Structure and Optical Properties of 0.1BiFeO3-0.9SrBi2Nb2O9 Thin Films Using a Modified Sol-Gel Technique

Fe-doped SrBi₂Nb₂O₉ precursor solution was synthesized using bismuth nitrate Bi(NO₃)₃·5H₂O, strontium nitrate Sr(NO₃)₂, iron nitrate Fe(NO₃)₃·9H₂O, and niobium ethoxide Nb(OC₂H₅)₅ as starting materials, ethylene glycol monomethyl ether (C₃H₈O₂) as the solvent. 0.1BiFeO₃-0.9SrBi₂Nb₂O₉ thin films were prepared on fused quartz substrates using sol-gel processing. The surface morphology and crystal structure and optical properties of the thin films were investigated. The thin film annealing at 400°C were found to be amorphous, and the thin films crystallize to a perovskite structure after a post-deposition annealing at 600°C for 1 h in air. The grain of thin film was evenly distributed. The thin films exhibit the designed optical transmission, while the optical transition is indirect in nature. Their optical band gap is about 2.5 eV.     

The influence of film thickness and process temperature on <Emphasis Type="Italic">c</Emphasis>-axis orientation of Bi<Subscript>3</Subscript>TiTaO<Subscript>9</Subscript> thin films

Bi-layered ferroelectric Bi₃TiTaO₉ (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO₂/SiO₂/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization (P _r ) than that of films annealed at 650 and 750°C. The P _r and coercive field (E _c ) values were measured to be 2 μC/cm² and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.     

Formation of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–TiO<Subscript>2</Subscript> bilayer using atomic layer deposition and its application to dynamic random access memory

To enhance film conformality together with electrical property suitable for dynamic random access memory (DRAM) capacitor dielectric, the effects of oxidant and post heat treatment were investigated on aluminum and titanium oxide (Al₂O₃–TiO₂) bilayer (ATO) thin film formed by atomic layer deposition method. For the conformal deposition of Al₂O₃ thin film, the O₃ oxidant required a higher deposition temperature, more than 450 °C, while H₂O or combined oxygen sources (H₂O+O₃) needed a wide range of deposition temperatures ranging from 250 to 450 °C. Conformal deposition of the TiO₂ thin film was achieved at around 325 °C regardless of the oxidants. The charge storage capacitance, measured from the ATO bilayer (4 nm Al₂O₃ and 2 nm TiO₂) deposited at 450 °C for Al₂O₃ and 325 °C for TiO₂ with O₃ oxidant on the phosphine-doped poly silicon trench, showed about 15% higher value than that of 5 nm Al₂O₃ single layer thin film without any increase of leakage current. To maintain the improved electrical property of the ATO bilayer for DRAM application, such as enhanced charge capacitance without increase of leakage current, upper electrode materials and post heat treatments after electrode formation must be selected carefully. Dedicated to Professor Su-Il Pyun on the occasion of his 65th birthday.     

Low-temperature processing of sol-gel derived Pb(Zr,Ti)O<Subscript>3</Subscript> thick films using CO<Subscript>2</Subscript> laser annealing

Fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thick films on a Pt/Ti/SiO₂/Si substrate using powder-mixing sol-gel spin coating and continuous wave CO₂ laser annealing technique to treat the specimens with at a relatively low temperature was investigated in the present work. PZT fine powders were prepared by drying and pyrolysis of sol-gel solutions and calcined at temperatures from 400 to 750°C. After fine powder-containing sol-gel solutions were spin-coated on a substrate and pyrolyzed, CO₂ laser annealing was carried out to heat treat the specimens. The results show that laser annealing provides an extremely efficient way to crystallize the materials, but an amorphous phase may also form in the case of overheating. Thicker films absorb laser energy more effectively and therefore melt at shorter periods, implying a significant volume effect. A film with thickness of 1 μm shows cracks and rough surface morphology and it was difficult to obtain acceptable electrical properties, indicating importance of controlling interfacial stress and choosing appropriate size of the mixing powders. On the other hand, a thick film of 5 μm annealed at 100 W/cm² for 15 s exhibits excellent properties (P _r = 36.1 μC/cm², E _c = 19.66 kV/cm). Films of 10 μm form a melting zone at the surface and a non-crystallized bottom layer easily at an energy density of 100 W/cm², showing poor electrical properties. Besides, porosity and electrical properties of thick films can be controlled using appropriate processing parameters, suggesting that CO₂ laser annealing of modified sol-gel films is suitable for fabricating films of low dielectric constants and high crystallinity.     

Microstructure and properties of sol-gel derived Pb(Zr<Subscript>0.3</Subscript>Ti<Subscript>0.7</Subscript>)O<Subscript>3</Subscript> thin films on GaN/sapphire for nanoelectromechanical systems

Highly (111) oriented, phase-pure perovskite Pb(Zr_0.3Ti_0.7)O₃ (or PZT 30/70) thin films were deposited on single-crystal, (0001) wurtzite GaN/sapphire substrates using the sol-gel process and rapid thermal annealing. The phase, crystallinity, and stoichiometry of annealed PZT films were evaluated by X-ray diffraction and Rutherford backscattering spectroscopy. The atomic force microscopy revealed a smooth PZT surface (rms roughness ∼1.5 nm) with striations and undulations possibly influenced by the nature of the underlying GaN surface. The cross-sectional field-emission scanning electron microscopic images indicated a sharper PZT/GaN interface compared to that of sol-gel derived PZT on (111) Pt/TiO₂/SiO₂/(100) Si substrates. The capacitance-voltage (C-V) characteristics for PZT in the Pt/PZT/GaN (metal-ferroelectric-semiconductor or MFS) configuration were evaluated as a function of annealing temperature and applied voltage. The observed C-V hysteresis stemmed from trapped charge at defect sites within PZT. Also, the lower capacitance density (C/A = 0.35 μF/cm², where A is the area of an electrode) and remnant polarization (P _r ∼ 4 μC/cm²) for PZT in the MFS configuration, compared to the values for PZT in the MFM configuration (Pt/PZT/Pt), were attributed to the high depolarization field within PZT.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Dry Potassium-Based Sorbents for CO<Subscript>2</Subscript> Capture

Dry potassium-based sorbents were prepared by impregnation with potassium carbonate on supports such as activated carbon (AC), TiO₂, Al₂O₃, MgO, CaO, SiO₂ and various zeolites. The CO₂ capture capacity and regeneration property of various sorbents were measured in the presence of H₂O in a fixed bed reactor, during multiple cycles at various temperature conditions (CO₂ absorption at 50–100 °C and regeneration at 130–400 °C). The KAlI30, KCaI30, and KMgI30 sorbents formed new structures such as KAl(CO₃)₂(OH)₂, K₂Ca(CO₃)₂, K₂Mg(CO₃)₂, and K₂Mg(CO₃)₂·4(H₂O), which did not completely convert to the original K₂CO₃ phase at temperatures below 200 °C, during the CO₂ absorption process in the presence of 9 vol.% H₂O. In the case of KACI30, KTiI30, and KZrI30, only a KHCO₃ crystal structure was formed during CO₂ absorption. The formation of active species, K₂CO₃·1.5H₂O, by the pretreatment with water vapor and the formation of the KHCO₃ crystal structure after CO₂ absorption are important factors for absorption and regeneration, respectively, even at low temperatures (130–150 °C). In particular, the KTiI30 sorbent showed excellent characteristics with respect to CO₂ absorption and regeneration in that it satisfies the requirements of a large amount of CO₂ absorption (87 mg CO₂/g sorbent) without the pretreatment with water vapor, unlike KACI30, and a fast and complete regeneration at a low temperature condition (1 atm, 150 °C). In addition, the higher total CO₂ capture capacity of KMgI30 (178.6 mg CO₂/g sorbent) than that of the theoretical value (95 mg CO₂/g sorbent) was explained through the contribution of the absorption ability of MgO support. In this review, we introduce the CO₂ capture capacities and regeneration properties of several potassium-based sorbents, the changes in the physical properties of the sorbents before/after CO₂ absorption, and the role of water vapor and its effects on CO₂ absorption.     

FTIR-ATR <Emphasis Type="Italic">in situ</Emphasis> observation on the efflorescence and deliquescence processes of Mg(NO<Subscript>3</Subscript>)<Subscript>2</Subscript> aerosols

The efflorescence and deliquescence processes of Mg(NO₃)₂ aerosol particles deposited on ZnSe substrate have been investigated through in situ Fourier transform infrared-attenuated total reflection (FTIR-ATR) technique at the molecular level. At relative humidity (RH) of ∼3%, Mg(NO₃)₂ particles existed as amorphous states. The amorphous Mg(NO₃)₂ particles were transformed into crystalline Mg(NO₃)₂ · nH₂O (n ≤ 5) with slight increasing of RH. Thermodynamically stable Mg(NO₃)₂·6H₂O crystals were gradually formed on the particle surface and started to be dissolved at the saturation point (∼53% RH). At the same time, a continuous phase transition from Mg(NO₃)₂ · nH₂O (n≤5) to Mg(NO₃)₂·6H₂O occurred on the particle surface. This led the solid particles to completely deliquesce at 76% RH, which was much higher than the saturation point of 53% RH. In the efflorescence process, Mg(NO₃)₂ droplets entered into the supersaturated region due to the gradual evaporation of water. Finally, amorphous particles were formed when RH decreased below 5%. In the FTIR-ATR spectra of the supersaturated Mg(NO₃)₂ droplets, the absorbance of the symmetric stretching vibration of NO ₃ ⁻ (v ₁- NO ₃ ⁻ ) clearly became stronger. It resulted from the continuous formation of solvent share ion pairs (SIPs), and even the contact ion pairs (CIPs) between Mg²⁺ and NO ₃ ⁻ . Supported by the Trans-Century Program Foundation for the Talents by the Ministry of Education of China, the National Natural Science Foundation of China (Grant Nos. 20073004, 20473012, and 20673010), the 111 Project (B07012), and the State Key Laboratory of Physical Chemistry for Solid Surface of Xiamen University     

Preparation of Ba(Ti,Sn)O<Subscript>3</Subscript> thin films by PVP-assisted sol–gel method and their dielectric properties

Ba(Ti_1−x Sn _x )O₃ (x = 0.10 or 0.15) thin films were deposited on Si(100) and Pt(111)/TiO _x /SiO₂/Si(100) substrates via sol–gel spin-coating. Crack-free thin films could be obtained by single-step deposition, where the thickness was about 0.46 and 0.29 μm at 1000 and 2000 rpm, respectively. Circular delaminated parts 100 μm in diameter, however, tended to appear in thicker films deposited at 1000 rpm. On both kinds of substrates, the films were crystallized between 500 and 600 °C, where the perovskite phase emerged as the primary phase, and the formation of single-phase perovskite was basically achieved between 700–800 °C. The films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates, however, tended to have small SnO₂ and BaCO₃ diffraction peaks, which decreased with increasing spinning rate. The dielectric properties were evaluated on the films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates at 2000 rpm. The films prepared by single-step depositions had dielectric constants of 350 and 230, and dielectric loss of 0.30 and 0.10 at x = 0.1 and 0.15, respectively. The films prepared by two time deposition had dielectric constants of 450 and 250, and dielectric loss of 0.21 and 0.19 at x = 0.10 and 0.15, respectively.     

Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript>/Si substrate

(La_0.7Sr_0.3)MnO₃ thin films were deposited on SiO₂/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were grown on (La_0.7Sr_0.3)MnO₃-coated SiO₂/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm² and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.     

The microstructure and magnetic properties of Ni<Subscript>0.4</Subscript>Zn<Subscript>0.6</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> films prepared by spin-coating method

Nickel zinc ferrite (Ni_0.4Zn_0.6Fe₂O₄) films on Si (100) substrate were synthesized using a spin-coating method. The crystallinity of the Ni_0.4Zn_0.6Fe₂O₄ films with the thickness of about 386 nm became better as the annealing temperature increased. The films have smooth surface, relatively good packing density and uniform thickness. The volatilization of Zn is serious at 900 °C. With the increase of annealing temperature, the saturation magnetization M _s increases in the temperature ranging from 400 to 700 °C, however, decreases above 700 °C, and the coercivity H _c increases in the temperature range 400–800 °C, decreases above 800 °C. After annealed at 700 °C for 2 h in air with the heating rate 2 °C/min, the film shows a maximum saturation magnetization M _s of 349 emu/cc and low coercivity H _c of 66 Oe. The M _s is higher than others which prepared by this method, however, the H _c is lower. The M _s of Ni_0.4Zn_0.6Fe₂O₄ films annealed at 700 °C increases with increasing annealing time and the H _c changes slightly.     

Preparation and characterization of ZrWMoO<Subscript>8</Subscript> powders with different morphologies

ZrWMoO₈ powders with different morphologies were obtained using ammonium tungstate, molybdate tungstate and zirconium tungstate as the starting materials by dehydrating the precursor ZrWMoO₇(OH)₂(H₂O)₂. The precursor was studied by thermo-gravimetric and differential scanning calorimetry (TG-DSC). The influence of the gelling agents (HCl, HClO₄, HNO₃, H₂SO₄ and H₃PO₄) on the crystallization process and crystal morphology of the products prepared was investigated by X-ray powder diffraction (XRD), scanning electron micrograph (SEM) and X-ray fluorescence spectrometer (XRF). Results showed that the morphology of the ZrWMoO₈ particles can be simply adjusted by changing the gelling agents, and the thermal expansion coefficients of cubic ZrWMoO₈ prepared in HCl solution are −3.84 × 10⁻⁶ K⁻¹ from 100°C to 700°C. __________ Translated from Chemical Journal of Chinese University, 2007, 28(3): 397–401 [译自: 高等学校化学学报]     

Characteristics of Ag/Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>/p-Si heterostructure prepared by sol-gel processing

The metal-ferroelectric-semiconductor (MFS) heterostructure has been fabricated using Bi_3.25La_0.75Ti₃O₁₂ (BLT) as a ferroelectric layer by sol-gel processing. The effect of annealing temperature on phase formation and electrical characteristics of Ag/BLT/p-Si heterostructure were investigated. The BLT thin films annealed at from 500°C to 650°C are polycrystalline, with no pyrochlore or other second phases. The C-V curves of Ag/BLT/p-Si heterostructure annealed at 600°C show a clockwise C-V ferroelectric hysteresis loops and obtain good electrical properties with low current density of below 2×10⁻⁸ A/cm² within ±4 V, a memory window of over 0.7 V for a thickness of 400 nm BLT films. The memory window enlarges and the current density reduces with the increase of annealing temperature, but a annealing temperature over 600°C is disadvantageous for good electrical properties.     

Cu-particle-dispersed (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> composite thin films derived from sol–gel processing

Sol–gel processing of Cu-particle-dispersed (K_0.5Na_0.5)NbO₃ (Cu/KNN) thin films was studied in an attempt to develop a method producing piezoelectric composite films with good mechanical performance. The Cu/KNN films were prepared via crystallization annealing at 650–750 °C for 1 min in air, followed by reduction annealing at 400–500 °C for 1–2 h in a 5% H₂ and 95% Ar gas mixture. The resultant composite films consisted of perovskite KNN, metallic Cu, and Cu₄O₃. This suggests that the decomposition of Cu sources takes two different ways in this study. The Cu/KNN composite films containing Cu₄O₃ phases were produced by the crystallization annealing at 700 °C for 1 min followed by the reduction annealing at 500 °C for 1 h. Surface morphology observations reveal that these films have dense KNN matrix with a grain size of ~200 nm and uniformly dispersed Cu or Cu₄O₃ particles with a size of <500 nm.     

Low-temperature catalytic preparation of multi-wall MoS<Subscript>2</Subscript> nanotubes

In the catalytic reduction atmosphere of H₂+CH₄+C₄H₄S, the ball-milled precursor (NH₄)₂MoS₄ is heated to 300°C for decomposition. The as-synthesized product is characterized by XRD, SEM, HRTEM, EDX, and BET. The results show that multi-wall MoS₂ nanotubes are obtained. The length of the nanotubes is around 3–5 μm. The diameters of the nanotubes are homogeneous, with an inner diameter of ∼15 nm, an outer diameter of ∼30 nm, and an interlayer (002) d-spacing of 0.63 nm. This catalytic thermal reaction occurring at low temperatures is important for the large-scale preparation of similar transition-metal disulfide nanotubes.     

Thermal oxide synthesis and characterization of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> nanorods and Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowires

Fe₃O₄ nanorods and Fe₂O₃ nanowires have been synthesized through a simple thermal oxide reaction of Fe with C₂H₂O₄ solution at 200–600°C for 1 h in the air. The morphology and structure of Fe₃O₄ nanorods and Fe₂O₃ nanowires were detected with powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The influence of temperature on the morphology development was experimentally investigated. The results show that the polycrystals Fe₃O₄ nanorods with cubic structure and the average diameter of 0.5–0.8 μm grow after reaction at 200–500°C for 1 h in the air. When the temperature was 600°C, the samples completely became Fe₂O₃ nanowires with hexagonal structure. It was found that C₂H₂O₄ molecules had a significant effect on the formation of Fe₃O₄ nanorods. A possible mechanism was also proposed to account for the growth of these Fe₃O₄ nanorods. Supported by the Fund of Weinan Teacher’s University (Grant No. 08YKZ008), the National Natural Science Foundation of China (Grant No. 20573072) and the Doctoral Fund of Ministry of Education of China (Grant No. 20060718010)     

Synthesis and characterization of sol–gel derived Ag(Nb,Ta)O<Subscript>3</Subscript> nanopowder

Perovskite-type Ag(Nb_0.6Ta_0.4)O₃ nanopowder was prepared by the sol–gel process from the AgNO₃, Ta₂O₅ and Nb₂O₅, with help of K₂CO₃, avoiding use of strong corrosive acid or expensive niobium ethoxide and tantalum ethoxide. The results suggested that thermal decomposition of the xerogel took place when the xerogel was heated at 450 °C. Well-crystallized single-phased powder was obtained at low temperature about 680 °C. With the heat-treatment temperature increasing (680–1,100 °C), the intensity of the diffraction peaks increased. The crystallite size determined by Scherer formula and the result suggested that higher temperature lead to larger crystallite size. Moreover, the average grain size 30–50 nm was estimated by a field emission scanning electron microscope. The influence of holding time on microstructures indicated that the homogeneous and small grains were obtained at 800 °C for 2–4 h while larger ones for 8–16 h.     

Hydrothermal synthesis and thermodynamic properties of 2CaO·3B<Subscript>2</Subscript>O<Subscript>3</Subscript>·H<Subscript>2</Subscript>O

2CaO·3B₂O₃·H₂O which has non-linear optical (NLO) property was synthesized under hydrothermal condition and identified by XRD, FTIR and TG as well as by chemical analysis. The molar enthalpy of solution of 2CaO·3B₂O₃·H₂O in HCl·54.572H₂O was determined. From a combination of this result with measured enthalpies of solution of H₃BO₃ in HCl·54.501H₂O and of CaO in (HCl+H₃BO₃) solution, together with the standard molar enthalpies of formation of CaO(s), H₃BO₃(s), and H₂O(l), the standard molar enthalpy of formation of −(5733.7±5.2) kJ mol⁻¹ of 2CaO·3B₂O₃·H₂O was obtained. Thermodynamic properties of this compound were also calculated by a group contribution method.     

LaCrO<Subscript>3</Subscript> powder from lanthanum trisoxalatochromate(III) (LTCR) precursor

Lanthanum chromite LaCrO₃, an important catalyst and interconnect material used in solid oxide fuel cell was prepared from lanthanumtrisoxalatochromate(III) hydrate [LaCr(C₂O₄)₃]·9H₂O (LTCR) employing microwave heating technique. The compound LTCR heated in microwave heating system gave pure LaCrO₃ at 500°C within one hour. However LTCR heated in silicon carbide furnace yielded LaCrO₃ at 900°C. BET surface area of LaCrO₃ prepared by microwave and conventional heating techniques were found to be 2.8 and 1.2 m² g⁻¹, respectively. Thermogravimetry, differential thermal analysis and X-ray diffraction techniques were used to optimize the conditions for the microwave processing of the precursor.     

Sol–gel Al2O3/ZrO2 duplex films for protection of a γ-TiAl based alloy against high temperature oxidation

Al₂O₃/ZrO₂ duplex films were deposited on a γ-TiAl based alloy by sol–gel processing starting from aluminum isopropoxide (Al(OC₃H₇)₃) and zirconium (IV) oxychloride octahydrate (ZrOCl₂ · 8H₂O) as raw materials. Isothermal oxidation at 900 and 1,000 °C in 0.1 MPa O₂ and cyclic oxidation at 1,000 °C in air of the coated and uncoated specimens were performed to investigate the effect of the duplex films on the oxidation behavior of the γ-TiAl alloy. The results of the isothermal oxidation tests indicated that the parabolic rate constants of the alloy were decreased due to the applied thin film. Additionally, the present film exhibited a beneficial effect on the cyclic oxidation resistance of the alloy in air. The duplex film could restrain the growth of TiO₂, causing an increase of the Al₂O₃ content in the oxide mixture and thus decreased the oxidation rate.