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1.
We report Cu-NQR results on Ge-doped heavy-fermion superconductor CeCu2(Si1–x Ge x )2 (0<x0.2) and undoped Ce0.99Cu2.02Si2. The main effect of the Ge doping is considered to be a negative pressure, since the strength of hybridization decreases by the Ge doping. With increasing x, the dynamical characteristics of the magnetic order at x=0 change to more static ones which suggests a localized regime above x0.25. From the derived Tx phase diagram, it is suggested that the magnetic and the superconducting phases are almost degenerate in undoped CeCu2Si2. An exotic interplay between the magnetism characterized by the slow fluctuations and the superconductivity is implied in the region of small x.  相似文献   

2.
In this paper, we present our recent experimental results of magnetic and transport properties of Gd1−xLaxMn2Ge2 intermetallic compounds with the ThCr2Si2-type layered structure. The results obtained indicate that, in GdMn2Ge2, a first-order transition from a collinear antiferromagnetic to a collinear ferrimagnetic state appears with decreasing temperature at Tt3, below the Néel temperature TN. In Gd1−xLaxMn2Ge2 compounds with x=0.05 and 0.075, after ordering ferrimagnetically at Tt1, two kinds of first-order transitions from a canted ferrimagnetic to a non-collinear antiferromagnetic state and from a non-collinear antiferromagnetic to a reentrant canted ferrimagnetic state occur at Tt2 and Tt3. In Gd0.925La0.075Mn2Ge2, a field-induced metamagnetic transition from non-collinear antiferromagnetism to canted ferrimagnetism occurs at relatively low fields, accompanied by fractal like multi-step transitions, the so called “devil's stair-case”. Furthermore, a negative giant magnetoresistance (GMR) effect (Δρ/ρ15%) was observed at the field-induced metamagnetic transition. The mechanism of this negative GMR was clarified by comprehensive measurements of the resistivity on single crystals Gd0.925La0.075Mn2Ge2 and TbMn2Ge2. With further increasing x, only canted ferrimagnetism appears with a compensation temperature for 0.10<x<0.40, whereas no compensation behavior appears for x>0.50. The phase diagram obtained indicates that the overall magnetism is controlled by the Mn–Mn intralayer distance in the tetragonal c-plane, reflecting the two-dimensional arrangement of Mn atoms.  相似文献   

3.
The heavy-fermion metal CePd1−x Rh x can be tuned from ferromagnetism at x = 0 to the nonmagnetic state at some critical concentration x c . The non-Fermi liquid behavior (NFL) at xx c is recognized by the power-law dependence of the specific heat C(T) given by the electronic contribution susceptibility X(T) and volume expansion coefficient α(T) at low temperatures: C/TX(T) ∝ α(T)/T∝ 1/ √T. We also demonstrate that the behavior of the normalized effective mass M N * observed in CePd1−x Rh x at x ≃ 0.8 agrees with that of M N * observed in paramagnetic CeRu2Si2 and conclude that these alloys exhibit the universal NFL thermodynamic behavior at their quantum critical points. We show that the NFL behavior of CePd1−x Rh x can be accounted for within the frameworks of the quasiparticle picture and fermion condensation quantum phase transition, while this alloy exhibits a universal thermodynamic NFL behavior that is independent of the characteristic features of the given alloy such as its lattice structure, magnetic ground state, dimension, etc. The text was submitted by the authors in English.  相似文献   

4.
5.
The Kondo-lattice system CeCu2(Si1?x Ge x )2 exhibits an alloying induced transition from a coherent Fermi-liquid (x=0) with strongly enhanced effective masses to an antiferromagnetically ordered heavy-fermion system (x=1). This transition is studied by Gd3+ ESR in oriented powder samples. The temperature dependence of the ESR line width follows a characteristic pattern which allows one to distinguish between the different ground states. The results obtained in polycrystalline CeCu2Si2 are in good agreement with the measurements performed in single crystals. Finally we compare our results with63Cu-NMR data obtained from CeCu2Si2 and CeCu2Ge2.  相似文献   

6.
The equations of state of CeCu2Si2 and CeCu2Ge2 to about 60 GPa, as well as that of CeNi2Ge2 to 22 GPa and the valence state of Ce in CeCu2Ge2 to 20 GPa have been studied at room temperature in a diamond-anvil cell using synchrotron radiation sources. In each compound, the ambient-pressure phase (tetragonal ThCr2Si2-type structure) persisted to the highest pressure studied. The unit cell volumes of CeNi2Ge2 at ∼5 GPa and CeCu2Ge2 at ∼7 GPa, respectively, approached that of CeCu2Si2 taken at ambient pressure. From the equation-of-state data, the bulk modulus was derived to be 112.0±5.1 GPa for CeCu2Si2, 125.6±4.3 GPa for CeCu2Ge2, and 178.4±14.3 GPa for CeNi2Ge2. The valence state of Ce in CeCu2Ge2 remained trivalent throughout the pressure range investigated.  相似文献   

7.
The maximum value of hysteresis loss EhMAX due to the itinerant-electron metamagnetic (IEM) transition of La(FexSi1−x)13 and the partially substituted compounds La1−zCez(Fe0.86Si0.14)13 and La1−zPrz(Fe0.86Si0.14)13 increases when the magnetocaloric effects (MCEs) become large. It should be noted that the reduction of EhMAX without the decrease of large MCEs is achieved in La1−zCez(Fe0.86Si0.14)13 and La1−zPrz(Fe0.86Si0.14)13. For both the compound systems mentioned above, the critical temperature T0 for the IEM transition decreases and the difference between T0 and the Curie temperature TC becomes larger with decreasing TC. These results are consistent with the magnetic phase diagram of La(Fe0.86Si0.14)13 under hydrostatic pressure. Consequently, the reduction of EhMAX in La1−zCez(Fe0.86Si0.14)13 and La1−zPrz(Fe0.86Si0.14)13 is closely related with the magnetovolume effects.  相似文献   

8.
In this paper the low-temperature properties of two isostructural canonical heavy-fermion compounds are contrasted with regards to the interplay between antiferromagnetic (AF) quantum criticality and superconductivity. For CeCu2Si2, fully-gapped d-wave superconductivity forms in the vicinity of an itinerant three-dimensional heavy-fermion spin-density-wave (SDW) quantum critical point (QCP). Inelastic neutron scattering results highlight that both quantum critical SDW fluctuations as well as Mott-type fluctuations of local magnetic moments contribute to the formation of Cooper pairs in CeCu2Si2. In YbRh2Si2, superconductivity appears to be suppressed at T???10?mK by AF order (TN?=?70?mK). Ultra-low temperature measurements reveal a hybrid order between nuclear and 4f-electronic spins, which is dominated by the Yb-derived nuclear spins, to develop at TA slightly above 2?mK. The hybrid order turns out to strongly compete with the primary 4f-electronic order and to push the material towards its QCP. Apparently, this paves the way for heavy-fermion superconductivity to form at Tc?=?2?mK. Like the pressure – induced QCP in CeRhIn5, the magnetic field – induced one in YbRh2Si2 is of the local Kondo-destroying variety which corresponds to a Mott-type transition at zero temperature. Therefore, these materials form the link between the large family of about fifty low-T unconventional heavy – fermion superconductors and other families of unconventional superconductors with higher Tcs, notably the doped Mott insulators of the cuprates, organic charge-transfer salts and some of the Fe-based superconductors. Our study suggests that heavy-fermion superconductivity near an AF QCP is a robust phenomenon.  相似文献   

9.
We have explored the vicinity of the antiferromagnetic quantum critical point in the related heavy fermion metals CePd2Si2 and CeNi2Ge2 as a function of hydrostatic pressure. The normal state resistivity of the antiferromagnet CePd2Si2 near the critical pressure, at which magnetic order disappears, varies as ρ ~ Tχ(1:1 < χ < 1:4) over nearly two orders of magnitude in temperature up to about 30 K. This anomalous form for the resistivity appears to defy not only Fermi-liquid theory, but also simple phenomenological models for the effect of spin fluctuations close to a quantum critical point. An analogous unconventional behaviour is observed in the ambient pressure resistivity of the electronically and structurally equivalent, non-magnetic metal CeNi2Ge2. At pressures above 15 kbar, a new and unexpected superconducting transition appears in CeNi2Ge2 below 220 mK, which rises to higher temperatures with increasing pressure, reaching 400 mK at 26 kbar.  相似文献   

10.
Summary Dilute57Fe M?ssbauer-spectroscopy studies of RMn2X2 (X=Si and/or Ge, R=La, Ce, Pr, Nd, Sm, Eu and Gd) at 4.2 to 650 K yield the following results: Fe in RMn2X2 does not carry a magnetic moment. It reveals the magnetic order in the Mn and R sublattices through transferred hyperfine fields (∼100 kOe). The compounds LaMn2Si2, LaMn2Ge2, CeMn2Ge2, PrMn2Ge2, NdMn2Ge2 and SmMn2Ge2, known to be ferromagnets withT c=300–350 K, are antiferromagnetically ordered above their correspondingT c. TherT N values extend from 385 K (SmMn2Ge2) to 470 K (LaMn2Si2). At the ferromagnetic-antiferromagnetic phase transition, a sharp reorientation of the Mn magnetic moments relative to the crystalline axes occurs. In RMn2Si2−x Ge x with intermediatex values, the Ge is much more dominant in determining the magnetic properties of the Mn sublattice. While PrMn2Si2 is an antiferromagnet (T N=365 K) and PrMn2Ge2 is a ferromagnetantiferromagnet (T c=328 K,T N=415 K), we find that in PrMn2SiGe, the magnetic behaviour is similar to that in pure PrMn2Ge2,T c=305 K andT N=395 K. Paper presented at ICAME-95, Rimini, 10–16 September 1995.  相似文献   

11.
The temperature dependence of ρxx is studied in the vicinity of the quantum Hall to quantum Hall insulator transition (ν=1→0) in InSb/InAlSb based 2DESs. ρxx displays a symmetric temperature dependence about the transition with on the QH side and on the insulating side. A plot of 1/T0 for successive ν displays power-law divergence with 1/T0∝|ν−νc|−γ,2 with γ=2.2±0.3. This critical behavior in addition to the behavior expected of the quantum transport regime confirms that the QH/QHI transition is indeed a good quantum phase transition.  相似文献   

12.
Detailed Raman and photoluminescence (PL) measurements are reported for Si/Si1−xGex nanostructures grown by molecular beam epitaxy under near Stranski–Krastanov (S–K) growth mode conditions. In samples with x ranging from 0.096 to 0.53, we observe that an increase in the Raman signal related to Ge–Ge vibrations correlates with (i) a red shift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that for x>0.5 Ge atoms form nanometer size clusters with a nearly pure Ge core surrounded by a SiGe shell. Time-resolved PL measurements reveal a stretched-exponential long-lived PL component that is associated with compositional and dimensional fluctuations in the SiGe dots.  相似文献   

13.
Zero-temperature magnetic phase transitions exhibit an abundance of nearly critical magnetic fluctuations that allow to probe the traditional concepts of the metallic state. For the prototypical heavy-fermion compound, CeCu6−x Au x , a breakdown of the Fermi-liquid properties may be tuned by Au concentration, hydrostatic pressure, or magnetic field. The d-electron weak itinerant ferromagnet ZrZn2, on the other hand, was recently found to display superconductivity in coexistence with ferromagnetism.  相似文献   

14.
Effects of chemical substitution in CeRu2Si2, a well-studied heavy fermion system and YbPd2Si2 have been investigated through magnetic susceptibility and x-ray diffraction in the systems CeRu x Si2, CeRu2−x Os x Si2, CeRu2Si2−x Ge x and YbPd2Si2−x Ge x . Replacing silicon by germanium generates normal chemical pressure effect, namely, Ce and Yb atoms in CeRu2Si2 and YbPd2Si2 became more and less magnetic respectively. With increasing Ge concentration, CeRu2Si2−x Ge x exhibits larger susceptibility at low temperature, goes to an antiferromagnetic state and finally becomes ferromagnetic. In YbPd2Si2−x Ge x , increasing Ge concentration drives Yb atoms to more divalent state. Electronic effects are more pronounced in CeRu2−x Os x Si2 though CeRu2Si2 and CeOs2Si2 have very nearly the same lattice parameters. It is conjectured that CeRu2Si2−x Ge x may be the first Ce-based heavy fermion having a magnetic ground state. The authors felicitate Prof. D S Kothari on his eightieth birthday and dedicate this paper to him on this occasion.  相似文献   

15.
Susceptibility, specific heat and resistivity studies on CePd2Si2 and its pseudoternary system CexLa1–xPd2Si2 are reported. Replacement of Ce by La leads to a near dilution like decrease of the Néel temperaturesT N (x): long range magnetic order in the ground state doublet exists in the wholex range explored (0.2x1). The present data indicate a concomitant Kondo effect, with Kondo temperaturesT K decreasing linearly from 9 to 3 K, competing with the magnetic interaction. A close relationship between the value of the specific heat jump atT N and the ratio between the two characteristic temperaturesT N andT K is demonstrated.  相似文献   

16.
We report on a detailed comparison of the thermodynamic properties of the heavy-fermion system CeCu6 which can be described as a Fermi liquid at low temperatures T < 0.1 K, and CeCu5.9Au0.1 where strong deviations from the Fermi-liquid behaviour were found previously in the T dependence of the specific heat C, magnetization M and electrical resistivity p. The specific heat, magnetization and elastic constants are investigated in a large range of magnetic fields, corroborating the idea that the non-Fermi-liquid behaviour arises from low-lying spin excitations. For the elastic constants, a striking linear T dependence is found for CeCu5.9Au0.1 in contrast to the T2 Fermi-liquid behaviour of CeCu6.  相似文献   

17.
Recent investigation on Si solar cells demonstrated the utility of Auger generation for the creation of more than merely one electron/hole pair per absorbed photon. The semiconductor Si requires a minimum photon energy of about 3.4 eV for this internal carrier multiplication. The current of a Si cell is therefore not significantly increased by Auger generation when the cell is illuminated by an air mass 1.5 spectrum, which contains only few photons with energies above 3.4 eV. Use of Si1–x Ge x alloys promises a lower onset energy. Unfortunately, incomplete data on band structures ofrandom Si1–x Ge x alloys preclude a detailed quantitative discussion of the full potential for these materials. Nevertheless, (i) analogies to our own quantum efficiency data from pure Si, (ii) the calculated band structure of the hypothetical,ordered zincblende type Si0.5Ge0.5 crystal, and (iii) optical data for Si1–x Ge x alloys indicate an optimum Ge content ofx=0.6 tox=0.7.  相似文献   

18.
The compound, CePt2Ge2, recently reported to crystallize in a monoclinic modification of the CaBe2Ge2 structure, has been identified to be an antiferromagnetic Kondo lattice (T N =2.2 K). The influence of positive and negative chemical pressure on the Kondo behavior is investigated by measurements of magnetic susceptibility and electrical resistivity () on the solid solutions, Ce1–x La x Pt2Ge2 and Ce1–z Y z Pt2Ge2. Y and La substituents cause nearly similar effects on the magnetic and electrical resistivity behaviour of CePt2Ge2, though the unit-cell volumes vary in opposite directions. We propose that the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction may contribute to decide the temperature at which attains a maximum at low temperatures (5 K) in CePt2Ge2.  相似文献   

19.
We investigated the generic phase diagram of the electron doped superconductor, Nd2−xCexCuO4, using films prepared by metal organic decomposition. After careful oxygen reduction treatment to remove interstitial Oap atoms, we found that the Tc increases monotonically from 24 K to 29 K with decreasing x from 0.15 to 0.00, demonstrating a quite different phase diagram from the previous bulk one. The implication of our results is discussed on the basis of tremendous influence of Oap “impurities” on superconductivity and also magnetism in T′ cuprates. Then we conclude that our result represents the generic phase diagram for oxygen-stoichiometric Nd2−xCexCuO4.  相似文献   

20.
This study follows up our previous investigation of the valence band (VB) intersubband emission from quantum cascade structures grown lattice matched on Si substrates. Here, Si/Si1−xGex (x=80%) heterostructures are investigated which are deposited by MBE on a virtual substrate of relaxed SiGe containing 50% of Ge. TEM analysis reveal flat and abrupt interfaces for structures grown at temperatures Tgrowth≈300°C. Intersubband absorption and photoluminescence emission manifest well-defined interfaces and good material quality. The observed intersubband line positions are found to be in good agreement with k·p model calculations for the VB. This is in contrast to the observed type II no phonons recombination which is found at consistently lower energy than expected. Finally, electrically excited intersubband emission from a strain compensated cascade structure containing three periods is presented.  相似文献   

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