Microstructural and chemical transformation of thin Ti/Pd and TiD<Subscript><Emphasis Type="BoldItalic">y</Emphasis></Subscript>/Pd bilayer films induced by vacuum annealing

Using a combination of scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction and X-ray photoelectron spectroscopy (XPS), we made a comparative study of the high-temperature annealing impact on thin titanium deuteride (TiD _y ) films covered by an ultrathin Pd layer, and on Ti/Pd bilayer films. The bilayer films were prepared under ultrahigh vacuum conditions and were in situ annealed using the same annealing procedure. It was found that the surface and the bulk morphology of both films undergo different annealing-induced transformations, leading to an extensive intermixing between the Ti and Pd layers and the formation of a new PdTi₂ bimetallic phase. Energy-filtered TEM imaging and energy-dispersive X-ray spectrometry analysis, as well as XPS depth profiling all provided evidence of a different distribution of Pd and Ti in the annealed TiD _y /Pd film compared with the annealed Ti/Pd film. Our results show that thermal decomposition of TiD _y , as a consequence of annealing the TiD _y /Pd film, modifies the intermixing process, thereby promoting Ti diffusion into the Pd-rich top layer of the TiD _y film and thus providing a more likely path for the formation of the PdTi₂ phase than in an annealed Ti/Pd film. Figure Figure Microstructural and chemical characterisation of thin TiDy/Pd film after annealing     

Gold particles containing plasma-polymerized styrene as an X-ray absorber

Gold particles containing plasma-polymerized styrene film were formed simultaneously by plasma polymerization and evaporation using an inductively coupled argon gas flow type reactor. Gold was used as the evaporated metal and styrene as the monomer. The plasma etching characteristics of the film were evaluated by O₂ and CO₂ plasmas using a reactor with parallel-plate electrodes. A structure of lines and spaces of 4m width was successfully fabricated in the film on Si wafer by CO₂ plasma etching through a mask pattern of plasma-polymerized resist. A self-developed pattern was obtained through the X-ray mask with polyimide substrate by synchrotron radiation. The molecular structure and atomic composition of the film were investigated by ESCA and TEM.     

A novel dual surface modification on titanium in dental use: Characterization and topography

This laboratory study aimed to compare, contrast, and evaluate the effect of a novel dual surface modification method on the adhesion strength of resin composite cement to titanium. C.p.-2 grade titanium samples were silica-coated, etched with HNO₃(69vol %) or a blend of HCl (35vol %) and H₃PO₄ (85vol %), for 1 h at 80°C. Surface roughness was measured by surface roughness profilometry, topographic analysis by scanning electron microscopy (SEM), atomic force microscopy (AFM), and surface analyses by energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS). Silanization of all specimens was carried out after SEM, EDX, and AFM analysis, before enclosed mold microshear bond strength testing (EM-μSBS). Adhesion strengths were measured after artificial ageing: 1 day, 1 week, 4 weeks, and 8 weeks by EM-μSBS testing and failure mode analysis by optical microscopy. Polished titanium was used as a control. The highest surface roughness was observed in titanium samples treated with silica-coating + HCl-H₃PO₄ etching. The elemental composition confirmed the presence of Ti, O, C, with Si and Al in samples treated with silica-coating. A gradual decrease in EM-μSBS values was observed in all titanium samples with adhesive and cohesive failure modes. The novel dual surface modification method applied in this study suggests that silica-coating + HCl-H₃PO₄etching strongly affects titanium surface topography and roughness. The presence of Si on silica-coated surface modified titanium before silanization with an experimental silane has a positive effect on the EM-μSBS of titanium samples treated with silica-coating only or silica-coating + HNO₃ etching.     

Microchemical investigation of early iron metallurgy slags

A group of slags, dating back to Iron Age II (Aramean period, 800-720 B.C.), that appeared to be iron-smelting by-products, have been found at Tell Afis (North-Western Syria). The microchemistry of these materials has been studied by means of small-area X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), scanning electron microscopy (SEM), electron-probe microanalysis (EPMA) and optical microscopy (OM). The results indicate that the slags can be associated with an iron-smelting process and show the presence of large amounts of Fe(II) and Fe(III) oxides and hydroxides mixed with different glassy and crystalline silicon compounds. The latter consist essentially of quartz and various silicates, such as wollastonite, melilite, Mg[SiO₄] or Mg[SiO₆] compounds and other complex aluminosilicates. This chemical information is used to elucidate some aspects of the early ironmaking process.     

GDOES,XPS, and SEM with EDS analysis of porous coatings obtained on titanium after plasma electrolytic oxidation

In the paper, the glow discharge optical emission spectroscopy, X‐ray photoelectron spectroscopy, scanning electron microscopy, and energy‐dispersive X‐ray spectroscopy results of a commercial purity titanium grade 2 after plasma electrolytic oxidation (PEO), also known as micro arc oxidation (MAO), are presented. The PEO treatment was performed in the electrolyte containing concentrated (85%) phosphoric acid with copper nitrate at the voltage of 450 ± 10 V for 1 min. For the electrolyte, copper nitrate addition from 300 to 600 g/l was used. Porous coatings of specific properties were obtained. The measurements results allow to state that the copper and nitrogen ions can be introduced into the surface layer formed on pure titanium by the plasma electrolytic oxidation. The distributions of these elements were detected to depend on the electrolyte composition, with the highest amounts revealed in the coating created in the electrolyte containing 600 g Cu(NO₃)₂ in 1 l H₃PO₄. Three sub‐layers of the coating, displayed in this work by two models, were developed in the study. The analysis performed shows that under the PEO treatment in each of the electrolytes used, the formation of coating with the top sub‐layers always enriched in copper compounds was found. Copyright © 2016 John Wiley & Sons, Ltd.     

Influence of the Oxide Content in the Catalytic Power of Raney Nickel in Hydrogen Generation

The influence of oxides in the hydrogen evolution on Raney nickel electrocatalysts was characterized by electrochemical impedance measurements. In addition, these materials show competitive overpotentials for hydrogen evolution with a modified Watts bath as a binder for the Raney nickel. The optimum result was ?190?mV of overpotential at 100?mA?cm^?2. Oxygen in the Raney Ni catalyst affects its electroactivity toward hydrogen evolution. The source of oxygen is related to the presence of chloride ions in the modified Watts bath. A Watts bath binds Raney Ni particles to the surface of the catalysts and chloride regulates the oxygen content in the nickel binder during electrodeposition. High oxygen content increases the hydrogen evolution overpotential of the electrode. The electroactivity of the synthesized porous coatings was evaluated by polarization curves and impedance plots. In addition, surface characterization by X-ray diffraction, field emission–scanning electron microscopy equipped with energy-dispersive analysis, and X-ray photoelectron spectroscopy is reported.     

Plasma reactions of self-assembled monolayers to model oxygen atom effects on polymers

The plasma treatment of self-assembled monolayers of octadecyl mercaptan on gold substrates has been investigated as a model for oxygen atom effects on polymers. Both O₂ and H₂O low pressure gas plasmas have been used. X-ray photoelectron spectroscopy has revealed that the two plasma treatments differ from each other in the extent of oxidation and etch rate with O₂ being the more aggressive plasma. The results have confirmed that the plasma modification of organic surfaces involves a balance between surface oxidation and surface etching. The well-defined structure of the monolayer enables quantitation of these atom-substrate reactions. © 1998 John Wiley & Sons, Ltd.     

Investigation of Ti/CuO interface by X-ray photoelectron spectroscopy and atomic force microscopy

The Ti/CuO interface has been studied by the techniques of X-ray photoelectron spectroscopy and atomic force microscopy. Thin films of titanium were deposited on a CuO substrate at room temperature by the e-beam technique. The photoelectron spectra of titanium and copper were found to exhibit significant chemical interaction at the interface. The titanium overlayer was observed to get oxidized to TiO₂, while the CuO was observed to get reduced to elemental copper. This chemical interaction was observed to occur until a thickness of 7 nm of the titanium overlayer. For thicknesses greater than this value, the presence of unreacted titanium in the sample was detected. Barrier characteristics at the Ti/CuO interface were also carried out for substrate temperatures of 300°C, 400°C, 500°C, and 600°C as a function of the titanium overlayer thickness. A linear trend in the barrier thickness of the overlayer was observed between 400°C and 600°C substrate temperatures. The atomic force microscopy micrographs of the unannealed samples depicted layer-by-layer growth of elemental titanium on copper. At the Ti/CuO interface in such samples, the micrographs exhibited island formation of TiO₂ corresponding to the Volmer-Weber growth model. This formation has been interpreted as the relaxation in the strain energy. The percentage coverage of the underlying substrate by the TiO₂ islands showed a linear trend for the thicknesses of the titanium overlayer investigated. The average size of these islands also showed a linear trend as a function of the thickness of the overlayer.     

Synthesis and structural characterization of tris (methacrylato)chromium(III)

A straightforward synthetic route to produce tris(methacrylato)chromium(III), Cr(O₂C(CH₃)C=CH₂)₃, by reacting sodium methacrylate with an aqueous solution of CrCl₃ gave a blue microcrystalline powder, insoluble in most common solvents. Electronic spectroscopy (UV-Vis), electron paramagnetic resonance (EPR), Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS), were employed to characterize Cr(O₂C(CH₃)C=CH₂)₃. Morphology and elemental composition of this compound were determined using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX), respectively. Spherical particles of approximately 2.5 µm in diameter were obtained. Thermal stability of the product was investigated via thermogravimetric analysis (TGA). The spectroscopic studies revealed that the coordination sphere around the chromium ion corresponds to a chelating bidentate carboxylate-Cr(III) complex. Thermal stability above 350°C, and spherical shape particles of few micrometers in diameter, suggest a potential application of this novel compound as a catalyst in oxidation reactions.     

Characteristics and durability of fluoropolymer thin films

The use of plasma-polymerised fluoropolymer (CF_xO_y) thin films in the manufacture of microelectromechanical systems (MEMS) devices is well-established, being employed in the passivation step of the deep reactive ion etching (DRIE) process, for example. This paper presents an investigation of the effect of exposure to organic and aqueous liquid media on plasma-polymerised CF_xO_y thin films. Atomic force microscopy (AFM), scanning electron microscopy (SEM), ellipsometry, X-ray photoelectron spectroscopy (XPS) and dynamic wetting measurements were all employed as characterisation techniques. Highly basic aqueous solutions, including known silicon etchants, were found to cause delamination via degradation of the countersurface below the CF_xO_y thin film. Films were found to be stable in organic solvents, acidic aqueous solutions and slightly basic aqueous solutions.     

Surface properties of the Ni-Cu-Cr oxide catalyst for dehydrogenative hydrolysis of amines

Catalysts for dehydrogenative hydrolysis of amines, prepared by sorption of copper ions from a solution on a preformed Ni-Cr oxide system, were studied by Auger electron spectroscopy, X-ray photoelectron spectroscopy, and IR spectroscopy of adsorbed CO and NH₃ probe molecules. It was shown that on adsorption copper blocked the chromium ions in the Ni-Cr catalyst with concomitant stabilization as Cu⁺. The incorporation of copper into the Ni-Cr system increased the ability of nickel to reduce water with the formation of oxygen-containing complexes.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 2, pp. 288–291, February, 1993.     

Structural and electronic properties of HfO2 films on Si through H2O2 wet oxidation with improved thermal stability

The thermal stability and material properties of HfO₂ thin films on Si substrates with and without H₂O₂ wet chemical oxidation were investigated. The HfO₂ samples were deposited through plasma-enhanced atomic layer deposition and subjected to thermal annealing. They were then examined using X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, and conductive atomic force microscopy. For the Si substrate without H₂O₂ wet chemical oxidation, a native oxide (~1.8 nm) was formed on the substrate before HfO₂ deposition. After the annealing process at 600°C, the band gap (E_g) of the HfO₂ films increased from 6.0 to 6.2 eV due to the diffusion of Si into HfO₂. Furthermore, the conduction and valence band offsets (ΔE_c and ΔE_v, respectively) between HfO₂ and Si changed from 1.02 to 1.42 and 3.86 to 3.66 eV, respectively. After the H₂O₂ wet oxidation of the Si substrate, a 1.5-nm chemical oxide was formed instead of a native oxide. The band offset and E_g values of HfO₂ were similar before and after 600°C annealing (ΔE_v = 3.86 eV, ΔE_c = 1.02 eV, and E_g = 6.0 eV), implying the high thermal stability of the HfO₂ films. Accordingly, wet oxidation not only prevents diffusion from chemical oxide but also markedly improves the oxide leakage current, which is useful for developing highly efficient and thermally stable HfO₂ gate oxides in Si-based integrated circuit devices.     

H2 plasma development of X-ray imaged patterns on plasma-polymerized resists

An X-ray imaged pattern on a plasma-polymerized film was successfully developed by H₂ plasma etching. Plasma-polymerized MMA and 6FBMA were formed by using an inductively coupled argon flow type reactor. An X-ray imaged pattern on the film was attained through a knife-cut window of a gold plate. The X-ray was generated from a Cu target at 20 kV and main wavelength 1.54 Å. The pattern development was performed using a tubular type reactor with parallel plate electrodes. The quality of plasma-polymerized resists in an X-ray lithography was evaluated by comparing it with the conventional polymer in the dry and wet process, and the minimum dose rate for a visible pattern fabrication was measured to be 4.1 J/cm² for both resists in H₂ plasma etching development.     

Determination of ZnO(0001) surface termination by x‐ray photoelectron spectroscopy at photoemission angles of 0° and 70°

We present an XPS method to determine the termination of the ZnO(0001) surface. By measuring O 1s and Zn 2p_3/2 core‐level x‐ray photoelectron spectra at photoemission angles of 0° and 70° and comparing the intensity ratio (I_O1s/I_Zn2p3)_θ=0/(I_O1s/I_Zn2p3)_θ=70, the Zn and O termination can be distinguished. Calculations show that these two terminations have intensity ratios differing by ～17%. This difference is not affected by a contamination layer provided that the contamination layer thickness is the same for these two differently terminated surfaces. Although this determination method prefers a clean ZnO(0001) surface (in situ measurement), it seems also feasible for surfaces with known contamination layer thickness (ex situ measurement). We have measured ex situ ZnO(0001)‐Zn, ZnO(000&1macr;)‐O single crystals and an epitaxial ZnO film deposited on Al₂O₃(0001). The measured intensity ratios of the first two samples agree with the calculated values for a 0.2 and 0.26 nm contamination layer, respectively. The intensity ratio and the O 1s contamination component intensity of the epitaxial ZnO film are close to those of the ZnO(0001)‐Zn single crystal thus pointing at Zn termination of the film. Copyright © 2004 John Wiley & Sons, Ltd.     

Electrochemical study of spinel oxide systems with nominal compositions Ni1− x Cu x Co2O4 and NiCo2− y Cu y O4

Studies on the electrochemical behaviour of Ni_{1− x} Cu _x Co₂O₄ (x ≤ 0.75) and NiCo_{2− y} Cu _y O₄ (y ≤ 0.30) electrodes in 5 mol dm⁻³ KOH aqueous solutions are presented. The oxide layers have been prepared by thermal decomposition of aqueous nitrate solutions on nickel supports at 623 K. Powder samples were also prepared by thermal decomposition under the same conditions. The powder samples and the oxide layers were characterised by X-ray powder diffraction. The influence of the copper content on the voltammetric response of the electrodes and activity towards oxygen evolution reaction is analysed and correlated with the surface composition of the electrodes by means of X-ray photoelectron spectroscopy data. The analysis of the results reveals that the presence of Cu affects the electrode behaviour and its influence depends on which cation has been replaced. Received: 22 February 1999 / Accepted: 26 October 1999     

Relative sensitivity factors for hard X-ray photoelectron spectroscopy with photon energies of 3.0, 5.9, 7.9, and 9.9 keV

Empirical relative sensitivity factors (RSFs) for the 1s, 2p_3/2, and 3d_5/2 levels relative to O1s were derived from the hard X-ray photoelectron spectroscopy measurements with photon energies of 3.00, 5.95, 7.94, and 9.92 keV. The data for 5.95, 7.94, and 9.92 keV were obtained at BL46XU in SPring-8, and those for 3.00 keV were obtained at BL6N1 in AichiSR (note that the measurement conditions, i.e., electron spectrometer and measurement geometry, at the two beamlines were different; for details, see Section >3). It was found that the empirical RSFs showed the linear behaviors as a function of the binding energy on a log–log plot. Also, from the comparison of the empirical RSFs and the theoretical RSFs calculated from Hartree–Slater cross sections reported by Scofield combined with the energy dependence on the spectrometer function and the inelastic mean free path, it is observed that there is an agreement between the empirical and the theoretical RSF values with several exceptions.     

X-ray photoelectron spectroscopic studies of the charged state of 3d metal ions in CuCr1?xVxS2 (x = 0–0.4)

The charged state of the 3d metal ions in layered cation-substituted disulfides CuCr_1−x V _x S₂ was studied by X-ray photoelectron spectroscopy. An analysis of the energy positions and structure of the Cu2p _3/2 and Cr2p _3/2 X-ray photoelectron lines showed that the corresponding polycrystalline samples of CuCr_1−x V _x S₂ contained mixed-valence chromium and copper ions. It was shown that the charged states of chromium and copper ions depended on the concentration of vanadium cations (x). The presence of mixed-valence Cu¹⁺ and Cu²⁺ ions in CuCr_1−x V _x S₂ may be correlated with the crystal structure of the corresponding layered disulfides. Original Russian Text Copyright ? 2009 by L. N. Mazalov, V. V. Sokolov, N. A. Kryuchkova, E. I. Vovk, I. Yu. Filatova, and G. M. Abramova __________ Translated from Zhurnal Strukturnoi Khimii, Vol. 50, No. 3, pp. 461–467, May–June, 2009.     

Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures

Vinyl iodide (C₂H₃I) microwave discharges with additions of H₂ and Ar are found to provide faster etch rates than conventional CH₄/H₂/Ar discharges for InP, InGaAs, GaAs, and AlGaAs. This is a result of the relatively high volatilities of indium, gallium, and aluminum iodide species. The etched features are smooth and anisotropic over a wide range of do self-biases (–150 to –350 V), process pressures (1–20mTorr), and microwave powers (150–500 W). The polymer that forms on the mask during the plasma exposure can be readily removed in O₂ discharges. Electron spectroscopy for chemical analysis (ESCA) showed that the etched surfaces are slightly deficient in the group V elements under most conditions, but changes to the optical properties of the semiconductors are minimal. No defects are visible by transmission electron microscopy (TEM) in GaAs or InP samples etched at dc biases –250 V.     

Reactive sputter etching of magnetic materials in an HCl plasma

In an rf low-pressure HCl plasma NiZn and MnZn ferrite etch up to five times as fast as in an otherwise comparable Ar sputter etch process. Selectivity towards Al₂O₃ as an etch mask is of order 10. No redeposited material and very little trenching are seen. The etched slopes have a steepness up to 70°, resulting from redeposition and enhanced etching on the sidewalls. This is shown by experiments and by computer simulations.     

Electrochemical and surface analytical study of the formation of oxide films on monel-400 and copper in alkaline media

The nature of the oxide films formed on monel-400 and copper in presence of NaOH and N-methylpyrrolidine (a volatile amine) at pH 9.5 and in 0.1 M KNO₃ medium were investigated. The oxide films were grown by applying an anodic potential of +0.4 V (vs saturated calomel electrode) for 30 min. The compositions of the surface oxide films were analysed by X-ray photoelectron spectroscopy. In the case of copper in NaOH medium, Cu(0) and a very small amount of copper hydroxide were observed. However, in amine medium, Cu(0) and Cu-amine complex were found. For monel in NaOH, the anodic film was found to contain hydroxides of both copper and nickel. After sputtering, this film showed a small amount of metal oxide below the hydroxide layer as confirmed by the oxygen peak. In amine medium the anodic film was found to contain only nickel hydroxide and metallic copper. The depth profile analysis of films showed that the film developed was very thin and the nickel hydroxide was sputtered very easily from the film. Received: 27 May 1997 / Accepted: 8 September 1997