2H-Nb0.9Ta0.1Se2中磁通涡旋输运的标度行为

测量了2H-Nb_0.9Ta_0.1Se₂单晶样品在不同电流下电压随磁场变化的曲线V(H),并从V(H)曲线得到V(I)数据.使用标度关系V=α(I-I_c)^β进行了拟合,得到了临界电流随磁场I_c(H)和微分电阻随磁场R_d的变化关系.在微分电阻随磁场变化的曲线中,电流较大时,靠近上临界磁场H_c2附近出现一个强峰,而在低电流下,该峰消失.同 关键词： 磁通涡旋 标度定律 临界电流峰效应     

用两带Ginzburg-Landau理论分析两带超导体Lu2Fe3Si5的表面临界磁场

用两带Ginzburg-Landau(GL)理论分析了Lu₂Fe₃Si₅的表面临界磁场,当超导体的表面与任一主晶面重合,且外磁场平行于超导体的表面时,比值H_c3/H_c2(H_C2是Lu₂Fe₃Si₅的上临界磁场)强烈依赖于温度. 当超导体的表面是bc平面,且 关键词： 两带超导体 GL理论 2Fe₃Si₅')" href="#">Lu₂Fe₃Si₅ 表面临界磁场     

磷掺杂硼钒氧簇化合物的二维相关红外光谱研究

一个新颖的磷掺杂硼钒氧簇化合物[Li(H₂O)₂]₂[Cu(en)₂]₃[H₂en]₂[V₁₂P₁₂B₆O₆₈(OH)₄(H₂O)]·3(H₂O)1通过水热法合成,通过Li⁺连接成一维无限结构,再通过氢键连成三维立体结构。针对该化合物,通过二维红外相关光谱并作了详细分析,化合物1簇阴离子振动偶极矩对磁场和温度的变化均有响应峰,2D-IR COS提供了一种结构表征新方法。     

SiH4激光等离子体内H谱线的线型研究

本工作利用光学多道分析仪(OMA Ⅲ)测量了脉冲TEA CO₂激光诱发的SiH₄等离子体内H Balmer系的H_α,H_σ和H_γ线的线型。结果表明,三条谱线的FWHM(半值全宽度)随跃迁上能级的主量子数的增加而增加,即△λ_1/2(H_α)<△λ_1/2(H_β)<△λ_1/2(H_γ)。通过对等离子体内各类加宽机制的讨论,得出等离子体内谱线的主要加宽机制为Stark加宽。由H_α线的实验线型与Stark加宽理论线型的拟合,得到等离子体的两个重要参量,平均电子密度N≈10¹⁷cm^-3,电子温度T≈40 000K。由H_β线的时间分辨测量得到等离子体的电子密度随时间的演变曲线。 关键词：     

无序二维约瑟夫森结阵列中磁场引起的涡旋玻璃态相变

采用电阻阻错结的无序二维约瑟夫森结阵列模型,数值研究超导薄膜中垂直磁场引起的涡旋运动.通过分析磁场激发产生的涡旋度Ne及低频电压噪声S₀的变化特性,得到如下结论：在无序超导体中固定温度不变,随着磁场的减弱涡旋液态经过准有序的布拉格相,涡旋玻璃相重新进入到低磁场下的钉扎稀磁液相. 由于在涡旋玻璃相中,电流驱动下的噪声值表现出一个峰,表明系统处于无序与有序相互竞争的亚稳态,并且临界电流应有峰值效应. 计算得到噪声值的变化与Okuma等得到的无序超导Mo_xSi_1-x膜实验现象一致,并能解释磁场降低引起的重新进入钉扎的稀磁液相行为. 关键词： 约瑟夫森结阵列 磁通玻璃 重新进入 峰值效应     

{Cu3}单分子磁体在磁场中的热纠缠

本文研究单分子磁体Na₉[Cu₃Na₃(H₂O)₉ (α-AsW₉O₃₃)₂]·26H₂O中三角自旋 环在磁场作用下的热纠缠性质, 利用数值计算求出任意两个Cu²⁺离子量子比特之间的配对纠缠度, 分别记为C₁₂, C₂₃和C₁₃. 研究结果表明, 磁场的方向和大小以及温度对配对纠缠度具有重要影响, 而且参数的变化对C₁₂, C₂₃和C₁₃的影响也是各不相同. 给出外加三个不同方向的磁场时, 配对纠缠度C₁₂, C₂₃和C₁₃各自对应的临界温度T_c随磁场强度的变化图, 由此可以得到单分子磁体三角自旋环中存在纠缠态的参数范围. 通过选择适当的磁场方向和大小以及温度等实验参数, 可以有效地调节和提高单分子磁体中的配对纠缠度. 关键词： 配对纠缠 单分子磁体 三角自旋环     

环形等离子体中电子温度梯度不稳定性的粒子模拟

用粒子模拟方法求解描述环形等离子体中电子温度梯度静电模的回旋动力学方程.方程采用圆磁通面的轴对称环形几何系统，考虑了有限拉摩半径、电子渡越频率k_∥v _∥以及环形漂移(曲率和磁场梯度)运动w_D(v²_⊥,v ²_∥,θ)的效应.简述了粒子模拟的基本方法.采用了四阶变步长积分格式，使计算省时、简便.讨论了模的基本特征 , 并且给出了临界梯度对电子温度与离子温度之 关键词： 电子温度梯度不稳定性 粒子模拟 变步长积分格式 临界梯度     

YBa2Cu3O7-δ熔融织构样品的磁响应研究

对YBa₂Cu₃O_7-δ熔融织构样品在不同温度、不同磁场不同外场扫描速率下进行了磁滞回线测量,获得了电流密度J(T,B),lnE-lnJ曲线以及热激活能U₀(T,B)随温度、磁场的变化关系,从而分析了该样品磁响应特性,特别是第二峰(简称峰)受外场扫描速率的影响,探讨了峰形成的真正原因,以及影响峰位置、大小的各种因素 关键词： 磁响应 熔融织构 峰效应 临界电流密度     

两种以Znq2为基体的新型电致发光材料的合成与性能

以8-羟基喹啉为配体的金属配合物是一种性能优良的有机电致发光材料,其中有关8-羟基喹啉铝(Alq₃)研究已有大量报道,8-羟基喹啉锌(Znq₂)研究还有待发展。介绍了两种以Znq₂为基体的新型有机电致发光材料Znq₂(H₂O)₂和(Znq₂)₄的合成方法。用IR、XRD、TG、DTA和荧光测试方法进行表征与分析表明:Znq₂(H₂O)₂和(Znq₂)₄的玻璃化温度(T_g)分别为104.2℃和204.9℃;在161℃下Znq₂(H₂O)₂脱去水分子成为Znq₂,在361℃高温下四聚体(Znq₂)₄裂解为单体Znq₂;Znq₂(H₂O)₂和(Znq₂)₄具有很好的发光性能,在光致发光谱中λ_max分别是505,550nm。     

脉冲磁场处理对碳纳米管掺杂MgB2线材临界电流密度的影响

对碳纳米管(CNT)掺杂MgB₂超导体磁场处理后的行为进行了研究. 结果表明，CNT掺杂MgB₂超导体经5T脉冲磁场处理后临界电流密度J_c(H)在低磁场下提高了2—3倍，高场下提高一个数量级以上，扫描电镜结果显示CNT沿着处理磁场方向规则排列并且成为MgB₂基体的形核中心和高效的磁通钉扎中心. 关键词： 2')" href="#">MgB₂ 碳纳米管 脉冲磁场处理     

n维格子上Ising模型临界温度的上界

本文利用耦合的技巧,建立了Ising模型与接触过程的联系。由此给出了Ising模型临界温度的上界,即n维Ising模型的临界点β_c(n)应满足 exp{2β_c(n)(2n-1)}·(exp{2β_c(n)}-1)≥2/2n-1。特别是三维Ising模型的临界点β_c(3)>1/2ln1.17。 关键词：     

Shift of the superconducting critical parameters due to correlated disorder

In a nonuniform superconductor with randomly distributed local critical temperature both the macroscopic critical temperature and the upper critical magnetic field strongly depend on the characteristic correlation length ρ₀ of correlated disorder. The shift of the macroscopic critical parameters from those for non-correlated disorder, which does not exist for white noise, is obtained for small ρ₀ in the framework of the Ginzburg-Landau theory.     

超导材料NbS2上临界磁场的理论分析

根据两带Ginzburg-Landau 理论计算了层状超导材料NbS₂的上临界磁场, 以及上临界磁场各向异性参数随温度的变化情况, 并将NbS₂与MgB₂, NbSe₂上临界磁场的各向异性进行比较. 所得计算结果与已有实验数据符合得很好, 充分说明了NbS₂的超导电性具有两能隙特征. NbS₂上临界磁场各向异性参数在5.0 K附近逐渐变小, 这与MgB₂和NbSe₂有相似之处. 但NbS₂的上临界磁场各向异性参数大约为7.3, 明显大于MgB₂和NbSe₂. 计算结果还表明, NbS₂较大能隙所对应能带的有效质量比约为54, 另一能带的有效质量基本为各向同性.     

温度对垂直布洛赫线链解体临界面内磁场区间的影响

实验研究了温度对液相外延石榴石磁泡薄膜中条状普通硬磁畴壁内的垂直布洛赫线（ＶＢＬ）链解体临界面内磁场区间的影响。发现存在一对特征温度T⁽¹⁾₀ 和 T⁽²⁾₀（前者比后者略低但均高于室温），在从室温到T⁽²⁾₀的每个温度Ｔ下，使ＶＢＬ逐渐消失的面内磁场Ｈ_ip都分布于一个与Ｔ有关的区间[H_ip⁽¹⁾(T), H_ip⁽²⁾(T)]内，称为临界面内磁场区间：H_ip^{＜H_ip(1)(T)时，ＶＢＬ链保持不变;H_ip(1)(T)< H_ip < H_ip(2)(T)时，随着Ｈ_ip的增加，越来越多的ＶＢＬ消失;H_ip > H_ip(2)(T)时，所有ＶＢＬ都消失。H_ip(1)(T),H_ip(2)(T)及H_ip(2)(T)-H_ip(1)(T)均随Ｔ的升高而下降，前二者分别于T(1)₀ 和 T(2)₀降为零。比值H_ip(2)(T)/H_ip(1)(T)随Ｔ的升高而升高，在低温段（包括室温）升高缓慢且约为21/2,在T(1)₀附近急剧升高且至T(1)₀时趋于∞。对以上结果做了理论分析。 关键词：}     

Properties of parallel upper critical field within continuous Ginzburg–Landau model

In this paper, we employ a continuous Ginzburg–Landau model to study the behaviors of the parallel upper critical field of an intrinsically layered superconductor. Near T_c where the order parameter is nearly homogeneous, the parallel upper critical field is found to vary as (1−T/T_c)^1/2. With a well-localized order parameter, the same field temperature dependence holds over the whole temperature range. The profile of the order parameter at the parallel upper critical field is of a Gaussian type, which is consistent with the usual Ginzburg–Landau theory. In addition, the influences of the unit cell dimension and the average effective masses on the parallel upper critical field and the associated order parameter are also addressed.     

金属玻璃Zr78Co22中的弱局域化效应

测量了超导金属玻璃Zr₇₈Co₂₂的磁阻和上临界磁场H_c2。磁阻的实验结果定性地与包含自旋-轨道散射的三维弱局域化理论相符,而定量则有明显的偏差,其偏差主要来源于超导涨落效应。在所测量的温区内,上临界磁场H_c2随温度呈线性变化,同时还得出超导金属玻璃Zr₇₈Co₂₂中的非弹性散射主要来源于电子-声子相互作用,其散射几率τ_i^-1=1.3×1O¹⁰T²,略小于Bergmann理论所预言的值。 关键词：     

Angular dependence of magnetoresistivity in c-oriented MgB thin film

The anisotropy of MgB₂ is still under debate: its value, strongly dependent on the kind of sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on MgB₂ c-oriented superconducting thin film. To evaluate the anisotropy, we followed two different approaches. Firstly, magnetoresistivity was measured as a function of temperature at selected magnetic fields applied both parallel and perpendicular to the c-axis; secondly, we measured magnetoresistivity at selected temperatures and magnetic fields, varying the angle θ between the magnetic field and the c-axis. The anisotropy estimated from the ratio between the upper critical fields parallel and perpendicular to the c-axis and the one obtained in the framework of the scaling approach within the anisotropic Ginzburg-Landau theory are different but show a similar trend in the temperature dependence. Some differences in the upper critical field and in its anisotropy of our film with respect to single crystals are emphasized: some of these aspects can be accounted for by an analysis of upper critical fields within a two-band model in presence of disorder and/or crystallographic strain. Received 12 July 2002 / Received in final form 17 September 2002 Published online 29 November 2002     

Temperature Dependence of the Upper Critical Field in Disordered Hubbard Model with Attraction

We study disorder effects upon the temperature behavior of the upper critical magnetic field in an attractive Hubbard model within the generalized DMFT+Σ approach. We consider the wide range of attraction potentials U—from the weak coupling limit, where superconductivity is described by BCS model, up to the strong coupling limit, where superconducting transition is related to Bose–Einstein condensation (BEC) of compact Cooper pairs, formed at temperatures significantly higher than superconducting transition temperature, as well as the wide range of disorder—from weak to strong, when the system is in the vicinity of Anderson transition. The growth of coupling strength leads to the rapid growth of H_c2(T), especially at low temperatures. In BEC limit and in the region of BCS–BEC crossover H_c2(T), dependence becomes practically linear. Disordering also leads to the general growth of H_c2(T). In BCS limit of weak coupling increasing disorder lead both to the growth of the slope of the upper critical field in the vicinity of the transition point and to the increase of H_c2(T) in the low temperature region. In the limit of strong disorder in the vicinity of the Anderson transition localization corrections lead to the additional growth of H_c2(T) at low temperatures, so that the H_c2(T) dependence becomes concave. In BCS–BEC crossover region and in BEC limit disorder only slightly influences the slope of the upper critical field close to T _c . However, in the low temperature region H_c2 (T may significantly grow with disorder in the vicinity of the Anderson transition, where localization corrections notably increase H_c2 (T = 0) also making H_c2(T) dependence concave.     

在Tokamak装置中用中空超导环段冻结环向磁场的设想

本文提出一个设想:即将n个中空超导圆柱体放置于n饼纵场线圈之中,分段冻结环向磁场,则其所需要的电功率将比常规线圈降低到2/n倍。我们知道超导材料的冻结场可近似地写为。H_fj(r,T)=H_fj(r,0)[1-(T/(T_c))²。因此选定T=T₁,当轴向场H在大圆环的内壁达到H≥H_fj(r,T₁)时,中空体的内边缘达到临界场,则场进入中空区,再使H降到零,中     

关于超导临界温度级数收敛半径的一个注记

本文指出,对于实际的归一化有效声子谱函数g(ω),一般来说,z_ph≡F(-ω_ph^-2是函数z=F(y)≡∫₀^(ω_ph)(ω²y)/(ω²y+1)g(ω)dω的反函数的分支点。因此,在估算超导T_c级数的收敛半径时,应当予以考虑。 关键词：