AlGaN-based high-performance metal–semiconductor–metal photodetectors

Design, structure growth, fabrication, and characterization of high performance AlGaN-based metal–semiconductor–metal (MSM) photodetectors (PD) are reported. By incorporating AlN nucleation and buffer layers, the leakage current density of GaN MSM PD was reduced to 1.96 × 10⁻¹⁰ A/cm² at a 50 V bias, which is four orders of magnitude lower compared to control devices. A 229 nm cut-off wavelength, a peak responsivity of 0.53 A/W at 222 nm, and seven orders of magnitude visible rejection was obtained from Al_0.75Ga_0.25N MSM PD. Two-color monolithic AlGaN MSM PD with excellent dark current characteristics were demonstrated, where both detectors reject the other detector spectral band with more than three orders of magnitude. High-speed measurements of Al_0.38Ga_0.62N MSM PD resulted in fast responses with greater than gigahertz bandwidths, where the fastest devices had a 3-dB bandwidth of 5.4 GHz.     

高性能SOI基GePIN波导光电探测器的制备及特性研究

本文报道了在SOI衬底上外延高质量单晶Ge薄膜并制备高性能不同尺寸Ge PIN波导光电探测器.通过采用原子力显微镜、X射线衍射、拉曼散射光谱表征外延Ge薄膜的表面形貌、晶体质量以及应变参数,结果显示外延Ge薄膜中存在约0.2%左右的张应变,且表面平整,粗糙度为1.12 nm.此外,通过暗电流、光响应度以及3 dB带宽的测试来研究波导探测器的性能,结果表明尺寸为4μm×20μm波导探测器在-1 V的反向偏压下暗电流密度低至75 mA/cm~2,在1.55μm波长处的响应度为0.58 A/W,在-2 V的反向偏压下的3 dB带宽为5.5 GHz.     

硅基1.55 μm可调谐共振腔窄带光电探测器的研究

制作了一种低成本硅基1.55 μm可调谐共振腔增强型探测器.首次获得硅基长波长可调谐共振腔探测器的窄带响应,共振峰量子效率达44％,峰值半高宽为12.5nm,调谐范围14.5nm,并且获得1.8 GHz的高频响应.本制作工艺不复杂,成本低,有望用于工业生产.     

Electrical,optical and spectral characteristics of type-II ZnSe/ZnTe/GaAs superlattice and MSM-photodetector on their base

We report on growth, fabrication and characterization of the metal–semiconductor–metal (MSM) photodiode based on type-II ZnSe/ZnTe heterostructure. Heterostructure was grown on semi-insulating GaAs substrates by MOVPE. For the first time we present the results of experimental investigations of the MSM photodetector on the base of type-II ZnSe/ZnTe superlattice. The MSM-photodetector demonstrates very low dark current, high current sensitivity and external quantum efficiency. The maximum photoresponse of the MSM-detector at the wavelength 620 nm corresponds to current sensitivity 0.22 A/W and external quantum efficiency 44%. Photoresponse of the MSM-detector shows two peaks of response located at 620 nm and 870 nm. ZnSe/ZnTe type-II superlattice structure reduces the MSM-diode dark current significantly. For the MSM-diode with finger width and gap of 3 µm and 100?×?100 µm² photosensitive area we have obtained dark current density 10^?8 A/cm² at room temperature.     

Simulation of the Metal-Semiconductor-Metal photodetector based on InGaAs for the photodetection at the wavelength 1.55 μm

In this paper we present the simulation of Metal-Semiconductor-Metal photodetector (MSM-PD) of interdigitated planar structure based on InAlAs/InGaAs adapted for photodetection at the wavelength 1.55 μm. We use the theoretical models to plot the variations of the dark current, the photocurrent, the capacity, and the cut-off frequency of the photodetector as a function of bias voltage and the interelectrode distance. The obtained results show a very low dark current, mainly due to the introduction of a thin layer to increase the Schottky barrier based on In_0.52Al_0.48As in the epitaxial structure of component. The obtained photocurrent and cut-off frequencies are very appreciable, these latter are mainly limited by the transit time of the photo-generated carriers given the low component capacity obtained by simulation.     

掺铁InP肖特基势垒增强InGaAs MSM光电探测器

采用ＬＰ－ＭＯＶＰＥ方法及常规器件工艺制成了ＩｎＰ：Ｆｅ肖特基势垒增强ＩｎＧａＡｓＭＳＭ光电探测器。用自建测试系统对其直流和瞬态特性进行了测试，测试结果表明，器件的击穿电压大于１０Ｖ，２Ｖ偏压下暗电流为１７０ｎＡ，对应的暗电流密度约为３ｍＡ／ｃｍ２；瞬态响应中上升时间ｔｒ为２１ｐｓ，半高宽ＦＷＨＭ为７５ｐｓ。     

掺铁InP肖特基势垒增强InGaAs MSM光电探测器

采用LP-MOVPE方法及常规器件工艺制成了InP:Fe肖特基势垒增强InGaAsMSM光电探测器。用自建测试系统对其直流和瞬态特性进行了测试,测试结果表明,器件的击穿电压大于10V,2V偏压下暗电流为170nA,对应的暗电流密度约为3mA/cm²;瞬态响应中上升时间tr为21ps,半高宽FWHM为75ps.     

Novel miniature high power ring filter

The power handling capability of high temperature superconducting (HTS) filters is limited due to current concentration at the edges of the superconducting films. This problem can be overcome by using ring resonator, which employs the edge current free and reduces the current concentration. However, this kind of filter has large size. In order to reduce the cost and size and increase the power handling capability, in this paper a HTS photonic bandgap (PBG) structure filter is developed. The proposed pass band filter with PBG structure exhibits center frequency 12.23 GHz, steepness (about 35 dB/GHz), bandwidth (−3 dB bandwidth is 0.045 GHz), and low insertion loss (about −0.5 dB), and can handle input power up to 1 W (this value was limited by the measurement instrument used in the experiment). The size is reduced by 25%, insertion loss reduced by 37.5%, and steeper roll-off of the filter is also obtained compared with that in published literature.     

Hybrid Integration of 1 × 12 Metal-Semiconductor-Metal Photodetector and Polyimide Waveguide Array

We report here a demonstration of hybrid integration of a 1 × 12 metal-semiconductor-metal (MSM) photodetector array and polyimide channel waveguides via 45° total-internal-reflection (TIR) micro-couplers. The two-layer polyimide waveguide array was constructed using Ultradel 9120D for the core and Ultradel 9020 for the lower cladding layer. The coupling loss and propagation loss of the waveguide are 0.2dB and 0.21 dB/cm, respectively. The cross talk of the adjacent channels is -32 dB. The MSM photodetector array was fabricated on a semi-insulated GaAs wafer. The photodetectors are integrated to operate in the conventional vertical illumination mode. We measured the external quantum-efficiency and 3 dB bandwidth of the integrated MSM photodetectors at 0.4 A/W and 2.648 GHz, respectively. The aggregate 3 dB bandwidth of the 12-channel integrated system is 32 GHz.     

High efficiency, phase-locked operation of the harmonic-multiplyinginverted gyrotwystron oscillator

The inverted gyrotwystron (phigtron) is a millimeter wave frequency-doubling amplifier that has been demonstrated to produce over 300 kW peak power at twice the input frequency (centered at f_in =16.85 GHz and f_out=33.7 GHz) over a 0.5% bandwidth with a saturated gain of 30 dB and efficiency greater than 35%. The device has also been studied both theoretically and experimentally in a different operating regime where frequency-doubled, phase-locked oscillation is possible. A signal, injected via a fundamental gyro-traveling wave tube input section, modulated a 55 kV, 10 A electron beam. After transit through a drift section, the prebunched electron beam produced phase-locked, second harmonic oscillations in a TE₀₃ mode output cavity. RF output centered at either of two frequencies, 34.42 and 34.62 GHz, with a maximum output power of 180 kW, an efficiency of 32% and a locked signal gain of 35 dB was measured. A theoretical prediction of locking bandwidth, a design overview, and the experimental results are presented followed by a summary and discussion of the results     

分布损耗加载回旋行波管多模稳态注波互作用理论与比较证实

基于目前国际上实验研究的均匀介质加载和周期介质加载结构,建立了一种分布式损耗加载回旋行波管(gyro-TWT)多模稳态注波互作用理论.利用这一理论,以TE01模式基波gyro-TWT注波互作用为例,将Ka和W波段的理论结果与实验和软件仿真进行比较,以证实理论的合理性.     

采用Al/TaN叠层电极提高Si基Ge PIN光电探测器的性能

金属与Ge材料接触由于存在强烈的费米钉扎效应, 导致金属电极与n型Ge接触引入较大的接触电阻, 限制了Si基Ge探测器响应带宽. 本文报道了在SOI衬底上外延Ge单晶薄膜并制备了不同台面尺度的Ge PIN光电探测器. 对比了电极分别为金属Al和Al/TaN叠层的具有相同器件结构的SOI基Ge PIN光电探测器的暗电流、响应度以及响应带宽等参数. 发现在Al与Ge之间增加一薄层TaN可有效减小n型Ge的接触电阻, 将台面直径为24 μ的探测器在1.55 μ的波 长和-1 V偏压下的3 dB响应带宽提高了4倍. 同时, 器件暗电流减小一个数量级, 而响应度提高了2倍. 结果表明, 采用TaN薄层制作金属与Ge接触电极, 可有效钝化金属与Ge界面, 减轻费米钉扎效应, 降低金属与n-Ge接触的势垒高度, 因而减小接触电阻和界面复合电流, 提高探测器的光电性能.     

InGaAs-MSM光电探测器设计与仿真研究

对基于InGaAs材料体系的金属 半导体 金属（metal semiconductor metal,MSM）光电探测器进行设计,并对其暗电流、光电流、电容以及截止频率等性能参数进行仿真。通过添加InAlAs肖特基势垒增强层,将探测器的暗电流减小到了pA量级。仿真结果表明,探测器在光照下有明显的光响应,通过合理设计器件结构,探测器的工作频率可以达到1.5 THz。制备了探测器样品,并对其暗电流和光响应进行了测试,测试结果与仿真结果基本吻合。     

超低压选择区域生长法制备产生10GHz重复率超短光脉冲的级联电吸收调制器与分布反馈激光器单片集成光源

采用超低压(22×１０^２Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了InGaAsP/InGaAsP 级联电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distributed feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明，采用该技术制备的器件 关键词： 超低压 选择区域生长 集成光电子器件 超短光脉冲     

220 GHz 折叠波导慢波结构

 优化设计了一种220 GHz的折叠波导慢波结构的尺寸,对其冷测特性如色散、耦合阻抗和衰减进行了分析。理论分析和软件仿真结果表明设计的折叠波导慢波结构在中心频率处具有较平缓的色散关系,较高的耦合阻抗和较低的电路衰减。互作用模拟表明,在电子注电压为20 kV,电流为10 mA时,27 mm（50个周期）的折叠波导慢波结构在220 GHz具有14.5 dB的增益,3 dB带宽为16.3 GHz（211.9～228.2 GHz）。     

Integrated MQW intermixed InGaAsP/InP waveguide photodiodes

A multi-wavelength Quantum well (QW) waveguide photodiode (PD) have been designed for Coarse Wavelength Division Multiplexing (CWDM) systems in which spatial tailoring of the bandgap with post growth F implanted QW intermixing of InGaAsP/InP multi QWs for the integration have been considered. Two separate structures with different composition but same well widths are necessary to detect all CWDM wavelengths. For In_0.5995Ga_0.4005As_0.8521P_0.1479 well there is a 12 channel coverage from 1,270 to 1,490 nm and for the In_0.5540Ga_0.4460As_0.9489P_0.0511 well the 14 channel spans from 1,350 to 1,610 nm. A carrier tunneling time of 20 ps along with the transit time limited bandwidth of 86 GHz gives a 3 dB bandwidth of 41 GHz by optimizing the i-MQW thickness and dopant concentration of the different layers of the waveguide. A maximum efficiency of 22% with insertion loss of 0.4–23 dB has been obtained.     

A 3D-CMOS compatible silicon photo-sensor with a large vertical photosensitive area

This paper introduces design and simulation of a three-dimensional complementary metal–oxide–semiconductor CMOS compatible photo-sensor based on a silicon substrate. In the structure of photo-sensor, a vertical n+/p junction as a photosensitive area is formed on one side of a U-groove, and perpendicular to a lateral n-i-p structure on top-side of the silicon surface. This configuration enables a direct butt-coupling of a fiber-optic to the photosensitive area, which is a privilege for many remote monitoring applications. The device analysis is carried out by a two-dimensional simulation using SILVACO TCAD simulator. The thickness of the photo-sensitive area is investigated by considering the figures of merit for the two different thicknesses of 30 and 50 µm. The simulated results (according to the parameters defined for the Si substrate) show a very low dark current of 70 and 100 (fA/μm) for the 30 and 50 µm thicknesses, respectively. In addition, a high photo-current to dark current ratio of ~3000 is achieved under an intensity of 2 mW/cm² at 633 nm wavelength, according to the wavelength of red He–Ne laser. The sensor demonstrates a responsivity of 0.33 A/W corresponding to 65% external quantum efficiency and a ?3 dB frequency response of 0.2 GHz under a small signal of 2 mW/cm² at 633 nm wavelength for 10 V reverse bias.     

A strained InAIAs/InGaAs superlattice avalanche photodiode with a waveguide structure for low bias-voltage operation

An InAIAs/InGaAs superlattice (SL) multiplication layer operating at an IC-power supply voltage was realized by introducing strain into the SL. Using this SL as an absorption and multiplication layer, edge-coupled InAIAs/InGaAs SL avalanche photodiodes with waveguide structures were demonstrated. An avalanche multiplication factor larger than 10 was achieved at a bias voltage of less than 7V. A wide 3 dB bandwidth of 8 GHz was obtained at a multiplication factor of 3 and a wavelength of 1.3 m.     

Mixing of 28 THz (10.7 μm) CO2-laser radiation by nanometer thin-film NiNiONi diodes with difference frequencies up to 176 GHz

Difference frequencies up to 176 GHz between CO₂-laser transitions at 28 THz (10.7 μm) are generated by thin-film nanometer-scale Ni---NiO---Ni diodes (MOM, MIM) with integrated bow-tie antennas and rhodium waveguides. A signal-to-noise (S/N) ratio of 47 dB was measured for a 58.7 GHz difference frequency and a 100 kHz bandwidth, while a S/N ratio of 14 dB was observed for a 176.2 GHz difference frequency and a 300 kHz bandwidth. The frequencies reported are considerably higher than those reported previously for thin-film diodes. The comparison of the mixing signals for the antenna parallel and perpendicular to the E-polarization of the infrared radiation yields a ratio of over 34 dB. These results imply the extension of millimeter-wave techniques to the infrared.     

G波段扩展互作用速调管宽带注波互作用系统研究

扩展互作用速调管采用多间隙分布作用谐振腔和全金属平面结构,互作用电路短、单位长度增益高,其平面化结构特征与现代微加工工艺相兼容,已成为发展太赫兹高功率源的研究热点,进一步展宽扩展互作用速调管放大器的带宽成为拓展其应用的关键技术问题。设计了一种G波段5腔多间隙注波互作用电路,采用参差调谐技术扩展群聚段带宽和滤波器加载技术扩展输出段带宽,通过CST软件对结构参数优化和输出特性模拟仿真,结果表明:在电子注电压19 kV,电流300 mA,输入功率120 mW时,获得输出功率222 W,电子效率3.89%,增益32.67 dB,3 dB瞬时带宽达到了1.5 GHz。