption spectrum and thermal conductivities are evaluated by comparing the experimental and the theoretical PDS signals amplitude and phase. The boron effects in these parameters have been shown. In fact, it was found that gap energy and thermal conductivity of BGaAs/GaAs alloys with 3% of boron are respectivelly 1376 mev and 4.7 W/m K, these values decrease to 1360 mev and 3.5 W/m K for 8% of boron composition.     

A compact ESPI system for displacement measurements of specular reflecting or optical rough surfaces

A stable and compact speckle interferometer for doing out-of-plane displacement measurements on reflective as well as diffusely scattering object surfaces is demonstrated. The set-up is based on a nearly path length compensated interferometer of the Fizeau type and uses diffuse illumination of the object combined with a speckled reference wave. This combination eliminates the need for special optical components, and the interferometer can be built of commonly available components. The diffuse illumination wave is obtained by scattering coherent light from a diffusely scattering surface. The speckled reference wave is established by reflecting a part of the diffuse illumination wave from a glass plate placed in front of the object. Besides relaxing the alignment tolerances of the set-up, the diffuse illumination eliminates the need for any preparation of the surface under test, which turns the system into a candidate for testing micro mechanical systems. When using the interferometer for measurements of the eye, the risk of focusing the laser beam on the retina is decreased due to the diffuse object illumination.     

NMR difference probe: a dual-coil probe for NMR difference spectroscopy

A unique probe designed to acquire nuclear magnetic resonance difference spectra of two samples is presented. The NMR Difference Probe contains two sample coils in a resonant circuit that switches between parallel excitation and serial acquisition to cancel common signals such as solvent peaks and impurities. Two samples containing a common analyte, acetonitrile, were used to demonstrate signal cancellation in a difference spectrum collected with a single pulse experiment. The cancellation was over 96% effective. The approach described has applications in the areas of solvent subtraction and spectral simplification.     

基于扫描探针技术的超分辨光学成像和谱学研究进展

通过对光与物质相互作用产生的各种效应的研究可以获得物质的组分、结构、电学、力学、相互作用等信息,因此光学激发和探测技术成为现代科学研究的重要工具。然而衍射效应将光学探测的最小空间尺度约束在波长量级,这严重限制了光学对微观结构的探测。近年来基于扫描探针显微镜发展而来的近场光学显微镜利用光学天线对光场的局域和增强作用,将光学探测的分辨率推进到10 nm的尺度。文章将介绍目前一种主流的光学超分辨技术——散射式扫描近场光学显微镜及其在材料科学和生命科学方面的前沿研究进展。     

Correlation spectroscopy measurements of particle size using an optical fiber probe

We propose measuring the size of particles suspended in a liquid by light beating spectroscopy of scattered light using an optical fiber probe inserted into a medium and consisting of three multimode optical fibers. One of them is used to transmit light, the other two — to transmit scattered light to a unit providing its spatial coherence and further to a photodetector. In very turbid media, the multiple-to-single light-scattering spectral line width ratio is determined by the ratio of line widths in two collecting optical fibers. Then the particle size is determined by the spectrum of multiple rather than single scattering.     

Photothermal ionization spectroscopy for shallow impurities in ultra-pure silicon

We report the comprehensive results obtained in our group and last few years for the shallow impurities in ultrapure silicon by use of photothermal ionization spectroscopy. The new results reported here include the discovery and investigation of new shallow impurity centers in Si, the detection for the compensation of different types of impurities, the accurate determination for the spin-orbit splitting . of valence band for Si, and the phonon duplicates and Fano resonance for the transitions of shallow impurities in Si. In addition it is also shown experimentally that the sensitivity of the photothermal ionization spectroscopy as used for detecting the concentration of shallow donors in Si can reach as high as 10⁸ cm^–3, much higher than that reported in the literatures up to date, and line width for the sharpest spectral lines in the spectrum is about 0.08 cm^–1, that is, 10 eV.     

An optical probe for local ion temperature measurements in a plasma

Local measurements of the ion temperature and the spectral emissivity have been performed in the magnetized plasma of the PSI‐2 device using an optical probe. The proper operation of the probe could be demonstrated. The probe collects the light emission from a small separated plasma volume thus enabling to determine the ion temperature from Doppler‐broadening of suited spectral lines. In addition to the technical features stray light and finite Larmor radii effects ‐ limiting the spatial resolution ‐ are discussed. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Langmuir probe and optical emission spectroscopy studies for RF magnetron sputtering during TiON thin film deposition

Low-pressure plasma of gas mixture of Ar, O₂ and N₂ generated by RF magnetron sputtering was characterized by Langmuir probe and optical emission spectroscopy (OES). The electron temperature (T_e), ion density (n_i) and electron energy distribution function (EEDF) in Ar-O₂-N₂ plasma atmosphere were calculated from I-V characteristic of Langmuir probe. Boltzmann plot method was applied for calculating the vibrational temperature (T_vib) of the second positive system of N₂ (N₂SPS) in Ar-O₂-N₂ plasma. The T_e, n_i, EEDF and T_vib in Ar-O₂-N₂ plasma were studied as a function of O₂ percentages. It was found, the T_vib increased from 0.47 eV to 0.55 eV as the oxygen percentage in Ar-N₂-O₂ plasma increased from 10% to 40%. Further, the T_e increased from 1.6 eV to 3 eV as the O₂ concentration increased from 10% to 40%.     

Photothermal modulation of laser diode wavelength: application to sinusoidal phase-modulating interferometer for displacement measurements

In this paper, a novel laser-diode (LD) sinusoidal phase-modulating (SPM) interferometer, which utilizes a photothermal technique for LD wavelength modulation, is proposed to measure displacements with a nanometer accuracy. In conventional LD–SPM interferometers, the LD intensity modulation is concurrent with the wavelength modulation, which increases measurement errors. Using the photothermal technique, the LD wavelength modulation can be accomplished with negligible concomitant intensity modulation, and the measurement errors are thus eliminated. The computer simulations and experiment results verify the usefulness of this novel interferometer.     

Multiaxis interferometric displacement measurement for local probe microscopy

We present an overview of design approaches for nanometrology measuring setups with a focus on interferometry techniques and associated problems. The design and development of a positioning system with interferometric multiaxis monitoring and control is presented. The system is intended to operate as a national nanometrology standard combining local probe microscopy techniques and sample position control with traceability to the primary standard of length.     

Positron beam studies of solids and surfaces: A summary

A personal overview is given of the advances in positron beam studies of solids and surfaces presented at the 10th International Workshop on Positron Beams, held in Doha, Qatar, in March 2005. Solids studied include semiconductors, metals, alloys and insulators, as well as biophysical systems. Surface studies focussed on positron annihilation-induced Auger electron spectroscopy (PAES), but interesting applications of positron-surface interactions in fields as diverse as semiconductor technology and studies of the interstellar medium serve to illustrate once again the breadth of scientific endeavour covered by slow positron beam investigations.     

Photothermal deflection microscopy for imaging sub-micronic defects in optical materials

Photothermal deflection is widely used to study defects in optical coatings and role of these defects in laser damage. Because defects responsible for laser damage are assumed to be nanometer-sized and lowly absorbing, both high spatial resolution and high sensitivity are required to detect them. In this work we theoretically and experimentally explore the capability of collinear photothermal deflection to give micronic resolution by reduction of the pump beam diameter. Thanks to a model describing temperature distribution and photothermal deflection, we have studied the effects of pump beam focusing on photothermal deflection. Then, we have developed a high resolution, high sensitivity microscope based on the photothermal deflection of a transmitted probe beam. The setup is characterized and the theoretical predictions are checked. We present a test of lateral spatial resolution obtained on specially prepared absorbing resolution targets and show that a lateral spatial resolution of 1 μm is reached on non-isolated defects. In case of single defects, we expect that 10 nm sized defects could be detected.     

Excited-state molecular vibration observed for a probe pulse preceding the pump pulse by real-time optical spectroscopy

It is shown experimentally that the absorbance change observed in the "negative" time range, where probe pulse precedes pump pulse in real-time vibrational spectroscopy is induced only by the excited-state wave-packet motion as theoretically expected. Coherent molecular vibration of a polymer in the excited state was observed in the real-time trace without the effect of wave-packet motion in the ground state, which usually makes it difficult to ascribe the signal either to the ground state or to the excited state.