通过对(1-x)(K0.5Na0.5)NbO3-xSrTiO3(0≤x≤0.15)陶瓷的相组成、晶体结构和介电性能的研究发现,该陶瓷为单一的钙钛矿结构相.当x含量较小(x＜0.1)时为正交相结构,x≥0.1时转变为四方相结构.随着SrTiO3掺杂量的增加,样品的致密度增加,样品由正常铁电相逐渐向弥散铁电相转变,且相变温度明显下降,其相变峰的半高宽D和临界指数γ,随 x 的增加而增加.样品损耗ε″r(复介电常数虚部)随温度T的变化表明低温时弛豫极化损耗起主要作用,高温时漏导损耗起主要作用.同时介电常数实部ε′r随频率的变化显示(1-x)(K0.5Na0.5)NbO3-xSrTiO3弛豫为德拜弛豫. 相似文献
The applied magnetic field can result in evident changes on the charge-ordering transitions in both Cu-based high Tc superconductors and Mn-based colossal magnetioresistance materials.Alternations of charge modulation and melting of well-defined charge stripes can be commonly observed when the magnetic field is over 2T.We herein present the experimental data obtained in LaCuO4.08 and Pro0.5Sr0.5MnO3 materials,illustrating this kind of interesting phenomena at low temperatures.In particular,some essential structural features alternating along with charge-ordering transition have been discussed. 相似文献
Thin films of perovskite manganite, with nominal composition La0.5Ca0.5MnO3, have been prepared by pulsed laser deposition on (1 0 0) SrTiO3, (1 0 0) LaAlO3, (1 0 0) Si and YSZ/CeO2-buffered (1 0 0) Si substrates. Structural and electrical characterisation was performed on the films. The magneto-transport properties of all the thin films depart from the bulk behaviour. The LCMO film grown on buffered Si shows an insulator–metallic transition around 130–150 K while the one deposited directly on Si displayed a similar behaviour under a melting field of 1 T. However, that transition is absent in the films grown on LAO and STO. We suggest that appropriate stress values induced by the substrate favour the formation of metallic percolative paths. 相似文献
The dielectric loss tanδ of half-doped manganite La 0.5 Ca 0.5 MnO 3 is investigated using Green's function technique. The La 0.5 Ca 0.5 MnO 3 is described by the Kondo-lattice model in the double exchange limit, taking into account the Jahn-Teller distortion and the super-exchange interaction between the localized electrons. It is found that the intensity of tanδ decreases with increasing | ε JT |, V, and U. It is also observed that the transition temperature T P rises as | ε JT | and U increase. It is worth noting that T P remains unchanged and the strength of tanδ increases with increasing g. The calculated dielectric loss results are explained theoretically, and these behaviors are in qualitative agreement with the experimental results. 相似文献
The ablation process of La0.5Sr0.5CoO3 by a spatial uniform 248 nm excimer laser beam has been characterized. Ablation rates, changes in the target surface morphology and composition have been studied as a function of the laser fluence. The dependence of the ablation rate on the laser fluence has been explained by a model based on plasma absorption. The threshold fluence for complete dissociation of the surface has been determined and is found equal to 0.7 J/cm2. Above this threshold, a steady-state target surface condition is obtained within 30 pulses. Below the threshold fluence, CoO nuclei form, which have a pronounced effect on the target composition and morphology. In addition, ellipsometric and reflectance spectra have been measured in the photon energy range of 1.8 to 5.0 eV. 相似文献
Ultrafast transverse thermoelectric voltage response has been observed in c‐axis inclined epitaxial La0.5Sr0.5CoO3thin films. Voltage signals with the rise time of 7 ns have been detected under the irradiation of pulse laser with duration of 28 ns. A concept, named response rate ratio, has been proposed to evaluate the intrinsic response rate, and this ratio in La0.5Sr0.5CoO3is smaller than that in other reported materials. The low resistivity is thought to be responsible for the ultrafast response, as low resistivity induces small optical penetration depth, and response time has a monotonous increasing relationship with this depth.
Study of structural properties of (Ba0.5Sr0.5)PbO3 has been carried out in a wide temperature range from 10 to 1223 K using the X-ray powder diffraction technique. Two temperature-induced structural phase transitions at 948 and 1198 K have been found. For polycrystallines the XPS and electrical resistivity measurements have been performed. 相似文献
