Application of ETV-ICPMS in semiconductor process control

Submicron semiconductor manufacturing requires ultra-clean processes and materials to achieve high product yields. It is demonstrated that electrothermal evaporation (ETV) in a graphite furnace coupled with ICPMS offers a new possibility for a fast simultaneous analysis of eight elements with detection limits below 0.2 ng/g in conc. hydrofluoric acid and buffered oxide etch (ammonium fluoride/hydrogen fluoride mixture). ETV-ICPMS also comprises significant improvements in the analysis of metal contamination on silicon wafer surfaces with respect to currently used methods. The contaminants on the surface are usually analyzed by total reflexion X-ray fluorescence spectrometry (TXRF) or dissolved by HF vapour (vapour phase decomposition; VPD) or a mixture of hydrofluoric acid and hydrogen peroxide (droplet surface etching, DSE) and analyzed by GFAA or TXRF. ETV-ICPMS combines the advantages of both analytical methods: the multielemental advantage of TXRF and the possibility to analyze light elements like Al, Mg, Na which may not be analyzed by TXRF. With VPD/DSE-ETV-ICPMS detection limits between 0.2 and 2×10⁹ atoms cm^?2 on a 6″ wafer have been achieved in a simultaneous analysis of eight elements. The main advantage of ETV-ICPMS versus conventional ICPMS in both applications — chemical and surface analysis — is its capability to analyze Fe in the sub-ng/g range. As Fe is one of the most important impurities in semiconductor manufacturing ETV-ICPMS is much more useful for semiconductor applications than low-resolution ICPMS. For the present application potassium iodide was used as a modifier. It enhances the sensitivity by a factor of 3–4 and improves the reproducibility significantly.     

Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology

The development of transistor manufacturing into the nanoscale regime is accompanied by a continuous awareness concern for contamination control. The ever-increasing demands for analysis sensitivity (in the sub-10⁹ at/cm² regime) combined with the introduction of new materials (i.e. non-silicon based) put severe challenges on the application of analytical techniques for atomic level contamination monitoring. Since many years, total reflection X-ray fluorescence spectrometry (TXRF) has developed as a preferred technique, ideally suitable due to the excellent reflectivity and flatness of the starting Si substrates. Driven by performance enhancement requirements, many new materials are being introduced at the substrate level (Ge, III/V compounds for higher mobility), gate stack (alternative dielectric materials and gate electrodes for capacitance scaling) and interconnect level (low-k and copper for faster switching). This paper reviews some recent developments in the state-of-the-art TXRF developments for semiconductor applications. Among the focus areas are the expansion of the elemental range (through multi-excitation line selection or multi-excitation source to excite low Z as well as high Z elements in one analysis sweep) and dynamic range (by pre-concentration techniques, synchrotron radiation analysis and detector developments). Further, emphasis is also focused towards quantification issues—whereby the three methodologies (micro-droplet, film and bulk type standards) are critically reviewed. Also, a recent development of sweeping TXRF, suitable for fast screening of large surface areas is being discussed. The applications of TXRF in a semiconductor environment are being reviewed. Finally, the performance of TXRF for the various semiconductor applications is assessed with respected to competitive techniques.     

Calibration of reference materials for total-reflection X-ray fluorescence analysis by heavy ion backscattering spectrometry

Total-reflection X-ray fluorescence (TXRF) is widely used for the control of metallic contamination caused by surface preparation processes and silicon materials. At least three companies supply a variety of TXRF systems to the silicon integrated circuit (IC) community, and local calibration of these systems is required for their day to day operation. Differences in local calibration methods have become an issue in the exchange of information between IC manufacturers' different FABs (Fabrication Facility) and also between silicon suppliers and IC FABs. The question arises whether a universal set of fluorescence yield curves can be used by these different systems to scale system sensitivity from a single element calibration for calculation of elemental concentrations. This is emphasized by the variety of experimental conditions that are reported for TXRF data (e.g. different angles of incidence for the same X-ray source, different X-ray sources, etc.). It appears that an instrumental factor is required. We believe that heavy ion backscattering spectrometry (HIBS) provides a fundamental method of calibrating TXRF reference materials, and can be used in calculating this instrumental factor. In this paper we briefly describe the HIBS system at the Sandia National Laboratories HIBS User Facility and its application to the calibration of TXRF reference materials. We will compare HIBS and TXRF mapping capabilities and discuss the issues associated with the restrictions of some older TXRF sample stages. We will also discuss Motorola's cross-calibration of several TXRF systems using different elements as references.     

Detection of metallic trace impurities on Si(100) surfaces with total reflection X-ray fluorescence (TXRF)

Summary The physical principles and analytical capabilities of TXRF are discussed and compared to other surface sensitive techniques. Metallic trace impurities on silicon surfaces are readily identified with detection limits down to 10¹¹ atoms/cm² (10^–4 monolayers). Other advantages are simple sample preparation and the possibility of analyzing insulating layers without charging problems. The method has been applied to quantify coverages of Fe, Ni, Cu and Au on Si(100) surfaces, deposited from intentionally doped solutions (NH₃/H₂O₂ and HF/NH₄F). It turns out that certain metal/solution combinations cause large surface coverages on the silicon wafer, even if the metal concentration in the solution is very low (g/kg range).

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Nachweis von metallischen Spurenverunreinigungen an Si(100)-Oberflächen mit der Totalreflexions-Röntgenfluorescenzanalyse (TXRF)

     

Ultra-clean Si(111) and Si(001) Surfaces Prepared by Advanced Wet Chemical Cleaning

Wet chemical cleaning of silicon is a critical step, e.g., pre-gate clean, in the semiconductor manufacturing^[1]. For example, pre-gate oxide cleaning demands ultra-clean silicon surface with least surface roughness. It is well known that metallic infinities and roughness cause the lower breakdown voltage in gate dielectric^[2]. It has stringent requirements for ultra-clean and atomically flat silicon surface as the thickness of gate oxide is decreasing. In the present work, we have extended our study on Si(100) surface13] and extensively investigated wet chemical cleaning of Si(111) and Si(100) surfaces in NH₄F-based solutions by using scanning tunneling microscopy (STM), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS) and total reflection X-ray fluorescence spectrometry (TXRF). Surface roughness, organic contamination, metallic impurities and surface termination on the silicon surfaces after wet chemical cleaning with various NH₄F-based solutions have been determined and compared with those treated with RCA cleans, HF solutions and other industrially used solutions. Our results indicate that ultra-clean and smooth Si(111) and Si(001) surfaces are obtained by treatment with NH4F-based solutions.     

Semiconductor applications of nanoliter droplet methodology with total reflection x-ray fluorescence analysis

In this study, the nanoliter dried spot method was applied to semiconductor contamination analysis to enhance vapor phase decomposition processes with total reflection X-ray fluorescence detection. Nanoliter-sized droplets (10 and 50 nl) were deposited onto native silicon oxide wafer surfaces in a clean room environment from both single and multielemental standards containing various concentrations of iron in different matrices. Direct comparisons were made to droplets formed by conventional VPD with similar iron standards. Nanoliter dried spots could be reproducibly deposited and dried in air with typical drying times ranging from 20 s to 2 min depending on the nanoliter volume deposited, compared to VPD spots which have drying times ranging from tens of minutes to several hours. Both types of residues showed a linear relationship between Fe intensity and mass deposited. Variable angle experiments showed that both nanoliter and VPD deposits of single element standards were film-like in character, while residues formed from much more complex matrices and higher mass loadings were particulate in character. For the experimental conditions used in this study (30 kV, 100 mA), typical TXRF spectral Fe limits of detection were calculated to be on the order of picograms or ∼1×10¹⁰ atoms/cm² for a 0.8 cm² X-ray excitation beam area for both nanoliter dried spots and VPD spots prepared from single elemental standards. Calculated Fe detection limits for 200 mm diameter silicon wafers used in this study were in the ∼1×10⁸ atoms/cm² range. By using nanoliter sized droplets, the required sample volume is greatly reduced resulting in higher sample throughput than with conventional VPD methods.     

Determination of some refractory elements and Pb by fluorination assisted electrothermal vaporization inductively coupled plasma mass spectrometry with platform and wall vaporization

Platform and wall vaporization for electrothermal vaporization (ETV)-inductively coupled plasma mass spectrometry (ICP-MS) determination of some refractory elements (Ti, V, Cr, Mo, La and Zr) and Pb were comparatively studied with the use of poly (tetrafluoroethylene) (PTFE) as fluorinating reagent. The factors affecting the vaporization behaviors of the target analytes in the platform and tube wall vaporization including vaporization temperature and time, pyrolytic temperature and time were studied in detail, and the flow rates of carrier gas/auxiliary carrier gas, were carefully optimized. Under the optimal conditions, the signal profiles, signal intensity, interferences of coexisting ions and analytical reproducibility for wall and platform vaporization ETV-ICP-MS were compared. It was found that both wall and platform vaporization could give very similar detection limits, but the platform vaporization provided higher signal intensity and better precision for some refractory elements and Pb than the wall vaporization. Especially for La, the signal intensity obtained by platform vaporization was 3 times higher than that obtained by wall vaporization. For platform vaporization ETV-ICP-MS, the limits of detection (LODs) of 0.001 μg L⁻¹ (La) ~ 0.09 μg L^− 1 (Ti) with the relative standard deviations (RSDs) of 1.5% (Pb) ~ 15.5% (Zr) were obtained. While for wall vaporization ETV-ICP-MS, LODs of 0.005 μg L^− 1 (La) ~ 0.4 μg L^− 1 (Pb) with RSDs of 3.2% (Mo) ~ 12.8% (Zr) were obtained. Both platform and tube wall vaporization techniques have been used for slurry sampling fluorination assisted ETV-ICP-MS direct determination of Ti, V, Cr, Mo, La, Zr and Pb in certified reference materials of NIES No. 8 vehicle exhaust particulates and GBW07401 soil, and the analytical results obtained are in good agreement with the certified values.     

Applications of total reflection X-ray fluorescence spectrometry in trace element and surface analysis

Total reflection X-ray fluorescence spectrometry (TXRF) is presented as a genuine surface analytical technique. Its low information depth is shown to be the characteristic feature differentiating it from other energy dispersive X-ray fluorescence methods used for layer and surface analysis. The surface sensitivity of TXRF and its analytical capability together with the limitations of the technique are discussed here using typical applications including the contamination control of silicon wafers, thin layer analysis and trace element determination. For buried interfaces and implantation depth profiles in silicon a combination of TXRF and other techniques has been applied successfully. The TXRF method has the particular advantage of being calibrated without the need for standards. This feature is demonstrated for the example of the element arsenic.     

Determination of metallic contaminants on Ge wafers using direct- and droplet sandwich etch-total reflection X-ray fluorescence spectrometry

An analysis methodology for the metallic contamination control of Ge wafer substrates has been developed and evaluated for six elements (K, Ca, Cr, Fe, Ni and Zn). Detection limits (DL) of Direct-total reflection X-ray fluorescence spectrometry (D-TXRF) analysis on Ge wafers have been determined and found to be at the E10 at/cm² level. The values have been found to be a factor between 1 and 3 higher than on Si wafers, exclusively caused by differences in the background intensity. Additionally, a preconcentration procedure based on the Droplet sandwich etch (DSE) method has been developed. This method relies on the transfer of the surface and subsurface contaminants from the wafer to the liquid phase by wet chemical etching. Application of the DSE method on reference Ge wafers followed by analysis of the etch liquid by TXRF resulted in recovery rates (RR) of 40%. In an optimization study, it was found that the main DSE method parameters had limited influence on the RR. However, a detection efficiency study clearly demonstrated an underestimation by the TXRF analysis. An independent analysis for Ca, Cr, Fe and Zn by GF-AAS resulted in RR varying at approximately 100%. By internal standardization with the element La for the TXRF analysis, recovery rates could be increased to the 60% level. This underestimation by TXRF may find an origin in a matrix effect caused by the Ge etch products. By application of the developed DSE-TXRF method, DL at the E9 at/cm² level could be realized, with values, which are at least one order of magnitude lower compared to the DL of D-TXRF on Ge wafers.     

Trace metal analysis on hafnium silicate deposited Si wafer by Total Reflection X-ray Fluorescence

Hafnium silicate is a so-called high-k material, which is a new key material in the semiconductor field. This material is difficult to analyze by a conventional W-Lβ1TXRF source due to the high background originating from Hf-Lα lines. In this paper, the capability of Ir source TXRF analysis on hafnium silicate films is investigated with intentional contamination of Ti, Cr, Fe, Ni and Cu elements. The spectral fitting is discussed where X-ray resonant Raman scattering and escape peak of Ir-Lα overlap with Ni-Kα peak. The detection limits are estimated to 0.9 × 10¹⁰ to 2 × 10¹⁰ atoms/cm² for the transition metals.     

Trace analysis for 300 mm wafers and processes with total reflection X-ray fluorescence

Total reflection X-ray fluorescence (TXRF) is essential for 300-mm silicon wafer production and fabrication of semiconductor devices. The 300-mm TXRF enables non-destructive contamination analysis on wafers for process development and process control. The TXRF system shows a very stable continuous operation, which allows accurate trace and ultra trace analysis on the silicon surface. It is equipped with two excitation sources covering the requirements of very sensitive measurement and wide element range. The TXRF is a key technology for contamination control during wafer reclaim. For this purpose we show that the system is able to examine the wafers during different processing states of reclaim. The system sensitivity is influenced by the surface of the wafer. For important processing steps, e.g. double side polishing, the sensitivity is as good as for measurements on hazefree polished wafers. We show with TXRF that cross-contamination with copper during double side polishing is suppressed.     

Trace determination of iron on a silicon wafer surface by silicon direct bonding and neutron activation analysis

In order to determine iron on silicon wafer surface at a level of 10¹⁴ atoms·m^–2 the efficiency of a well-type Ge detector for⁵⁹Fe -ray emissions was measured and a low temperature silicon direct bonding technique was developed. With silicon direct bonding at a temperature of 350 to 650°C iron remains near the interface of the bound silicon. The iron contamination of the interface escaped from the interface can be ignored with this technique. The value of iron obtained was (2.7 to 5.9)·10¹⁴ atoms · m^–2 in the surface on silicon wafers.     

A modified supported bilayer/diblock polymer--working towards a tunable coating for capillary electrophoresis

A surfactant bilayer/diblock polymer coating was previously developed for the separation of proteins. The coating consisted of a mixture of the cationic surfactant dioctadecyldimethylammonium bromide (DODAB) and the neutral polymer poly-oxyethylene (POE) 40 stearate (Journal of Chromatography A 1130 (2006) 265–271). Herein an improved method of generating DODAB/POE stearate coatings is demonstrated, which yields more predictable EOF, more stable coatings, greater average efficiencies and easier method development. In this sequential preparation method the DODAB is first flowed through the capillary, followed by a flow of the POE stearate (sequential method). A tunable EOF (−2.40 to −0.17 × 10⁻⁴ cm²/Vs) is achieved by varying the POE chain length (8, 40 and 100 oxyethylene units). Mixtures of POE 8 and POE 40 stearate enabled continuous variation in EOF from −2.44 to −0.42 × 10⁻⁴ cm²/Vs. Separations of basic proteins yielded efficiencies of 760 000–940 000 plates/m. Coatings formed using the sequential method were more stable over a larger number of runs (%RSD for migration times: 0.7–1.0% over 30 runs) than those formed using the original mixed method (%RSD: 2.4–4.6% over 14 runs). The ability to tune the EOF is important in maximizing the resolution of analytes with similar electrophoretic mobilities. Histone proteins are separated on a sequentially coated capillary with resolution of nine possible subtypes. Acidic proteins are separated on a sequentially coated capillary at pH 6.4.     

Novel methods of TXRF analysis for silicon wafer surface inspection

TXRF became a standard, on-line inspection tool for controlling the cleanliness of polished Si wafers for semiconductor use. Wafer makers strive for an all-over metallic cleanliness of < 10¹⁰ atoms · cm^–2. The all-over cleanliness can be analyzed using VPD/TXRF. For VPD preparation and scanning we have developed an automatic system coupled with TXRF. With synchrotron radiation TXRF we were able to detect 13 fg of Ni in a residual microdroplet, i.e.10⁵ atoms · cm^–2. Received: 8 January 1998 / Revised: 13 July 1998 / Accepted: 30 July 1998     

Thin film characterization by total reflection x-ray fluorescence

Sensitive and accurate characterization of films thinner than a few nm used in nanoelectronics represents a challenge for many conventional production metrology tools. With capabilities in the 10¹⁰ at/cm², methods usually dedicated to contamination analysis appear promising, especially Total-reflection X-Ray Fluorescence (TXRF). This study shows that under usual configuration for contamination analysis, with incident angle smaller than the critical angle of the substrate, TXRF signal saturation occurs very rapidly for dense films (below 0.5 nm for HfO₂ films on Si wafers using a 9.67 keV excitation at 0.5°). Increasing the incident angle, the range of linear results can be extended, but on the other hand, the TXRF sensitivity is degraded because of a strong increase of the measurement dead time. On HfO₂ films grown on Si wafers, an incident angle of 0.32° corresponding to a dead time of 95% was used to achieve linear analysis up to 2 nm. Composition analysis by TXRF, and especially the detection of minor elements into thin films, requires the use of a specific incident angle to optimize sensitivity. Although quantitative analyses might require specific calibration, this work shows on Co–based films that the ratio between minor elements (W, P, Mo) and Co taking into account their relative sensitivity factors is a good direct reading of the composition.     

Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry (VPD–DC–TXRF) for metallic contamination analysis towards Ge substrates. A first step that asked for adaptation was the collection chemistry as the Ge wafers surface is not hydrophobic after the VPD treatment. The contact angle could be significantly increased using a concentrated HCl solution. This chemistry has been proved to perform well in the collection of metals from intentionally contaminated Ge wafers. A second step that needed optimization was the matrix removal method as a sample preparation step prior to the TXRF analysis. First, the upper limits of TXRF on Ge containing solutions have been characterized. The accuracy of TXRF is found to be acceptable for Ge contents lower than 1×10¹⁴ atoms (250 ppb in 50 μL) but decreases systematically with higher Ge contents. Fortunately, Ge can be volatilized at low temperatures as GeCl₄ by the addition of HCl. The parameters within this method have been investigated with respect to the removal of Ge and the recovery of metal traces. Finally, the full VPD–DC–TXRF method has been applied on intentionally contaminated Ge wafers and proved to be very accurate.     

CdSe quantum dots capped PAMAM dendrimer nanocomposites for sensing nitroaromatic compounds

The detection of nitroaromatic compounds, best known as raw materials in explosives preparations, is important in many fields including environmental science, public security and forensics. CdSe quantum dots capped with PAMAM-G₄ dendrimer were synthetized in water and used for the detection of trace amounts of three nitroaromatic compounds: 4-methoxy-2-nitrophenol (MNP), 2-amine-5-chloro-1,3-dinitrobenzene (ACNB) and 3-methoxy-4-nitrobenzoic acid (MNB). To increase the apparent water solubility of these compounds α-cyclodextrin (α-CD) was used to promote the formation of inclusion complexes. The studied nitroaromatic compounds (plus α-CD) significantly quenched the fluorescence intensity of the nanocomposite with linear Stern-Volmer plots. The Stern-Volmer constants (standard deviation in parenthesis) were: MNB, K_SV = 65(5) × 10⁴ M⁻¹; ACNB, K_SV = 19(2) × 10⁴ M⁻¹; and, MNP, K_SV = 33(1) × 10² M⁻¹. These constants suggest the formation of a ground state complex between the nitroaromatric compounds and the sensor which confers a relatively high analytical sensitivity. The detection sensibilities are about 0.01 mg L⁻¹ for MNB and ACNB and about 0.1 mg L⁻¹ for MNP. No interferences or small interferences are observed for trinitrotoluene [K_SV = 10(2) × 10² × M⁻¹], 2,4-dinitrotoluene [K_SV = 20(3) × 10 M⁻¹], 2,6-dinitrotoluene [K_SV = 11(4) × 10 M⁻¹] and nitrobenzene [K_SV = 2(1) × 10³ × M⁻¹].     

Diode laser absorption measurements at the Hα-transition in laser induced plasmas on different targets

The diode laser atomic absorption spectroscopy (DLAAS) technique has been utilized to assess the degree of optical opacity of plasma at the wavelength of the H_α-line. The plasma is produced at atmospheric conditions by focusing a 6 ns Nd:YAG laser pulse at 1.064 μm on different solid target materials including aluminum, iron and titanium as major elements as well as flat pieces of plastic and wood characterized by a high content of hydrogen. The optical depth was investigated as a function of delay times ranging from 0 to 5 μs, and at laser fluences ranging from 7 to 19 J/cm², all at a fixed gate time of 1 μs. The results show that the plasma associated with metallic targets is almost optically thin at the H_α-line over all fluences and at delay times ≥ 1 μs, but rather thick for hydrogen-rich targets (plastic and wood) over all delay times and fluences.     

A novel reusable ionic liquid chemically bonded fused-silica fiber for headspace solid-phase microextraction/gas chromatography-flame ionization detection of methyl tert-butyl ether in a gasoline sample

A novel ionic liquid (IL) bonded fused-sil-ica fiber for headspace solid-phase microextraction (HS-SPME)/gas chromatography-flame ionization detection (GC-FID) of methyl tert-butyl ether (MTBE) in a gasoline sample was prepared and used. The new proposed chemically bonded fiber has better thermal stability and durability than its corresponding physically coated fiber. Another advantage is that no spacer was used for the purpose of bonding the IL to the surface of the fused-silica. The latter advantage makes the preparation of these fibers easier with lower cost than those prepared using sol–gel method. The ionic liquid 1-methyl-3-(3-trimethoxysilyl propyl) imidazolium bis(trifluoromethylsulfonyl) imide was synthesized and cross linked to the surface of the fused-silica fiber. Then, the chemically IL-modified fibers were applied to the headspace extraction of MTBE. The chemically IL-modified fibers showed improved thermal stability at temperatures up to 220 °C relative to the physically IL-modified fibers (180 °C). The chemically bonded IL film on the surface of the fused-silica fiber was durable over 16 headspace extractions without any significant loss of the IL film. The calibration graph was linear in a concentration range of 2–240 μg L⁻¹ (R² = 0.996) with the detection limit of 0.1 μg L⁻¹ level. The reproducibility (RSD %, n = 6) of the new IL bonded fused-silica fiber (8.9%) was better than the physically coated fiber (12%) suggesting that the proposed chemically IL-modified fiber is more robust than the physically IL-modified fiber. The optimum extraction conditions were the followings: 40 °C extraction temperature, 12 min extraction time, 30 s desorption time and sample agitation at 200 rpm.     

Speciation of copper and zinc in size-fractionated atmospheric particulate matter using total reflection mode X-ray absorption near-edge structure spectrometry

The health effects of aerosol depend on the size distribution and the chemical composition of the particles. Heavy metals of anthropogenic origin are bound to the fine aerosol fraction (PM_2.5). The composition and speciation of aerosol particles can be variable in time, due to the time-dependence of anthropogenic sources as well as meteorological conditions. Synchrotron-radiation total reflection X-ray fluorescence (SR-TXRF) provides very high sensitivity for characterization of atmospheric particulate matter. X-ray absorption near-edge structure (XANES) spectrometry in conjunction with TXRF detection can deliver speciation information on heavy metals in aerosol particles collected directly on the reflector surface. The suitability of TXRF-XANES for copper and zinc speciation in size-fractionated atmospheric particulate matter from a short sampling period is presented. For high size resolution analysis, atmospheric aerosol particles were collected at different urban and rural locations using a 7-stage May cascade impactor having adapted for sampling on Si wafers. The thin stripe geometry formed by the particulate matter deposited on the May-impactor plates is ideally suited to SR-TXRF. Capabilities of the combination of the May-impactor sampling and TXRF-XANES measurements at HASYLAB Beamline L to Cu and Zn speciation in size-fractionated atmospheric particulate matter are demonstrated. Information on Cu and Zn speciation could be performed for elemental concentrations as low as 140 pg/m³. The Cu and Zn speciation in the different size fraction was found to be very distinctive for samples of different origin. Zn and Cu chemical state typical for soils was detected only in the largest particles studied (2–4 μm fraction). The fine particles, however, contained the metals of interest in the sulfate and nitrate forms.