共查询到19条相似文献,搜索用时 265 毫秒
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本文用X射线衍射形貌法、红外吸收光谱法和金相腐蚀坑法,探讨了氢气氛区熔硅单晶热处理缺陷的形成机理。在生长态晶体中存在着三种Si-H键,对应的红外吸收峰波长分别为4.55微米、4.75微米和5.13微米。随着加热过程的进行,Si—H键逐渐分解而消失。5.13微米吸收峰的消失温度是450℃,4.55微米吸收峰的消失温度是600℃,4.75微米吸收峰的消失温度是700℃。晶体中的热处理缺陷是由于氢沉淀造成的,沉淀过程首先是Si—H键分解,然后是氢的扩散和聚集。沉淀过程的激活能是2.4电子伏特(56000卡/克分
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一、前 言 无位错硅单晶中的微缺陷严重地影响着大规模集成电路的性能,已引起许多学者的关注和兴趣[1-3],由于微缺陷的应力场很小,目前对直拉硅单晶中微缺陷的观察,主要采用择尤化学腐蚀法、缀饰X射线形貌术、EBIC模式扫描电子显微术、透射电子显微术等.但上述方法的共同缺点是要对样品进行处理.近年来,一些学者采用特殊的X射线双晶形貌方法,对硅单晶原生微缺陷进行观察[4,5],但其设备复杂,实验周期长.我们首次用X射线投影和截面形貌术对不经缀饰的硅单晶原生微缺陷进行了观察,并获得了相应的微缺陷图. 二、实 验 实验用的样品是沿 [100]… 相似文献
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半导体材料是制造半导体器件的基础,材料的质量直接影响器件的质量和可靠性.器件工艺要求提供超纯无缺陷的晶体.硅单晶中常见的并对器件性能影响较大的缺陷就是位错.因而硅单晶的拉制中很根本的一条,就是要求无位错. 拉制无位错或低位错[111]硅单晶,现时普遍采用达什(W.C.Dash)早年阐明的正[111]晶向籽晶缩颈技术[1]. 我们研究和应用了向特定方向偏离一定角度的[111]定向偏角籽晶,配合适宜的温场和拉晶参数,在国产TDK-36AZ单晶炉上稳定地拉制出无位错[111]硅单晶,并已确定了工艺,投人了批量生产.投料800克,无位错单晶成品率一股在 65—7… 相似文献
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利用X射线形貌术方法研究了含氢硅单晶中氢致缺陷的分布。将原生晶棒从内部切开,观察到在切口暴露表面附近,热处理后产生的氢致缺陷的密度与尺寸与内部未暴露部分相同,而不同于薄片退火的情况,对此结果作了简要的讨论。
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R. I. Batalov R. M. Bayazitov N. M. Khusnullin E. I. Terukov V. Kh. Kudoyarova G. N. Mosina B. A. Andreev D. I. Kryzhkov 《Physics of the Solid State》2005,47(1):1-4
The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a possible approach to the design of silicon-based light-emitting structures in the near infrared region. Defects were introduced into silicon plates by traditional mechanical polishing. The changes in the defect structure and the impurity composition of damaged silicon layers during thermal annealing (TA) of a crystal were examined using transmission electronic microscopy and x-ray fluorescence. Optical properties of the defects were studied at 77 K using photoluminescence (PL) in the near infrared region. It has been shown that the defects generated by mechanical polishing transform into dislocations and dislocation loops and that SiO2 precipitates also form as a result of annealing at temperatures of 850 to 1000°C. Depending on the annealing temperature, either oxide precipitates or dislocations decorated by copper atoms, which are gettered from the crystal bulk, make the predominant contribution to PL spectra. 相似文献
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Lei Zhong Zhanguo Wang Shouke Wan Jinbin Zhu F. Shimura 《Applied Physics A: Materials Science & Processing》1992,55(4):313-316
Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 meV below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy. 相似文献
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The effect of x-ray scattering by neutron-irradiated and reference (unirradiated) silicon crystals grown by the Czochralski method and annealed at temperatures of 850–1050°C on the defect formation is comparatively investigated using triple-crystal x-ray diffractometry. The sizes and concentrations of clusters composed of point defects and dislocation loops formed during decomposition of an oxygen-containing solid solution and subsequent clusterization of the point defects are calculated. 相似文献
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G. Lu 《辐射效应与固体损伤》2013,168(3):301-312
Abstract Defects produced in ZnTe single crystals by Ar+ bombardment during ion milling for transmission electron microscopy studies are investigated in detail. The defects have been identified to be interstitial type Frank loops. Influences of ion energy and specimen temperature during the irradiation on the defect geometry are investigated. A model is proposed to describe the growing up of the loops. 相似文献
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Point defect agglomerates in dislocation-free silicon crystals, usually called “swirls”, have been investigated by means of high-voltage electron microscopy. It was found that a single swirl defect consists of a dislocation loop or a cluster of dislocation loops. By contrast experiments it could be shown that these loops are formed by agglomeration of self-interstitial atoms. Generally the loops have a/2〈110〉 Burgers vectors, but in specimens with high concentrations of carbon (~1017 cm?3) and oxygen (~1016 cm?3) also dislocation loops including a stacking fault were observed. In crystals grown at growth rates higher thanv=4 mm/min no swirls are observed; lower growth rates do not markedly affect the size and shape of the dislocation loops. With decreasing impurity content (particulary of oxygen and carbon) the swirl density decreases, whereas the dislocation loop clusters become larger and more complex. A model is presented which describes the formation of swirls in terms of agglomeration of silicon self-interstitials and impurity atoms. 相似文献
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采用传统Bridgman方法和加入accelerated crucible rotation technique的Bridgman(缩写为ACRT-B)方法生长的Cd1-xZnxTe(x=0.04)晶体中存在有点缺陷、位错、杂质和Te沉淀等缺陷.为了减少甚至消除这些缺陷,必须将生长后的CdZnTe晶片在Cd气氛下退火.从Cd-Te和Cd0.96Zn0.04Te的PT相图出发,详细讨论了CdZnTe晶体的气固平衡条件,并
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1-xZnxTe')" href="#">Cd1-xZnxTe
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气-固平衡 相似文献
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A. V. Yatsenko S. V. Yevdokimov A. S. Pritulenko D. Yu. Sugak I. M. Solskii 《Physics of the Solid State》2012,54(11):2231-2235
The temperature dependence of the electrical conductivity and pyroelectric coefficient of lithium niobate crystals reduced in a hydrogen atmosphere has been studied. It has been established that the activation energy of dark electrical conduction in these crystals in the temperature range 288?C350 K differs from the corresponding values for crystals reduced in vacuum and is equal to 0.68 ± 0.02 eV. It has been shown that the annealing of LiNbO3 crystals in a hydrogen atmosphere hardly affects their pyroelectric properties. The mechanism of electrical conduction of LiNbO3 crystals reduced in a hydrogen-containing atmosphere has been discussed. 相似文献