Photoluminescence of Er<Superscript>3+</Superscript> ions in layers of quasi-ordered silicon nanocrystals in a silicon dioxide matrix

The spectra and kinetics of photoluminescence from multilayered structures of quasi-ordered silicon nanocrystals in a silica matrix were studied for undoped samples and samples doped with erbium. It was shown that the optical excitation energy of silicon nanocrystals could be effectively transferred to Er³⁺ ions, which was followed by luminescence at a wavelength of 1.5 µm. The effectiveness of energy transfer increased as the size of silicon nanocrystals decreased and the energy of exciting light quanta increased. The excitation of erbium luminescence in the structures was explained based on dipole-dipole interaction (the Förster mechanism) between excitons in silicon nanocrystals and Er³⁺ ions in silica surrounding them.     

Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation

The photoluminescence (PL) spectra and kinetics of erbium-doped layers of silicon nanocrystals dispersed in a silicon dioxide matrix (nc-Si/SiO₂) are studied. It was found that optical excitation of nc-Si can be transferred with a high efficiency to Er³⁺ ions present in the surrounding oxide. The efficiency of energy transfer increases with increasing pumping photon energy and intensity. The process of Er³⁺ excitation is shown to compete successfully with nonradiative recombination in the nc-Si/SiO₂ structures. The Er³⁺ PL lifetime was found to decrease under intense optical pumping, which implies the establishment of inverse population in the Er³⁺ system. The results obtained demonstrate the very high potential of erbium-doped nc-Si/SiO₂ structures when used as active media for optical amplifiers and light-emitting devices operating at a wavelength of 1.5 μm.     

Energy transfer from the host to Er<Superscript>3+</Superscript> dopants in semiconductor SnO<Subscript>2</Subscript> nanocrystals segregated in sol–gel silica glasses

Undoped and Er³⁺-doped glass–ceramics of composition (100−x)SiO₂–xSnO₂, with x = 5 or 10 and with 0.4 or 0.8 mol% of Er³⁺ ions, were synthesised by thermal treatment of precursor sol–gel glasses. Structural studies were developed by X-Ray Diffraction. Wide band gap SnO₂ semiconductor quantum-dots embedded in the insulator SiO₂ glass are obtained. The mean radius of the SnO₂ nanocrystals, ranging from 2 to 3.2 nm, is comparable to the exciton Bohr radius. The luminescence properties have been analysed as a function of sample composition and thermal treatment. The results show that Er³⁺ ions are partially partitioned into the nanocrystalline phase. An efficient UV excitation of the Er³⁺ ions by energy transfer from the SnO₂ nanocrystal host is observed. The Er³⁺ ions located in the SnO₂ nanocrystals are selectively excited by this energy transfer mechanism. On the other hand, emission from the Er³⁺ ions remaining in the silica glassy phase is obtained by direct excitation of these ions.     

Erbium excitation in a SiO<Subscript>2</Subscript>: Si-nc matrix under pulsed pumping

The photoluminescence of Er³⁺ ions in a SiO₂ matrix containing silicon nanocrystals 3.5 nm in diameter is studied under resonant and nonresonant pulsed pumping with pulses 5 ns in duration. The effective erbium excitation cross section under pulsed pumping, σ_eff = 8.7 × 10^?17 cm₂, is close to that for nanocrystals. Comparison of the erbium photoluminescence intensity obtained for a SiO₂ matrix with and without nanocrystals made it possible to determine the absolute concentration of optically active nanocrystals capable of exciting erbium ions, the concentration of optically active erbium, and the average number of erbium ions excited by one nanocrystal. The study revealed that excitation transfer from one erbium ion to another is a relatively slow process, which accounts for the low efficiency of erbium ion excitation under pulsed pumping in a SiO₂ matrix containing silicon nanocrystals.     

Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

Population inversion of the energy levels of Er³⁺ ions in Si/Si_1?xGe_x:Er/Si (x = 0.28) structures has been achieved due to electron excitation transfer from the semiconductor matrix. An analysis of the photoluminescence kinetics at a wavelength of 1.54 μm shows that up to 80% of the Er³⁺ ions are converted into excited states. This effect, together with the high photoluminescence intensity observed in the structures studied, shows good prospects for obtaining lasers compatible with planar silicon technology.     

Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescence

The Stark splitting of the energy levels of Er³⁺ ions implanted in a structure made up of alternating layers of silicon dioxide and quasi-ordered silicon nanocrystals is calculated. The level splitting is caused by the electric field of the image charges induced at the interfaces between layers with different permittivities. The splitting was established to increase as the contrast in permittivity between the silicon dioxide and silicon nanocrystal layers increases, as well as when the erbium ions approach the layer interface. The results obtained offer an adequate explanation of the experimentally observed additional broadening of the erbium photoluminescence band (0.8 eV) with increasing characteristic size of the silicon nanocrystals.     

Visible upconversion emission and non-radiative direct Yb to Er energy transfer processes in nanocrystalline ZrO2:Yb,Er

Wide band gap Yb³⁺ and Er³⁺ codoped ZrO₂ nanocrystals have been synthesized by a modified sol-gel method. Under 967 nm excitation strong green and red upconversion emission is observed for several Er³⁺ to Yb³⁺ ions concentration ratios. A simple microscopic rate equation model is used to study the effects of non-radiative direct Yb³⁺ to Er³⁺ energy transfer processes on the visible and near infrared fluorescence decay trends of both Er³⁺ and Yb³⁺ ions. The microscopic rate equation model takes into account the crystalline phase as well as the size of nanocrystals. Nanocrystals phase and size were estimated from XRD patterns. The rate equation model succeeds to fit simultaneously all visible and near infrared fluorescence decay profiles. The dipole-dipole interaction parameters that drive the non-radiative energy transfer processes depend on doping concentration due to crystallite phase changes. In addition the non-radiative relaxation rate (⁴I_11/2→⁴I_13/2) is found to be greater than that estimated by the Judd-Ofelt parameters due to the action of surface impurities. Results suggest that non-radiative direct Yb³⁺ to Er³⁺ energy transfer processes in ZrO₂:Yb,Er are extremely efficient.     

Energy Back Transfer Induced Color Controllable Upconversion Emissions in La2MoO6:Er3+/Yb3+ Nanocrystals for Versatile Applications

Color controllable Er³⁺/Yb³⁺‐codoped La₂MoO₆ upconverting nanocrystals are successfully synthesized via a facile sol‐gel method. Under the irradiation of 980 nm light, the entire samples exhibit dazzling upconversion (UC) emissions arising from the intra‐4f transitions of Er³⁺ ions and the UC emission intensity is strongly dependent on the Yb³⁺ ion concentration. Moreover, by controlling the Yb³⁺ ion concentration, the emission color is changed from green to yellow and finally to red as a result of the energy back transfer from Er³⁺ to Yb³⁺ ions, which is further verified by the theoretically discussion based on the steady‐state rate expressions. The optical thermometric properties of the prepared nanocrystals based on the (²H_11/2,⁴S_3/2) thermally coupled levels of Er³⁺ ions are systematically studied by analyzing the temperature‐dependent green UC emission spectra in the range of 303–663 K. The maximum sensor sensitivity of resultant nanocrystals is determined to be 0.0083 K⁻¹ at 510 K. Furthermore, the emitting color of the synthesized nanocrystals relies on the temperature. In addition, the heating effect induced by the excitation pump power is also investigated and the host lattice temperature is enhanced from 319 to 404 K with raising the pump power from 159 to 757 mW.     

Excitation of Er atoms by energy transfer from Si nanocrystallites embedded in SiO2 matrices fabricated by laser ablation

We have investigated excitation of Er³⁺ ions via energy transfer from Si nanocrystallites embedded in SiO₂ films. The Er-doped films were fabricated using a laser ablation technique. We found that a photoluminescence (PL) excitation spectra of Er³⁺ ions coincides with that of Si nanocrystallites. Thus, it is evident that Er³⁺ ions are excited via the luminescent singlet state in Si nanocrystallites. Furthermore, we obtained the results that support the energy transfer mechanism. PL intensity of Er³⁺ ions increases with Er concentration while that of Si nanocrystallites decrease inversely. PL intensity of Er³⁺ ions increases with temperature from cryogenic to room temperature under photo-excitation at power density higher than 110 mW/cm². The increase is characteristic of the luminescent state in Si nanocrystallites but not any state in Er³⁺ ions. PACS 61.72.Ww; 61.46.+w; 81.15Fg     

Enhanced upconverted photoluminescence in Er and Yb codoped ZnO nanocrystals with and without Li ions

The upconversion luminescence spectral intensity of Er³⁺ in Er³⁺ and Yb³⁺ codoped ZnO nanocrystals with and without Li⁺ are investigated. Yb³⁺ ions as a tradition sensibilizer have efficient energy transfer processes from Yb³⁺ (²F_5/2) to Er³⁺ (⁴I_13/2, ⁴I_11/2, ⁴F_9/2), which lead to the increment of upconversion luminescence intensity. Following by adding Li⁺ to the Er³⁺ and Yb³⁺ codoped ZnO nanocrystals, the upconversion intensity emitted by Er³⁺ ions is found greatly enhanced. The enhancement is attributed to the distortion of the local field symmetry of Er³⁺ ions, so increases various intra-4f transitions of Er³⁺ ions. Both Yb³⁺ and Li⁺ can disperse Er³⁺ ions in specimen, so reduced the interaction between neighboring Er³⁺ ions.     

Morphology-dependent upconversion luminescence of ZnO:Er nanocrystals

Morphology impact on the upconverted luminescence of ZnO:Er³⁺ nanocrystals was studied with controllable morphology of nanorod, prickly sphere-like, column-like, branch rod, prism-like, and grain-like, prepared via the cetyltrimethylammonium bromide (CTAB)-assisted hydrothermal process. The upconversion emission of Er³⁺ with 980 nm excitation demonstrated morphology sensitivity which was related with the local environments of Er³⁺ ions in ZnO and doping efficiency. Under ultraviolet (UV) direct excitation, where exciton and defect emissions of ZnO appeared, morphology sensitivity was discussed in terms of surface-to-volume ratios.     

Upconversion luminescence in Er-doped germanate-oxyfluoride and tellurium-germanate-oxyfluoride transparent glass-ceramics

Upconversion luminescence has been studied for Er³⁺ in a germanate-oxyfluoride and a tellurium-germanate-oxyfluoride transparent glass-ceramic using 800 nm excitation. Significantly increased upconversion luminescence was observed from transparent glass-ceramics compared with that from their corresponding as-prepared glasses. In addition to a strong green emission centered at 545 nm from ⁴S_3/2 state and a weaker red emission centered at 662 nm from ⁴F_9/2 state generally seen from Er³⁺-doped glasses, a violet emission centered at 410 nm from ²H_9/2 state and a near-ultra-violet emission centered at 379 nm from ⁴G_11/2 state were also observed from transparent glass-ceramics. The upconversion luminescence of Er³⁺ ions in transparent glass-ceramics revealed sharp Stark-splitting peaks generally seen in a crystal host. The increased upconversion efficiency is attributed to the decreased effective phonon energy and the increased energy transfer between excited ions when Er³⁺ ions were incorporated into the precipitated β-PbF₂ nanocrystals.     

Photoluminescence of Er3+ ions in amorphous silicon layers under intensive laser excitation

Transients of the photoluminescence (1.54 μm) of Er³⁺ ions embedded in an amorphous silicon matrix excited with intensive laser pulses are simulated using a phenomenological model which takes into account both the defect-related excitation mechanism and stimulated optical transitions in the ions. The simulated transients are compared with the experimental ones observed in Er-doped amorphous silicon layers under pulsed laser excitation. The modeling and the experimental results demonstrate a possibility to realize a regime of superradiance in the system of Er³⁺ ions pumped via an electronic excitation of the amorphous matrix. Received: 7 August 2001 / Revised version: 1 November 2001 / Published online: 17 January 2002     

氟化物、氟磷酸盐和磷酸盐玻璃中Er3+离子的发光研究

测定了氟化物、氟磷酸盐和磷酸盐玻璃中Er³⁺离子的吸收、荧光和激发光谱,解释了基质玻璃对Er³⁺离子发光的影响。进一步研究了在这三种基质玻璃中Er³⁺离子发光的浓度效应和温度效应,讨论了Er³⁺离子内和离子间的能量转移过程。 关键词：     

Analysis of the optical properties of Er3+-doped strontium barium niobate nanocrystals using time-resolved laser spectroscopy

This paper reports the results obtained in strontium barium niobate (SBN) nanocrystals in glasses doped with 1, 2.5 and 5 mol% of Er³⁺ ions. The melt-quenching method was applied to fabricate the glasses with composition SrO–BaO–Nb₂O₅–B₂O₃ and further thermal treatment was used to obtain glass ceramic samples from the glass precursor. X-ray diffraction patterns confirmed the formation of SBN nanocrystals with an average size of about 50 nm in diameter. Time-resolved fluorescence spectra for the emission of Er³⁺ ions at 1550 nm have been analyzed in order to confirm the incorporation of the Er³⁺ ions into the nanocrystals. Green frequency upconversion emission under excitation at 975 nm coming from the ions in the nanocrystals has been obtained. This intense upconversion is about a factor of 500 higher than that obtained from the ions which reside in the glassy phase. Moreover, temporal evolution studies have been carried out with the purpose of determining the involved upconversion mechanism and the importance of these processes as a source of losses for the optical amplification at 1550 nm.     

Judd–Ofelt analysis and upconversion emission of Er3+–Yb3+ co-doped oxyfluoride glass ceramics containing LaF3 nanocrystals

Er³⁺–Yb³⁺ co-doped glasses and glass ceramics containing LaF₃ nanocrystals were prepared and their absorption spectra obtained. The Judd–Ofelt parameters Ω _t (t?=?2,?4,?6) for f–f transition of Er³⁺, as well as spontaneous emission probabilities, branching ratios and radiative lifetimes for stimulated emission of each band were determined. Addition of Er³⁺ and Yb³⁺ ions into low-phonon energy LaF₃ nanocrystals makes the upconversion emission of Er³⁺–Yb³⁺ co-doped glass ceramic much stronger than that of Er³⁺–Yb³⁺ co-doped glass.     

Infrared-to-visible upconversion in Er and Er/Yb activated Sb2O4 nanopowders prepared by sol-gel route

We prepared Er³⁺ doped and Er³⁺/Yb³⁺ codoped Sb₂O₄ nanocrystals by the sol-gel method. The Raman, X-ray diffraction (XRD), transmission electron microscope (TEM), and photoluminescence spectra of the samples were studied. The phonon energy of the Sb₂O₄ nanocrystals is very low (the maximum value being 461 cm⁻¹). The upconversion (UC) red emission of the Er³⁺/Yb³⁺ codoped sample is very strong at 975 nm laser diode excitation. The Sb₂O₄ nanocrystals will be a promising luminous material.     

Effective excitation cross section and lifetime of Er<Superscript>3+</Superscript> ions in Si: Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy

A series of Si: Er electroluminescent diode structures is fabricated by sublimation molecular-beam epitaxy. The diode structures efficiently emit at a wavelength of 1.5 μm under conditions of p-n junction breakdown at room temperature. The effective cross section of excitation of Er³⁺ ions with hot carriers heated by the electric field of a reverse-biased p-n junction and the lifetime of Er³⁺ ions in the first excited state ⁴I_13/2 are determined for structures that emit in a mixed breakdown mode and are characterized by the maximum intensity and excitation efficiency of the Er³⁺ electroluminescence.     

Photoluminescence characteristics of energy transfer between Er and Bi in Gd2O3: Er, Bi

The phosphors, Bi³⁺- activated Gd₂O₃:Er³⁺, were prepared by sol-gel combustion method, and their photoluminescent properties were investigated under ultraviolet light excitation. The emission spectrum exhibited sharp peaks at about 520, 535, 545, 550 and 559 nm due to (²H_11/2, ⁴S_3/2)→⁴I_15/2 transitions of Er³⁺ ions. The luminescent intensity was remarkably improved by the incorporation of Bi³⁺ ions under 340 nm light excitation, which suggested very efficient energy transfer from Bi³⁺ ions to Er³⁺ions. The introducing of Bi³⁺ ions broadened the excitation band of the phosphor, of which a new strong peak occurred ranging from 320 to 360 nm due to the 6s²→6s6p transition of Bi³⁺ ions. There is significant energy overlap between the emission band of Bi³⁺ ions and the excitation band of Er³⁺ ions. Under 340 nm light excitation, Bi³⁺ absorbed most of the energy and transferred it to Er³⁺. The energy transfer probability from Bi³⁺ to Er³⁺ is strongly dependent on the Bi³⁺ ion concentration. Also, the sensitization effectiveness was studied and discussed in this paper.