Grain Size Effects in Sensor Response of Nanostructured SnO2- and In2O3-Based Conductometric Thin Film Gas Sensor

Based on the experimental results, obtained by studying both structural and gas-sensing properties of the SnO₂ and In₂O₃ films deposited by the spray pyrolysis method, we analyzed the influence of crystallite size on the parameters of the SnO₂- and In₂O₃-based thin film solid-state gas sensors. For comparison, the behavior of ceramic-type gas sensors was considered as well. In particular, we examined the correlation between the grain size and parameters of conductometric-type gas sensors such as the magnitude of sensor signal, the rate of sensor response, thermal stability, and the sensitivity of sensor signal to air humidity. Findings confirmed that that grain size is one of the most important parameters of metal oxides, controlling almost all operating characteristics of the solid state gas sensors fabricated using both the ceramic and thin film technologies. However, it was shown that there is no single universal requirement for the grain size, because changes in grain size could either improve, or worsen of operating characteristics of gas sensors. Therefore, the choice of optimal grain size should be based on the detailed consideration of all possible consequences of their influence on the parameters of sensors designed.     

Structural, electrical and gas-sensing properties of In2O3 : Ag composite nanoparticle layers

The central objective of this study is to investigate (i) size-dependent properties of In₂O₃ nanoparticles and (ii) the role of metal additives in enhancing the gas sensing response. For this purpose, In₂O₃ : Ag composite nanoparticle layers having welldefined individual nanoparticle size and composition have been grown by a two step synthesis method. Thermogravimetric analysis, X-ray diffraction and transmission electron microscopy have been used to study the effect of post-synthesis heat treatment on the size and structure of the nanoparticles. A first-time unambiguous observation of sizedependent lowering of transformation temperature has been explained in terms of lower cohesive energy of surface atoms and increase in surface-to-volume ratio with decrease in nanoparticle size. The gas sensing studies of In₂O₃ as well as the In₂O₃ : Ag composite nanoparticle layers have been studied as a function of size and composition. In₂O₃: Ag composite nanoparticle layers with 15% silver show a sensitivity of 436 and response time of 6 s for 1000 ppm of ethanol in air. Ag additives form a p-type Ag₂O, which interact with n-type In₂O₃ to produce an electron-deficient space-charge layer. In the presence of ethanol, interfacial Ag₂O reduces to Ag, creating an accumulation layer in In₂O₃ resulting in increased sensitivity     

Study of electrical conductivity changes and phase transitions in Co3O4 doped ZrO2

The electrical conductivity of ZrO₂ doped with Co₃O₄ has been measured at various temperatures for different molar ratios. The conductivity increases due to the migration of vacancies created by doping. The conductivity is also found to increase with rise in temperature up to 120°C, and after attaining a maximum the conductivity decreases due to a collapse of the lattice framework. A second rise in conductivity around 460°C in all the compositions confirms the phase transition in ZrO₂ from monoclinic to tetragonal symmetry. X-ray powder diffraction and DTA studies were carried out for confirming the doping effects and the transition in ZrO₂.     

Effects of strontium on the characteristics of Pb(Zr1/2Ti1/2)O3--Pb(Zn1/3Nb2/3)O3 ceramics

The dielectric and piezoelectric properties of pyrochlore-free lead zirconate titanate-lead zinc niobate ceramics were investigated systematically as a function of Sr doping. The powders of Pb_{(1? x )}Sr _x [0.7(Zr_{1 / 2}Ti_{1 / 2})–0.3(Zn_{1 / 3}Nb_{2 / 3})]O₃, where x?=?0–0.06 were prepared using the columbite-(wolframite) precursor method. The ceramic materials were characterized using X-ray diffraction, dielectric spectra, hysteresis and electromechanical measurements. The phase-pure perovskite phase of Sr-doped PZN--PZT ceramics was obtained over a wide compositional range. The results showed that the optimized electrical properties were also achieved at composition x?=?0.0, which were K _P?=?0.69, d ₃₃?=?670?pC?N^?1, P _r?=?31.9?µC?cm^?2 and ε_rmax?=?18600. Maximum dielectric constant values of the systems decreased rapidly with increasing Sr concentration. Moreover, with increasing Sr concentration dielectric constant versus temperature curves become gradually broader. The diffuseness parameter increased significantly with Sr doping. Furthermore, Sr doping has been shown to produce a linear reduction in the transition temperature (T _m)?=?294.1–12.7x°C with concentration (x). Sr shifts the transition temperature of this system at a rate of 12.7°C?mol^?1%.     

Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

Epitaxial In₂O₃ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 °C). The film deposited at 650 °C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In₂O₃(1 0 0)||YSZ(1 0 0) with In₂O₃[0 0 1]||YSZ[0 0 1]. The Hall mobility of the single-crystalline In₂O₃ film deposited at 650 °C is as high as 66.5 cm² V⁻¹ s⁻¹ with carrier concentration of 1.5 × 10¹⁹ cm⁻³ and resistivity of 6.3 × 10⁻³ Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.     

FT-IR Study of the Adsorption of Propane and Propene on V2O5/γ-Al2O3 Catalyst

It has been observed on the oxidized V₂ O₅/γ-Al₂ O₃ that C₃H₆ form alkoxides which were converted to acetone during the desorption of adsorbate phase at 373 K. C₃ H₈ may form π-complexes on the reduced form of the same catalyst. However, the intensities of the bands in the adadsorption of C₃ H₈ were very weak as compared with the case of C₃ H₆ adsorption. Therefore, it was not reasonable to assign these bands clearly as any of the surface type species.     

Creation of nanoparticles and luminescence in Al2O3 crystal by Zn ion implantation

Single crystal α-Al₂O₃ wafers were implanted with 45 keV Zn ions up to a fluence of 1×10¹⁷ ions/cm², and were then subjected to furnace annealing in oxygen atmosphere at different temperatures. Various techniques have been applied to study the creation of nanoparticles (NPs), defects and their thermal evolutions, as well as their effects on optical properties of Al₂O₃. Our results clearly show that Zn NPs have been synthesized in the as-implanted sample and they begin to be oxidized at 500 °C. Two broad photoluminescence bands appear in the Zn ion-implanted samples and their intensities depend on the annealing temperatures. The results have been interpreted in view of creation of the defects and NPs, Zn atoms diffusion as well as their thermal evolution during annealing.     

Spectroscopy and Structure of Eu-Doped Nanostructured Lu2O3

Decay kinetics and X-ray diffraction patterns of Lu₂O₃:Eu with concentration of the dopant spanning 0–20% were measured for two series of materials with crystallites sized of 13 nm and 35 nm. For the series of smaller crystallites a very significant concentration quenching was observed, while for the larger crystallites the effect was minor only. Detailed structural analysis made it possible to postulate that this effect is related to an inhomogeneous distribution of Eu^3? ions within the smaller crystallites.     

A new high-pressure polymorph of Ti2O3: implication for high-pressure phase transition in sesquioxides

The post-corundum phase transition has been investigated in Ti₂O₃ on the basis of synchrotron X-ray diffraction in a diamond anvil cell and transmission electron microscopy. The new polymorph of Ti₂O₃ was found at about 19 GPa and 1850 K, and this phase was stable even at about 40 GPa. A new polymorph of Ti₂O₃ can be indexed on a Pnma orthorhombic cell, and the unit-cell parameters are a=7.6965 (19) Å, b=2.8009 (9) Å, c=7.9300 (23) Å, V=170.95 (15) Å³ at 19 GPa, and a=7.8240 (2) Å, b=2.8502 (1) Å, c=8.1209 (3) Å, V=181.10 (1) Å³ at ambient conditions. The Birch–Murnaghan equation of state yields K ₀=206 (3) GPa and K′₀=4 (fixed) for corundum phase, and K ₀=296 (4) GPa and K′₀=4 (fixed) for the post-corundum phase. The molar volume decreases by 12% across the phase transition at around 20 GPa. The structural identification was carried out on a recovered sample by the Rietveld method, and a new polymorph of Ti₂O₃ can be identified as Th₂S₃-type rather than U₂S₃-type structure. The transition from corundum-type to Th₂S₃-type structure accompanies the drastic change of the form of polyhedron: from TiO₆ octahedron in the corundum-type to TiO₇ polyhedron in the Th₂S₃-type structures.     

Lithium in In2S3

The electrochemical insertion of lithium into β-In₂S₃ at different concentrations has been investigated by means of γγ-Perturbed Angular Correlations measurements using implanted radioactive ¹¹¹In nuclei. The study of the hyperfine interactions of the ¹¹¹Cd nuclei during the decay ¹¹¹In(EC)¹¹¹Cd allowed to determine the evolution of the three observed electric field gradients at different temperatures and lithium contents. This study reveals a great difference of behavior between the three indium sites of the structure, and shows the mobility of indium ions and their partial reduction after lithium insertion. In₂S₃ is good model material to study the properties of more complex materials based on this structure, which may be used as electrodes for lithium-ion batteries. This revised version was published online in September 2006 with corrections to the Cover Date.     

Method for fitting crystal field parameters and the energy level fitting for Yb3+ in crystal Sc2O3

<正>A method to compute the numerical derivative of eigenvalues of parameterized crystal field Hamiltonian matrix is given,based on the numerical derivatives the general iteration methods such as Levenberg-Marquardt,Newton method, and so on,can be used to solve crystal field parameters by fitting to experimental energy levels.With the numerical eigenvalue derivative,a detailed iteration algorithm to compute crystal field parameters by fitting experimental energy levels has also been described.This method is used to compute the crystal parameters of Yb~(3+) in Sc_2O_3 crystal, which is prepared by a co-precipitation method and whose structure was refined by Rietveld method.By fitting on the parameters of a simple overlap model of crystal field,the results show that the new method can fit the crystal field energy splitting with fast convergence and good stability.     

The effect of annealing on the room temperature ferromagnetism in co-sputtered In2O3: C thin films

In this paper, we report investigation of room temperature (RT) ferromagnetism in In₂O₃ (InO) thin films doped with carbon prepared by the co-sputtering method. InO thin films both undoped and C doped with varied thicknesses in the range of 45 to 80 nm were synthesized on Si substrates with varied C concentrations. The carbon concentration was varied from 1.6 to 9.3 at%. The undoped InO films showed no trace of ferromagnetism. Carbon doped films (InO:C) exhibited ferromagnetism at RT, which was of the orders of 10⁻⁵ emu and varied strongly with C concentrations. It is observed that the magnetization reached a maximum value of 5.7 emu/cm³ at 4 at% C. Annealing of the InO:C films in an oxygen environment resulted in a decrease in the magnetization, indicating the crucial role of oxygen vacancies in the films. It is concluded that the oxygen vacancies were important and compete with C substitution for the RT ferromagnetism.     

Fabrication and evolution of Cu nanoparticles in Al2O3 crystal by ion implantation and annealing at different atmospheres

Single crystal Al₂O₃ samples were implanted with 45 keV Cu ion implantation at a dose of 1 × 10¹⁷ ions/cm², and then subjected to furnace annealing in vacuum or with a flow of oxygen gas. Various techniques, such as ultraviolet-visible spectroscopy, X-ray diffraction spectroscopy and atomic force microscopy, have been used to investigate formation of Cu NPs and their evolution. Our results clearly show that the evolution of Cu NPs depends strongly on annealing atmosphere in the temperature range up to 600 °C. Annealing in vacuum only gives rise to a slight change in the size of Cu NPs. No evidence for oxidization of Cu NPs has been revealed. Remarkable modifications in Cu NPs, including the size increase and the effective transformation into CuO NPs, have been observed for the samples annealed at oxygen atmosphere. The results have been tentatively discussed in combination with the role of oxygen from atmosphere in diffusion of Cu atoms towards the surface and its interactions with Cu NPs during annealing.     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.     

SrAl_2B_2O_7:Dy~(3+)材料的制备及其发光性能

采用高温固相法制备了SrAl2B2O7:Dy3+发光材料.在350nm紫外光激发下,测得SrAl2B2O7:Dy3+材料的发射光谱为一个多峰宽谱,主峰分别为480,573和678nm;分别和Dy3+的4F9/2→6H15/2,4F9/2→6H13/2,4F9/2→6H11/2的跃迁发射相对应;监测573nm的发射峰,得到材料的激发光谱为一个多峰宽谱,主峰分别为295,325,350,365,400nm.研究了Dy3+掺杂浓度对SrAl2B2O7:Dy3+材料发射光谱的影响,随着Dy3+掺杂浓度的增大,SrAl2B2O7:Dy3+材料的Iy/Ib逐渐增大,根据Judd-Ofelt理论解释了其原因.随着Dy3+掺杂浓度的增大,Dy3+的4F9/2→6H13/2跃迁产生的573nm发射峰强度先增大,在4%时达到最大值,之后减小,其自身的浓度猝灭机理为电偶极-电偶极相互作用.不同的电荷补偿剂Li+,Na+,K+的引入均使发光强度得到提高,尤其以Li+最佳,发光强度提高了大约33%.     

Effects of indium doping on the superconducting properties of YBa2Cu3Oy sintered compounds and thin films

We investigated the effects of indium doping on the superconducting properties of YBCO sintered samples and thin films. In₂O₃-doped YBCO and YBa₂Cu_3−xIn_xO_y sintered samples showed a gradual decrease in the critical temperature (T_c) with increasing indium content; however, a T_c value above 80 K was maintained even up to 30 vol.% addition and x = 0.4, respectively. Ba₃Cu₃In₄O₁₂ was detected by X-ray diffractometry and energy-dispersive X-ray spectroscopy as a reaction product for both sintered samples. The normalized J_c under a magnetic field of 0.1 T showed a maximum at x = 0.3. Indium-doped YBCO films prepared by pulsed laser deposition showed a similar dependence of T_c on indium content as the sintered samples.     

Effects of RE2O3 (RE = Tm, Sc, Yb) addition on the superconducting properties of ErBa2Cu3Oy

We investigated the effects of added Tm₂O₃, Sc₂O₃, and Yb₂O₃ on the superconducting properties of sintered Er123 samples. Tm₂O₃ addition caused the least T_c degradation, exhibiting a T_c above 90 K even for 17 vol% addition. Samples with added Sc₂O₃ maintained a T_c at above 90 K up to an addition of 7.2 vol%, while Yb₂O₃-containing samples showed a monotonic decrease in T_c with increased vol% of added Yb₂O₃. Tm₂O₃-containing samples exhibited a slight increase in J_c(0.1 T)/J_c(0) and had constant J_c values even for 17 vol% addition. XRD and SEM results indicate that the Tm₂O₃ is very stable in the superconducting matrix.     

Rotational dependences of line half-widths for CO and CO2 confined in SiO2/Al2O3 xerogel

The absorption spectra of CO and CO₂ confined in nanopores of SiO₂/Al₂O₃ xerogel have been measured using a Bruker IFS-125 HR Fourier spectrometer. Dependences of the half-width values on rotational quantum numbers and the line shift mean values are studied and compared with the data available in literature. Possible causes which can affect the rotational dependences are discussed.     

Low-temperature phase transition in Ba2TiGe2O8

Previous work on Ba₂TiGe₂O₈ crystals has shown an unusual low-temperature (～ 223 K on cooling, ～ 273 K on heating) phase transition. Precession x-ray photographs on Ba₂TiGe₂O₈ single crystals show an incommensurate modulation along b*, and, for the first time, also along a*. Single crystal intensity data confirm the average structure in space group Cmm2. There is positional disorder in the pyrogermanate groups, and this is the probable cause for the modulated structure. The low-temperature phase transition is proposed to be a lock-in transition, with the modulation along a* locking in at a value of 1/3. Several properties, as well as other unusual features of the low-temperature phase transition, are discussed in light of the proposed lock-in transition. Domain studies show that the ferroelastic domains are unstable in the low-temperature phase.