MBE growth and magnetotransport studies of ferromagnetic Ga1−xMnxSb semiconductor layers on hybrid ZnTe/GaAs substrates

Narrow-gap Ga_1−xMn_xSb layers grown on hybrid ZnTe/GaAs substrates are observed to be ferromagnetic by SQUID magnetization and anomalous Hall effect measurements. The layers display an easy axis of magnetization perpendicular to the layer plane, in contrast to in-plane easy axis orientation observed in Ga_1−xMn_xSb grown on GaSb substrates. Resistivity measured in the Ga_1−xMn_xSb/ZnTe/GaAs system shows a well-defined maximum at temperatures close to the ferromagnetic/paramagnetic transition. We determined the spontaneous resistivity anisotropy in Ga_0.98Mn_0.02Sb grown on hybrid ZnTe/GaAs substrates and compared it to that observed on Ga_0.98Mn_0.02Sb grown on a GaSb buffer. These results should provide a valuable test for future theories of transport in ferromagnetic semiconductors.     

Magnetic and electric properties of layered perovskites Nd2−2xSr1+2xMn2O7 (x=0.3–0.5)

Magnetic and electric properties of layered perovskites Nd_2−2xSr_1+2xMn₂O₇ (x=0.3, 0.4 and 0.5) are sensitive to the doping content x. The sample with x=0.5 is antiferromagnetic (AFM) and insulating. On decreasing x, the AFM ordering is suppressed and a canted AFM or weak ferromagnetic (FM) ordering appears, and the resistivity decreases. The sample with x=0.4 still shows insulating behavior, but a metal–insulator transition is observed for x=0.3. By suggesting the presence of a competition between AFM super-exchange interaction and FM double-exchange interaction, the doping dependence of magnetic and electric properties can be understood.     

Electrical properties of perovskite-type La(Cr1−xMnx)O3+δ

Perovskite-type La(Cr_1−xMn_x)O_3+δ (0.0x1.0) was synthesized using a sol–gel process. The crystal structure of La(Cr_1−xMn_x)O_3+δ changes from orthorhombic to rhombohedral at x=0.6. The Mn⁴⁺ ion content increases monotonically in the range 0.2x1.0. The magnetic measurement of La(Cr_1−xMn_x)O_3+δ indicates that a Mn³⁺ ion is a high-spin state with (d)³(dγ)¹. The variation of the average (Cr, Mn)-O distance is explained by ionic radii of the Cr³⁺, the Mn³⁺, the Mn⁴⁺ ions. Since the log σT–1/T curve is linear and the Seebeck coefficient (α) is independent of temperature, it is considered that La(Cr_1−xMn_x)O_3+δ is a p-type semiconductor and exhibits the hopping conductivity.     

Effect of structural defects on InSb/AlxIn1−x Sb quantum wells grown on GaAs (0 0 1) substrates

We investigate oriented abrupt steps (OASs), a type of surface defect in InSb/Al_xIn_1−xSb quantum-well (QW) samples grown on GaAs (0 0 1) substrates. Previous atomic force microscopy studies have reported that the OASs are oriented along the [1 1 0] and directions and have an inclination angle of 5°–15° with respect to the sample surface. Our plan-view and cross-sectional transmission electron microscopy analyses reveal that the OASs are the terminal edges of threading micro-twins at the sample surface. Hall effect measurements indicate that the density of OASs correlates with the electron mobility in the InSb QWs.     

Energy band gaps for the GaxIn1−xAsyP1−y alloys lattice matched to different substrates

A pseudopotential formalism within the virtual crystal approximation in which the effects of composition disorder are involved is applied to the Ga_xIn_1−xAs_yP_1−y quaternary alloys in conditions of lattice matching to GaAs, InP and ZnSe substrates so as to predict their energy band gaps. Very good agreement is obtained between the calculated values and the available experimental data for the alloy lattice matched to InP and GaAs. The alloy is found to be a direct-gap semiconductor for all y compositions whatever the lattice matching to the substrates of interest. The (Γ→Γ) band-gap ranges and the ionicity character are found to depend considerably on the particular lattice-matched substrates suggesting therefore that, for an appropriate choice of y and the substrate, Ga_xIn_1−xAs_yP_1−y could provide more diverse opportunities to obtain desired band gaps, which opens up the possibility of discovering new electronic devices with special features and properties.     

Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN

Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted Al_xGa_1−xN with different AlN contents (in the range 0≤x≤0.2) and from implanted In_xAl_1−xN with different InN contents (x=0.13 and 0.19) close to the lattice match with GaN. The Tm³⁺ emission spectrum depends critically on the host material. The blue emission from Al_xGa_1−xN:Tm peaks in intensity for an AlN content of x0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 C. The blue emission from In_0.13Al_0.87N:Tm, annealed at 1200 C, is more than ten times stronger than that from Al_xGa_1−xN:Tm, x≤0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.     

Spin-polarized first-principles study of ferromagnetism in zinc-blende In<Subscript>1−x</Subscript>Mn<Subscript>x</Subscript>Sb

First-principles calculations based on the density functional theory are performed to study the structural properties, spin-polarized electronic band structures, density of states and magnetic properties of the zinc blende In_{1− x} Mn _x Sb (x = 0.125, 0.25, 0.50, 0.75, 1.0). The calculated lattice constants of In_{1− x} Mn _x Sb obey the Vegard’s law with a marginal upward bowing. With the increase of Mn concentration in In_{1− x} Mn _x Sb, a transition from the semi-metallic to the half-metallic behavior happens such that the majority-spin valence states crosses the Fermi level and the minority-spin states have a gap at the Fermi level. A large exchange splitting (∼ 4 eV) is observed between Mn 3d states of the majority-spins and the minority-spins. The total magnetic moment of In_{1− x} Mn _x Sb half-metallic ferromagnets per Mn atom basis is 4μ _B. The total magnetic moment per Mn atom indicate that Mn atoms act as acceptors in InSb and contribute to holes in the lattice of InSb. Due to p-d hybridization, the free space charge of Mn reduces that results a loss in its magnetic moment. The loss in the magnetic moment of the Mn atoms is converted into a small local magnetic moments on the In and Sb sites.     

Optical-field profiles in InxGa1−xN -MQW laser structures

In this paper, we calculated the optical fields for In_xGa_1−xN-multiquantum well (MQW) laser structures. Two different optical cavities are compared, the conventional step separate confinement heterostructure (Step) and a graded-index (GRIN) structure with a parabolic variation of the Al content in the Al_xGa_1−xN guide layers. A comparison is made regarding the confinement factor, near- and far-field patterns. An anomalous behavior for the confinement factor is observed in the structure, and it can be eliminated by choosing an appropriated combination of the layer’s thicknesses forming the waveguide. For Al_xGa_1−xN, an improved expression for the refractive index is presented, which shows better agreement with experimental data than previously reported expressions.     

Unconventional magnetic and transport properties in Gd1−xLaxMn2Ge2 with two-dimensional arrangement of Mn atoms

In this paper, we present our recent experimental results of magnetic and transport properties of Gd_1−xLa_xMn₂Ge₂ intermetallic compounds with the ThCr₂Si₂-type layered structure. The results obtained indicate that, in GdMn₂Ge₂, a first-order transition from a collinear antiferromagnetic to a collinear ferrimagnetic state appears with decreasing temperature at T_t3, below the Néel temperature T_N. In Gd_1−xLa_xMn₂Ge₂ compounds with x=0.05 and 0.075, after ordering ferrimagnetically at T_t1, two kinds of first-order transitions from a canted ferrimagnetic to a non-collinear antiferromagnetic state and from a non-collinear antiferromagnetic to a reentrant canted ferrimagnetic state occur at T_t2 and T_t3. In Gd_0.925La_0.075Mn₂Ge₂, a field-induced metamagnetic transition from non-collinear antiferromagnetism to canted ferrimagnetism occurs at relatively low fields, accompanied by fractal like multi-step transitions, the so called “devil's stair-case”. Furthermore, a negative giant magnetoresistance (GMR) effect (Δρ/ρ15%) was observed at the field-induced metamagnetic transition. The mechanism of this negative GMR was clarified by comprehensive measurements of the resistivity on single crystals Gd_0.925La_0.075Mn₂Ge₂ and TbMn₂Ge₂. With further increasing x, only canted ferrimagnetism appears with a compensation temperature for 0.10<x<0.40, whereas no compensation behavior appears for x>0.50. The phase diagram obtained indicates that the overall magnetism is controlled by the Mn–Mn intralayer distance in the tetragonal c-plane, reflecting the two-dimensional arrangement of Mn atoms.     

Magnetische untersuchungen an mischkristallen der quasibinären legierungssysteme (Cd Te)1-x (Mn Te)x und (Sn Te)1-x (Mn Te)x

The magnetic susceptibility and magnetization are presented for polycrystalline samples of the alloy systems Cd_1-xMn_xTe 0 < x 0.1 and Sn_1-xMn_xTe 0 < 4 0.4. The magnetic measurements were performed between 2.3 K and 300 K in external magnetic fields up to 11 kOe. At sufficiently high temperatures the susceptibility can be described by a Curie-Weiss law. In the system Sn_1-xMn_xTe θ_p is positive. A linear dependence θ_p ∞ x was found with θ_p(0.4) = 49 K. In the series Cd_1-xMn_xTe θ_p changes sign. For θ < x < 0.04 θ_p is positive with a maximum θ_p ≈ 10 K at x = 0.02. In the region x #62; 0.04 θ_p becomes negative with θ_p = -35 K at x = 0.1. The effective spin value of manganese is S_eff #62; 5/2 for all the samples. The investigation was done to check the assumption that ferromagnetic coupling may exist in tellurides of manganese if the shortest distance d_MnMn is greater than 3.4 Å. This hypothesis has been stated. In the case θ_p #62; 0 the results are partly explained by the RKKY exchange coupling.     

Growth and studies of Hg1−xCdxTe based low dimensional structures

The band structure of HgTe quantum wells (QWs) has been determined from absorption experiments on superlattices in conjunction with calculations based on an 8×8 k·p model. The band structure combined with self-consistent Hartree calculations has enabled transport results to be quantitatively explained.Rashba spin–orbit, (SO) splitting has been investigated in n-type modulation doped HgTe QWs by means of Shubnikov–de Haas oscillations (SdH) in gated Hall bars. The heavy hole nature of the H1 conduction subband in QWs with an inverted band structure greatly enhances the Rashba SO splitting, with values up to 17 meV.By analyzing the SdH oscillations of a magnetic two-dimensional electron gas (2DEG) in modulation-doped n-type Hg_1−xMn_xTe QWs, we have been able to separate the gate voltage-dependent Rashba SO splitting from the temperature-dependent giant Zeeman splitting, which are of comparable magnitudes. In addition, hot electrons and Mn ions in a magnetic 2DEG have been investigated as a function of current.Nano-scale structures of lower dimensions are planned and experiments on sub-micrometer magneto-transport structures have resulted in the first evidence for ballistic transport in quasi-1D HgTe QW structures.     

Far-infrared spectra of Pb1−xMnxTe alloys

Far-infrared reflectivity spectra of Pb_1−xMn_xTe (0.0001x0.1) single crystals were measured in the 10–250 cm⁻¹ range at room temperature. The analysis of the far-infrared spectra was made by a fitting procedure based on the model of coupled oscillators. In spite of the strong plasmon–LO phonon interaction, we found that the long wavelength optical phonon modes of these mixed crystals showed an intermediate one–two mode behavior.     

Magnetocaloric effects in Mn1.35Fe0.65P1-xSix compounds

The structural and magnetocaloric properties of Mn_1.35Fe_0.65P_1-xSi_x compounds are investigated. The Si-substituted compounds, Mn_1.35Fe_0.65P_1-xSi_x with x = 0.52, 0.54, 0.55, 0.56, and 0.57, are prepared by high-energy ball milling and the solid-state reaction. The X-ray diffraction shows that the compounds crystallize into the Fe₂P-type hexagonal structure with space group P62m. The magnetic measurements show that the Curie temperature of the compound increases from 253 K for x = 0.52 to 296 K for x = 0.56. The isothermal magnetic-entropy change of the Mn_1.35Fe_0.65P_1-xSi_x compound decreases with the Si content increasing. The maximal value of the magnetic-entropy change is about 7.0 J/kg稫 in the Mn_1.35Fe_0.65P_0.48Si_0.52 compound with a field change of 1.5 T. The compound quenched in water possesses a larger magnetic entropy change and a smaller thermal hysteresis than the non-quenched samples. The thermal hysteresis of the compound is less than 3.5 K. The maximum adiabatic temperature change is about 1.4 K in the Mn_1.35Fe_0.65P_0.45Si_0.55 compound with a field change of 1.48 T.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Separated AlxIn1−xN quantum dots grown by plasma-reactive co-sputtering

Separated Al_xIn_1−xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of Al_xIn_1−xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the Al_xIn_1−xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.     

Influence of the martensitic structure transformation in LaAgxIn1?x on the magnetic properties of substituted Ce

The martensitic phase transformation has no observable effect on the magnetic susceptibility of Ce in LaAg _x In_1–x which agrees with the assumption of a crystal field splitting by 300 K of the² F _5/2 ground state of Ce³⁺ ions. The magnetic ordering temperature and the Kondo minimum move to higher temperatures together with the martensitic phase transformation when the Ag concentration is reduced. This behavior can be related qualitatively to the lowering of the 5d – e _g levels in the center of the Brillouin-zone with increasing In content.     

Lattice, magnetic and transport properties in antiperovskite compounds

The temperature-dependent magnetization, lattice, and transport properties of Mn₃Sn_1−xGe_xC (0≤x≤0.5) compounds are systematically investigated. The Mn–Mn atomic distance decreases as Ge content is increased, and the transition temperature from ferromagnetic (or ferrimagnetic) to paramagnetic state decreases too. Mn₃SnC has a large magnetovolume effect (MVE). However, Ge-doping in Mn₃SnC gradually reduces the MVE, till the MVE disappears. Whether there is an abnormal lattice change or not, there always exists an anomalous increase in resistivity near the magnetic phase transition point with decreasing temperature.     

Magnetic cluster developement in In1−x Mn x Sb semiconductor alloys

X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Transmission Electron Microscopy (TEM) and magnetic measurements as a function of applied magnetic field and temperature for In_1?x Mn _x Sb (0.05≤x≤0.2) system are reported. Magnetic measurements performed at high and small magnetic field in ZFC and FC indicate the coexistence of ferromagnetic In_1?x Mn _x Sb solid solution and two types of magnetic cluster: ferromagnetic MnSb and ferrimagnetic Mn₂Sb. XPS valence band and Mn 2p core level spectra have confirmed the presence of MnSb and Mn₂Sb phases. TEM images show some manganese antimonide phase microinclusions with dimension between (30–40) nm.     

Structure and superconducting properties of Bi2Ba2−xMxCuO6+δ

The effect of oxygen nonstoichiometry and barium cation substitution on the structure and superconducting properties of Bi₂Ba_2−xM_xCuO_{6 +δ}(M = Sr, Ru, Rh, Pd, In, Sb or Pb;xchanged from 0 to 0.2) were studied. The cation-substituted samples annealed in oxygen flow contain a superconducting phase withT_c^initnear 95 K.     

Magnetooptical studies of Cd1−xMnxTe quantum wells with parabolic confining potential

We report on magnetooptical studies of II–VI semiconductor quantum wells with a parabolic shape of the potential grown on the basis of Cd_1−xMn_xTe. Photoluminescence excitation measurements revealed a series of peaks equidistant in energy associated with interband optical transitions between “harmonic oscillator states”. We observed the Zeeman splitting for heavy-hole excitons up to the subband index n=5. From the comparison of the experimental data with numerical calculations for the Zeeman splitting it was possible to determine the correct shape of the potential.