Laser-assisted etching of diamonds in air and in liquid media

2 O, (CH₃)₂SO). Diamond samples are virtually transparent at this wavelength, and the coupling of laser radiation to diamond is via the formation of a thin graphitized layer at the diamond surface. The etching rate in liquid media is slightly higher than in air at otherwise equal conditions and is as high as 50 μm/s for etching with a scanning laser beam. Raman spectra measurements carried out on diamond samples etched in air show the presence of glassy carbon on the surface, whereas for samples etched in a liquid the diamond peak at 1332 cm^-1 dominates with significantly lower intensity of the glassy carbon peak. Electroless copper deposition on the laser-etched features is studied to compare the catalytic activity of the diamond surface etched in air with that etched in liquids. Possible mechanisms responsible for the observed difference both in the structure of the etched area and in the electroless Cu deposition onto the surface etched in various media (air or liquids) are discussed. Received: 2 August 1996/Accepted: 7 January 1997     

Synchrotron radiation photoelectron spectroscopy and near-edge X-ray absorption fine structure study on oxidative etching of diamond-like carbon films by hyperthermal atomic oxygen

Surface structural changes of a hydrogenated diamond-like carbon (DLC) film exposed to a hyperthermal atomic oxygen beam were investigated by Rutherford backscattering spectroscopy (RBS), synchrotron radiation photoelectron spectroscopy (SR-PES), and near-edge X-ray absorption fine structure (NEXAFS). It was confirmed that the DLC surface was oxidized and etched by high-energy collisions of atomic oxygen. RBS and real-time mass-loss data showed a linear relationship between etching and atomic oxygen fluence. SR-PES data suggested that the oxide layer was restricted to the topmost surface of the DLC film. NEXAFS data were interpreted to mean that the sp² structure at the DLC surface was selectively etched by collisions with hyperthermal atomic oxygen, and an sp³-rich region remained at the topmost DLC surface. The formation of an sp³-rich layer at the DLC surface led to surface roughening and a reduced erosion yield relative to the pristine DLC surface.     

U parameter of the mott-hubbard insulator 6H-SiC(0001)-(sqrt

The 6H-SiC(0001)-(sqrt[3]xsqrt[3])R30 degrees surface exhibits one half-filled localized dangling-bond orbital per surface unit cell. Its electronic structure can accurately be described as a Mott-Hubbard insulator. We investigate its spectrum by a spin-polarized ab initio quasiparticle calculation. The resulting band structure shows one occupied and one empty surface band, separated by a direct band gap of 1.95 eV. Since the band gap in the spectrum of the Hubbard model is directly given by the on-site Coulomb-interaction parameter U of the dangling-bond orbital, our results allow for a reliable determination of U = 1.95 eV.     

Calculation of angular photoelectric spectra

A method is presented for computing the angular dependence of photoemission from an arbitrarily oriented surface. The method is based on the three-step model and it makes direct use of the band structure taking into account all the emission cones. Explicit formulas are derived that allow to locate k-points which contribute 8-peaks to the spectrum at fixed angles of observation.     

X射线光电子能谱法研究硅纳米线的能带结构

制备了氧辅助热分解法,以一氧化硅为原料,以氩气为载气,维持管内压强为1000Pa,在高温炉中于1250℃下反应5 h后得到硅纳米线。硅纳米线经5%氢氟酸水溶液处理5 min后,与1×10-3 mol·L-1的氯化金溶液中反应5 min,在硅纳米线的表面上修饰了金纳米粒子,用X射线粉末衍射表征了产物的结构,同时观察到单质硅和金的XRD图谱;用电子扫描和透射显微镜观察了产物的形貌,表明氧辅助方法可制得大量均匀的硅纳米线,修饰在硅纳米线上的金纳米点形状整齐,尺寸均匀,平均直径约8 nm;并用X射线光电子能谱分析了修饰过程中能带结构的变化。结果表明,金纳米粒子表面带负电,它在施主能级和受主能级上都有电子存在;由于氧杂质的存在,硅纳米线的费米能级移向价带顶。     

THz频段单面左手材料的设计及仿真研究

本文运用等效参数提取方法验证了双线螺旋结构在不同频率处不仅能够实现负的磁导率, 而且可以实现负的介电常数. 在电磁波平行和垂直入射到双线螺旋结构表面两种情况下, 发现其负介电常数的形成机理相同. 以往的单面左手材料的研究仅仅局限于微波波段, 通过改进双线螺旋结构, 在THz频段设计出一种新型单面左手材料, 同时利用LC等效电路解释了其设计原理. 一般的左手材料是由刻蚀在基板两侧的电谐振器和磁谐振器组合而成的复合结构, 与这些复合结构相比, 这种新型单面左手材料具有低损耗, 结构简单, 易于加工等优点.     

Photoluminescent properties of silicon carbide and porous silicon carbide after annealing

Photoluminescent (PL) p-type 6H porous silicon carbides (PSCs), which showed a strong blue-green photoluminescence band centered at approximately 490 nm, were annealed in Ar and vacuum conditions. The morphological, optical, and chemical states after annealing are reported on electrochemically etched SiC semiconductors.The thermal treatments in the Ar and vacuum environments showed different trends in the PL spectra of the PSC. In particular, in the case of annealing in a vacuum, the PL spectra showed both a weak red PL peak near 630 nm and a relatively intense PL peak at around 430 nm in the violet region. SEM images showed that the etched surface had spherical nanostructures, mesostructures, and islands. With increasing annealing temperature it changes all spherical nanostructures. The average pore size observed at the surface of the PSC before annealing was of the order of approximately 10 nm.In order to investigate the surface of a series of samples in detail, both the detection of a particular chemical species and the electronic environments at the surface are examined using X-ray photoelectron spectroscopy (XPS). The chemical states from each XPS spectrum depend differently before and after annealing the surface at various temperatures. From these results, the PL spectra could be attributed not only to the quantum size effects but also to the oxide state.     

An optical topographic technique to study the dissolution kinetics at dislocation sites in sodium chloride crystals

A technique has been developed to study the dissolution kinetics at dislocation sites in sodium chloride single crystals. A parallel beam of light is allowed to fall upon the silvered etched surface of the crystals and the reflected beam is received back on a photographic film. The pattern thus obtained on the photographic film gives information about (i) the structure of the etched surface (ii) the nature of the surface forming the pit and (iii) the slope of the pit at the source of dissolution.     

基于电磁带隙结构的新型高温超导低通滤波器

提出了一种基于电磁带隙结构的低通滤波器实现形式,这种新型低通滤波器采用电容周期性加载共面(Coplanar Waveguide)传输线结构的形式.为了减小通带内波纹、显著提高阻带信号抑制,电容单周期性加载结构被调整为电容双周期性加载结构,同时在共面传输线的接地面上引入了双周期性的长方形缺陷地结构.基于上述方案设计制作了一个高温超导低通滤波器,仿真及测试结果表明:低通滤波器的带外抑制平均增加了约20 dB,带内传输损耗波纹显著变小.     

Pt interactions with annealed and chemically-etched Nb-doped SrTiO3(0 0 1) surfaces: Metal/oxide surface chemical effects on band bending behavior

XPS and LEED have been used to characterize the interaction of sputter-deposited Pt (maximum coverage <5 ML) with Nb-doped SrTiO₃(0 0 1) surfaces prepared either by annealing in O₂ and then UHV, or by chemical-etching in aqua regia. The annealed surface exhibits an ordered (1 × 1) LEED pattern, with additional diffraction spots and streaks indicating the presence of oxygen vacancies. Increasing Pt coverage results in the decrease of the observed Pt(4f_7/2) binding energy and the uniform shift of the Sr(3d), Ti(2p) and O(1s) levels to smaller binding energies, as expected for Pt cluster growth and surface-to-Pt charge donation on an n-type semiconductor. The etched surface is disordered, and exhibits a hydroxylated surface with a contaminant C film of ∼23 ? average thickness. Pt deposition on the etched surface results in an immediate decrease in the intensity of the OH feature in the O(1s) spectrum, and a uniform shift of the Sr(3d), Ti(2p) and O(1s) levels to larger binding energies with increasing Pt coverage. The observed Pt(4f_7/2) binding energy on the etched surface (∼72 eV) is independent of Pt coverage, and indicates substantial electronic charge donation from the Pt to surface hydroxyl species. The observation of band bending towards higher binding energies upon Pt deposition (behavior normally associated with p-type semiconductors) demonstrates that sub-monolayer quantities of adsorbates can alter metal/oxide interfacial charge transfer and reverse the direction of band bending, with important consequences for Schottky barrier heights and device applications.     

Fabrication of nanopatterned germanium surface by laser-induced etching: AFM, Raman and PL studies

Fabrication of the nanopatterned germanium (Ge) surface is done by laser-induced etching. Atomic force microscopy is utilized here to study the surface and sizes of Ge nanoparticles. Raman and photoluminescence (PL) spectroscopy have been used to characterize their vibrational and light emission properties. Wavelength-dependent Raman investigations of these nanopatterned Ge surface reveal spatial distribution of sizes of nanoparticles. Nanopatterned Ge structures (etched for 60 min) emit a broad PL band having two maxima at 2.1 and 2.35 eV.     

Spectroscopic analysis of CIGS2/CdS thin film solar cell heterojunctions on stainless steel foil

This paper presents a spectroscopic analysis of the interface between a CuIn_1−xGa_xS₂ (CIGS2) absorber and a CdS buffer layer on stainless steel foil by Auger electron spectroscopy (AES), inverse photoemission spectroscopy (IPES) and photoelectron spectroscopy (PES) such as X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). By combining these spectroscopic techniques, detailed information about the electronic and chemical properties of the CIGS2 surface and the CdS/CIGS2 interface can be obtained. The gallium concentration in CIGS2 films was found to increase continuously towards the Mo back contact. XPS analysis showed the presence of KCO₃ on the surface of CdS, deposited on etched and un-oxidized samples indicating diffusion of potassium. No potassium was observed on oxidized as well as samples having thicker CdS (50 nm) indicating the effectiveness of oxidation and chemical bath deposition (CBD) process in cleaning the sample surface effectively. In addition, investigation of the electronic level alignment at the interface has been carried out by combining PES and IPES. Conduction band offset of −0.45 (±0.15) eV and a valence band offset of −1.06 (±0.15) eV were measured. These unfavorable conditions limit efficiency of CIGS2 thin film solar cells.     

Surface characterisation of indium phosphide

LEED, characteristic loss spectroscopy, Auger electron spectroscopy, photoemission and light modulated contact potential methods have been employed to study indium phosphide surfaces. Cleaved (110) faces have a surface unit mesh identical to that of the bulk and surface states lead to band bending in the surface region. Reaction with oxygen leads to loss of phosphorus and the formation of an oxide layer near the surface. Features in the characteristic loss spectrum are discussed in terms of interband transitions and plasmon losses and the Auger spectra of oxidized surfaces are thought to contain components due to cross transitions. The surface composition, band bending and photothresholds of etched (100) surfaces of epitaxial InP layers have been established. Surfaces cannot be cleaned by heat treatment alone since decomposition occurs at elevated temperature. The influence of evaporated silver on the sign of the surface photovoltage has also been investigated.     

Surface morphology and electronic structure of halogen etched InAs (1 1 1)

The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H₂O, Br–methanol and I–ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {1 1 1} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.     

化学刻蚀过程中熔石英表面沉积物的形成及其对激光损伤的影响

化学刻蚀是提升熔石英光学元件抗激光损伤性能的重要后处理技术之一,但刻蚀后熔石英表面附着的沉积物对其表面质量、透射性能和抗激光损伤性能有很大影响。使用光学显微镜和原子力显微镜表征了化学刻蚀后附着于熔石英表面的沉积物的微观形貌,并分析了其形成机理;X射线能谱分析表明化学刻蚀后熔石英表面沉积物主要由Fe,Ni,Al等元素的金属盐组成。损伤阈值测试结果表明熔石英表面高密度沉积物区域的损伤阈值明显低于非沉积物区域,沉积物对熔石英光学元件的抗激光损伤性能产生严重影响,它们是诱导熔石英激光损伤的前驱体。     

Electronic structure of SiO2(111) thin film

The electronic structure of (111) surface of β-crystobalite is investigat ed using the empirical tight binding method. Our calculations identify surface states in the conduction band, band gap and valence band. The surface state formed from silicon-s and p_z orbitals, which is believed to account for the structure in the O K excitation spectra, lies in the band gap. It is seen that oxygen adsorption on the surface removes surface states and gives rise to a sharp peak at about — 3.8 eV below the valence band edge.     

氧在GaP(111)上的初级吸附阶段

采用多种表面分析手段,系统地研究了氧在GaP(111)上的吸附,发现氧的初级吸附在1×10⁴L时就已饱和,获得了有关这一阶段表面电子结构的变化、表面能带弯曲、化学吸附反应等方面的信息,发现这一吸附阶段与表面缺陷有关,适当地加热处理则可能将缺陷和氧一同去除,因此这有可能成为一种有效的、去除缺陷的表面工程手段。 关键词：     

周期调制结构平面薄膜电爆炸实验研究

在金属层表面引入微结构以实现对Z箍缩等离子体形成和发展过程中不稳定性的调控具有重要研究价值.在“强光一号”装置上(峰值电流~1.4 MA,上升时间~100 ns),开展了针对具有一维周期性凹槽调制结构的金属薄膜的电爆炸实验研究.实验负载采用外推型平面结构,基底为30μm厚铝膜,刻蚀周期为2 mm,刻蚀深度约为10μm.通过激光阴影成像、激光干涉成像和可见光自辐射成像等系统进行联合诊断.实验结果表明刻蚀结构对等离子体发展过程的不稳定性特征产生了明显调制作用,原本征波长也受到抑制,微结构周期对不稳定结构波长产生趋同效应;未刻蚀一侧边界层同样受刻蚀层结构的影响,在不稳定结构上表现出相似形貌,且内外侧不稳定性特征的耦合关联性增强;刻蚀凹槽处在爆炸过程中膨胀更为迅速,形成的表面等离子体结构与初始结构反相;在刻蚀结构的几何突变处会形成细长的等离子体喷流,在二分之一刻蚀波长处出现波谱特征峰.理论分析表明电流密度调制造成电热不稳定性分布改变是调控作用产生的重要原因.     

基于Bragg反射面结构的衍射光栅设计与研究

基于Bragg反射光栅是一维光子晶体的一种特例结构,本文提出利用一维光子晶体带隙理论进行Bragg反射光栅设计.通过光学仿真软件OptiFDTD对Bragg反射光栅的宽度及倾斜角度误差的仿真分析,发现Bragg光栅齿刻槽宽度变化在10%范围、倾斜角度10°以内不会引起Bragg光栅衍射效率的明显变化,说明Bragg反射光栅具有较高的工艺误差容限;根据一维光子晶体带隙理论,设计了一种罗兰圆结构的Bragg衍射双光栅结构模型,实现了两个频段之间的衍射分光,优化分析结果表明:当第一套光栅中Bragg周期层数为6、第二套光栅Bragg周期层数为10时,两频段波长的衍射效率均可以达到70%左右,明显高于传统深刻蚀的衍射光栅.基于本设计的波分复用器是一种尺寸小、衍射效率高的新型EDG波分复用器,为未来高效密集型EDG波分复用器发展提供了一种新的设计思路.     

一类菁染料的SERS光谱研究

本文报导了一类菁染料在银溶胶中和吸附在硝酸刻蚀的银和铜箔上的SERS 光谱以及两种方式的比较。对硝酸刻蚀粗化银和铜箔表面的最佳条件进行了讨论,区别于银溶胶,用粗化银和铜箔测得了共振 SERS 光谱。提出了菁染料分子在铜、银表面吸附的可能方式。