纳米晶锐钛矿相TiO2的非简谐效应和声子局域

对晶粒尺寸为19.4,8.6和5.6 nm的纳米晶锐钛矿相TiO2,进行了从83到723 K的变温拉曼散射测量,并对Eg(1)模式进行了详细研究.根据非简谐效应和声子局域模型,对Eg(1)拉曼峰进行了拟合与计算.结果表明,以上三种纳米晶粒的晶格振动机理,在本质上是相同的.三声子过程对频率蓝移起主要作用.为了得到很好的拟合,需要同时考虑三声子和四声子过程.随着温度的升高,四声子过程增强,并对三声子过程起抵消作用.与非简谐衰减相关的声子寿命随着晶粒尺寸的减小而增加,晶粒尺寸越小衰减越慢.在低温区,声子局域是导致5.6 nm晶粒的声子寿命非常短的原因.声子局域引起Eg(1)模式在高波数段非对称展宽和频率蓝移,其对Eg(1)峰展宽的影响要大于对峰位移动的影响.     

高压导致纳米TiO2形变的电子显微研究

α-PbO₂相TiO₂高压相具有适宜的带隙能和可见光范围的光催化能力,是一种适用于可见光、高效且环保的光催化材料.本文使用金刚石对顶压砧对锐钛矿纳米球进行加压-卸压处理得到了α-PbO₂相TiO₂高压相.利用透射电子显微镜对比初始样品和卸压样品,观察结果表明晶粒发生了明显形变,高分辨图显示其晶粒中存在大量[100]方向层错和形变孪晶,其中亚微米级晶粒中形成了透镜形片层结构的形变孪晶带;纳米级晶粒中形成了扇形多重形变孪晶.研究表明高压下锐钛矿TiO₂可以发生明显的形变,其形变的微观机制与金属类似,主要为形变孪晶和层错滑移,形变孪晶的形成存在明显的尺寸效应.这些结果为TiO₂高压相变的尺寸效应研究提供了一个新的切入点,同时还为制备孪晶α-PbO₂相TiO₂高压相提供了方法.     

稀土钇、镧掺杂TiO2薄膜的拉曼谱分析

采用溶胶-凝胶法在石英玻璃衬底上用旋涂法制备了未掺杂、掺杂钇和掺杂镧的TiO₂薄膜样品,对样品在700—1100 ℃范围内进行退火处理,并对样品的拉曼光谱进行了分析.分析表明:随着退火温度的升高,未掺杂TiO₂薄膜发生了从锐钛矿相经混相最终向金红石相的转换,掺杂钇和掺杂镧对TiO₂薄膜的晶相转换起阻碍作用,掺杂镧的阻碍作用更强;稀土掺杂能使TiO₂薄膜晶粒细化,并使晶粒内部应力增大从而阻碍晶格振动,掺杂镧比掺杂钇的效果 关键词： 2薄膜')" href="#">TiO₂薄膜 稀土掺杂 拉曼光谱 溶胶-凝胶     

MgB2超导薄膜的变温拉曼光谱研究

MgB₂作为迄今为止超导转变温度最高的合金超导体,由于其具有结构简单、相干长度长、晶界间不存在弱连接、上临界场很高、电-声散射时间短等特点,MgB₂超导薄膜在电子学领域有着广阔的的应用前景。拉曼光谱是研究电-声子相互作用和超导能带的一种有效方法,且已广泛用于分析MgB₂材料的电子、声子特征以及超导体能带结构,研究表明,样品质量、晶粒尺寸以及测试条件对MgB₂拉曼峰的峰位和峰形影响很大,其中拉曼光谱随温度的变化也是一个研究重点,但目前关于MgB₂变温拉曼光谱的研究,测试的温度范围相对较小,局限在83 K到室温区域或是转变温度附近。研究了大范围温度区间内MgB₂薄膜的拉曼光谱变化,采用混合物理化学沉积法在(0001)SiC衬底上制备了MgB₂多晶薄膜,薄膜的晶粒尺寸约为300 nm,超导转变温度为39.3 K,对其在10～293 K之间的拉曼光谱进行了测试,测量的波数范围为20～1 200 cm-1。变温拉曼光谱的测试结果显示,在高频620 cm-1附近以及低频80和110 cm-1附近存在MgB₂的拉曼峰。经分析,低频区域出现的两个拉曼峰的频率与超导能隙宽度相对应,表明MgB₂的双能隙特性。考虑到MgB₂中四种声子模式的拉曼活性,高频620 cm-1附近的拉曼峰应是由E_2g振动模所贡献的,且随着测试温度的降低,该拉曼峰的峰位未发生明显的偏移,但半高宽显著变小,从293 K时的380.7 cm-1减小到10 K时的155 .7 cm-1,分析表明E_2g声子与电子系统的非线性耦合所引起的非简谐效应可能是拉曼峰半高宽线性变小的主要原因。     

球磨处理的TiO2光谱特征及其光催化性能研究

为改变TiO₂的颗粒尺寸和提高其光催化性能,采用高能球磨法处理TiO₂粉末,研究球磨时间对样品微观形貌、晶体结构、拉曼光谱、荧光光谱和光催化性能的影响;分析荧光光谱和光催化性能之间的关系,确定光催化机理为快速判断其光催化性能提供依据。结果表明：随着球磨时间的增加样品颗粒由规则形状变成无规则形状且表面变得粗糙。所有样品均主要为锐钛矿结构,有少量的金红石结构,随着球磨时间的增加金红石结构的(110)衍射峰逐渐增强说明在球磨过程中少量的TiO₂发生了相转变,晶粒尺寸先减小后增加。所有样品均出现锐钛矿型TiO₂拉曼散射峰,而未发现金红石晶型的拉曼散射峰。各个拉曼峰的半高宽随着球磨时间的增加都有所增加,这表明样品的表面质量下降,表面缺陷和氧空位逐渐增加导致。所有样品在470 nm附近均出现荧光峰,且球磨后的样品该荧光峰得到增强,经过球磨后的TiO₂样品在397, 452, 483, 500和536 nm等处出现荧光峰,且球磨4 h后的TiO₂荧光峰强度最强,表明其表...     

不同晶粒尺寸SnO2纳米粒子的拉曼光谱研究

对晶粒尺寸在4—80nm范围的纯SnO₂纳米颗粒进行了拉曼散射研究.除了SnO₂本征拉曼振动峰外，还有几个新的拉曼振动峰和波长在700nm左右的一个发光很强而且峰宽很大的荧光峰被观察到.结果所示，当纳米颗粒尺寸减小时，纳米SnO₂颗粒的体相 特征拉曼峰变弱，而由缺陷，表面和颗粒尺寸引起的相关效应呈强势.晶粒尺寸在20nm左右是引起体相拉曼光谱变化的临界尺寸.晶粒尺寸在20nm以下，其体相拉曼峰的发生宽化和峰位移动，以及分别出现在位于571cm^-1 的表面振动峰，位于351cm-1 处的界面峰和与表面吸附水分子及氢氧基团的N系列拉曼峰是纳米SnO颗粒的主要特征.这些结果反映了纳米颗粒的微结构变化与颗粒尺寸和表面效应以及它们之间相互作用的信息. 关键词： ２')" href="#">纳米SnO_２ 拉曼光谱 荧光光谱 水分子的吸附     

用SAXS和XRD方法研究TiO2纳米颗粒微观结构

用溶胶-凝胶方法制备了TiO₂纳米样品,并对该样品在300℃到800℃温度区域进行了退火处理.应用同步辐射X射线粉末衍射(XRD)方法研究了经不同热处理温度的TiO₂纳米颗粒的结构相变.应用同步辐射小角X射线散射(SAXS)方法研究了TiO₂纳米颗粒的表面分形与界面特性.得到纳米颗粒粒度与退火温度的变化规律,讨论了表面界面特征与相变的关系. 关键词： X射线小角散射 X射线衍射 2纳米颗粒')" href="#">TiO₂纳米颗粒     

镶嵌在SiO2薄膜中InAs纳米颗粒的Raman散射

对镶嵌在SiO₂薄膜中纳米InAs颗粒的Raman散射谱进行了研究.与大块InAs晶体相比,InAs纳米颗粒的Raman散射谱具有相似的特征,即由纵光学声子模和横光学声子模组成,但是散射峰宽化并红移.用声子限域效应解释了散射峰的红移现象,并结合InAs纳米颗粒的应力效应解释了红移量与理论值的差异. 关键词： 2薄膜')" href="#">SiO₂薄膜 InAs量子点 Raman散射     

纳米金属镝的传导电子定域化

研究不同粒径的稀土金属镝(Dy)纳米晶块体材料的电阻率随温度的变化. 电阻率包括剩余电阻率ρ_res=ρ(0)、磁散射电阻率ρ_mag(T)和声子散射电阻率ρ_pho(T). 样品的平均粒径分别为10,30,100和1000 nm. 实验发现磁散射电阻率ρ_mag(T)和声子散射电阻率ρ_{pho 关键词： 镝金属电性 定域化 能带论 无序}     

SmCo7纳米晶合金晶粒组织热稳定性的热力学分析与计算机模拟

推导出了单相纳米晶合金的晶界过剩体积与晶粒尺寸之间的定量关系, 建立了纳米晶合金的晶界热力学性质随温度和晶粒尺寸发生变化的确定性函数. 针对SmCo₇纳米晶合金, 通过纳米晶界热力学函数计算和分析, 研究了单相纳米晶合金的晶粒组织热稳定性. 研究表明, 当纳米晶合金的晶粒尺寸小于对应于体系中晶界自由能最大值的临界晶粒尺寸时, 纳米晶组织处于相对稳定的热力学状态; 当纳米晶粒尺寸达到和超过临界尺寸时, 纳米晶组织将发生热力学失稳, 导致不连续的快速晶粒长大. 利用纳米晶合金热力学理论与元胞自动机算法相耦合的模型对SmCo₇纳米晶合金在升温过程中的晶粒长大行为进行了计算机模拟, 模拟结果与纳米晶合金热力学模型的计算预测结果一致, 由此证实了关于纳米晶合金晶粒组织热稳定性的研究结论. 关键词： 纳米晶合金热力学 7纳米晶合金')" href="#">SmCo₇纳米晶合金 热稳定性 计算机模拟     

Raman investigation of silicon nanocrystals: quantum confinement and laser‐induced thermal effects

We present a detailed experimental and theoretical Raman investigation of quantum confinement and laser‐induced local thermal effects on hydrogenated nanocrystalline silicon with different nanocrystal sizes (3.6–6.2 nm). The local temperature was monitored by measuring the Stokes/anti‐Stokes peak ratio with the laser power density range from ~120 to 960 kW/cm². In combination with the three‐dimensional phonon confinement model and the anharmonic effect, which incorporates the three‐phonon and four‐phonon decay processes, we revealed an asymmetrical decay process with wavenumbers ~170 and 350 cm^–1, an increasing anharmonic effect with nanocrystal sizes, and a shortening lifetime with enhanced temperature and decreasing nanocrystal dimension. Furthermore, we demonstrated experimentally that for Si nanocrystals smaller than 6 nm, the quantum confinement effect is dominant for the peak shift and line broadening. Copyright © 2011 John Wiley & Sons, Ltd.     

Interplay between phonon confinement effect and anharmonicity in silicon nanowires

Getting light out of silicon is a difficult task since the bulk silicon has an indirect energy electronic band gap structure. It is expected that this problem can be circumvented by silicon nanostructuring, since the quantum confinement effect may cause the increase of the silicon band gap and shift the photoluminescence into the visible energy range. The increase in resulting structural disorder also causes the phonon confinement effect, which can be analyzed with a Raman spectroscopy. The large phonon softening and broadening, observed in silicon nanowires, are compared with calculated spectra obtained by taking into account the anharmonicity, which is incorporated through the three and four phonon decay processes into Raman scattering cross-section. This analysis clearly shows that the strong shift and broadening of the Raman peak are dominated by the anharmonic effects originating from the laser heating, while confinement plays a secondary role.     

Phonon confinement effect on nanocrystalline LiCoO2 studied with Raman spectroscopy

A systematic investigation on nanocrystalline LiCoO₂ has been carried out using Raman spectroscopy. We synthesized nanocrystalline LiCoO₂ (ca. 20-50 nm) through a combination of rapid thermal annealing at various annealing temperatures and a sol-gel method assisted with a triblock copolymer surfactant. Powder X-ray diffraction measurements revealed the formation of LiCoO₂. The crystallite size of LiCoO₂ from the Scherrer equation strongly depended on the annealing temperature. The crystallite size was confirmed by SEM and TEM measurements. Raman shifts of the A_1g and E_g modes for nanocrystalline LiCoO₂ exhibited a broadening and a frequency shift according to the crystallite size. While the frequency shift could be ascribed to a structural strain at the surface, the broadening was due to the phonon confinement effect produced by narrow crystal boundaries.     

Phonon–phonon interactions in Ce0.85Gd0.15O2−δ nanocrystals studied by Raman spectroscopy

Phonon–phonon interactions and phase stability of Gd‐doped ceria nanocrystals were examined over the temperature range 293–1100 K by Raman spectroscopy. The phonon confinement model (PCM) based on size, inhomogeneous strain and anharmonic effects was used to properly describe the anharmonic interactions in this system. The interplay between size and anharmonic effects influenced different phonon decay channels in nano grains than in larger grains. After the gradual cooling down to room temperature (RT), the Raman study revealed the phase separation in this system pointing to the phase instability of Ce_0.85Gd_0.15O_2−δ nanocrystals after heat treatment. The concentration of extrinsic (intrinsic) oxygen vacancies was also studied by Raman spectroscopy during the heat treatment of the Ce_0.85Gd_0.15O_2−δ nanocrystalline sample. Copyright © 2009 John Wiley & Sons, Ltd.     

Effect of magnetic annealing on phonon behaviors of nanocrystalline BiFeO3

Influence of magnetic annealing at 823 K up to 10 T (T) on the phonon behaviors of nanocrystalline BiFeO₃ was investigated by Raman spectroscopy. The frequencies of fundamental Raman modes increase obviously with increasing annealing magnetic field, and the intensity of the 1260 cm⁻¹ two-phonon mode decreases. The pronounced anomalies of Raman phonon modes under magnetic annealing are attributed to the change of the spin-phonon coupling due to the modulation of spiral spin order. Furthermore, the temperature dependence of Raman peak positions, for the two prominent modes (147 and 176 cm⁻¹), show no notable anomaly around T_N except the sample annealed under 10 T magnetic field; meanwhile, in this sample, another obvious phonon anomaly occurs at ∼150 K (another magnetic phase transition point), which indicate that stronger magnetic annealing with 10 T intensely enhances the spin-phonon coupling, and possibly increases magnetoelectric coupling of nanocrystalline BiFeO₃ due to severely modulation of spiral spin order.     

Influence of phonon confinement,surface stress,and zirconium doping on the Raman vibrational properties of anatase TiO2 nanoparticles

We present a comprehensive analysis of the Raman spectra of pure and zirconium‐doped anatase TiO₂ nanoparticles. To account for the wavenumber shifts of the E_g(ν₆) mode as a function of particle size (L) and dopant concentration (x), a modification of the standard phonon confinement model (PCM) is introduced, which takes into account the contribution of surface stress by means of the Laplace–Young equation. Together with X‐ray diffraction (XRD) and transmission electron microscopy data, our analysis shows that the surface stress contribution to the observed blue shift of the Raman wavenumber is of the same magnitude as the spatial phonon confinement effect. Annealing experiments show that Zr‐doped nanoparticles exhibit retarded grain growth and delayed anatase‐to‐rutile phase transition by up to 200 K compared to pure anatase TiO₂. XRD shows that Zr doping leads to a unit cell expansion of the anatase structure. Applying the modified PCM to the x‐dependent variations of the E_g(ν₆) Raman mode, the mode‐Grüneisen parameter is found to increase abruptly at x > 0.07 with a concomitant mode softening. This coincides with the x range over which the Zr cations are reported to be displaced from their position in the tetrahedral lattice, and where Zr precipitation occurs upon annealing. The results have implications for the interpretation of Raman spectra of ionic metal oxide nanoparticles and how these are modified upon cation doping. Copyright © 2011 John Wiley & Sons, Ltd.     

Quantitative analysis of the phonon confinement effect in arbitrarily shaped Si nanocrystals decorated on Si nanowires and its correlation with the photoluminescence spectrum

Arrays of single‐crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) are grown by a metal‐assisted chemical etching process using silver (Ag) as the noble metal catalyst. The metal‐assisted chemical etching‐grown Si NWs exhibit strong photoluminescence (PL) emission in the visible and near infrared region at room temperature. Quantum confinement of carriers in the Si NCs is believed to be primarily responsible for the observed PL emission. Raman spectra of the Si NCs decorated on Si NWs exhibit a red shift and an asymmetric broadening of first‐order Raman peak as well as the other multi‐phonon modes when compared with that of the bulk Si. Quantitative analysis of confinement of phonons in the Si NCs is shown to account for the measured Raman peak shift and asymmetric broadening. To eliminate the laser heating effect on the phonon modes of the Si NWs/NCs, the Raman measurement was performed at extremely low laser power. Both the PL and Raman spectral analysis show a log‐normal distribution for the Si NCs, and our transmission electron microscopy results are fully consistent with the results of PL and Raman analyses. We calculate the size distribution of these Si NCs in terms of mean diameter (D₀) and skewness (σ) by correlating the PL spectra and Raman spectra of the as‐grown Si NCs decorated on Si NWs. Copyright © 2015 John Wiley & Sons, Ltd.     

Experimental assessment of the phonon confinement in TiO2 anatase nanocrystallites by Raman spectroscopy

TiO₂ aerogels prepared by sol‐gel method and followed by supercritical drying have been annealed at temperatures ranging between 400 and 550 °C. The obtained TiO₂ anatase crystallites with the mean size between 6.4 and 13.9 nm, as obtained from transmission electron microscopy measurements, have been further investigated by Raman spectroscopy. It was found that the peak position and full width at half maximum (FWHM) of the TiO₂ anatase Raman bands located around 144, 398, and 638 cm⁻¹ are influenced by crystallite dimension. These spectral changes can be assigned to the combined action of several nanosize effects such as phonon confinement, phonon coupling, strain, and stoichiometry defects. Surprisingly, the best discrimination of the FWHM change with the nanocrystallite mean size was achieved for the 638 cm⁻¹ band, whereas the best discrimination for the peak position was found for the 398 cm⁻¹ band. The critical size values obtained from the peak position and FWHM evaluation were between 12.7 and 13.1 nm. Taking into consideration that only the phonon confinement and inhomogeneous strain can induce an asymmetric broadening of the Raman signal, the bands asymmetry was evaluated, and the critical size values of the nanocrystallites were determined to be between 10 and 11 nm. For a symmetric size distribution of TiO₂ anatase crystallites with dimensions between 6.4 and 13.9 nm, the obtained result indicates that the phonon confinement contribution to the overall size effects is more than 75%. No evidence about the influence of the phonon coupling and vacancies on the Raman features was observed. The comparison of the data derived from the experimental analysis with those obtained by applying the theoretical phonon confinement model indicates the necessity of developing an improved phonon confinement model. The asymmetry approach can be applied for a great variety of nanostructures, as a measure of the confinement effect. Copyright © 2011 John Wiley & Sons, Ltd.     

Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering

In this paper, Raman shifts of a-plane GaN layers grown on r-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition (LPMOCVD) are investigated. We compare the crystal qualities and study the relationships between Raman shift and temperature for conventional a-plane GaN epilayer and insertion AlN/AlGaN superlattice layers for a-plane GaN epilayer using temperature-dependent Raman scattering in a temperature range from 83 K to 503 K. The temperature-dependences of GaN phonon modes (A₁ (TO), E₂ (high), and E₁ (TO)) and the linewidths of E₂ (high) phonon peak are studied. The results indicate that there exist two mechanisms between phonon peaks in the whole temperature range, and the relationship can be fitted to the pseudo-Voigt function. From analytic results we find a critical temperature existing in the relationship, which can characterize the anharmonic effects of a-plane GaN in different temperature ranges. In the range of higher temperature, the relationship exhibits an approximately linear behavior, which is consistent with the analyzed results theoretically.     

Preparation and structural characterization of nanocrystalline SnO2 powders

Nanocrystalline SnO₂ powders have been prepared by solid–liquid reaction and solid-state thermal oxidizing techniques. The microstructures and phase compositions of the product were characterized by thermogravimetry analysis, X-ray diffraction, and the Raman spectrum. It is shown that at least two phases, SnO₂ and SnO_x, coexist at 450 °C. However, only the tetragonal rutile structure SnO₂ phase is detected after the Sn powders were annealed at 550 °C. The Raman peaks of the nanocrystalline SnO₂ powders reveal remarkable red shift and broadening, which could be attributed to the phonon confinement effect, oxygen vacancies, and the stress effect. PACS 81.07.Wx; 81.10.Jt; 78.30.-j