环形光纤激光器中的半导体光波导调制器

对环形光纤激光器中的半导体光波导调制器进行了理论研究，结果表明，光纤环中的偏振控制器对光的偏振态的控制以及半导体光皮导对光的偏振态的调节构成了激光器的主要调制机理，为环形光纤激光器的自调Ｑ及锁模的新机制提供了理论依据。     

大功率半导体激光调制系统及内部调制特性

从半导体激光直接调制理论出发,对直接调制过程中影响半导体激光器高频调制性能的因素进行了研究;运用PSpice建立半导体激光器等效电路模型,仿真研究了电学寄生参数对半导体激光器调制特性的影响且提出了相应的提高其调制性能的方法。在研究半导体激光器调制特性的基础上,设计了一种半导体激光直接调制系统。运用OrCAD/PSpice对直接调制驱动系统进行仿真。研制的半导体激光调制系统实现了频率为1 MHz、平均功率为1.1 W的调制激光输出。     

半导体激光器光学系统设计

—、前言随着科学技术的发展,半导体激光器在光通信、光学高密度信息记录和重放、激光打印、光测量和光信号处理等方面得到日益广泛的应用。半导体激光器具有体积小、发光效率高、结构简单、可高速直接调制、调制频率高、可靠性能好、使用寿命长等特点,它被认为是最有发展前途的几种激光器之一。由于半导体激光器在垂直两个方向上     

基于注入半导体激光器的微波副载波相位调制信号产生

光载无线技术是解决终端超宽带无线通信的重要方法,光信号与微波/毫米波信号的融合处理技术在光-无线的数据格式转换中至关重要.提出了一种基于相位调制信号光注入Fabry-Perot型半导体激光器实现微波副载波相位调制信号产生的方法.光学注入半导体激光器的输出光场会产生一周期(P1)振荡效应, P1振荡产生的边带实现了相位调制信号光的调制分量的放大,被放大的调制分量与注入光载波在激光器腔内拍频形成微波副载波.注入光相位的变化导致新产生的微波副载波相位变化, 实现了注入信号光相位信息转化为微波副载波相位信息.本系统完成1.3 Gb/s, 2.7 Gb/s, 2 Gb/s光相位调制信号到微波副载波相位调制信号的转换,并测量了微波的单边带相位噪声. 通过光电转换和电域混频将还原出的光基带信号与原信号进行逻辑对比,证明了数据信息转换的正确性.     

重构-等效啁啾分布反馈半导体激光器的多信号直调特性

在测量与分析频率响应与动态范围的基础上,研究了重构-等效啁啾分布反馈半导体.直调激光器偏置电流以及调制信号的微波功率对直调结果的影响.将300Mb/s基带信号与1.562 5Gb/s超宽带信号同时直接加载到该激光器上,经过10km单模光纤传输后进行波形、频谱及误码率的检测,结果表明:基带信号与超宽带信号的功率代价分别为1.98dB与0.92dB;该激光器具有良好的多信号直接调制性能,在基于波分复用无源光网络的多业务融合网络中具有重要的应用前景.     

基于波长调制技术的激光器调制特性研究

在流场诊断技术中,可调谐半导体吸收光谱技术（TDLAS）成为主要的诊断技术之一,其可实现非接触、原位检测。波长调制（WMS）和直接吸收(DA)是两种最常用的TDLAS气体传感方法,在目标含量很低或者极端流场环境下,波长调制技术呈现出更多的优势,检测灵敏度与直接吸收相比可以提高1～2个数量级。在近红外波长调制技术应用领域,分布反馈式（DFB）半导体激光器成为流场诊断技术的光源选择之一,无论利用谐波信号（或者归一化谐波信号）的线型拟合,还是选择谐波信号的峰值来反演流场参数,吸收模型的准确建立均十分重要。在模型建立时,激光器频率-时间响应以及光强-时间响应的准确表示尤为重要。为解决吸收模型准确建立问题,提出了一种准确测量激光器调制参数的完整方法,通过实验测量了用于探测水汽吸收的1 392和1 469 nm激光器的调制特性,研究了分布反馈式激光器的调制参数随调制幅度,调制频率以及工作温度的变化。根据该方法得到的调制参数,建立吸收模型,测得常温下空气中水汽浓度为1.97%,直接吸收方法测得浓度为1.99%,验证了该测量方法的准确性。研究表明,调制深度随调制幅度的增加线性增加,随调制频率的增加非线性单调减小,随工作温度的升高线性增加;激光器的出光强度和频率同时被调制,强度变化超前频率变化的相位,随调制幅度的变化不明显,随调制频率的增加单调增加,随工作温度的升高单调减小;归一化一次谐波振幅和二次振幅均随调制幅度的增加而增加,随调制频率的增加而减小,随工作温度的变化不明显。在吸收光谱应用领域,波长调制技术发挥的作用愈加重要,调制系数与谐波信号的峰值息息相关,在波长调制技术应用时,选取适当的调制参数,有利于得到合适的谐波信号,可通过改变调制幅度、调制频率、工作温度得到最优调制系数。研究了近红外分布反馈式半导体激光器的调制特性,该方法同样适用于不同封装和不同波段激光器调制特性的研究,利于推广吸收光谱技术在各领域的应用。     

半导体激光器实现波长转换的理论模型分析

作为自动交换光网络中的核心器件，全光波长转换器的研究是目前的热点。提出了基于半导体激光器实现波长转换的理论模型，采用小信号分析方法，利用速率方程求解了波长转换的频率调制响应特性。并初步研究了不同半导体激光器工作电流、码速、输入信号光功率、增益吸收系数条件对波长转换性能的影响。这对于优化基于半导体激光器的全光波长转换器有一定的参考价值。     

1GHz梳状波调制1.3μmDFB半导体激光器皮秒超短光脉冲产生的实验研究

本文介绍一种采用高重复率梳状波电流调制1.3μm分布反馈(DFB)半导体激光器产生皮秒超短光脉冲的技术。采用1GHz重复率尖脉冲电流直接调制1.3μm半导体激光器产生了最短15ps、输出平均功率为4.5mW的超短光脉冲。     

直接扣除法测量半导体光放大器频率响应

在光电子器件散射参量定义的基础上建立了基于直接扣除法的半导体光放大器频率响应测量系统,测量中通过扣除激光器和探测器系统的频率响应,得到放大器固有的频率响应。对InGaAsP体材料行波腔半导体光放大器样品进行了测量,得到了放大器在不同注入光功率和不同偏置电流下的频率响应曲线。这些曲线很好地反应了半导体光放大器的增益饱和和噪声特性,进一步分析发现半导体光放大器对低频调制信号的放大能力弱于对高频信号的放大能力,分析认为其原因在于半导体光放大器的载流子寿命有限导致低频信号长时间消耗载流子时,载流子数量无法及时恢复,从而使得增益降低。     

双参考光半导体调频距离测量

利用半导体线性调频可以实现对距离的绝对测量，但半导体激光器的光频调制特性受环境温度变化的影响很大，限制了该方法的测量精度和稳定性，无法走出实验室。为了解决这一难题，本文提出一种采用双参考光的绝对测量方法。通过测量两个拍信号频率，消除了温度的影响，提高了测量精度。这种方法对促进距离绝对测量的实用化有重要的意义。     

Numerical study of converting beat-note signals of dual-frequency lasers to optical frequency combs by optical injection locking of semiconductor lasers

The optical injection locking of semiconductor lasers to dual-frequency lasers is studied by numerical simulations. The beat-note signals can be effectively transformed to optical frequency combs due to the effective four wave-mixing in the active semiconductor gain medium. The low-noise Gaussian-like pulse can be obtained by locking the relaxation oscillation and compensating the gain asymmetry. The simulations suggest that pulse trains of width below 30 ps and repetition rate in GHz frequency can be generated simply by the optical injection locking of semiconductor lasers. Since the optical injection locking can broaden the spectrum and amplify the optical power simultaneously, it can be a good initial stage for generating optical frequency combs from dual-frequency lasers by multi-stage of spectral broadening in nonlinear waveguides.     

基于V型腔光反馈法的半导体激光器线宽压窄和频率锁定初步研究

线宽压窄和频率锁定是提高激光器（特别是半导体激光器）性能的重要手段。在理论分析光反馈时的半导体激光器线宽压窄和频率锁定机理的基础上,建立了一套基于高品质V型光学谐振腔的半导体激光器线宽压窄实验系统,并利用该系统开展了初步实验研究。通过对比无有光反馈情况下的V型腔的透射光扫描线形,初步验证了V型腔用于半导体激光器线宽压窄和频率锁定的可行性,为后续研究奠定了基础。     

Carrier lifetime variation and its effects on the chaotic behaviors in semiconductor laser

Modeling theoretically the chaotic behaviors of semiconductor lasers, the carrier lifetime is usually treated as a constant (in this paper, it is called as the constant carrier lifetime assumption (CCLA)). In this paper, after considering the actually recombination mechanism of the carriers in the semiconductor, the variation of the carrier lifetime with the time has been obtained, and the chaotic characteristics of semiconductor laser with optical feedback have been investigated numerically. The obtained results have been compared with those obtained with CCLA, and the obvious differences can be observed.     

光注入下外光反馈半导体激光器输出自相关特性研究

基于半导体激光器(SL)受到外部扰动(光反馈和光注入)下的速率方程组,研究了反馈系数、延迟时间、注入强度和频率失谐对半导体激光器输出混沌信号自相关特性的影响.研究表明：上述四个参量对SL输出混沌信号的自相关函数曲线的半高全宽(FWHM)以及边峰抑制比都有影响;通过合理选择各参量,可以使SL输出的混沌信号具有尖锐的自相关函数曲线分布,其FWHM可降到0.02 ns,比已有相关报道提高了一个数量级. 关键词： 半导体激光器 光反馈 光注入 自相关函数     

条形DH半导体激光器高频调制光输出的频率锁定、准周期、分岔和混沌

本文从解光场方程和载流子浓度以及光子密度速率方程的自洽解出发,研究条形DH半导体激光器高频调制下光输出的频率锁定、准周期、分岔和混沌现象。结果表明,不稳定的条形半导体激光器可能出现混沌的光输出;其通向混沌的途径是准周期到混沌。所得结果与实验符合得很好,并澄清了当前理论中的混乱之处。     

ZnS Nanospheres for Optical Modulator in an Erbium-Doped Fiber Laser

Zinc sulfide (ZnS), which belongs to transition metal monochalcogenides, is a semiconductor material with wide direct band gap. It can potentially show some special applications (such as luminescence, phosphor, sensors, infrared window materials, photocatalysis) by changing the morphology, size, and crystal structure of semiconductor materials. However, ZnS nanospheres have not been studied as optical modulators until now. Herein, ZnS nanospheres are synthesized by the hydrothermal method and are used to realize optical modulators in an Er-doped fiber laser. The evanescent field effect is utilized to incorporate the ZnS nanospheres on a tapered fiber. Furthermore, with the increase in pump power, the modulation interval gradually decreases to a minimum of 34.36 ns corresponding to the modulation frequency of 29.1 MHz, which is the highest modulation frequency to our knowledge in a ring cavity all-fiber laser. These results demonstrate ZnS nanospheres together with the interaction of dispersion and nonlinearity in optical fibers can modulate the proposed lasers. This not only provides a new method for controlling the power and frequency of all optical modulators, but also marks an important step for ZnS materials in optics research and device applications.     

Scattering-parameter measurements of laser diodes

An accurate and simple technique for measuring the input reflection coefficient and the frequency response of semiconductor laser diode chips is proposed and demonstrated. All the packaging parasitics could be obtained accurately using a calibrated probe, and the impedance of the intrinsic diode chip is deduced from the directly measured reflection coefficient. The directly measured impedance of a laser diode is affected strongly by the short bond wire. In the frequency response (S ₂₁) measurements of semiconductor laser diode chips, the test fixture consists of a microwave probe, a submount, and a bond wire. The S-parameters of the probe could be determined using the short-open-match (SOM) method. Both the attenuation and the reflection of the test fixture have a strong influence on the directly measured frequency response, and in our proposed technique, the effect of test fixture is completely removed.     

Direct modulation and optical confinement factor modulation of semiconductor lasers

A method for modulation of semiconductor lasers is demonstrated. The method is based on the modulation of the optical confinement factor. Using this method an enhanced—3-dB bandwidth is observed in agreement with the small signal rate equation analysis. A modulation response that drops at high frequencies slower than the conventional direct current modulation response is achieved. This supports the theoretical predictions, showing an intrinsic 1/f decay rate for the optical confinement factor modulation scheme versus an intrinsic 1/f² decay for direct modulation.     

A method of tunable high repetition-rate picosecond optical pulse generation using injection locking of laser diodes

A method of tunable, high repetition-rate optical pulse generation by using optical injection locking of semiconductor lasers has been described in this paper. This method utilizes the superposition of five coherent optical carriers obtained from the spectrum of optical phase modulation, which results in a sharp optical pulse. Theoretical calculations indicate that a pulse width of 1 ps and a repetition rate of 200 GHz can be achieved for a modulator drive frequency of 40 GHz. PACS 42.79.Sz; 42.79.Hp; 42.79.-e; 42.62.-b; 85.60.-q