Direct Patterning and Biofunctionalization of a Large‐Area Pristine Graphene Sheet

Direct patterning of streptavidin and NIH 3T3 fibroblast cells was successfully achieved over a large‐area pristine graphene sheet on Si/SiO₂ by aryl azide‐based photografting with the conventional UV lithographic technique and surface‐initiated, atom transfer radical polymerization of oligo(ethylene glycol) methacrylate.     

Surface characterization of the SiOx films prepared by a remote atmospheric pressure plasma jet

The deposition rate and surface properties of SiO_x films were prepared and investigated using remote atmospheric pressure plasma (APP) jet. The APP, generated with low frequency power at 16 kHz, was fed with tetraethoxysilane (TEOS)/air gas mixture. After deposition, the SiO_x films were analyzed for chemical characteristics, elemental composition, surface morphology, and hardness. It was found that the deposition substrate temperature is the key factor to affect the deposition rate of remote APP chemical vapor deposition process. Fourier transform infrared (FTIR) spectra indicated that APP deposited SiO_x films are an inorganic feature. XPS examination revealed that the SiO_x films contained approximately 30% silicon, 58% oxygen and 12% carbon. Atomic forced microscopy (AFM) analysis results indicated a smooth surface of SiO_x films in deposition under higher substrate temperature. Also, pencil hardness tests indicated that the hardness of APP deposited SiO_x films was greatly improved with increasing substrate temperatures. Copyright © 2008 John Wiley & Sons, Ltd.     

Defect‐Assisted Covalent Binding of Graphene to an Amorphous Silica Surface: A Theoretical Prediction

We propose a mechanism for defect‐assisted covalent binding of graphene to the surface of amorphous silica (a‐SiO₂) based on first‐principles density functional calculations. Our calculations show that a dioxasilirane group (DOSG) on a‐SiO₂ may react with graphene to form two Si? O? C linkages with a moderate activation barrier (≈0.3 eV) and considerable exothermicity (≈1.0 eV). We also examine DOSG formation via the adduction of molecular O₂ to a silylene center, which is an important surface defect in a‐SiO₂, and briefly discuss modifications in the electronic structure of graphene upon the DOSG‐assisted chemical binding onto the a‐SiO₂ surface.     

Optimization of Graphene Layers Grown on Pt/Ti/SiO2 by Hot Filament Chemical Vapor Deposition

Large area single and bilayer graphene are grown on Pt/Ti/SiO₂ substrates by hot filament chemical vapor deposition (HFCVD) with and without the assistance of Cu foil. The quality and number of graphene layers deposited on the substrate are assessed by Raman Spectroscopy. Atomic Force Microscopy (AFM) is used for assessing the surface topography of the graphene films grown on the Pt/Ti/SiO₂ substrates. The microstructure and elemental analyses are performed by Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS). The results show that bilayer graphene growth is facilitated by a copper foil placed nearby Pt/Ti/SiO2 substrate and by a high filament temperature in the HFCVD reactor. Monolayer graphene grows only when no copper foil is placed near the Pt/Ti/SiO₂ substrate at a low filament temperature. The approach paves a novel pathway towards the layer-controlled growth of graphene on Pt/Ti/SiO₂ substrates by HFCVD for frontier applications.     

Isoelectric points of plasma‐modified and aged silicon oxynitride surfaces measured using contact angle titrations

Acid‐base properties of metal oxides and polymers can control adhesion properties between materials, electrical properties, the physical structure of the material and gas adsorption behavior. To determine the relationships between surface isoelectric point, chemical composition and aging effects, plasma‐surface treatment of amorphous silicon oxynitride (SiO_xN_y) substrates was explored using Ar, H₂O vapor, and NH₃ inductively coupled rf plasmas. Overall, the Ar plasma treatment resulted in nonpermanent changes to the surface properties, whereas the H₂O and NH₃ plasmas introduced permanent chemical changes to the SiO_xN_y surfaces. In particular, the H₂O plasma treatments resulted in formation of a more ordered SiO₂ surface, whereas the NH₃ plasma created a nitrogen‐rich surface. The trends in isoelectric point and chemical changes upon aging for one month suggest that contact angle and composition are closely related, whereas the relationship between IEP and composition is not as directly correlated. Copyright © 2010 John Wiley & Sons, Ltd.     

User-friendly methodology for chemical vapor deposition –grown graphene-layers transfer: Design and implementation

An ecofriendly wet-chemical methodology for the transfer of chemical vapor deposition–grown, two-dimensional (2D) graphene layers onto desired surfaces is proposed and demonstrated by transferring the graphene monolayers (GMLs) onto Si/SiO₂ substrates. The quality and purity of transferred graphene layers along with their uniformity and electrical characteristics were examined. Furthermore, the areal uniformity of the transferred layers is explored by fabricating the devices with a configuration of graphene/insulator/metal (GIM). The transferred GMLs over Si/SiO₂ substrates exhibited good uniformity with high chemical purity along with excellent electrical characteristics. The GIM-based devices fabricated over planar substrates showed high conductivity and low leakage current density. Based on these demonstrated outcomes, it is emphasized that the proposed methodology can be adopted for the transfer of any 2D materials irrespective of their size by avoiding chemical exposure and failure of the fabrication process that are the major hurdles in the conventional approach.     

Fabrication of new polypyrrole/silicon nitride hybrid materials for potential applications in electrochemical sensors: Synthesis and characterization

In this research, an efficient fabrication process of conducting polypyrrole (PPy)/silicon nitride (Si₃N₄) hybrid materials were developed in order to be employed as transducers in electrochemical sensors used in various environmental and biomedical applications. The fabrication process was assisted by oxidative polymerization of pyrrole (Py) monomer on the surface of Si/SiO₂/Si₃N₄ substrate in presence of FeCl₃ as oxidant. To improve the adhesion of PPy layer to Si₃N₄ surface, a pyrrole-silane (SPy) was chemically bonded through silanization process onto the Si₃N₄ surface before deposition of PPy layer. After Py polymerization, Si/SiO₂/Si₃N₄-(SPy-PPy) substrate was formed. The influence of SPy concentration and temperature of silanization process on chemical composition and surface morphology of the prepared Si/SiO₂/Si₃N₄-(SPy-PPy) substrates was studied by FTIR and SEM. In addition, the electrical properties of the prepared substrates were characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). It was found that the best silanization reaction conditions to get Si/SiO₂/Si₃N₄-(SPy-PPy) substrate with high PPy adhesion and good electrical conductivity were obtained by using SPy at low concentration (4.3 mM) at 90°C. These promising findings open the way for fabrication of new hybrid materials which can be used as transducers in miniaturized sensing devices for various environmental and biomedical applications.     

Comparative Investigation of Mo(CO)6 Adsorption on Clean and Oxidized Si(111) Surfaces

Mo(CO)₆ adsorption on the clean, oxygen-precovered and deeply oxidized Si(111) surfaces was comparatively investigated by high-resolution electron energy loss spectroscopy. The downward vibrational frequency shift of the C-O stretching mode in adsorbed Mo(CO)₆ illustrates that different interactions of adsorbed Mo(CO)₆ occur on clean Si(111) and SiO₂/Si(111) surfaces, weak on the former and strong on the latter. The strong interac-tion on SiO₂/Si(111) might lead to the partial dissociation of Mo(CO)₆, consequently the formation of molybdenum subcarbonyls. Therefore, employing Mo(CO)₆ as the precursor, metallic molybdenum could be successfully deposited on the SiO₂/Si(111) surface but not on the clean Si(111) surface. A portion of the deposited metallic molybdenum is transformed into the MoO₃ on the SiO₂/Si(111) surface upon heating, and the evolved MoO₃ finally desorbs from the substrate upon annealing at elevated temperatures.     

Probing interfacial interactions of nafion ionomer: Thermal expansion of nafion thin films on substrates of different hydrophilicity/hydrophobicity

Interfacial interactions of Nafion ionomer with superhydrophilic (Pt, Au), hydrophilic (SiO₂), and hydrophobic (graphene, octyltrichlorosilane [OTS]‐modified SiO₂) is investigated, using in situ thermal ellipsometry, by quantification of substrate‐ and thickness‐dependent thermal properties of the ultrathin Nafion films of nominal thickness ranging 25–135 nm. For sub‐50 nm thin Nafion films, the thermal expansion coefficient of films decreased in the order of most hydrophobic to most hydrophilic substrate: OTS > graphene > SiO₂ > Au > Pt, implying weaker interpolymer and polymer–substrate interactions for films on hydrophobic substrates. Expansion coefficient of films on SiO₂, graphene, and OTS‐modified SiO₂ decreased with thickness whereas that of films on Au and Pt substrates increased with thickness. Above ~100 nm of thickness, films on all substrates converged toward a common value representative of bulk Nafion. Thermal transition temperature was found to be higher for films on hydrophilic SiO₂ than that for films on hydrophobic graphene and OTS‐modified SiO₂ but was not discernible for films on Au and Pt substrates. © 2019 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2019 , 57, 343–352     

Optimization of Parameters of Graphene Synthesis on Copper Foil at Low Methan Pressure

Graphene films on copper foils were synthesized using low-pressure (2200-2800 Pa) chemical vapor deposition (CVD) from methane/hydrogen mixtures. The number of graphene layers is shown to be dependent on the composition of gas mixture and synthesis parameters. The annealing procedure of copper foils used as substrates was optimized to obtain high quality graphene. Atomic and electronic structures of graphene on copper and SiO₂/Si substrates were studied by Raman, X-ray photoelectron, and near-edge X-ray absorption fine structure spectroscopy methods.     

Organic Thin Film Transistors Based on 2,3‐Dimethylpentacene and 2,3‐Dimethyltetracene

2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO₂/Si surface. Thin film transistors prepared on SiO₂/Si and n‐nonyltrichlorosilane‐modified SiO₂/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO₂/Si substrate gave the highest field‐effect mobility of 0.46 cm²/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm²/Vs.     

A zirconium modified Co/SiO2 Fischer-Tropsch catalyst prepared by dielectric-barrier discharge plasma

Co/SiO₂ and zirconium promoted Co/Zr/SiO₂ catalysts were prepared using dielectric-barrier discharge (DBD) plasma instead of the conventional thermal calcination method. Fischer-Tropsch Synthesis (FTS) performances of the catalyst were evaluated in a fixed bed reactor. The results indicated that the catalyst treated by DBD plasma shows the higher FTS activity and yield of heavy hydrocarbons as compared with that treated by the conventional thermal calcination method. Increase in CO conversion was unnoticeable on the Co/SiO₂ catalyst, but significant on the Co/Zr/SiO₂ catalyst, both prepared by DBD plasma. On the other hand, heavy hydrocarbon selectivity and chain growth probability (α value) were enhanced on all the catalysts prepared by the DBD plasma. In order to study the effect of the DBD plasma treatment on the FTS performance, the catalysts were characterized by N₂-physisorption, H₂-temperature programed reduction (H₂-TPR), H₂-temperature-programmed desorption (H₂-TPD) and oxygen titration, transmission electron microscope (TEM) and X-ray diffraction (XRD). It was proved that, compared with the traditional calcination method, DBD plasma not only could shorten the precursor decomposition time, but also could achieve better cobalt dispersion, smaller Co₃O₄ cluster size and more uniform cobalt distribution. However, cobalt reducibility was hindered to some extent in the Co/SiO₂ catalyst prepared by DBD plasma, while the zirconium additive prevented significantly the decrease in cobalt reducibility and increased cobalt dispersion as well as the FTS performance.     

Infrared Spectroscopic Analysis of Plasma-Treated Si(100)-Surfaces

 Infrared reflection spectroscopy (specular reflection, attenuated total reflection) has been applied in combination with spectroscopic ellipsometry and electron microscopy to analyze the surface structure of plasma-treated Si(100) surfaces. It is shown that plasma treatments in oxygen and fluorine or chlorine-containing gases cause the formation of a thin surface layer having thicknesses of a few nanometers. The layer was identified to consist of SiO₂ for treatments in an oxygen plasma. Analyses of layers formed by treatments in a fluorine-containing plasma do not confirm the generally assumed model. Different Si-F vibration modes were identified in the surface layer caused by a SF₆ plasma. They correlate, however, with SiF and SiF₂ molecules. There are no indications of the existence of the generally assumed SiF₄. Neither has SiOF₂ been proven in layers produced by etching in a SF₆/O₂ plasma.     

Gold particles containing plasma-polymerized styrene as an X-ray absorber

Gold particles containing plasma-polymerized styrene film were formed simultaneously by plasma polymerization and evaporation using an inductively coupled argon gas flow type reactor. Gold was used as the evaporated metal and styrene as the monomer. The plasma etching characteristics of the film were evaluated by O₂ and CO₂ plasmas using a reactor with parallel-plate electrodes. A structure of lines and spaces of 4m width was successfully fabricated in the film on Si wafer by CO₂ plasma etching through a mask pattern of plasma-polymerized resist. A self-developed pattern was obtained through the X-ray mask with polyimide substrate by synchrotron radiation. The molecular structure and atomic composition of the film were investigated by ESCA and TEM.     

Effect of substrate on phase formation and surface morphology of sol-gel lead-free KNbO3, NaNbO3, and K0.5Na0.5NbO3 thin films

Environmentally acceptable lead-free ferroelectric KNbO₃ (KN) or NaNbO₃ (NN) and K_0.5Na_0.5NbO₃ (KNN) thin films were prepared using a modified sol-gel method by mixing potassium acetate or sodium acetate or both with the Nb-tartrate complex, deposited on the Pt/Al₂O₃ and Pt/SiO₂/Si substrates by a spin-coating method and sintered at 650°C. X-ray diffraction (XRD) analysis indicated that the NN and KNN films on the Pt/SiO₂/Si substrate possessed a single perovskite phase, while NN and KNN films on the Pt/Al₂O₃ substrate contained a small amount of secondary pyrochlore phase, as did KN films on both substrates. Scanning electron microscopic (SEM) and atomic force microscopic (AFM) analyses confirmed that roughness R _q of the thin KNN/Pt/SiO₂/Si film (?? 7.4 nm) was significantly lower than that of the KNN/Pt/Al₂O₃ film (?? 15 nm). The heterogeneous microstructure composed of small spherical and larger needle-like or cuboidal particles were observed in the KN and NN films on both substrates. The homogeneous microstructure of the KNN thin film on the Pt/SiO₂/Si substrate was smoother and contained finer spherical particles (?? 50 nm) than on Pt/Al₂O₃ substrates (?? 100 nm). The effect of different substrates on the surface morphology of thin films was confirmed.     

Study of reactive ion etching of Si and SiO2 for CFxCl4−x gases

A parametric study of the etching of Si and SiO₂ by reactive ion etching (RIE) was carried out to gain a better understanding of the etching mechanisms. The following fluorocarbons (FCs) were used in order to study the effect of the F-to-Cl atom ratio in the parent molecule to the plasma and the etching properties: CF₄, CF₃Cl, CF₂Cl₂, and CFCl₃ (FC-14, FC-13, FC-12, and FC-11 respectively). The Si etch rate uniformity across the wafer as a function of the temperature of the wafer and the Si load, the optical emission as a function of the temperature of the load, the etch rate of SiO₂ as a function of the sheath voltage, and the mass spectra for each of the FCs were measured. The temperature of the wafer and that of the surrounding Si load strongly influence the etch rate of Si, the uniformity of etching, and the optical emission of F, Cl, and CF₂. The activation energy for the etching reaction of Si during CF₄ RIE was measured. The etch rate of Si depends more strongly on the gas composition than on the sheath voltage; it seems to be dominated by ion-assisted chemical etching. The etching of photoresist shifted from chemical etching to ion-assisted chemical etching as a function of the F-to-Cl ratio and the sheath voltage. The etch rate of SiO₂ depended more strongly on the sheath voltage than on the F-to-Cl ratio.     

Assembly of Graphene Nanosheets and SiO2 Nanoparticles Towards Transparent,Antireflective, Conductive,and Superhydrophilic Multifunctional Hybrid Films

A new approach for the fabrication of transparent, antireflective, conductive and superhydrophilic multifunctional hybrid films through the layer‐by‐layer (LbL) assembly of reduced graphene oxide (RGO) nanosheets and SiO₂ nanoparticles is reported. The RGO nanosheets, SiO₂ nanoparticles and films were characterized by means of transmission electron microscopy, UV/Vis absorption spectrophotometry, Raman spectroscopy, atomic force microscopy, contact angle/interface system, and a four‐point probe. It was found that the graphene/SiO₂ hybrid films exhibited a significant increase in transmittance as compared with RGO films. The optical, electronic and wetting properties of hybrid films could be manipulated by rational design of the film structure and variation of the cycle number of the LbL assembly. The obtained transparent, conductive, and superhydrophilic graphene/SiO₂ hybrid films showed excellent antireflective, antistatic, and antifogging behaviors. The remarkable performance could be attributed to the combination of electrical conductivity of RGO nanosheets and superhydrophilic antireflective surface derived from SiO₂ nanoparticles.     

Effects of colloidal and dissolved silica on the dissolution of UO2 nuclear fuel in groundwater leaching tests

The influence of aqueous silica of two different physical forms (dissolved ions and SiO₂ colloid) on the dissolution of UO₂ nuclear fuel material was investigated at 95 °C temperature in autoclaves. It was tested that SiO₂ colloids can contribute to the surface degradation or act as carrier for uranium ions during a near field geochemical dissolution process. In the presence of colloids, well-crystallized secondary phases containing U and Si were formed on the surfaces, the latter attacked by the treatment. This was not the case when dissolved Si was used. SiO₂ colloids were partly found in their original form on the surfaces after 1000 hours at 95 °C. A surface charge model suggests that this different effects are due to the development of electrostatic interactions between the UO₂ and SiO₂ surfaces.This revised version was published online in November 2005 with corrections to the Cover Date.     

Effects of process parameters on ultrafine SiC synthesis using induction plasmas

A study is reported of the formation of ultrafine SiC powder through the reaction of elemental silicon and CH₄ in an induction plasma. The reaction route used involved in the first place the vaporization of a fine elemental silicon powder axially injected into the center of the discharge followed by the carburization reaction through the coinjection of CH₄. The powder obtained was composed of a mixture of α- and β-SiC with varying amounts of free carbon and free silicon. The particle size distribution was typically in the range of 40–60 nm with a corresponding specific surface area of 30–50 m²/g. A parametric study showed that the quality of the powder obtained varied with the plasma plate power and the position of the injection probe. The plasma gas composition employed was found to influence the proportions of α- and β-SiC in the synthesized SiC powder. With an Ar/N₂ mixture as the plasma gas, the ratio of the α to β phases was less than 1.0, whereas the ratio was greater than 1.5 when using a mixture of Ar/H₂ as plasma gas. The Si powder feed rate and the input C/Si molar ratio in the injected reactants significantly affected both the formation of the SiC and the free Si and free C content in the synthesized powder. Lining the cylindrical reactor wall with graphite resulted in improved conversion of Si to SiC. The weight fraction of the powder collected at different sections of the reactor system varied with the reactor operating conditions. The experimental results support the view that the formation mechanism for ultrafine SiC is dominated by the reaction of Si vapor with the thermal decomposition products of CH₄.     

Crystallization of textured PbTiO3 films deposited from gels

Sol-gel processed PbTiO₃ thin films have been deposited by spin coating onto different subtrates; Si[111], Si/Al, Si/SiO₂/Cr/Pt, MgO[100], SrTiO₃[100] and sapphire. Interactions between the substrate and PbTiO₃ films after heat treatment have been studied by X-ray diffraction and Rutherford Back Scattering. When deposited onto sapphire and Si[111], PbTiO₃ films exhibit a preferred orientation with (101) perpendicular to the substrate. These films become oriented along (100) onto MgO and (001) onto SrTiO₃[100] substrates. A strong channelling effect is observed by the RBS technique when the film is oriented along the c axis on SrTiO₃[100] suggesting that these films are epitaxially grown. The diffusion of metal atoms during the thermal treatment gives rise to the formation of lead silicate on Si[111] substrates. As a result a pyrochlore phase is formed. Lead titanate films on Si/SiO₂/Cr/Pt and Si/Al substrates are polycrystalline and do not exhibit any texture.