不同能量的高电荷态Ar12+离子辐照对Au纳米颗粒尺寸的影响

报道了在兰州重离子加速器国家实验室电子回旋共振离子源原子物理实验平台上,在室温（293.15K）条件下,用固定剂量（4.3×10¹¹/cm²）的高电荷态⁴⁰Ar¹²⁺离子,辐照沉积在厚度为300nm的金膜表面上、平均直径约为35.3nm的Au纳米颗粒,使其大小发生改变的实验结果.实验中,通过改变入射离子的引出电压,选择不同的能量,利用原子力显微镜（AFM）对辐照前后颗粒的形态和大小进行表征,系统地研究了辐照后Au纳米颗 关键词： 纳米颗粒 高电荷态离子 离子辐照 临界能量     

Photoluminescent properties of ZnS nanoparticles prepared by electro-explosion of Zn wires

We study the photoluminescent properties of ZnS nanoparticles without the influence of dopants or magnetic impurities. The ZnS nanoparticles reported in this case were synthesized by a novel method of electro-explosion of wire (EEW). The nanoparticles were prepared employing electro-explosion of pure zinc wires in a cell filled with sulfide ions to produce a free-standing compound ZnS semiconductor. To investigate the structural and optical properties, these nanoparticles were characterized by X-ray powder diffraction (XRD), atomic force microscopy (AFM), UV–visible and photoluminescence (PL) spectroscopy. Consistent with the enhancement of the PL intensity of the 443 nm peak due to deep blue emission of ZnS particles, the XRD of the nanoparticles reveals a hexagonal phase of ZnS nanocrystallites prepared by our novel synthesis technique.      

Synthesis, characterization and optical properties of water-soluble ZnS:Mn nanoparticles

ZnS nanoparticles with Mn²⁺ doping (0.5-20%) have been prepared through a simple chemical method, namely the chemical precipitation method. The structure of the nanoparticles has been analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and UV-vis spectrometer. The size of the particles is found to be 3-5 nm range. Photoluminescence spectra were recorded for undoped ZnS nanoparticles using an excitation wavelength of 320 nm, exhibiting an emission peak centered at around 445 nm. However, from the Mn²⁺-doped samples, a yellow-orange emission from the Mn²⁺⁴T₁-⁶A₁ transition is observed along with the blue emission. The prepared Mn²⁺-doped sample shows efficient emission of yellow-orange light with the peak emission 580 nm with the blue emission suppressed. The maximum PL intensity is observed only at the excitation energy of 3.88 eV (320 nm). Increase in stabilizing time up to 48 h in de-ionized water yields the enhancement of emission intensity of doped (4% Mn²⁺) ZnS. The correlation made through the concentration of Mn²⁺ versus PL intensity resulted in opposite trend (mirror image) of blue and yellow emissions.     

Surface modification and fluorescent properties of Mn2+-doped and undoped ZnS nanoparticles

Abstract

ZnS nanoparticles and Mn²⁺-doped ZnS nanoparticles were prepared by a reverse micelle reaction system. In addition, ZnS and Mn²⁺-doped ZnS nanoparticles were modified with poly(vinyl alcohol) (PVA) and 1-dodecanethiol (C₁₂H₂₅SH). The average particle size of the ZnS sample is determined around 2.3 nm by using the well-known Scherrer equation, which is in accordance with the results obtained from UV–vis and TEM analysis. Fluorescence intensity of the Mn²⁺-doped ZnS nanoparticles increases with increasing Mn²⁺ content compared with undoped ZnS nanoparticles, and coating PVA can also make fluorescence intensity increase. Different Zn²⁺/S^2- or C₁₂H₂₅SH/Zn²⁺ can affect intensity of PL emission peak and its position, which is discussed in this paper.     

Mn2+, Pb2+共掺杂ZnS纳米材料制备及光致发光

采用聚乙烯基吡咯烷酮(PVP)为表面包覆剂,在室温大气条件下的水溶液中制备了ZnS:Mn,Pb纳米晶。讨论了Mn²⁺和Pb²⁺掺杂量对ZnS纳米发光材料光致发光强度的影响,确定了Mn²⁺和Pb²⁺掺杂量相对于Zn²⁺的最佳的量的比,并对其发光机理进行了初步的探讨。     

Ti离子注入和退火对ZnS薄膜结构和光学性质的影响

利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×10¹⁷ cm^-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射（XRD）研究了薄膜结构的变化,利用光致发光（PL）和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词： ZnS薄膜 离子注入 X射线衍射 光致发光     

Structural modification in swift heavy ion irradiated muscovite mica

Two-layer monoclinic(2 M) muscovite mica sheets with a thickness of 12 μm are irradiated with Sn ions at room temperature with electronic energy loss( dE/dx)_e of 14.7 keV/nm. The ion fluence is varied between 1×10~(11) and1×10~(13) ions/cm~2. Structural transition in irradiated mica is investigated by x-ray diffraction(XRD). The main diffraction peaks shift to the high angles, and the inter-planar distance decreases due to swift heavy ion(SHI) irradiation. Dehydration takes place in mica during SHI irradiation and mica with one-layer monoclinic(1 M) structure is thought to be generated in 2 M mica after SHI irradiation. In addition, micro stress and damage cross section in irradiated mica are analyzed according to XRD data. High resolution transmission electron microscopy(HRTEM) is used on the irradiated mica to obtain the detailed information about the latent tracks and structural modifications directly. The latent track in mica presents an amorphous zone surrounded by strain contrast shell, which is associated with the residual stress in irradiated mica.     

Au纳米颗粒和CdTe量子点复合体系发光增强和猝灭效应

利用金属蒸发真空多弧离子源注入机, 将Au离子注入到高纯石英玻璃来制备镶嵌有Au 纳米颗粒的衬底材料, 随后将化学方法合成的CdTe量子点旋涂在玻璃衬底上制备了Au纳米颗粒和CdTe量子点复合体系. 通过对镶嵌有Au纳米颗粒的衬底进行热退火处理来控制Au纳米颗粒的生长和分布, 系统研究了Au纳米颗粒的局域表面等离子体共振对CdTe量子点光致发光性能的影响. 利用光学吸收谱、原子力显微镜、透射电子显微镜和光致发光谱对样品进行了表征和测试. 光致发光谱表明, Au纳米颗粒的局域表面等离子体对CdTe量子点的发光有增强效应也有猝灭效应. 深入分析了Au纳米颗粒和CdTe量子点之间的相互作用过程, 提出了关于Au-CdTe 纳米复合体系中CdTe 发光增强和猝灭的新机理. 该实验结果为利用金属纳米颗粒表面等离子体技术制备高发光性能的光电子器件提供了较好的参考.     

Swift heavy ion induced structural modification and photo-luminescence in CaS:Bi nanophosphors

CaS:Bi nanocrystalline powder of average grain size 35 nm was prepared by wet chemical co-precipitation method and irradiated with 100 MeV oxygen ions at fluences between 1×10¹² and 1×10¹³ ion/cm². The irradiation induced damage and modifications were studied using X-ray Diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. With the increase in ion fluences, the crystallinity of CaS was destroyed upto 25.9 % for the reflection (200) and 21.1 % for the reflection (220) and the peaks broadens at a much faster rate due to grain breaking process. Structural parameters such as grain size, strain and dislocation density have shown a significant change after ion irradiation. The effects of different dopant concentrations on PL emission intensity after irradiation were also investigated. A blue shift of the photoluminescence peak with increasing ion fluence was noticed and was also ascribed to a decrease in the CaS grain size.      

绝缘体中金属离子注入合成纳米颗粒的理论研究

理论上提出了利用离散电子态来计算绝缘体中金属纳米颗粒Fermi能级的方法,给出了金属纳米颗粒的能级结构,并得到了依据金属纳米颗粒等离子体共振峰计算金属纳米颗粒尺寸的新公式.该理论可解释相关现象,通过实验初步验证了该理论的正确性. 关键词： 离子注入 金属纳米颗粒 绝缘体 Fermi能级     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

Structural and size evolution of indium nanoparticles embedded in aluminum synthesized by ion implantation

The structural and the size evolution of embedded In nanoparticles in Al synthesized by ion implantation and subsequent annealing are experimentally investigated. The average radius r of In nanoparticles is determined as a function of annealing time in a temperature range between 423 K and 453 K. The structural transition of In nanoparticles with the crystallographic orientation In(200)[002] Al(200)[002] is observed to change into In(111)[110] Al(002)[110] with a critical particle radius between 2.3 nm and 2.6 nm. In addition, the growth of In nanoparticles in the annealing process is evidently governed by the diffusion limited Ostwald ripening. By further analyzing the experimental data, values of diffusion coefficient and activation energy are obtained.     

An investigation of electron and oxygen ion damage in Si npn RF power transistors

Abstract

The effects of 8 MeV electrons and 60 and 95 MeV oxygen ions on the electrical properties of Si npn RF power transistors have been investigated as a function of fluence. The dc current gain (h _FE), displacement damage factor, excess base current (Δ I _B=I _Bpost?I _Bpre), excess collector current (Δ I _C=I _Cpost?I _Cpre), collector saturation current (I _CS) and deep level transient spectroscopy trap signatures of the irradiated transistors were systematically evaluated.     

核-壳结构的ZnS:Mn纳米粒子的荧光增强

采用反胶束方法制备了ZnS :Mn纳米粒子并对其进行了ZnS壳层修饰 ,采用发射光谱和激发光谱对其光学性质进行了研究。与未包覆的ZnS:Mn纳米粒子相比 ,核 壳结构的ZnS :Mn纳米粒子来自于Mn2 离子的 5 80nm的发光增强了数倍 ,归因于ZnS壳增加了Mn2 离子到纳米颗粒表面的距离 ,减弱了Mn2 离子向表面猝灭中心的传递。样品制备后 ,核 壳结构的ZnS :Mn纳米粒子在 5 80nm的发光随时间略有增强 ,激发光谱的位置未发生明显变化 ,而未包覆的ZnS:Mn纳米粒子在 5 80nm的发光显著增强 ,同时自激活发光减弱 ,激发光谱明显发生红移 ,说明未包覆的ZnS :Mn纳米粒子的尺寸随时间增大 ,而核 壳结构的ZnS :Mn纳米粒子尺寸基本不变。     

Resonance Raman study of He+ ion implanted nanostructured ZnS

ZnS nanocrytsals of size ∼2.5 nm were prepared by chemical precipitation technique. Pressed pellets of nanostructured ZnS were implanted with He⁺ ions at doses of 5 × 10¹⁴, 1 × 10¹⁵ and 5 × 10¹⁵ ions/cm². Raman spectra of both unimplanted and He⁺ ion implanted samples were recorded with ultraviolet (UV) excitation. LO, 2LO, 2TO, (LO + TA) and (2TO − TA) modes of ZnS were observed in the resonance Raman spectra of the unimplanted nanostructured ZnS samples. In addition, a surface mode was observed at 294 cm⁻¹. With the implantation of He⁺ ions, the 2TO mode disappeared and 2LO mode became prominent and this observation was attributed to the decrease in band gap of ZnS nanocrytsals due to ion implantation. The exciton–LO phonon coupling strength was determined from the intensity ratio of 2LO to LO modes and it was observed that the exciton–LO phonon coupling strength increases with increase in implantation dose. In the present work, we report for the first time the observation of 2TO mode in the resonance Raman spectrum of nanostructured ZnS and also the modification of exciton–LO phonon coupling strength of semiconductor nanoparticles by ion implantation. Copyright © 2008 John Wiley & Sons, Ltd.     

Temperature dependence of photoluminescence and electroluminescence of ZnS:Mn crystals

By means of comprehensive analysis of the temperature dependences of the photoluminescence for ZnS:Mn crystals, we have observed persistent changes in the intensity, shape, and position of the maximum in the emission spectrum associated with changes in the immediate environment of the manganese luminescence centers. We have also observed inflection points on the voltage vs. brightness characteristics of the samples, the position of which depends on the frequency of the exciting voltage and the temperature. The observed dependences are explained using concepts describing the mechanisms of pre-breakdown luminescence. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 5, pp. 631–636, September–October, 2006.     

Luminescence properties of co-doped ZnS:Ni,Mn and ZnS:Cu,Cd nanoparticles

Transition metal doped ZnS:Ni and ZnS:Cu and co-doped ZnS:Ni, Mn and ZnS:Cu, Cd nanoparticles were synthesized through the chemical precipitation method in an air atmosphere. The XRD analysis of co-doped samples shows the formation of cubic phase. The average size of nanoparticles ranges from 3.6 to 5.5 nm. The formation of co-doped nanoparticles was confirmed by XRD and PL analysis. The PL spectra show that the obtained nanoparticles have good crystal quality. An optimum concentration of transition metals was selected in co-doped ZnS nanoparticles.     

Luminescence induced by elastic deformation of ZnS:Mn nanoparticles

When the thin film of ZnS:Mn nanoparticles deposited on a glass substrate is elastically deformed by applying a load, then initially the mechanoluminescence (ML) intensity increases with time, attains a peak value I_m at a particular time t_m, and later on it decreases with time. The rise and decay characteristics of the ML produced during release of the load are also similar to those produced during the application of load. Similar rise, occurrence of peak and then decrease in ML intensity are also found, when the film is deformed impulsively by dropping a steel ball of small mass from a low height; however, in this case, the time durations for the occurrence of ML and decay time of ML are very short. In the cases of loading and impulsive deformation ,after t_m, initially the ML intensity decreases at a fast rate and then at a slow rate, in which the decay time of fast decrease is equal to the time-constant for rise of pressure and the decay time for slow decrease is equal to the relaxation time of the surface charges. In the case of loading, the peak intensity I_m and the total intensity I_T of ML increase quadratically with the magnitude of applied pressure; however, in the case of impulsive deformation, both the I_m and I_T increase linearly with the height through which the ball is dropped on to the sample. In the case of deformation of the samples at a fixed strain rate, I_m should increase linearly with the applied pressure. The elastico ML in ZnS:Mn nanoparticles can be understood on the basis of the piezoelectrically-induced electron detrapping model, in which the local piezoelectric field near the Mn²⁺ centres reduces the trap-depth, and therefore, the detrapping of filled electron traps takes place, and subsequently the energy released non-radiatively during the electron-hole recombination excites the Mn²⁺ centres and de-excitation gives rise to the ML. The equal number of photons emitted during the application of pressure, release of pressure, and during the successive applications of pressure, indicates that the detrapped electron-traps get filled during the relaxation of the surface charges induced by the application and release of pressure because the charge carriers move to reduce the surface charges. On the basis of the piezoelectrically-induced electron detrapping model, expressions are derived for different characteristics of the ML of ZnS:Mn nanoparticles and a good agreement is found between the theoretical and experimental results. The expressions explored for the dependence of ML intensity on several parameters may be useful in tailoring the suitable nanomaterials capable of exhibiting ML during their elastic deformation. The values of the relaxation time of surface charges, time-constant for the rise of pressure, and the threshold pressure can be determined from the measurement of the time-dependence of ML. It seems that the trapping and detrapping of charge carriers in materials can be studied using ML.     

ZnS纳米棒阵列的结构和光学特性

采用等离子体辅助的低压金属有机化学气相沉积（LP-MOCVD）技术,在没有引入任何金属催化剂的条件下,在c平面的蓝宝石衬底上制备出高取向的ZnS纳米棒阵列。从样品的场发射扫描电镜（SEM）和透射电镜的照片（TEM）中可以看到,获得的ZnS纳米棒具有均一的直径和长度,其直径和长度约为60,400nm;X射线衍射（XRD）和选区电子衍射（SAED）谱指出获得的ZnS纳米棒为单晶的六角结构。此外,在光致发光（PL）谱中还观测到了发光峰位于335nm强的近带边发射。     

Analysis of the effect of annealing on the photoluminescence spectra of Cu ion implanted ZnS nanoparticles

In the present study, we report the photoluminescence (PL) study of nanoparticles of ZnS implanted with Cu⁺ ions at the doses of 5×10¹⁴, 1×10¹⁵ and 5×10¹⁵ ions/cm² and annealed at 200 and 300 °C. The photoluminescence spectra of the samples implanted at lower doses of 5×10¹⁴ and 1×10¹⁵ ions/cm² and annealed at 200 and 300 °C showed peaks at around 406, 418 and 485 nm. The PL emission peak at 485 nm was attributed to the transition of electrons from conduction band of ZnS to the impurity level formed by the implanted Cu⁺ ions. In the PL spectrum of the sample implanted at the highest dose of 5×10¹⁵ ions/cm², in addition to the emission peaks observed in the PL spectra of the samples implanted at lower doses, a peak at around 525 nm, the intensity of which decreased with increase in the annealing temperature, was observed. The emission peak at 525 nm was attributed to the transitions between sulfur and zinc vacancy levels. The full width at half maximum (FWHM) of the emission peak at 406 nm was observed to decrease with increase in annealing temperature, indicating lattice reconstruction. The observation of copper ion impurity related peak at 485 nm in the PL spectra of samples of the present study indicated that the doping of copper ions into the ZnS lattice is achievable by implanting Cu⁺ ions followed by annealing.