水溶性ZnO/氨丙基-硅氧烷量子点的合成与荧光特性

利用溶胶-凝胶法在非水体系中合成出ZnO量子点,并用3-氨丙基三乙氧基硅烷(APTES)对其进行包覆,制得水溶性ZnO/氨丙基-硅氧烷量子点(ZnO-ASQDs)。通过实验确定最佳包覆条件:t=60℃,T=30min,nSi:nZn=1:1,VPEG/Vtotal=1/9。合成的ZnO量子点分别在348与512nm处有2个荧光发射峰,且激发区域较宽(220~360nm)。经过APTES包覆,ZnO量子点荧光发射强度明显增强,同时具有良好的水溶性与荧光稳定性,稳定时间可达60d之久。由Brus公式计算表明,包覆层对ZnO量子点不但改性还起到保护作用,抑制其团聚。经XRD与TEM证实,ZnO-ASQDs具有核壳结构,ZnO核平均粒径为6nm,整体粒径约为20nm。此外,通过调整ZnO核的粒径可制备出不同荧光颜色的ZnO-ASQDs。     

基于电沉积技术制备ZnS量子点/海藻酸盐复合膜及其检测应用

基于电沉积技术发展了一种原位制备ZnS量子点及其海藻酸盐复合膜的方法,此方法具备可控性好、步骤简单、条件温和、绿色环保等优点.实验结果表明,电沉积后可以在电极上形成ZnS量子点/海藻酸锌复合膜,该复合膜表面光滑无气泡,在302 nm紫外光下呈现清晰的蓝色荧光.透射电镜测试和光谱分析结果表明复合膜中存在ZnS量子点,其平均粒径为3.0 nm.利用电沉积技术的可控性和空间选择性以及ZnS量子点的荧光性能,可以制备出具备不同形状和荧光图案的复合膜.此外,利用电沉积技术制备的ZnS量子点/海藻酸锌复合膜同时具备荧光检测和电化学检测的能力,在双模式检测以及构建双模式检测器方面具备应用前景.     

MAA修饰ZnO量子点及其发光特性

以ZnAc2·2H2O为原料,在乙醇中通过70℃回流4h,得到ZnO前驱物,与LiOH·H2O反应,制备出ZnO.采用巯基乙酸(mercaptoacetic acid,MAA)对所合成的ZnO进行表面修饰,修饰后的产物经SEM和XRD表征,证明获得了物相单一、近似球状、粒径为4.6nm的ZnO量子点.借助紫外-可见和荧光分析,研究了MAA对该量子点的修饰效果,探讨了设置条件下ZnO的发光机理和性质.发现该实验体系之所以产生荧光表面缺陷发射峰消失和激子发射峰明显增加的光学现象,是因为MAA有效地覆盖了ZnO的表面缺陷,并稳定包裹住ZnO粒子.同时还研究了MAA加量、温度、电解质对修饰产物发光性能的影响,发现经MAA修饰后的ZnO量子点具有较强的荧光发光性能、良好的长期陈放稳定性,以及一定的抗电解质影响能力.研究结果对ZnO量子点应用于生物分析具有重要参考价值.     

硫脲修饰Cd掺杂ZnO水溶性量子点的制备及表征

在非水稀溶液中以聚乙烯吡咯烷酮K-30为稳定剂,硫脲为表面修饰剂,制备Cd掺杂ZnO水溶性量子点荧光体;同时研究了基质的优化及硫脲含量对ZnO量子点发光性能的影响,Eu和Li的共掺杂对ZnO:Cd量子点发光性能的影响.采用紫外光谱、荧光发射光谱、红外光谱和透射电镜、XRD对样品进行表征.结果表明:经Cd优化基质后、Eu和Li的共掺杂使量子点荧光强度明显增强;硫脲修饰后纳米颗粒分布更加均匀、晶粒更小、荧光光谱蓝移、量子点产率增加;该样品XRD衍射峰是馒头峰.属于无定形态;红外光谱图中因硫脲引起的NH2和C-NH2伸缩振动吸收峰分别为3189.0,1088.2 cm-1,硫脲修饰的最佳浓度大约为32 mg/mL.该量子点制备方法简单易行,具有较好的稳定性及高荧光量子效率,为进一步应用于生物标记奠定基础.     

非水稀溶液中SiO2包覆ZnO量子点的制备及其发光特性研究

本文利用溶胶-凝胶法在非水稀溶液中制备出SiO₂包覆的ZnO量子点。通过紫外-可见吸收光谱(UV-Vis)和荧光光谱对合成量子点的发光特性进行了研究。结果表明，在n_SiO2:n_ZnO=1∶4的条件下，ZnO量子点的发光性能最佳。经过Brus公式计算，该量子点的平均半径在2.8 nm左右，稳定性显著提高。其荧光光谱在363 nm处有一强而窄的激子发射峰，在519 nm处有一个宽而弱的绿色发射峰。说明SiO₂对ZnO形成了有效包覆，明显减少了ZnO的表面缺陷。     

硫脲修饰法制备高发光性能CdTe量子点

通过巯基水解制备了具有优异荧光特性的碲化镉量子点. 详细研究前驱体镉离子与巯基丙酸(MPA)摩尔比、镉离子浓度等制备条件对大尺寸、高量子产率的亲水性碲化镉量子点光学性能的影响. 在不同的水热生长时间下, 可制备出荧光发射峰位于485-660 nm范围内的不同尺寸的碲化镉水溶性量子点, 荧光发射峰半高宽控制在40-75 nm之间, 量子点的最高量子产率(QY)达到了45%. 并利用硫脲缓慢水解和光解释放自由硫离子, 修饰碲化镉表面, 检测修饰后的量子点在12天内光学性能的变化情况. 通过考察硫脲用量对量子点修饰效果, 发现当n(CdTe)/n(thiourea)=1:4(量子点浓度以镉离子浓度计)时, 硫脲对发射峰为505 nm的碲化镉量子点修饰效果最为理想, 量子点荧光强度加强了5倍, 量子产率达到68.3%.     

氨基化单分散量子点/二氧化硅核壳纳米粒子的制备及其细胞标记

通过反向微乳液法, 在油溶性量子点表面包裹二氧化硅外壳, 使油溶性量子点水溶性化, 再利用3-氨丙基三乙氧基硅烷(APTES)在已形成的二氧化硅纳米颗粒表面进行氨基化改性, 制备富含氨基的二氧化硅包裹的量子点荧光纳米球. 通过透射电子显微镜(TEM)、粒径分析、zeta电位检测、紫外-可见分光光度、荧光分光光度和红外光谱等手段对产品进行了表征. 结果表明, 所制备的二氧化硅量子点纳米球(45 nm)具有单分散性、水溶性好及光化学稳定性强等优点. 通过静电作用, 所制备的单分散氨基化二氧化硅量子点对肿瘤细胞表面膜电荷进行了初步标记显像.     

CdS量子点敏化ZnO纳米棒阵列电极的制备和光电化学性能

采用连续式离子层吸附与反应法制备了CdS量子点敏化的ZnO纳米棒电极.应用扫描电子显微镜(SEM)、X射线衍射(XRD)和透射电子显微镜(TEM)对CdS量子点/ZnO纳米棒电极的形貌、晶型和颗粒尺寸进行了分析和表征;采用光电流-电位曲线和光电流谱研究了不同CdS循环沉积次数及不同沉积浓度对复合电极的光电性能影响.结果表明,前驱体浓度都为0.1mol·L-1且沉积15次敏化后的ZnO纳米棒阵列电极光电性能最好.与单纯的ZnO纳米棒阵列电极和单纯的CdS量子点电极相比,其光电转换效率显著提高,单色光光子-电流转换效率(IPCE)在380nm处达到76%.这是因为CdS量子点可以拓宽光的吸收到可见光区,并且在所形成的界面上光生载流子更容易分离.荧光光谱实验进一步说明了光电增强的原因是,两者间形成的界面中表面态大大减少,有利于减少光生电子和空穴的复合.     

ZnO量子点的制备及其与吖啶橙相互作用的研究

采用均匀沉淀法,以无水氯化锌为原料,以氢氧化钠为沉淀剂,在室温条件下搅拌24h,制备了ZnO量子点,并用荧光光谱法和UV-Vis吸收光谱法研究了该量子点与吖啶橙的相互作用。结果表明:①ZnO量子点和吖啶橙主要以范德华作用力和氢键作用力相互结合,且其结合常数较大,两者间有较强的结合力;②吖啶橙与ZnO量子点之间形成了复合物导致ZnO量子点在349nm处的荧光发生静态猝灭;③根据Forster荧光共振能量转移原理计算得ZnO量子点与吖啶橙分子间距离(r)为1.98nm(小于7nm),判断其分子内发生非辐射能量转移。     

葡萄糖酸碳量子点的合成及其光学性能的研究

以葡萄糖酸为碳源,采用微波法、热解法和水热溶液法合成了水溶性较好的蓝色荧光碳量子点。用透射电镜(TEM)观察其形貌,荧光光谱(FL)和紫外可见光谱(UV)探究其激发和发射光谱,用时间分辨光谱(TRF)测其荧光寿命值。微波和热解法制备的碳量子点粒径在2.5~7.5 nm之间,激发波长为360 nm,发射波长为450 nm,荧光发射依赖激发波长,有三个荧光寿命,表面状态不均一。水热法制备的碳量子点,粒径在3.0~8.5 nm之间,激发波长为350 nm,发射波长为430 nm,荧光发射不依赖激发波长,只有一个荧光寿命值,表面状态均一。水热法合成的碳量子点荧光量子产率高为6.01%,为进一步研究葡萄糖酸制备碳量子点提供参考。     

Microstructure-controlled aerosol-gel synthesis of ZnO quantum dots dispersed in SiO2 nanospheres

ZnO quantum dots dispersed in a silica matrix were synthesized from a TEOS:Zn(NO(3))(2) solution by a one-step aerosol-gel method. It was demonstrated that the molar concentration ratio of Zn to Si (Zn/Si) in the aqueous solution was an efficient parameter with which to control the size, the degree of agglomeration, and the microstructure of ZnO quantum dots (QDs) in the SiO(2) matrix. When Zn/Si ≤ 0.5, unaggregated quantum dots as small as 2 nm were distributed preferentially inside SiO(2) spheres. When Zn/Si ≥ 1.0, however, ZnO QDs of ～7 nm were agglomerated and reached the SiO(2) surface. When decreasing the ratio of the Zn/Si, a blue shift in the band gap of ZnO was observed from the UV/Visible absorption spectra, representing the quantum size effect. The photoluminescence emission spectra at room temperature denoted two wide peaks of deep-level defect-related emissions at 2.2-2.8 eV. When decreasing Zn/Si, the first peak at ～2.3 eV was blue-shifted in keeping with the decrease in the size of the QDs. Interestingly, the second visible peak at 2.8 eV disappeared in the surface-exposed ZnO QDs when Zn/Si ≥ 1.0.     

Stable aqueous dispersion of ZnO quantum dots with strong blue emission via simple solution route

The aqueous dispersion of ZnO quantum dots (QDs) with strong blue emission (quantum yield of 76%) was synthesized through a simple solution route. The water stability of such QDs is provided by the hydroxyl groups on their surface, and the strong blue emission is suggested to arise from the formation of surface ZnO/oleic acid complexes. Under irradiation, these complexes are thought to absorb the excitation light with 3.54 eV and then generate the blue emission with 2.82 eV.     

Synthesis of colloidal SnSe quantum dots by electron beam irradiation

Water-soluble orthorhombic colloidal SnSe quantum dots with an average diameter of 4 nm were successfully prepared by a novel irradiation route using an electronic accelerator as a radiation source and hexadecyl trimethyl ammonium bromide (CTAB) as a surfactant. The quantum dots exhibit a large direct bandgap of 3.89 eV, greatly blue shifted compared with that of bulk SnSe (1.0 eV) due to the quantum confinement effect. The quantum dots show blue photoluminescence at ∼420 nm. The influence of CTAB on the growth of the quantum dots was investigated and a possible reaction/growth mechanism was proposed.     

Dendronized Cellulose Nanocrystals as Templates for Preparation of ZnS and CdS Quantum Dots

Cellulose nanocrystals (CNC) isolated from bleached bagasse pulp were modified with a second-generation isocyanate dendron (G2-dendron) to prepare dendronized cellulose nanocrystals (DCN). Transmission electron microscopy (TEM), elemental analysis for nitrogen, Fourier transform infrared (FTIR) and ¹³C magic angle spinning nuclear magnetic resonance (¹³C MAS NMR) proved occurrence of the modification of cellulose nanocrystals surfaces. The dendronized cellulose nanocrystals were used as templates for formation of ZnS and CdS quantum dots with uniform diameter at low temperature in water. The prepared DCN/QDs were highly soluble in water. TEM images showed that the size of the prepared quantum dots was about 5 nm in diameter. UV-Visible and fluorescence spectroscopy showed absorption and emission at wavelength values lower than that reported for bulk ZnS and CdS.     

Synthesis of ZnO nanorods and their application in quantum dot sensitized solar cells

ZnO nanorod thin films of different thicknesses and CdS quantum dots have been prepared by chemical method. X-ray diffraction pattern reveals that the CdS quantum dot and ZnO nanorods are of hexagonal structure. Field emission scanning electron microscope images show that the diameter of hexagonal shaped ZnO nanorods ranges from 110 to 200 nm and the length of the nanorod vary from 1.3 to 4.7 μm. CdS quantum dots with average size of 4 nm have been deposited onto ZnO nanorod surface using successive ionic layer adsorption and reaction method and the assembly of CdS quantum dot with ZnO nanorod has been used as photo-electrode in quantum dot sensitized solar cells. The efficiency of the fabricated CdS quantum dot-sensitized ZnO nanorod-based solar cell is 1.10 % and is the best efficiency reported so far for this type of solar cells.     

Highly luminescent CdSe/Cd(x)Zn(1-x)S quantum dots coated with thickness-controlled SiO2 shell through silanization

A silanization technique of hydrophobic quantum dots (QDs) was applied to SiO(2)-coated CdSe/Cd(x)Zn(1-x)S QDs to precisely control the SiO(2) shell thickness and retain the original high photoluminescence (PL) properties of the QDs. Hydrophobic CdSe/Cd(x)Zn(1-x)S core-shell QDs with PL peak wavelengths of 600 and 652 nm were prepared by a facile organic route by using oleic acid (OA) as a capping agent. The QDs were silanized by using partially hydrolyzed tetraethyl orthosilicate by replacing surface OA. These silanized QDs were subsequently encapsulated in a SiO(2) shell by a reverse micelles synthesis. The silanization plays an important role for the QDs to be coated with a homogeneous SiO(2) shell and retain a high PL efficiency in water. Transmission electron microscopy observation shows that the shells are 1-9 nm with final particle sizes of 10-25 nm, depending on the initial QD size. In the case of short reaction time (6 h), the QDs were coated with a very thin SiO(2) layer because no visible SiO(2) shell was observed but transferred into the water phase. The silica coating does not change the PL peak wavelength of the QDs. The full width at half-maximum of PL was decreased 4 nm after coating for QDs emitting at both 600 and 652 nm. The PL efficiency of the SiO(2)-coated is up to 40%, mainly determined by the initial PL efficiency of the underlying CdSe/Cd(x)Zn(1-x)S QDs.     

UV luminescent organic-capped ZnO quantum dots synthesized by alkoxide hydrolysis with dilute water

A novel synthesis route to organic-capped and colloidal ZnO quantum dots (QDs) has been developed. Specifically, zinc-di-t-butoxide and zinc-di-n-butoxide are hydrolyzed by very dilute water (400-600 mass ppm) in hydrophilic benzylamine and polymerized to ZnO by dehydration and/or a butanol elimination reaction. Growth of the ZnO QDs and exchange of the surface capping ligand from the hydroxyl groups and/or benzylamine to the oleylamine occur by heating the colloidal solution after addition of the oleylamine at 100-180°C. The final ZnO QDs with diameters in the range of 3-7 nm are highly dispersible in various organic solvents. The ZnO QDs exhibit the quantum size effect upon UV emission; it was controlled between 3.39 and 3.54 eV in the present study. The defect-related Vis emission decreased and the UV emission becomes dominant when zinc-di-n-butoxide with a 99.99% zinc purity is used as the starting material. The intensity of the photoluminescence UV emission is 1.5 times higher than that of the Vis emission.     

Highly luminescent SiO(2) beads with multiple QDs: Preparation conditions and size distributions

Multiple CdTe quantum dots (QDs) were incorporated in SiO(2) beads using a reverse micelle route (i.e., a water-in-oil emulsion) and a precursor solution of SiO(2)-coated CdTe QDs as the water phase. The QDs in the beads retained their initial photoluminescence efficiency (56%) because they had a thin SiO(2) shell that prevented removal of the ligands from their surface during incorporation. Because of the SiO(2) sol in the precursor solution, the size of the water pools in water-in-oil emulsion increased to 700±320nm compared to 25±5nm when an aqueous CdTe QD solution was used. The size of the beads prepared in the water pools depended strongly on the preparation parameters (water phase injection speed, tetraethyl orthosilicate concentration, reaction time). The beads were easily separated into three size ranges (60±23, 160±40, and 650±200nm) by filtering for further application.     

An effective oxidation route to blue emission CdSe quantum dots

Nearly monodisperse CdSe quantum dots with blue emission are obtained through an oxidation approach, in which CdSe particles can be etched into smaller ones. During the oxidation process, CdSe with yellow emission (546 nm) can be rapidly oxidized to blue emission (466 nm) due to its incompletely crystallized structure. Further oxidation results in the slow blue-shift of the photoluminescence peak to 433nm. The quantum fluorescence efficiency of CdSe with blue emission is about 10%, and surface-trap emission becomes evident when the PL peak of CdSe reaches the blue-violet region, since the surface atom ratio increases. This oxidation route offers a simple and mild way to get extremely small CdSe quantum dots.     

CdSe/CdS/SiO2复合纳米球的制备及发光性能

采用两相法合成了CdSe/CdS核-壳结构的量子点, 用氨水催化水解正硅酸乙酯制得复合结构的CdSe/CdS/SiO₂发光纳米球. 通过对量子点用量、氨水用量、反应时间及溶剂比例等实验条件的调节, 得到了单分散性较好, 尺寸在23~145 nm的复合发光纳米球. 利用紫外-可见吸收光谱和荧光发射光谱对其发光性能进行了研究, 同时利用透射电镜(TEM)观察复合纳米球的形貌. 结果表明, 复合发光纳米球样品的最高荧光量子产率可达8%.