Measurement of fiber chromatic dispersion using spectral interferometry with modulation of dispersed laser pulses

We propose and experimentally demonstrate a method for fiber dispersion measurement based on the modulation of laser pulses stretched by the fiber under test. The measured spectrum of the modulated pulses is the result of the interference between the stretched pulse spectra shifted by the modulation harmonics. The interference pattern is processed as in Fourier transform spectral interferometry. Unlike to conventional spectral interferometry, environmental conditions do not affect the interferogram due to the lack of any interferometer; additionally, large dispersions can be characterized by the method proposed. Its high accuracy is demonstrated in experimental comparison with the widely used phase shift technique.     

End-wall errors in temperature measurement of external convective heat transfer with Moiré deflectometry

Moiré deflectometry is a robust and simple optical method that allows obtaining the temperature field in flows with uniform pressure and two-dimensional and axisymmetric flows. Since in real configurations it is not possible to keep exactly the hypothesis of two-dimensional flow, it is necessary to asses this influence. Therefore this work studies a procedure to estimate the errors due to the end-wall and 3-D effects when Moiré deflectometry is used for measuring the temperature field of an external convective heat transfer flow with free edges.According to the value of the parameter Gr/Re², results show two tendencies. The error in temperature measurement is smaller than 1% for ratios of thermal boundary layer thickness to the test field width lower than 0.4, in turbulent forced convection flows for temperature differences of 40 K. Temperature effects are significative, multiplying the error by two for a temperature difference 50% greater. These results enable researchers to evaluate the errors of this measurement technique associated with the end-wall effect.     

Measurement of surface resistivity/conductivity of metallic alloys in aqueous solutions by optical interferometry techniques

Optical interferometry techniques were used for the first time to measure the surface resistivity/conductivity of the pure aluminium (in seawater at room temperature), UNS No.304 stainless steel (in seawater at room temperature), and pure copper (in tap water at room temperature) without any physical contact. This was achieved by applying an electrical potential across the alloys and measuring the current density flow across the alloys, during the cyclic polarization test of the alloys in different solutions. In the mean time, optical interferometry techniques such as holographic interferometry were used in situ to measure the orthogonal surface displacement of the alloys, as a result of the applied electrical potential. In addition, a mathematical model was derived in order to correlate the ratio of the electrical potential to the current density flow (electrical potential/electronic current flow = resistance) and to the surface (orthogonal) displacement of the metallic samples. In other words, a proportionality constant (surface resistivity or conductivity = 1/surface resistivity) between the measured electrical resistance and the surface displacement (by the optical interferometry techniques) was obtained. Consequently the surface resistivity (ρ) and conductivity (σ) of the pure aluminium (in seawater at room temperature), UNS No.304 stainless steel (in seawater at room temperature), and pure copper (in tap water at room temperature) were obtained. Also, electrical resistivity values (ρ) from other source were used for comparison sake with the calculated values of this investigation. This study revealed that the measured value of the resistivity for the pure aluminium (7.7 × 10¹⁰ Ω cm in seawater at room temperature) is in good agreement with the one found in literature for the aluminium oxide, 85% Al₂O₃ (5 × 10¹⁰ Ω cm in air at temperature 30 °C). Unfortunately, there is no measured value for the resistivity of cupric oxide (CuO), cuprous oxide (Cu₂O), or even the oxide of the UNS No.304 stainless steel in literature comparing those values with the measured values in this study.     

Effect of optical penetration on laser generatedthermoelastic ultrasound in solids

I.IntroductionTbegenerationofu1trasoundbytheirradiationofpulsedlaseratso1idsurfacehasbeenwidelystlldied,boththeorctica1lyandexpcrimentallyI1-8].Intheprocessoflaserthermoelasticg6nerationofu1trasound,temperatureriseinduccdbytheabsorptionoflaserenergyproducestherma1expansion,andthcnanultrasonicsourceiscreated.Sofar,thestudyof1asergenera-honofultrasoundinso1idsconcentratesmain1yonmeta1s,anduntilrecent1y,1ittleattentionhasbenpaidtonon-mctals.Inametal,1aserenergyisabsorbedonlyatthesurfaceofthesamp…     

Linewidth narrowing caused by optical feedback in a multi-mode vertical-cavity surface-emitting laser

We have studied experimentally spectral characteristics of a multi-mode vertical-cavity surface-emitting laser that is subject to optical feedback. Appropriate alignment of the feedback mirror can suppress higher-order modes and significantly decrease the spectral linewidth of the laser.     

Research on the optical field distribution and micro-fabrication model in convex-surface laser lithography

A system of convex-surface laser lithography with diode laser is established in this paper. Based on this system, a mathematical model of optical field distribution and lithography on the photoresist layer of convex-surface substrate with diode laser is presented. According to the lithography system and model, some numerical simulations are carried out. The simulation result shows that lithographic lines on convex-surface lithography are not symmetric about the optical axis of incident laser beam. Axis of lines at different vector radius on convex-surface substrate will offset from the wavefront normal of incident laser beam. The offset distance depends on the slopes of different equivalent slants. The simulative results of lithographic model agree well with the lithographic experimental data.     

Measurement of mean velocity and turbulence in supersonic boundary layers,shock waves and free jets by laser anemometry

Velocity profiles and turbulence levels have been investigated in a Mach 2 wind-tunnel using a laser anemometer which directly measures the Doppler frequency shift in the scattered laser light. The experiments were performed with the wind-tunnel operating at normal humidity. However, ice particles were always produced in the supersonic throat, making artificial seeding unnecessary. These ice particles proved to be excellent light scattering centres, and were found to respond to the rapid velocity change occurring in an oblique shock wave in a distance <0.01 cm, from which the ice particle size was calculated to be <0.1.Measurements were made across a turbulent boundary layer and compared with Pitot tube data taken under similar conditions. Measurements were also made in a highly turbulent Mach 1 free jet.     

Effect of the oxygen pressure on the microstructure and optical properties of ZnO films prepared by laser molecular beam epitaxy

A series of ZnO films were prepared on the Si (1 0 0) or glass substrate at 773 K under various oxygen pressures by using a laser molecular beam epitaxy system. The microstructure and optical properties were investigated through the X-ray diffraction, Raman spectrometer, scanning electron microscope, ultraviolet–visible spectrophotometer and spectrofluorophotometer. The results showed that ZnO thin film prepared at 1 Pa oxygen pressure displayed the best crystalinity and all ZnO films formed a columnar structure. Meanwhile, all ZnO films exhibited an abrupt absorption edge near the wavelength of 380 nm in transmission spectra. With increasing the oxygen pressure, the transmission intensity changed non-monotonically and reached a maximum of above 80% at 1 Pa oxygen pressure, based on which the band gaps of all ZnO films were calculated to be about 3.259–3.315 eV. Photoluminescence spectra indicated that there occurred no emission peak at a low oxygen pressure of 10⁻⁵ Pa. With the increment of the oxygen pressure, there occurred a UV emission peak of 378 nm, a weak violet emission peak of 405 nm and a wide green emission band centered at 520 nm. As the oxygen pressure increased further, the position of UV emission peak remained and its intensity changed non-monotonically and reached a maximum at 1 Pa. Meanwhile the intensity of green emission band increased monotonically with increasing the oxygen pressure. In addition, it was also found that the intensity of UV emission peak decreased as the measuring temperature shifted from 80 to 300 K. The analyses indicated that the UV emission peak originated from the combination of free excitons and the green emission band originated from the energy level jump from conduction band to O_Zn defect.     

大气压力对激光辐照双层板接触传热的影响

考虑激光辐照下结构变形对双层板接触传热影响可以更真实地反映两板间的传热情况,通过实验和数值模拟分析了大气压力对接触传热的影响。结果表明:大气压力对接触热阻影响非常明显,当大气压力超过一定值后,双层板界面始终接触,后板中心的温升阶段成类抛物形状;当大气压力在某一范围内,大气压力与温度矩产生的靶板挠度相当,接触面时分时合,后板的温升阶段成振荡式类线性增加;当大气压力小于某一特定值时,后板温度有一突跃过程,通过适当的设计有可能观测到该现象。     

共孔径偏振耦合分光系统中反射镜造成的相位延迟差的测量

 激光信标共孔径发射接收偏振分光系统的动态相位补偿需要测量望远镜各反射镜对s光和p光的相位延迟差。利用Stokes矢量和Mueller矩阵建立了物理模型,并推导出用测得的回光功率计算相位延迟差的解析式。提出一种通过实验测量回光功率计算反射镜相位延迟差的方法,解决了在0～2p范围内唯一确定反射镜相位延迟差的问题。实际测量了两块反射镜的相位延迟差,并将测量结果用于动态相位补偿偏振分光实验,验证了该方法的正确性。分析了偏振分光棱镜、法拉第旋光器以及近似计算这3个主要的测量误差源,并估计总测量误差约为1°。     

Measurement of transverse vibrations/visualization of mode shapes in square plate by using digital speckle pattern interferometry and wavelet transform

New filtering scheme is investigated and implemented on digital speckle pattern interferometric fringes to enhance the signal-to-noise ratio (SNR) in the speckle interferograms. To establish the potential of new filtering scheme the experiment was conducted on the vibrating cantilever beam. Experimental results revealed that the new filtering scheme is more powerful than other known filtering schemes (Kumar et al. Opt Laser Eng 2004;41:81–93. Kumar et al. Opt Laser Technol 2001;33:567–571. Shakher et al. Opt Eng 2002;41:176–180. Shakher et al. Proceedings ICICS, Singapore, 9–12 September 1997, p. 953–956. Bowler et al. Proceedings of IEE second international conference on image processing, London, 1986, p. 24–26. Lim. Opt Eng 1981;20:670–678. Devila et al. J Mod Opt 1995;42:1795–1804; Kaufmann et al. Opt Eng 1996;35:9–14). The new scheme reduced the speckle noise and improved SNR in speckle interferograms. Further, the new investigated filtering scheme is implemented to study the mode shapes of square plates under two different boundary conditions. In the first condition all the edges of the square plate were fixed while in the second condition two adjacent edges were fixed and the remaining two edges were free. From the experimental results it is clear that the mode shapes are more distinctly visible with the implementation of the new filtering scheme as compared to other known schemes. Under both the boundary conditions the recorded resonance frequencies were compared with the calculated values of resonance frequencies based on classical theory. The results obtained form DSPI show good agreement with classical theory.     

Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC

Pulsed UV laser drilling can be applied to fabricate vertical electrical interconnects (vias) for AlGaN/GaN high electron mobility transistor devices on single-crystalline silicon carbide (SiC) substrate. Through-wafer micro holes with a diameter of 50-100 μm were formed in 400 μm thick bulk 4H-SiC by a frequency-tripled solid-state laser (355 nm) with a pulse width of ≤30 ns and a focal spot size of ∼15 μm. The impact of laser machining on the material system in the vicinity of micro holes was investigated by means of micro-Raman spectroscopy and transmission electron microscopy. After removing the loosely deposited debris by etching in buffered hydrofluoric acid, a layer of <4 μm resolidified material remains at the side walls of the holes. The thickness of the resolidified layer depends on the vertical distance to the hole entry as observed by scanning electron microscopy. Micro-Raman spectra indicate a change of internal strain due to laser drilling and evidence the formation of nanocrystalline silicon (Si). Microstructure analysis of the vias’ side walls using cross sectional TEM reveals altered degree of crystallinity in SiC. Layers of heavily disturbed SiC, and nanocrystalline Si are formed by laser irradiation. The layers are separated by 50-100 nm thick interface regions. No evidence of extended defects, micro cracking or crystal damage was found beneath the resolidified layer. The precision of UV laser micro ablation of SiC using nanosecond pulses is not limited by laser-induced extended crystal defects.