SiO2薄膜的液相沉积及特性

将基片浸入到低温SiO2过饱和的六氟硅酸（H2SiF6)溶液中,在其表面上沉积SiO2薄膜,这种新的生长工艺称之为液相沉积（LPD）。本文着重介绍LPD工艺及LPDSiO2薄膜的特性。     

ECR-PECVD制备SiO2薄膜中衬底射频偏压的作用

采用微波电子回旋共振等离子体增强化学气相沉积（ECR－PECVD）技术在单晶衬底上制备了SiO2薄膜,研究了射频偏压对薄膜特性的影响。通过X射线光电子能谱（XPS）、傅里叶变换红外线光谱（FTIR）、原子力显镜（AFM）和扫描隧道显微镜（STM）三维形貌图测量等手段,对成膜特性进行了分析。实验结果表明,通过改变射频偏压的参数来控制离子轰击能量,对ECR－PECVD成膜的内应力、溅射现象、微观结构和化学计量均有明显的影响。     

有机染料TMQ掺杂的SiO2薄膜的光谱特性

采用溶胶 -凝胶法合成了紫外波段有机染料 TMQ掺杂的 Si O2 薄膜和块体材料。薄膜中掺杂的染料浓度高达 1.2 4× 10 -2 mol/ L,块体材料中染料浓度可掺至 1.5× 10 -3 mol/ L。由于Si O2 “笼”的束缚作用 ,在吸收光谱中未观察到二聚体的特征谱带 ,在荧光光谱中未观察到荧光猝灭现象 ;同时由于 Si O2 “笼”的极化作用 ,其吸收峰和发射峰的位置相对于其在环己烷溶液中的吸收峰和发射峰位置发生了 10 nm左右的红移。     

铁电薄膜铁电性能与温度关系的一种实时测量实验方法

介绍了一种实时测量铁电薄膜的铁电性能与温度关系的实验方法,为进一步研究铁电薄膜的特性提供了实验基础。     

实验条件对纳米多孔SiO2薄膜结构及特性的影响

关键词：     

电子束蒸发TiO2薄膜的光学特性

研究了不同工艺参数条件下，电子束蒸发TiO2薄膜的光学特性。在正交实验的基础上，利用离子束辅助沉积技术，获得了影响TiO2薄膜折射率的主要因素．得到了TiO2薄膜的折射率随氧气分压的关系。对离子氧和分子氧两种情况下TiO2薄膜的折射率进行了比较．得到了TiO2薄膜的折射率与沉积速度的关系，并给出了TiO2薄膜的红外吸收光谱。     

Plasma transformation of SiO films in SiO2 at room temperature

Oxygen plasma has been used to transform thin SiO deposited films into SiO₂ layers. Nuclear microanalysis, Rutherford backscattering and infrared spectroscopy have confirmed the formation of stoichiometric silicon dioxide by room temperature plasma anodization. Isotopic tracing experiments were carried out to study the ionic movements under high electric field [(1–2)X10⁷ V/cm] during oxide growth. This process differs strongly from the pure Si plasma anodization, and leads to the formation of a few tens nm thick SiO₂ films in sequential steps: low temperature deposition of SiO and low temperature plasma treatment.     

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.     

In situ investigation of ferromagnetism in magnetic nanolayers at room temperature

Ultrathin iron layers on different substrates and a Dy_{1 ? x} Ni _x /Nibilayer have been investigated in situ using the magneto-optical Kerr effect. Ferromagnetic ordering in the Dy_{1 ? x} Ni _x /Nistructure at room temperature has been established. A technique for estimating the thickness of the iron/silicon interface is proposed.     

Synthesis, characterization of chemically deposited indium selenide thin films at room temperature

Polycrystalline In₂Se₃ semiconducting thin films were prepared by using relatively simple chemical bath deposition method at room temperature by the reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium. Various preparative conditions of thin film deposition are outlined. The as grown films were found to be transparent, uniform, well adherent and red in color. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, atomic absorption spectroscopy and energy dispersive atomic X-ray diffraction (EDAX). The XRD analysis of the film showed the presence of polycrystalline nature with hexagonal crystal structure. SEM study revels that the grains are homogenous, without cracks or pinholes and well covers the glass substrate. The optical absorption and electrical conductivity was measured. The direct optical band gap value for the films was found to be of the order of 2.35 eV at room temperature and have specific electrical conductivity of the order of 10⁻² (Ω cm)⁻¹ showing n-type conduction mechanism. The utility of the adapted technique is discussed from the view-point of applications considering the optoelectric and structural data.     

Stochastic heating of plasma at electron cyclotron resonance

It is shown theoretically and experimentally that stochastic heating of plasma electrons is highly efficient. Calculations have shown that over the course of 100 periods of an external microwave field the kinetic energy of the particles reaches values of around 1.0 MeV and the average energy reaches values of the order of 0.3 MeV in the field of two oppositely propagating characteristic (eigen) waves of a cylindrical waveguide, with amplitudes 24 kV/cm in a 1 kG stationary magnetic field. Stochastic instability develops as a result of overlapping of non-linear cyclotron resonances. The experimental results agree with the theory: When these waves are excited by a 0.9 MW external source, above a threshold of 0.45 MW one obtains x rays with a photon energy corresponding to a maximum electron energy of the order of 1 MeV over about 800 periods of the external microwave field. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 11, 806–811 (10 June 1999)     

基片温度对SiNx薄膜结晶状态及机械性能的影响

利用微波电子回旋共振增强磁控反应溅射法在不同基片温度下制备无氢SiNx薄膜.通过傅里叶变换红外光谱、透射电子显微镜、台阶仪、纳米硬度仪等表征技术,研究了基片温度对SiNx薄膜结晶状态、晶粒尺寸、晶体取向等结晶性能以及薄膜的生长速率、硬度等机械性能的影响,并探讨了薄膜结晶性能与机械性能之间的关系.研究结果表明,在基片温度低于300℃时制备的SiNx薄膜以非晶状态存在,硬度值仅为18 GPa左右;基片温度在320-620℃范围内,SiNx薄膜中出现纳米晶粒,且晶粒尺寸随沉积温度的增加而增加,在沉积温度为620℃时达到最大,为20±1.5 nm;当沉积温度为700℃时,SiN<,x>薄膜的晶粒尺寸突然减小,但由于此时晶粒密度为最大,因此薄膜硬度达到最大值(36.7 GPa).     

Structural and mechanical properties of Al–C–N films deposited at room temperature by plasma focus device

The Al–C–N films are deposited on Si substrates by using a dense plasma focus(DPF) device with aluminum fitted central electrode(anode) and by operating the device with CH_4/N_2 gas admixture ratio of 1:1. XRD results verify the crystalline Al N(111) and Al_3CON(110) phase formation of the films deposited using multiple shots. The elemental compositions as well as chemical states of the deposited Al–C–N films are studied using XPS analysis, which affirm Al–N, C–C, and C–N bonding. The FESEM analysis reveals that the deposited films are composed of nanoparticles and nanoparticle agglomerates. The size of the agglomerates increases at a higher number of focus deposition shots for multiple shot depositions. Nanoindentation results reveal the variation in mechanical properties(nanohardness and elastic modulus)of Al–C–N films deposited with multiple shots. The highest values of nanohardness and elastic modulus are found to be about 11 and 185 GPa, respectively, for the film deposited with 30 focus deposition shots. The mechanical properties of the films deposited using multiple shots are related to the Al content and C–N bonding.     

Hysteretic microwave cyclotron resonance of a laterally confined 2 DEG

A hysteretic cyclotron resonance (CR) is discovered in a laterally confined high mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures. The hysteresis and switching phenomena are observed in microwave radiation (36 GHz) transmission at temperature 1.8–25 K. It is found that the hysteresis is accompanied by long-lived, microwave-induced changes of the 2DEG density. These density changes is attributed to a modification of electron vertical transport processes in heterostructures under the microwave heating of the 2DEG. A phenomenological model based on the 2DEG density-dependent CR, describes reasonably the main experimental findings.     

In situ photoemission study of the room temperature ferromagnet ZnGeP2:Mn

The chemical states of the ZnGeP(2):Mn interface which shows ferromagnetism above room temperature have been studied by photoemission spectroscopy. Mn deposition on the ZnGeP2 substrate heated to 400 degrees C induced Mn substitution for Zn and then the formation of metallic Mn-Ge-P compounds. Depth profile studies have shown that Mn 3d electrons changed their character from itinerant to localized along the depth, and in the deep region, dilute divalent Mn species (<5% Mn) was observed with a coexisting metallic Fermi edge of non-Mn 3d character. The possibility of hole doping through Mn substitution for Ge and/or Zn vacancy is discussed.