砷锗镉晶体的生长和变温霍尔效应研究

采用温度振荡法和改进的布里奇曼法进行了CdGeAs₂多晶合成与单晶生长,生长出ϕ28 mm×65 mm完整无开裂的CdGeAs₂单晶体。用金刚石外圆切割机切割出CdGeAs₂晶片,采用X射线衍射(XRD)和X射线能量色散谱仪(EDS)对合成的多晶粉末和切割出的晶片进行表征。结果表明,合成产物为单相四方黄铜矿结构的CdGeAs₂多晶,晶片的原子百分比接近于理想化学计量比。经傅里叶变换红外分光光度计测试发现,初生长的CdGeAs₂晶体在11.3 μm处的吸收系数为0.117 cm^-1,经过拟合计算得出禁带宽度为0.52 eV。通过变温(110~300 K)霍尔效应测试表明,CdGeAs₂晶体在110~300 K温度范围内都为p型导电,载流子浓度p_H和霍尔系数R_H随温度的升高分别升高和下降,而霍尔迁移率μ_H几乎不变。拟合计算出晶体中受主电离能E_A=0.305 eV,并进一步分析了生长晶体中可能存在的受主缺陷。     

Influence of the nucleation time-lag on the activation energy in non-isothermal crystallization

In the present work, the influence of the nucleation time-lag on the non-isothermal glass crystallization is discussed. Differential thermal analysis (DTA) results of an iron-rich glass nucleated by Cr₂O₃ were obtained at different heating rates. The activation energy of crystallization, E_c, and the Avrami parameter, m, estimated by Kissinger's and Ozawa's equations were shown to be dependent on the heating rate. The value of E_c, obtained at 2.5, 5 and 7.5 K/min heating rates was calculated as 299 kJ/mol, while the value of E_c, obtained at 10, 15 and 20 K/min was as 499 kJ/mol. The value of m for ‘low' and ‘high' heating rates were 2.57 and 1.45, respectively. The results were interpreted on the basis of the non-steady state nature of the nucleation process. It was assumed that at high heating rates no nucleation takes place and the crystals grow on a existing fixed number of nuclei; the activation energy of crystal growth, E_g, can be estimated by applying the Kissinger equations. At low heating rates nucleation occurs and the number of nuclei formed is influenced by the heating rate; E_g can be estimated by the Matusita and Sakka equation.     

First measurements of time-dependent nucleation as a function of composition in Na2O · 2CaO · 3SiO2 glasses

First measurements of the composition dependence of the time-dependent nucleation rate are presented. Nucleation rates of the stoichiometric crystalline phase, Na₂O · 2CaO · 3SiO₂, from quenched glasses made with different SiO₂ concentrations were determined as a function of temperature and glass composition. A strong compositional dependence of the nucleation rates and a weak dependence for the induction times were observed. Using measured values of the liquidus temperatures and growth velocities as a function of glass composition, these data are shown to be consistent with predictions from the classical theory of nucleation, assuming a composition-dependent interfacial energy.     

Amorphization of Al32Ge68 in a slow heating run studied by NMR

Amorphization of Al₃₂Ge₆₈ at normal pressure, starting from the thermobarically quenched high-pressure crystalline metallic γ-phase, was studied in a slow heating run by performing NMR field-sweep experiments. In the temperature interval from 77 to 300 K the ²⁷Al central line exhibits a continuous broadening and a positive frequency shift. Close to 300 K rather abrupt changes were observed, where the shift changed its sign, and the line width jumped to its highest value. The discontinuous course of the phase changes indicates that the amorphization process proceeds via a sequence of intermediate metastable states, which can be ‘overheated’ in a slow heating run and consequently transform in an explosion-like manner to the final amorphous state at a well-defined temperature. The frequency shift could be decomposed into the negative second-order quadrupolar shift and the positive Knight shift. The change of the shift sign from positive to negative at 300 K reflects the vanishing tendency of the Knight shift upon heating and is compatible with the conduction-electron localization upon structure amorphization.     

功能模板导向合成介孔三氧化钨及其光电化学性能

以钨酸(H₂WO₄)为钨前驱体,十二烷胺(DDA)为模板剂,利用模板剂的结构导向功能,合成了比表面积为57.3 m²·g^-1的介孔三氧化钨(DDA-WO₃),是未用DDA制备的非介孔WO₃(H₂WO₄-WO₃)的2.35倍。X射线衍射(XRD)结果表明,400 ℃下煅烧的DDA-WO₃是具有单斜晶型结晶孔壁的无序介孔结构。此外,400~550 ℃下煅烧的DDA-WO₃的结晶度均高于同条件的H₂WO₄-WO₃。400 ℃下的DDA-WO₃/FTO(掺氟氧化锡)在1.0 V的Ag/AgCl偏压作用下,可以产生0.18 mA·cm^-2的饱和光电流,是H₂WO₄-WO₃/FTO(0.06 mA·cm^-2)的3倍。增强的光电化学(PEC)活性主要因为DDA-WO₃/FTO的大表面积降低了低结晶度对PEC性能的不利影响,成为影响PEC活性的主要因素。500 ℃煅烧导致了DDA-WO₃/FTO介孔结构的坍塌,但高的结晶度仍然保持其优越的PEC催化活性。     

Effect of NH3 on the growth characterization of TiN films at low temperature

Titanium nitride (TiN) films were obtained by the atmospheric pressure chemical vapor deposition method of the TiCl₄–N₂–H₂ system with various flow rates of NH₃ at 600°C. The growth characteristics, morphology and microstructure of the TiN films deposited were analyzed by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Without NH₃ addition, no TiN was deposited at 600°C as shown in the X-ray diffraction curve. However, by adding NH₃ into the TiCl₄–N₂–H₂ system, the crystalline TiN was obtained. The growth rate of TiN films increased with the increase of the NH₃ flow rate. The lattice constant of TiN films decreased with the increase of the NH₃ flow rate. At a low NH₃ flow rate, the TiN (2 2 0) with the highest texture coefficient was found. At a high NH₃ flow rate, the texture coefficient of TiN (2 0 0) increased with the increase of the NH₃ flow rate. In morphology observation, thicker plate-like TiN was obtained when the NH₃ flow rate was increased. When the flow rate of NH₃ was 15 sccm, Moiré fringes were observed in the TiN film as determined by TEM analysis. The intrinsic strain was found in the TiN film as deposited with 60 sccm NH₃.     

共沉淀法合成ZnMoO4粉体及其抗菌性能

以Zn(NO₃)₂·6H₂O、(NH₄)₆Mo₇O₂₄·4H₂O为主要原料,采用共沉淀法合成ZnMoO₄粉体。利用XRD、SEM等测试方法对合成样品的物相组成、微观结构进行表征。以培养的大肠杆菌为消杀对象,研究了不同热处理温度下的样品对大肠杆菌的抗菌性能。结果表明,前驱体主要为非晶态,含少量ZnMoO₄、Zn₂Mo₃O₈、Zn(OH)₂和MoO₃;前驱体经400~600 ℃、保温30 min热处理,其产物转化为ZnMoO₄,且随着热处理温度的升高,合成的ZnMoO₄晶型逐渐完善,抗菌性能增加,当热处理温度为600 ℃时,可以获得结晶良好的ZnMoO₄,其晶粒呈颗粒状和片状,平均粒径约为1.5 μm。不同热处理温度合成的ZnMoO₄均具有一定的抗菌性能,其中经600 ℃热处理得到的ZnMoO₄具有最佳抗菌性能,经过24 h抗菌检测,其抗菌率达到99.2%,在商用涂料料浆中外加5%的ZnMoO₄粉体,所制备涂层对大肠杆菌的抗菌率达到95.7%,表明ZnMoO₄及其涂料具有良好的应用前景。     

Influence of the B and P content on the thermal stability and crystallization of cast iron based bulk amorphous alloys

The possibility of synthesizing bulk amorphous alloys with additions of B and P to commercial cast iron (Ci) of the chemical composition Fe_81.5Si_3.8C₁₄Tm_0.7 (at.%) was investigated. The effect of the B and P concentration on thermal stability, bulk glass forming ability (BGFA) and microstructure was studied by calorimetric (DSC and DTA) measurements as well as by X-ray diffraction. With the addition of 8.42 and 12.17 B to the commercial Ci bulk amorphous alloys with very wide supercooled liquid regions (77 and 81 K, respectively) could be produced. The partial replacement of Ci by B and P atoms increases the thermal stability and the BGFA. The kinetics of crystallization was investigated both by linear heating and by isothermal DSC measurements. The changes in the microstructure of the crystalline phases formed during linear heating were studied during further isothermal annealing at 833 K.     

基于抛光基材的热蒸镀铜箔生长高平整单层石墨烯薄膜

在石墨烯的化学气相沉积工艺中,铜箔是决定石墨烯薄膜质量的重要因素。传统铜箔由于制备工艺的限制,存在大量的缺陷,导致石墨烯薄膜的成核密度较高。本工作选用抛光铝板、抛光不锈钢板、微晶玻璃和SiO₂/Si作为基材,用热蒸镀法制备了不同粗糙度的铜箔,并详细讨论了以该系列铜箔生长高平整度石墨烯薄膜的条件及铜箔对石墨烯薄膜品质的影响。实验结果表明,铜箔以(111)取向为主,与基材分离后,表面具有纳米级平整度。在生长石墨烯后,从SiO₂/Si剥离的铜箔成核密度是4种基材中最小的。同时,从SiO₂/Si剥离的铜箔晶体结构变化最不明显,具有良好的结晶性,表面几乎不存在铜晶界缺陷。当压强为3 000 Pa,氢气和甲烷流速分别为300 mL/min和0.5 mL/min时,可以获得约1 mm横向尺寸的石墨烯单晶晶畴。     

Effect of silica on the crystallization of sodium perborate tetrahydrate

Effects of SiO₂ additive on sodium perborate tetrahydrate crystallization (via chemical reaction of NaBO₂ and H₂O₂) has been studied in a MSMPR-type reaction crystallizer. CSD and microscopic observations are used to evaluate the secondary nucleation behaviour. Secondary nucleation rate decreases in case of SiO₂ addition of up to 200 ppm. Higher SiO₂ content results in higher primary nucleation rates. Abrasion resistance increases with the amount of SiO₂ additive.     

Bi20TiO32 nanocones prepared from Bi–Ti–O mixture by metalorganic decomposition method

Bi₂₀TiO₃₂ in the form of nanocones are reported for the first time, which have been found during the formation of Bi₂Ti₂O₇ nanocrystals. Bi₂₀TiO₃₂ nanocones were prepared by metalorganic decomposition technique. From X-ray patterns, it was found that Bi₂₀TiO₃₂ is a metastable phase, and can transform gradually into Bi₂Ti₂O₇ phase with the annealing time increasing at a temperature of 550°C. The image of field emission scanning electron microscopy shows that the lengths of the nanocones are up to several micrometers and the diameters of cusps range from 20 to 200 nm. The studies of transmission electron microscopy show that the nanocones are crystalline Bi₂₀TiO₃₂. The growth mechanism of Bi₂₀TiO₃₂ nanocones has been proposed, which is similar to the vapor–liquid–solid growth mechanism.     

不同退火条件对PEALD制备的Ga2O3薄膜特性的影响

利用等离子增强原子层沉积技术(PEALD)在c面蓝宝石衬底上制备了氧化镓(Ga₂O₃)薄膜,研究了退火气氛(v(N₂)∶v(O₂)=1∶1(体积比)、空气和N₂)及退火时间对Ga₂O₃薄膜晶体结构、表面形貌和光学性质的影响。研究结果表明,退火前的氧化镓处于亚稳态,不同退火气氛下退火后晶体结构发生明显改变,而且退火气氛中N₂比例增加有利于Ga₂O₃重结晶。在N₂气氛下退火达到30 min,薄膜结构已由亚稳态转变成择优取向的β-Ga₂O₃。而且表面形貌分析表明,退火30 min后表面形貌开始趋于稳定,表面晶粒密度不再增加。另外实验样品在 400~800 nm的平均透射率几乎是100%,且光吸收边陡峭。采用N₂气氛退火,对于富氧环境下沉积的Ga₂O₃更利于薄膜表面原子迁移,以及择优取向Ga₂O₃重结晶。     

掺锗提高VO2薄膜的相变温度机理研究

二氧化钒(VO₂)作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(T_MIT)的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO₂薄膜T_MIT的影响,并尝试解释其内部作用机理。在约1 cm²大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO₂薄膜。研究发现锗离子作为掺杂离子确实有利于T_MIT的提高(本课题T_MIT最大可达84.7 ℃)。T_MIT提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。     

微波加热制备含稀土(La2O3)矿渣微晶玻璃研究

利用矿渣制备微晶玻璃是提高矿产资源利用率的主要形式之一。本文以白云鄂博尾矿为原料,采用微波一步法制备了CaO-MgO-Al₂O₃-SiO₂(CMAS)系辉石相矿渣微晶玻璃。选择835 ℃作为晶化温度,研究了微波加热对微晶玻璃析晶行为和微观组织的影响。以La₂O₃作为研究变量探讨了La₂O₃添加对矿渣微晶玻璃析晶行为的作用。与传统的热处理制度相比,微波加热可以在较短的时间内达到较高的析晶效果。同时La₂O₃的添加促进了晶粒细化。由拉曼光谱分析,La离子添加会导致玻璃网络中桥氧的增多,促进了辉石相析晶。在La的添加量为4%(质量分数)时硬度最高,达到了829.22 MPa。     

Nanocrystallization of fresnoite glass. I. Nucleation and growth kinetics

We determined the internal nucleation, crystal growth and overall crystallization kinetics of fresnoite crystal (2BaO · TiO₂ · 2SiO₂) in an almost stoichiometric fresnoite glass. Due to the extremely high nucleation rates (10¹⁷ m⁻³ s⁻¹) that limit the maximum crystal size to 700 nm the nucleation densities and crystal sizes were estimated by scanning electron microscopy (SEM). The volume fraction crystallized was measured by X-ray diffraction. The nucleation rates obtained directly from SEM measurements reasonably agree with those calculated from the combination of overall crystallization with crystal growth kinetics. The activation enthalpies for viscous flow, transport of structural units across the nucleus/melt interface (nucleation) and crystal growth: ΔH_η, ΔH_τ and ΔH_U respectively, follow a similar trend to that observed for other stoichiometric silicate glasses that nucleate internally: ΔH_η=294>ΔH_τ=87>ΔH_U=61 kJ/mol. Fresnoite glass displays the highest internal nucleation rates so far measured in inorganic glasses. These rates are comparable to some metallic glasses and can lead to nanostructured glass-ceramics.     

Solidification of superalloy in a SiO2–ZrO2–B2O3 coating mould

The preparation of glass-lined coating mould from gels in the ternary system of SiO₂–ZrO₂–B₂O₃ has been investigated. The crystallization characterization and high temperature structure stability of this coating mould are demonstrated. We can find that the crystallization of t-ZrO₂ as well as the tetragonal to monoclinic phase transformation are, respectively, retarded and impeded owing to the encasement of SiO₂ matrix. While the inhibitive effect of B₂O₃ on crystallization of the SiO₂–ZrO₂–B₂O₃ coating mould is explained. Finally, DD3 single crystal superalloy melt can realize highly undercooled rapid solidification by adopting this coating mould, which further evinces that SiO₂–ZrO₂–B₂O₃ coating mould has an ideal nucleation inhibition for superalloy.     

The effects of the homogeneity of non-crystalline Pb---Ti---O gels on the complex thermal processes leading to PbTiO3 formation

The effects of the homogeneity of precursor non-crystalline Pb---Ti---O gels on their transformation to crystalline PbTiO₃ were studied. Hydrous gels were prepared via two different routes, i.e., (i) mixing two unitary sols (MS), and (ii) co-precipitation (CP). Mechanical pretreatment was also carried out, primarily for the purpose of homogenization. The local homogeneity was evaluated by elementary microanalysis using a transmission electron microscope. The process of ball-milling the MS gel for 3 h improved its homogeneity only slightly. However, the homogeneity of the ball-milled MS gel suddenly increased to that of the CP gel on subsequent heating to a temperature as low as 483 K. This type of thermal homogenization was not observed for the unground MS gel. The evaporation of lead monoxide on further heating to 1023 K was also suppressed by preliminary ball-milling. All these results suggest that the ionic migration and the formation of Pb---O---Ti bonds in the gels take place during the mechanical activation with the aid of OH groups.     

雾化辅助化学气相沉积法氧化镓薄膜生长研究

采用自主设计搭建的雾化辅助化学气相沉积系统设备,开展了Ga₂O₃薄膜制备及其特性研究工作。通过X射线衍射研究了沉积温度、系统沉积压差对Ga₂O₃薄膜结晶质量的影响。结果表明,Ga₂O₃在425~650 ℃温度区间存在物相转换关系。随着沉积温度从425 ℃升高至650 ℃,薄膜结晶分别由非晶态、纯α-Ga₂O₃结晶状态向α-Ga₂O₃、β-Ga₂O₃两相混合结晶状态改变。通过原子力显微镜表征探究了生长温度对Ga₂O₃薄膜表面形貌的影响,从475 ℃升高至650 ℃时,薄膜表面粗糙度由26.8 nm下降至24.8 nm。同时,高分辨X射线衍射仪测试表明475 ℃、5 Pa压差条件下的α-Ga₂O₃薄膜样品半峰全宽仅为190.8″,为高度结晶态的单晶α-Ga₂O₃薄膜材料。     

基于磁光应用的TbO1.81和Tb2O3超细粉末的合成

以碳酸氢铵(AHC)为沉淀剂,采用液相沉淀法结合高温热分解获得了TbO_1.81和Tb₂O₃超细粉体。研究表明,沉淀前驱体呈现出一维纳米线形貌特征,纳米线的平均宽度随碳酸氢铵含量的增加而增长。前驱体在空气中直接加热煅烧经过脱水、脱碳和颗粒生长等过程得到了平均粒径约为140 nm的类球状TbO_1.81纳米粉体;而前驱体在流动氢气气氛下加热则获得了颗粒尺寸更小的Tb₂O₃粉体(平均粒度约为85 nm)。碳酸氢铵与Tb³⁺的摩尔比对氧化物粉体的分散有显著影响,最佳摩尔比为1∶1。TbO_1.81和Tb₂O₃的禁带宽度分别约为1.67 eV和5.20 eV。     

Hexagonal AlN films grown on nominal and off-axis Si(0 0 1) substrates

Nucleation and growth of wurtzite AlN layers on nominal and off-axis Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. For the films grown on the nominal Si(0 0 1) surface, cross-sectional transmission electron microscopy and X-ray diffraction investigations revealed a two-domain film structure (AlN¹ and AlN²) with an epitaxial orientation relationship of [0 0 0 1]_AlN || [0 0 1]_Si and AlN¹ || AlN² || [1 1 0]_Si. The epitaxial growth of single crystalline wurtzite AlN thin films has been achieved on off-axis Si(0 0 1) substrates with an epitaxial orientation relationship of [0 0 0 1]_AlN parallel to the surface normal and 0 1 1 0_AlN || [1 1 0]_Si.