Sweeping total reflection X-ray fluorescence optimisation to monitor the metallic contamination into IC manufacturing

Among the methods available on the market today to control as metallic contamination in integrated circuit manufacturing, Sweeping Total reflection X-ray Fluorescence mode appears a very good method, providing fast and entire wafer mapping. With the goal of a pertinent use of Sweeping Total reflection X-ray Fluorescence in advanced Integrated Circuit manufacturing this work discusses how acceptable levels of contamination specified by the production (low levels to be detected) can be taken into account.     

Development of vapor phase decomposition-total-reflection X-ray fluorescence spectrometer

A total reflection X-ray fluorescence spectrometer integrated with vapor phase decomposition, VPD-TXRF, was newly developed. This instrument was designed to achieve a minimum footprint, to avoid cross contamination during operation, and to protect people and instruments from HF gas. Comparisons between analysis by VPD-TXRF and by atomic absorption spectrometry (AAS) indicated very good agreement in a wide range, from 10⁸ to 10¹² atoms/cm². The lower limits of detection (LLDs) were improved by two orders of magnitude compared with straight TXRF. For 300-mm Si wafers, the LLDs were 5×10⁸ atoms/cm² and 1×10⁷ atoms/cm² for Al and Ni, respectively. VPD-TXRF was able to perform ultra-trace analysis at the level of 10⁸ atoms/cm².     

Feasibility study of SR‐TXRF‐XANES analysis for iron contaminations on a silicon wafer surface

The ability to chemically characterize the contamination on silicon wafers is of critical importance to the semiconductor industry. It provides information on possible unwanted chemical processes taking place on the wafer surface and helps in determining the true source of the contamination problem. This type of information is not readily accessible with standard laboratory equipment. Synchrotron radiation‐induced total reflection X‐ray fluorescence (SR‐TXRF) was combined with X‐ray absorption near‐edge structure (XANES) to determine the chemical state of Fe contaminations on a silicon wafer surface. Main purpose of the study was to test the method for a contamination issue as it could appear in a microelectronic VLSI production fab. Copyright © 2008 John Wiley & Sons, Ltd.     

Optimizing total reflection X-ray fluorescence for direct trace element quantification in proteins I: Influence of sample homogeneity and reflector type

Total reflection X-ray fluorescence (TXRF) is a very promising method for the direct, quick and reliable multi-elemental quantification of trace elements in protein samples. With the introduction of an internal standard consisting of two reference elements, scandium and gallium, a wide range of proteins can be analyzed, regardless of their salt content, buffer composition, additives and amino acid composition. This strategy also enables quantification of matrix effects. Two potential issues associated with drying have been considered in this study: (1) Formation of heterogeneous residues of varying thickness and/or density; and (2) separation of the internal standard and protein during drying (which has to be prevented to allow accurate quantification). These issues were investigated by microbeam X-ray fluorescence (μXRF) with special emphasis on (I) the influence of sample support and (II) the protein / buffer system used. In the first part, a model protein was studied on well established sample supports used in TXRF, PIXE and XRF (Mylar, siliconized quartz, Plexiglas and silicon). In the second part we imaged proteins of different molecular weight, oligomerization state, bound metals and solubility.     

A wavelength-dispersive arrangement for wafer analysis with total reflection X-ray fluorescence spectrometry using synchrotron radiation

Currently, the only apparent means to enhance the detection power of the TXRF technique would be to increase the intensity of the primary beam. Using synchrotron radiation, the most powerful X-ray source available, unfortunately, not only the fluorescence signal of the contaminant elements is increased, but also in equal measure, the intensities of the Si–K radiation from the wafer together with the scattered radiation. This results in an overloading of the energy-dispersive Si (Li) detector systems used hitherto, with the effect that the available primary intensity cannot be fully exploited. Wavelength-dispersive systems are free of such problems; they generate less detector background and can withstand higher count rates. Due to their small angle of acceptance, however, their detection efficiency is quite low. In this contribution we propose a wavelength-dispersive TXRF solution, which is optimized with regard to higher efficiency on the basis of large area multilayer mirrors in combination with a position-sensitive detector. The count rates in relation to energy-dispersive instruments and the energy resolution of the new system have been calculated using ray-tracing techniques.     

Applications of total reflection X-ray fluorescence spectrometry in trace element and surface analysis

Total reflection X-ray fluorescence spectrometry (TXRF) is presented as a genuine surface analytical technique. Its low information depth is shown to be the characteristic feature differentiating it from other energy dispersive X-ray fluorescence methods used for layer and surface analysis. The surface sensitivity of TXRF and its analytical capability together with the limitations of the technique are discussed here using typical applications including the contamination control of silicon wafers, thin layer analysis and trace element determination. For buried interfaces and implantation depth profiles in silicon a combination of TXRF and other techniques has been applied successfully. The TXRF method has the particular advantage of being calibrated without the need for standards. This feature is demonstrated for the example of the element arsenic.     

Analysis of nutrition-relevant trace elements in human blood and serum by means of total reflection X-ray fluorescence (TXRF) spectroscopy

In clinical service laboratories, one of the most common analytical tasks with regard to inorganic traces is the determination of the nutrition-relevant elements Fe, Cu, Zn, and Se.     

Matrix effect on the detection limit and accuracy in total reflection X-ray fluorescence analysis of trace elements in environmental and biological samples

The effect of matrix contents on the detection limit of total reflection X-ray fluorescence analysis was experimentally investigated using a set of multielement standard solutions (500 ng/mL of each element) in variable concentrations of NH₄NO₃. It was found that high matrix concentration, i.e. 0.1–10% NH₄NO₃, had a strong effect on the detection limits for all investigated elements, whereas no effect was observed at lower matrix concentration, i.e. 0–0.1% NH₄NO₃.     

Total reflection X-ray fluorescence and energy-dispersive X-ray fluorescence analysis of runoff water and vegetation from abandoned mining of Pb–Zn ores

The present work reports on the heavy metal content: Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Cd and Pb in running waters and vegetation around abandoned mining areas. Two species of mosses (Dicranum sp. and Pleurocarpus sp.) and three different species of wild grass (Bromus sp., Rumex sp. and Pseudoavena sp.) growing on the surrounding areas of old lead–zinc mines (Aran Valley, Pyrenees, NE Spain) have been analyzed. Both water and vegetation were collected in two different sampling places: (a) near the mine gallery water outlets and (b) on the landfill close to the abandoned mineral concentration factories. For the heavy metal content determination, two different techniques were used: total reflection X-ray fluorescence for water analysis and energy-dispersive X-ray fluorescence for vegetation study. Surface waters around mine outlets exhibit anomalous content of Co, Ni, Zn, Cd. Stream waters running on mining landfills exhibit higher Cu, Zn, Cd and Pb than those of the waters at the mine gallery outlets. The results allow us to assess the extent of the environmental impact of the mining activities on the water quality. The intake of these elements by vegetation was related with the sampling place, reflecting the metal water content and the substrate chemistry. Accumulation of metals in mosses is higher than those exhibited in wild grasses. Furthermore, different levels of accumulation were found in different wild grass. Rumex sp. presented the lowest metal concentrations, while Pseudoavena sp. reported the highest metal content.     

Coupling of an electrodialyzer with inductively coupled plasma mass spectrometry for the on-line determination of trace impurities in silicon wafers after surface metal extraction

Understanding the properties that determine the distribution and behavior of trace impurities in Si wafers is critical to defining and controlling the performance, reliability, and yields of integrated microelectronic devices. It remains, however, an intrinsically difficult task to determine trace impurities in Si because of the minute concentrations and extremely high levels of matrix involved. In this study, we used an electrodialyzer for the simultaneous on-line removal of the silicate and acid matrices through the neutralization of the excessive hydrogen ion and selectively separation of acid and silicate ions by the combination of electrode reaction as a source of hydroxide ions with the anion exchange membrane separation. To retain the analyte ions in the sample stream, we found that the presence of moderate amounts of nitric acid and hydrazine were necessary to improve the retention efficiency, not only for Zn²⁺, Ni²⁺, Cu²⁺, and Co²⁺ ions but also for CrO₄²⁻ ion. Under the optimized conditions, the interference that resulted from the sample matrix was suppressed significantly to provide satisfactory analytical signals. The precision of this method was ca. 5% when we used an electrodialyzer equipped with an anion exchange membrane to remove the sample matrix prior to performing inductively coupled plasma mass spectrometry (ICP-MS); the good agreement between the data obtained using our proposed method and those obtained using a batchwise wet chemical technique confirmed its accuracy. Our method permits the determination of Zn, Ni, Cu, Co, and Cr in Si wafers at detection limits within the range from 2.2 × 10¹⁵ to 9.0 × 10¹⁵ atoms cm⁻³.     

Discriminant analysis of trace elements in normal,benign and malignant breast tissues measured by total reflection X-ray fluorescence

In this work total reflection X-ray fluorescence spectrometry has been employed to determine trace element concentrations in different human breast tissues (normal, normal adjacent, benign and malignant). A multivariate discriminant analysis of observed levels was performed in order to build a predictive model and perform tissue-type classifications. A total of 83 breast tissue samples were studied. Results showed the presence of Ca, Ti, Fe, Cu and Zn in all analyzed samples. All trace elements, except Ti, were found in higher concentrations in both malignant and benign tissues, when compared to normal tissues and normal adjacent tissues. In addition, the concentration of Fe was higher in malignant tissues than in benign neoplastic tissues. An opposite behavior was observed for Ca, Cu and Zn. Results have shown that discriminant analysis was able to successfully identify differences between trace element distributions from normal and malignant tissues with an overall accuracy of 80% and 65% for independent and paired breast samples respectively, and of 87% for benign and malignant tissues.     

Analysis of low Z elements on Si wafer surfaces with undulator radiation induced total reflection X-ray fluorescence at the PTB beamline at BESSY II

Synchrotron radiation induced TXRF allows the nondestructive investigation of low Z contaminations on Si wafer surfaces at trace levels required by the semiconductor industry. The PTB (Physikalisch Technische Bundesanstalt) U180 undulator beamline at BESSY II, equipped with a plane grating monochromator ensuring an energy resolving power E/ΔE between 500 and 5000, can be operated either in wiggler mode for photon energies up to 1.7 keV to excite Al, Mg and Na efficiently, or in undulator mode, i.e. using one of the first odd U180 harmonics, to obtain intensive low energy radiation below 0.7 keV to excite carbon, nitrogen and oxygen. The specific feature of the beamline is its high spectral purity that allows for fundamental investigations. The TXRF wafer chamber of the Atominstitut was used for the experiments with a sidelooking Si(Li) detector with the wafer arranged vertically to take advantage of the linear polarization for background reduction. The energy dependence of the resonant Raman scattering, which is a limiter for the determination of Al at ultra trace levels excited with energies just below the Si absorption edge was studied as well as the influence of the incidence angle on the Raman peak. Droplet samples containing boron were measured and the detection limit of 3 ng determined. A single Carbon layer (5 nm) and a C–Ni–C multilayer sample on a Si wafer were characterized and it was shown that the thickness and density of these layers could be determined.     

Cold plasma ashing improves the trace element detection of single Daphnia specimens by total reflection X-ray fluorescence spectrometry

The recently developed dry method for the element determination of single freshwater microcrustacean specimens (Daphnia) using total reflection X-ray fluorescence (TXRF) spectrometry showed that inhomogeneities of the biological material on the glass carriers resulted in some cases in high background and hampered the detection of certain trace elements (e.g. Cr, Ni). The aim of this study was to test how inhomogeneities of the biological material can be reduced using cold plasma ashing (CPA) techniques. For that, single specimens of the microcrustacean Daphnia pulex prepared according to the dry method were measured by TXRF before and after CPA. To determine the efficiency of the removal of organic matrix, the background and signal-to-background relationship of 28 samples were analyzed. The results showed (1) a highly significant reduction of the background by CPA fluctuating between 26 and 46% (all elements) and (2) a significant increase of the signal-to-background relationship by the factor 1.5–2.5 (all elements) and a much better detection of Cr, Pb, As and Se. The element concentrations (with exception of Cr, Ni and Pb) after ashing were in the same range or slightly higher than that before ashing. No significant differences between the two treatments were observed for Mn, As, Pb, Se (November), Sr (November), Cr (March) and Pb (March). The element concentration of P, K, Ca, Cu, Zn, Cr (November), Fe and Rb were significantly higher after ashing. In general, they increased by 1.5–13.6% and were highest for Rb (March) and P (November). In contrast, the element concentration of Ni and Cr (only March) decreased significantly after ashing (Ni: 91.6–92.1%, Cr: 91.3%). We recommend the use of CPA for biological material in the microgram-range as a routine method for TXRF analysis, especially when trace elements in minute concentrations are of interest.     

Adaptation of a commercial total reflection X-ray fluorescence system for wafer surface analysis equipped with a new generation of silicon drift detector

Within the framework of a collaborative project, it is shown that commercial total reflection X-ray fluorescence (TXRF) systems used in laboratories can easily be upgraded with a silicon drift detector (SDD). SDDs have advantages when used with fully automatized wafer analyzers working under cleanroom conditions, because no liquid nitrogen is required as they are electrically cooled. The goal of this work was the integration of a KETEK 10 mm² SDD in an ATOMIKA 8030W wafer analyzer with special attention to maintain the high degree of automation of the system. An electronic device was designed to establish communication between the SDD and the TXRF electronic control system. The adapted system was tested and compared with the original setup using an 80 mm² Si(Li) detector. Multielement droplet samples on silicon wafers were analyzed and the results showed two times better detection limits for the Si(Li) detector for 1000 pg Ni in comparison to the SDD. Additionally, a RADIANT 50 mm² SDD (VORTEX) was tested which showed identical detection limits compared to the 80 mm² Si(Li) detector.     

Density–depth profiles of an As‐implanted Si wafer studied by repeated planar sputter etching and total reflection x‐ray fluorescence analysis

The implantation of a high dose of high‐energy ions into an Si wafer causes amorphization of the original monocrystalline structure within a near‐surface layer. The in‐depth distribution of both Si atoms of the wafer and As ions implanted at a dose of 1 × 10¹⁷ ions cm^?2 and an energy of 100 keV is studied. A novel method combining a repeated planar and broad sputter etching with differential weighing, surface analysis by total reflection x‐ray fluorescence and Tolansky interferometry is used for this investigation. Different depth profiles are recorded on the nanometre scale for the concentration defined as the mole ratio of As and Si, for the mass density of the implanted layer and for the number density of As and Si. The results generally correspond with measurements of Rutherford backscattering spectrometry and only deviate when the assumptions made for the mass density do not fit well. An appropriate approach to this quantity involves the number density of implanted ions but, furthermore, considers a variation of the number density of Si atoms during implantation, especially for a high dose and high‐energy implantation. The variation can be taken into account by a factor γ, where γ > 1 indicates compression and γ < 1 indicates extension of the original crystalline structure. For the above mentioned implantation, γ is measured separately for each sublayer to obtain accurate depth profiles. Copyright © 2003 John Wiley & Sons, Ltd.     

Total reflection X-ray fluorescence and grazing incidence X-ray spectrometry — Tools for micro- and surface analysis. A review

A review of Total Reflection X-ray Spectrometry and related methods covering literature of four decades is presented. History, theory, instrumentation, sample preparation, and applications are summarized and some examples are given. New developments and trends are discussed with respect to emerging nano-technologies in all fields of sciences.     

A solid phase extraction procedure for the simultaneous determination of total inorganic arsenic and trace metals in seawater: Sample preparation for total-reflection X-ray fluorescence

In this paper we present a procedure allowing total-reflection X-ray fluorescence spectrometry (TXRF) determinations of arsenic in water samples, especially in seawater samples. The procedure consists of an arsenate reduction step (performed by using a l-cysteine solution) followed by a complexation of As⁺³ with sodium dibenzyldithiocarbamate and solid phase extraction. The new procedure is a modification of a method developed by Prange and allows a simultaneous determination of As together with V, Fe, Ni, Cu, Zn, Pb, and U in seawater by TXRF. The procedure was tested using the Certified Reference Material CASS-4 and was later applied to regular seawater samples collected from the North Sea. The detection limit for arsenic is 10 ng L^− 1.     

Applicability of direct total reflection X-ray fluorescence analysis for selenium determination in solutions related to environmental and geochemical studies

A significant amount of environmental studies related to selenium determination in different environmental compartments have been published in the last years due to the narrow range between the Se nutritious requirement as essential element and toxic effects upon exposure. However, the direct analysis of complex liquid samples like natural waters and extraction solutions presents significant problems related to the low Se concentrations and the complicated matrix of this type of samples.     

Determination of relative sensitivity factors for trace element analysis of solar cell silicon by fast-flow glow discharge mass spectrometry

A commercially available Element GD, the latest generation of glow discharge mass spectrometry (GDMS), has been used for quantitative analysis of impurities in silicon for photovoltaic applications (PV silicon). In order to be able to accurately measure impurities in silicon, relative sensitivity factors (RSFs) need to be determined. These factors are, currently, given only for steel matrices. In this study, standard silicon materials with known levels of impurities have been produced and independent analytical methods have been used for determining the RSFs for silicon matrices. It has been found that the tuning parameters of the Element GD, mainly the discharge gas flow rate, influence the RSF values. In addition, it has been found that RSF values are matrix specific; RSFs for a silicon matrix differ significantly from those for metallic conductor matrices even under identical instrumental parameters. A study of the relative reproducibility in the quantitative analysis of impurities in solar cells silicon has shown variations between 5% and 12%.