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 共查询到19条相似文献,搜索用时 62 毫秒
1.
利用同步辐射X射线衍射技术 ,对La0 .3Bi0 .2 Ca0 .5MnO3 中存在的Jahn Teller畸变进行了原位的高压研究。实验表明 ,外加压力能有效地影响到晶格中Mn—O键长和Mn—O—Mn键角的变化。当压力为 1.8GPa时 ,在晶格中存在的两种不同畸变模式之间的相互作用下 ,导致了位于a b基面上的Q2 畸变模式的消失  相似文献   

2.
A new stacking method via variation ofsubstrate temperature in rfmagnetron sputter is used to fabricate polycrystalline/polycrystalline Ba0.5Sr0.5TiO3 thin films with higher dielectric constant, higher breakdown strength and lower leakage current densities than those prepared by a conventionM deposition method. The improved figure of merit G (ε0εrEb) of the Ba0.5Sr0.5TiO3 thin films implies that they are a feasible insulation layer for thin film electroluminescent devices.  相似文献   

3.
4.
红色荧光粉MMoO4:Eu3+ (M=Ca,Sr,Ba)的水热合成及光谱性质   总被引:2,自引:0,他引:2  
采用水热合成法制备了红色荧光粉MMoO4:Eu3+ (M=Ca,Sr,Ba),用XRD、SEM、荧光激发和发射光谱对其物相、形貌以及发光性能进行表征和研究.结果表明,在800℃时可得到MMoO4(M=Ca,Sr,Ba)物相结构,荧光粉粒径小且粒度分布均匀.分别以395 nm的近紫外光和465 nm的蓝光激发样品,MMoO4:Eu3+(M=Ca,Sr,Ba)荧光粉发红光,对应于Eu3+的4f-4f跃迁,其中以616nm发光最强.荧光粉在395nm和465nm的吸收分别与紫外光和蓝光LED芯片的发射相匹配.  相似文献   

5.
采用水热合成法制备了红色荧光粉MMoO4:Eu3+ (M=Ca,Sr,Ba),用XRD、SEM、荧光激发和发射光谱对其物相、形貌以及发光性能进行表征和研究.结果表明,在800℃时可得到MMoO4(M=Ca,Sr,Ba)物相结构,荧光粉粒径小且粒度分布均匀.分别以395 nm的近紫外光和465 nm的蓝光激发样品,MMo...  相似文献   

6.
采用固相法制备了红色LiM(M=Ca,Sr,Ba)BO3∶Re3+(Re=Eu,Sm)发光材料,研究了材料的发光性能。研究发现LiM(M=Ca,Sr,Ba)BO3∶Eu3+材料呈现多峰发射,最强发射分别位于610,615,613 nm处,分别监测这三个最强峰,所得激发光谱峰值位于369,400,470 nm。LiM(M=Ca,Sr,Ba)BO3∶Sm3+材料也呈多峰发射,分别对应Sm3+的4G5/2→6H5/2、4G5/2→6H7/2和4G5/2→6H9/2跃迁发射;分别监测602,599,597 nm三个最强发射峰,所得激发光谱峰值位于374,405 nm。研究了激活剂浓度对材料发射强度的影响,结果随激活剂浓度的增大,发射强度先增强后减弱,即,存在浓度猝灭效应。实验表明,加入电荷补偿剂Li+、Na+或K+均可提高LiM(M=Ca,Sr,Ba)BO3∶Re3+(Re=Eu,Sm)材料的发射强度。  相似文献   

7.
M2CeO4(M=Ca,Sr,Ba)的结构与发光特性   总被引:6,自引:0,他引:6  
洪广言  张雷  孙小琳 《发光学报》2002,23(4):381-384
SSr2CeO4是一种新型的一维结构发光材料,其特殊的结构对其发光特性有决定性的作用。Sr2CeO4体系中可以顺利地进行能量传递,产生较强电荷迁移发光。合成了M2CeO4(M=Ca,Sr,Ba),发现与Sr2CeO4具有类似结构的Ba2CeO4也可以发光,而结构完全发生了变化的Ca2CeO4则不发光。  相似文献   

8.
The applied magnetic field can result in evident changes on the charge-ordering transitions in both Cu-based high Tc superconductors and Mn-based colossal magnetioresistance materials.Alternations of charge modulation and melting of well-defined charge stripes can be commonly observed when the magnetic field is over 2T.We herein present the experimental data obtained in LaCuO4.08 and Pro0.5Sr0.5MnO3 materials,illustrating this kind of interesting phenomena at low temperatures.In particular,some essential structural features alternating along with charge-ordering transition have been discussed.  相似文献   

9.
从第一性原理出发,利用密度泛函理论体系下的广义梯度近似,研究了Ba0.5Ca0.5ZrO3的电子结构和光学性质.计算得到该晶体的晶格常数为4.1823 A,且此材料是一种间隙的半导体材料,价带和导带都来源于Ba原子、Ca原子、Zr原子的d态和O原子的p态电子间的杂化.吸收系数为105 cm-1量级,且吸收主要集中在低能区.静态折射率为1.79,能量损失峰出现在10.8 eV处.该研究结果为Ba0.5Ca0.5ZrO3光电材料的设计和应用提供了理论依据.  相似文献   

10.
马玉彬 《物理学报》2009,58(7):4976-4979
研究了氧空位对La0.5Ca0.5MnO3 (LCMO)多晶块材的电输运和磁性质的影响. 随着氧空位的增加, 样品在高温段的电阻率一直增加, 并满足绝热小极化子模型, 而低温段的电阻率先下降后上升, 并出现明显的dR/dT>0的行为, 直至最后变为绝缘的. 氧空位的增加抑止了反铁磁相的出现, 使得脱氧的LCMO样品不发生反铁磁转变, 进一步增加氧空位则会抑制铁磁相. 关键词: 0.5Ca0.5MnO3')" href="#">La0.5Ca0.5MnO3 反铁磁相变 铁磁相变 脱氧  相似文献   

11.
Study of structural properties of (Ba0.5Sr0.5)PbO3 has been carried out in a wide temperature range from 10 to 1223 K using the X-ray powder diffraction technique. Two temperature-induced structural phase transitions at 948 and 1198 K have been found. For polycrystallines the XPS and electrical resistivity measurements have been performed.  相似文献   

12.
曹先胜  吉高峰  罗炳成  李峰 《中国物理 B》2013,22(8):87702-087702
The dielectric loss tanδ of half-doped manganite La 0.5 Ca 0.5 MnO 3 is investigated using Green's function technique. The La 0.5 Ca 0.5 MnO 3 is described by the Kondo-lattice model in the double exchange limit, taking into account the Jahn-Teller distortion and the super-exchange interaction between the localized electrons. It is found that the intensity of tanδ decreases with increasing | ε JT |, V, and U. It is also observed that the transition temperature T P rises as | ε JT | and U increase. It is worth noting that T P remains unchanged and the strength of tanδ increases with increasing g. The calculated dielectric loss results are explained theoretically, and these behaviors are in qualitative agreement with the experimental results.  相似文献   

13.
La_(2/3)Sr_(1/3)MnO_3 films are deposited on(001) silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger(14.3% for acid-etched,and 42.9% for alkali-etched) than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.  相似文献   

14.
采用固相法制备了绿色LiM(M=Ca,Sr,Ba)BO3:Tb3+发光材料.测量结果显示材料均可被紫外(350~410 nm)光激发,发射绿光.研究了Tb3+浓度对材料发射光谱的影响,结果显示,随Tb3+浓度的增大,发射光谱峰位未发生变化,但其强度呈现出先增大后减小的趋势,即:存在浓度猝灭效应.加入电荷补偿剂Li+,Na+和K+提高了LiM(M=Ca,Sr,Ba)BO3:Tb抖材料的发射强度.  相似文献   

15.
采用固相法制备了LiM(M=Ca, Sr, Ba)BO3 : Dy3+材料,并研究了材料的发光特性。LiM(M=Ca, Sr, Ba)BO3 : Dy3+材料的发射光谱均呈多峰发射,对应于Ca,Sr,Ba,其主发射峰分别是Dy3+4F9/26H15/2(484,486,486 nm),6H13/2(577,578,578 nm)和6H11/2(668,668,666 nm)跃迁。监测黄色发射峰时,所得激发光 谱峰值位置相同,主激发峰分别为331,368, 397,433,462,478 nm,对应Dy3+6H15/24D7/2,6P7/2,6M21/2,4G11/2,4I15/26F9/2跃迁。研究了敏化剂Ce3+及电荷补偿剂Li+、Na+和K+对LiM(M=Ca, Sr, Ba)BO3 : Dy3+材料发光强度的影响。结果显示:加入敏化剂Ce3+提高了材料的发光强度,发光强度最大处对应的Ce3+浓度为3%;加入电荷补偿剂Li+、Na+和K+后,材料的发光强度也得到了明显提高,但发光强度最大处对应的Li+、Na+和K+浓度不同,依次为4%、4%和3%。  相似文献   

16.
红色LiMBO3 : Re3+(Re=Eu,Sm) 发光材料的特性   总被引:1,自引:1,他引:1       下载免费PDF全文
采用固相法制备了红色LiM(M=Ca, Sr, Ba)BO3 : Re3+(Re=Eu, Sm)发光材料,研究了材料的发光性能。研究发现LiM(M=Ca, Sr, Ba)BO3 : Eu3+材料呈现多峰发射,最强发射分别位于610,615,613 nm处,分别监测这三个最强峰,所得激发光谱峰值位于369,400,470 nm。LiM(M=Ca, Sr, Ba)BO3 : Sm3+材料也呈多峰发射,分别对应Sm3+4G5/26H5/24G5/26H7/24G5/26H9/2跃迁发射;分别监测602,599,597 nm三个最强发射峰,所得激发光谱峰值位于374,405 nm。研究了激活剂浓度对材料发射强度的影响,结果随激活剂浓度的增大,发射强度先增强后减弱,即,存在浓度猝灭效应。实验表明,加入电荷补偿剂Li+、Na+或K+均可提高LiM(M=Ca, Sr, Ba)BO3 : Re3+(Re=Eu, Sm)材料的发射强度。  相似文献   

17.
We present the structural, magnetic and electrical properties of some manganese oxides such as Ln0.5M0.5MnO3 (Ln = La, Pr and M = Ca, Sr, Ba) in which the average ionic radius <rA> of the A site cation is varied while keeping the Mn3+/Mn4+ ratio fixed to 1. All the studied samples have a perovskite structure with rhombohedral or orthorhombic distortion. This distortion was related to the A cation size. The lattice volume increases lineraly with ( r A) in all the range 1.179–1.3264 Å. The magnetic investigation shows that the magnetic transition temperature T t, and magnetisation saturation M s have similar behaviour by increasing and decreasing with (r A). The electrical measurements show conduction by small polarons attributed to a large canting angle 9 in all the range 4–300 K in the two ferromagnetic compounds La0.5Sr0.5MnO3 and La0.5Sr0.5MnO3.  相似文献   

18.
The flexoelectric microcantilever offers an alternative approach for the development of micro/nano‐sensors. The transverse flexoelectric coefficients µ12 of barium strontium titanate microcantilevers were measured at room temperature, and found to keep the same value of 8.5 µC/m for microcantilevers with thickness ranging from 30 µm to 1.4 mm. The calculated effective piezoelectric coefficient and electrical energy density of flexoelectric cantilevers are superior to those of their piezoelectric counterparts, suggesting that the flexoelectricity‐induced polarization can be significantly increased as structures are scaled down due to the scaling effect of strain gradient, holding promise for flexoelectric micro/nano cantilever sensing applications. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

19.
通过sol-gel法在si(111)基片上分别制备了LaNiO3(LNO)底电极和LaNiO3/Sr0.7TiO3(LNO/LSTO)底电极.然后采用sol-gel方法,在两种衬底上分别制备了Pb(Zr0.5Ti0.5)O3(PZT)铁电薄膜.XRD分析表明,两种PZT薄膜均具有钙钛矿结构,且在LNO底电极上的PZT薄膜呈(100)择优取向,而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明,相对LNO衬底上制备的PZT薄膜,在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强,同时矫顽场也增大.介电常数和漏电流的测试表明,LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流.  相似文献   

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