应用渐进因子分析法研究了SiO2／Si样品俄歇深度剖析

首次利用渐进因子分析法对ＳｉＯ２／Ｓｉ样品俄歇深度剖析过程进行研究，发现ＳｉＯ２／Ｓｉ界面处有ＳｉＯｘ成分存在，ｘ值在１．０～１．５之间，厚度约为３０ｎｍ，含量接近５０％，Ａｒ＾＋离子束的轰击使得ＳｉＯ２薄膜内分解产生亚稳态ＳｉＯ２含量在１７％左右，研究结果表明，渐进因子分析法非常适合于俄歇深度剖析的化学态分析。     

应用渐进因子分析法研究SiO_2/Si样品俄歇深度剖析

首次利用渐进因子分析法对ＳｉＯ２／Ｓｉ样品俄歇深度剖析过程进行研究，发现ＳｉＯ２／Ｓｉ界面处有ＳｉＯｘ成分存在，ｘ值在１０～１５之间，厚度约为３０ｎｍ，含量接近５０％。Ａｒ＋离子束的轰击使得ＳｉＯ２薄膜内分解产生亚稳态ＳｉＯ２，含量在１７％左右。研究结果表明，渐进因子分析法非常适合于俄歇深度剖析的化学态分析。     

添加钇提高不锈钢耐蚀性能的AES研究

用俄歇能谱仪对比研究了添加０．２％Ｙ对高硅不锈钢在９３％Ｈ２ＳＯ４介质中所形成的钝化膜中各元素浓度分布的影响，添加０．２％Ｙ增大了ＳｉＯ２在不锈钢钝化膜中的比例，从而使合金中Ｓｉ可充分形成富ＳｉＯ２的钝化膜。     

电分析化学在杂多酸研究中的应用：主族元素一取代硅钨杂多酸盐…

本文系统地研究了α和βｉ－Ｋ５ＳｉＭ（Ｈ２Ｏ）Ｗ１１Ｏ３９．ｎＨ２Ｏ（略写为α，βｉ－ＳｉＷ１１Ｍ，Ｍ＝Ａｌ．Ｇａ，ｉ＝１．２．３）的氧化还原性质，提出其还原机理，讨论了杂多酸阴离子的结构对其氧化还原性质的影响。确定了极谱第１波半波电位的顺序。     

YBCO／CeO2／Si多层膜超导材料的分析电镜研究

在具有ＣｅＯ２隔离层的Ｓｉ基片上获得了较高质量的ＹＢａ２Ｃｕ３Ｏ７－ｘ（ＹＢＣＯ）高温超导薄膜。在零磁场下，７７Ｋ时其临界电流密度达到１×１０６Ａ／ｃｍ２。研究发现，ＹＢＣＯ的（００１）面平行于Ｓｉ基片的（１００）面，而ＣｅＯ２过渡层由许多约４０ｎｍ×１００ｎｍ的细小ＣｅＯ２晶粒组成，其取向呈散乱分布。尽管ＣｅＯ２和Ｓｉ之间的晶格错配很小（约０．４％），ＣｅＯ２却不能在Ｓｉ上外延生长，而ＹＢＣＯ却能在取向凌乱的ＣｅＯ２上形成［００１］择优取向。ＣｅＯ２和Ｓｉ的界面处有一层极薄的过度层。ＹＢＣＯ和ＣｅＯ２界面存在Ｙ２ＢａＣｕＯ５（２１１相）。在ＹＢＣＯ薄膜中观察到有与１２３相混生的２４８相。     

角分布俄歇显微术──俄歇电子能谱的新进展

角分布俄歇显微术──俄歇电子能谱的新进展王志，张焕祯（河北轻化工学院环境工程系石家庄０５００１８）角分布俄歇显微术（ＡｎｇｕｌａｒＤｉｓｔｒｉｂｕｔｉｏｎＡｕｇｅｒＭｉｃｒｏｓｃｏｐｙ，简称ＡＤＡＭ）￣［１］是俄歇电子能谱技术近三年来一个突破性的新进...     

低温合成纳米α-Si3N4材料及结构表征

本文报道在机械驱动下力，通过机械合金化途径使氮或氨直接在室温下的逐步细化的，新鲜的，高反应活性的硅界面上充分扩散，形成亚稳态系统，在８００℃真空炉处理后得到纳米α－Ｓｉ３Ｎ４粉末。发现气氛对合成Ｓｉ３Ｎ４纳米粉末有很大影响。在氮气中，高能球磨前硅粉表面形成的氧化膜在高能球磨过程中与氮反应生成Ｓｉ２Ｎ２Ｏ保护层，阻止氮的进一步扩散，使反应产物含有大量未反应的游离硅。在氨气中可以避免生成了Ｓｉ２Ｎ２ｏ     

用逸氢热导法测定超细陶瓷粉中游离硅和游离铝

利用游离硅和游离铝与碱溶液作用产生氢气，使它们与ＳｉＣ、Ｓｉ３Ｎ４、ＡｌＮ，ＳｉＯ２以及Ａｌ２Ｏ３等多种硅（铝）化合物分离。     

金属基复合材料的界面分析

用透射电镜、扫描电镜、Ｘ射线能谱仪和电子探针研究了碳化硅颗粒（ＳｉＣｐ）增强Ａｌ２０１４复合材料的微观结构和界面。鉴定了界面上和基体中三种主要的沉淀相：ＣｕＡｌ２、Ｃｕ２Ｍｇ８Ｓｉ６Ａｌ５、（Ｍｎ，Ｆｅ）３ＳｉＡｌ１２和高温下形成的条状Ａｌ４Ｃ３。试验指出，碳化硅和基体间的界面上没有Ｓｉ和Ａｌ的相互扩散，并观察分析了ＳｉＣｐ／Ａｌ２０１４界面周围的无析出带和高密度位错     

RE2O3-Al2O3-SiO2玻璃连接氮化硅合成复相陶瓷的研究

采用Ｙ２Ｏ３－Ａｌ２Ｏ３－ＳｉＯ２－Ｘ稀土玻璃进行氮化硅复相陶瓷的连接。用四点弯曲方法测定不同连接工艺下的连接强度。并对连接界面进行ＳＥＭ、ＥＰＭＡ和ＸＲＤ分析。液相钎料玻璃在界面上与氮化硅反应，形成氮化硅／Ｓｉ２Ｎ２Ｏ／Ｙ（Ｌａ）－Ｓｉａｌｏｎ玻璃／Ｙ（Ｌａ）－Ｓｉａｌｏ玻璃的梯度层界面。接头强度随着保温时间、妆温度的增加，先增后。 在ＹＡＳ钎料中添加氧化镧，可以提高接头的高温强度。ＬａＹＯ３的     

Ta2O5/Si薄膜界面结构及光催化活性

利用溶胶-凝胶法和旋转镀膜法在单晶Si(110)基底上制备了Ta2O5光催化剂薄膜. 薄膜颗粒的晶粒度和大小随着热处理温度的升高而增加. 利用扫描俄歇电子能谱(AES)的表面成分分析、深度剖析和线形分析技术研究了热处理温度对Ta2O5/Si 样品膜层和基底的界面化学状态和相互作用的影响规律. 研究表明, 在700 ℃以下热处理时, Ta2O5/Si薄膜界面处以扩散作用为主;在800 ℃高温热处理时,在界面扩散的同时也引发界面反应, 生成了SiO2物种, 界面扩散和界面反应会对薄膜和基底元素的化学价态发生影响. 在紫外光下降解水杨酸的光催化活性的研究表明, 在600 ℃下焙烧制备的Ta2O5/Si薄膜具有与TiO2/Si薄膜相当的光催化活性.     

Interface diffusion and chemical reaction of PZT layer/Si (111) sample during the annealing treatment in air

The interface diffusion and chemical reaction between a PZT (PbZrxTi1-xO3) layer and a Si(111) substrate during the annealing treatment in air have been studied by using XPS (X-Ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy). The results indicate that the Ti element in the PZT precursor reacted with residual carbon and silicon, diffused from the Si substrate, to form TiCx, TiSix species in the PZT layer during the thermal treatment. A great interface diffusion and chemical reaction took place on the interface of PZT Si also. The silicon atoms diffused from silicon substrate onto the surface of PZT layer. The oxygen atoms, which came from air, diffused into silicon substrate also and reacted with Si atoms to form a SiO2 interlayer between the PZT layer and the Si (111) substrate. The thickness of SiO2 interlayer was proportional to the square root of treatment time. The formation of the SiO2 interlayer was governed by the diffusion of oxygen in the PZT layer at low annealing tempera     

Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

Summary Thin silicon nitride films (100–210 nm) with refractive indices varying from 1.90 to 2.10 were deposited on silicon substrates by low pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD). Rutherford backscattering spectrometry (RBS), ellipsometry, surface profiling measurements and Auger electron spectroscopy (AES) in combination with Ar⁺ sputtering were used to characterize these films. We have found that the use of (p-p)heights of the Si LVV and N KLL Auger transitions in the first derivative of the energy distribution (dN(E)/dE) leads to an accurate determination of the silicon nitride composition in Auger depth profiles over a wide range of atomic Si/N ratios. Moreover, we have shown that the Si KLL Auger transition, generally considered to be a better probe than the low energy Si LVV Auger transition in determining the chemical composition of silicon nitride layers, leads to deviating results.

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Quantitative Auger-Tiefenprofilanalyse von LPCVD- und PECVD-Siliciumnitridfilmen

     

Ultrathin films of Ge on the Si(100)2 × 1 surface

The Ge/Si(100)2 × 1 interface was investigated by means of Auger electron spectroscopy, low‐energy electron diffraction, thermal desorption spectroscopy, and work function measurements, in the regime of a few monolayers. The results show that growth of Ge at room temperature forms a thermally stable amorphous interface without significant intermixing and interdiffusion into the substrate, for annealing up to ~1100 K. Therefore, the Ge‐Si interaction most likely takes place at the outmost silicon atomic plane. The charge transfer between Ge and Si seems to be negligible, indicating a rather covalent bonding. Regarding the Ge overlayer morphology, the growth mode depends on the substrate temperature during deposition, in accordance with the literature. Stronger annealing of the germanium covered substrate (>1100 K) causes desorption of not only Ge adatoms, but also SiGe and Ge₂ species. This is probably due to a thermal Ge‐Si interdiffusion. In that case, deeper silicon planes participate in the Ge‐Si interaction. Above 1200 K, a new Ge superstructure (4 × 4)R45^o was observed. Based on that symmetry, an atomic model is proposed, where Ge adatom pairs interact with free silicon dangling bonds.     

Concepts for chemical state analysis at constant probing depth by lab-based XPS/HAXPES combining soft and hard X-ray sources

The greater information depth provided in hard X-ray photoelectron spectroscopy (HAXPES) enables nondestructive analyses of the chemistry and electronic structure of buried interfaces. Moreover, for industrially relevant elements like Al, Si, and Ti, the combined access to the Al 1s, Si 1s, or Ti 1s photoelectron line and its associated Al KLL, Si KLL, or Ti KLL Auger transition, as required for local chemical state analysis on the basis of the Auger parameter, is only possible with hard X-rays. Until now, such photoemission studies were only possible at synchrotron facilities. Recently, however, the first commercial XPS/HAXPES systems, equipped with both soft and hard X-ray sources, have entered the market, providing unique opportunities for monitoring the local chemical state of all constituent ions in functional oxides at different probing depths, in a routine laboratory environment. Bulk-sensitive shallow core levels can be excited using either the hard or soft X-ray source, whereas more surface-sensitive deep core-level photoelectron lines and associated Auger transitions can be measured using the hard X-ray source. As demonstrated for thin Al₂O₃, SiO₂, and TiO₂ films, the local chemical state of the constituting ions in the oxide may even be probed at near-constant probing depth by careful selection of sets of photoelectron and Auger lines, as excited with the combined soft and hard X-ray sources. We highlight the potential of lab-based HAXPES for the research on functional oxides and also discuss relevant technical details regarding the calibration of the kinetic binding energy scale.     

Implementing the electron backscattering factor in quantitative sputter depth profiling using AES

Sputter depth profiling using Auger electron spectroscopy (AES) is influenced by the electron backscattering contribution to the AES intensity. When approaching an interface between two components having a different backscattering factor, the shape of the profile is characteristically distorted. This distortion is taken into account in a modified version of the mixing‐roughness‐information depth (MRI) model. The modification is based on the simplified assumption that the influence of the backscattering effect of the component below the interface increases exponentially with decreasing distance of the actual surface to the interface. Application of the modified MRI model is shown to yield excellent results of profile calculation for AES depth profiling of Si/W, C/Ta, C/Ti, and Au/TiO₂ interfaces, with backscattering factor ratios close to those predicted by the Ichimura–Shimizu relation. A simple correction of the backscattering influence is proposed and discussed. Copyright © 2006 John Wiley & Sons, Ltd.     

The diffusion of Pt in BST films on Pt/Ti/SiO2/Si substrate by sol-gel method

Barium strontium titanate (Ba_0.65Sr_0.35TiO₃) ferroelectric thin films have been prepared by sol-gel method on Pt/Ti/SiO₂/Si substrate. The X-ray diffraction (XRD) pattern indicated that the films were a polycrystalline perovskite structure and the atomic force microscope (AFM) image showed that the crystallite size and the root mean square roughness (RMS) were 90 nm and 3.6 nm, respectively. The X-ray photoelectron spectrum (XPS) images showed that Pt consisting in BST thin films was the metallic state, and the Auger electron spectroscopy (AES) analysed the Pt concentration in different depth profiles of BST thin films. The result displayed that the Pt diffusion in BST thin film is divided into two regions: near the BST/Pt interface, the diffusion type was volume diffusion, and far from the interface correspondingly, the diffusion type became grain boundary diffusion. In this paper, the previous researcher’s result was used to verify our conclusion.     

Low-energy electron stimulated desorption of neutrals from multilayers of SiCl4 on Si(111)

The interaction of low-energy electrons with multilayers of SiCl(4) adsorbed on Si(111) leads to production and desorption of Cl((2)P(32)), Cl((2)P(12)), Si, and SiCl. Resonant structure in the yield versus incident electron energy (E(i)) between 6 and 12 eV was seen in all neutral channels and assigned to dissociative electron attachment (DEA), unimolecular decay of excited products produced via autodetachment and direct dissociation. These processes yield Cl((2)P(32)) and Cl((2)P(12)) with nonthermal kinetic energies of 425 and 608 meV, respectively. The Cl((2)P(12)) is produced solely at the vacuum surface interface, whereas the formation of Cl((2)P(32)) likely involves subsurface dissociation, off-normal trajectories, and collisions with neighbors. Structure in the Cl((2)P(32)) yield near 14 and 25 eV can originate from excitation of electrons in the 2e, 7t(2) and 6t(2), 6a(1) levels, respectively. Although the 14 eV feature was not present in the Cl((2)P(12)) yield, the broad 25 eV feature, which involves complex Auger filling of holes in the 6t(2) and 6a(1) levels of SiCl(4), is observed. Direct ionization, exciton decay, and DEA from secondary electron scattering all occur at E(i)>14 eV. Si and SiCl were detected via nonresonant ionization of SiCl(x) precursors that are produced via the same states and mechanisms that yield Cl. The Si retains the kinetic energy profile of the desorbed precursors.     

Projection of Si 1s photoexcited orbitals into resonant Auger electron spectra in KLL decays of Si(CH3)4 and SiF4

Spectator resonant KL(23)L(23) Auger electron spectra have been measured in the Si 1s photoexcitation region of Si(CH(3))(4) using monochromatized undulator radiation combined with a hemispherical electron spectrometer. The broad peak with high intensity in a total ion yield spectrum, coming mainly from excitation of a 1s electron into the 6t(2) vacant orbital, induces a spectator Auger decay in which the excited electron remains in its excited orbital. The component on the higher energy side of this peak through 1s excitation into a Rydberg orbital produces resonant Auger decays in which the excited Rydberg electron moves into a slightly higher Rydberg orbital, or is partly shaken up to a significantly higher Rydberg orbital. These findings of Si(CH(3))(4) indicate a clear contrast to those for SiF(4), in which the 1s excitation into a Rydberg orbital induces a shake-down phenomenon as well as a shake-up one. The results of these molecules exhibit a clear splitting effect among excited orbitals which are smeared out by overlapping due to lifetime widths and due to densely populated levels in the 1s electron excitation spectrum. This is consistent with the calculation on photoexcitation within the framework of density functional theory.